2SC4215
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TOSHIBA Transistor Silicon NPN Epitaxial Planar Type
2SC4215
High Frequency Amplifier Applications
FM, RF, MIX, IF Amplifier Applications
• Small reverse transfer capacitance: Cre = 0.55 pF (typ.)
• Low noise figure: NF = 2dB (typ.) (f = 100 MHz)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics Symbol Rating Unit
Collector-base voltage VCBO 40 V
Collector-emitter voltage VCEO 30 V
Emitter-base voltage VEBO 4 V
Collector current IC 20 mA
Base current IB 4 mA
Collector power dissipation PC 100 mW
Junction temperature Tj 125 °C
Storage temperature range Tstg −55 to 125 °C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristics Symbol Test Condition Min Typ. Max Unit
Collector cut-off current ICBO VCB = 40 V, IE = 0 ⎯ ⎯ 0.1 μA
Emitter cut-off current IEBO VEB = 4 V, IC = 0 ⎯ ⎯ 0.5 μA
DC current gain hFE
(Note) VCE = 6 V, IC = 1 mA 40 ⎯ 200
Reverse transfer capacitance Cre VCB = 10 V, f = 1 MHz ⎯ 0.55 ⎯ pF
Transition frequency fT VCE = 6 V, IC = 1 mA 260 550 ⎯ MHz
Collector-base time constant Cc･rbb’ VCE = 6 V, IE = −1 mA, f = 30 MHz ⎯ ⎯ 25 ps
Noise figure NF ⎯ 2 5.0 dB
Power gain Gpe
VCC = 6 V, IE = −1 mA, f = 100 MHz,
Figure 1 17 23 ⎯ dB
Note: hFE classification R: 40 to 80, O: 70 to 140, Y: 100 to 200
Unit: mm
JEDEC ―
JEITA SC-70
TOSHIBA 2-2E1A
Weight: 0.006 g (typ.)
Start of commercial production
1987-06
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L1: 0.8 mmφ silver plated copper wire, 4 T, 10 mm ID, 8 mm length
Marking
Figure 1 NF, Gpe Test Circuit
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