1N4448
www.vishay.com Vishay Semiconductors
Rev. 1.1, 17-Jul-12 1Document Number: 81858
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Small Signal Fast Switching Diodes
MECHANICAL DATA
Case: DO-35
Weight: approx. 125 mg
Cathode band color: black
Packaging codes/options:
TR/10K per 13" reel (52 mm tape), 50K/box
TAP/10K per ammopack (52 mm tape), 50K/box
FEATURES
• Silicon epitaxial planar diodes
• AEC-Q101 qualified
• Material categorization:
For definitions of compliance please see
www.vishay.com/doc?99912
APPLICATIONS
• Extreme fast switches
PARTS TABLE
PART ORDERING CODE TYPE MARKING INTERNAL CONSTRUCTION REMARKS
1N4448 1N4448-TAP or 1N4448-TR V4448 Single diode Tape and reel/ammopack
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Repetitive peak reverse voltage VRRM 100 V
Reverse voltage VR75 V
Peak forward surge current tp = 1 μs IFSM 2A
Repetitive peak forward current IFRM 500 mA
Forward continuous current IF300 mA
Average forward current VR = 0 IF(AV) 150 mA
Power dissipation l = 4 mm, TL = 45 °C Ptot 440 mW
l = 4 mm, TL 25 °C Ptot 500 mW
THERMAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Thermal resistance junction to ambient air l = 4 mm, TL = constant RthJA 350 K/W
Junction temperature Tj175 °C
Storage temperature range Tstg - 65 to + 150 °C
1N4448
www.vishay.com Vishay Semiconductors
Rev. 1.1, 17-Jul-12 2Document Number: 81858
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
Fig. 1 - Forward Voltage vs. Junction Temperature
Fig. 2 - Forward Current vs. Forward Voltage
Fig. 3 - Reverse Current vs. Reverse Voltage
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
Forward voltage IF = 5 mA VF620 720 mV
IF = 100 mA VF1000 mV
Reverse current
VR = 20 V IR25 nA
VR = 20 V, Tj = 150 °C IR50 μA
VR = 75 V IR5μA
Breakdown voltage IR = 100 μA, tp/T = 0.01,
tp = 0.3 ms V(BR) 100 V
Diode capacitance VR = 0, f = 1 MHz, VHF = 50 mV CD4pF
Rectification efficiency VHF = 2 V, f = 100 MHz r45 %
Reverse recovery time
IF = IR = 10 mA, iR = 1 mA trr 8ns
IF = 10 mA, VR = 6 V,
iR = 0.1 x IR, RL = 100 trr 4ns
0
0.2
0.4
0.6
0.8
1.2
V- Forward Voltage (V)
F
T
j
- Junction Temperature (°C)
94 9169
1.0 I
F
= 100 mA
10 mA
1m A
0.1 mA
- 30 30 60 90 1200
0 0.4 0.8 1.2 1.6
0.1
1
10
100
1000
I - Forward Current (mA)
F
V
F - Forward Voltage (V)
2.0
94 9171
Scattering Limit
T = 25 °C
j
1N4448
1
10
100
1000
I
R
- Reverse Current (nA)
V
R
- Reverse Voltage (V)
10 1 100
94 9098
T
j
= 25 °C
Scattering Limit
1N4448
www.vishay.com Vishay Semiconductors
Rev. 1.1, 17-Jul-12 3Document Number: 81858
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
PACKAGE DIMENSIONS in millimeters (inches): DO-35
94 9366
Rev. 6 - Date: 19. December 2011
Document no.: SB-V-3906.04-031(4)
26 min. [1.024] 3.9 max. [0.154] 26 min. [1.024]
Cathode Identication
1.7 [0.067]
1.3 [0.050]
3.1 min. [0.120]
Ø 0.6 max. [0.024]
Ø 0.4 min. [0.015]
Legal Disclaimer Notice
www.vishay.com Vishay
Revision: 12-Mar-12 1Document Number: 91000
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