MMBT2222ALT1 - Comchip Technology Corp.

January, 2006 − Rev. 6 1Publication Order Number:

MMBT2222LT1/D

MMBT2222LT1,

MMBT2222ALT1

MMBT2222ALT1 is a Preferred Device

General Purpose Transistors

NPN Silicon

Features

•Pb−Free Packages are Available

MAXIMUM RATINGS

Rating Symbol Value Unit

Collector−Emitter VoltageMMBT2222LT1

MMBT2222ALT1

VCEO 30

Vdc

Collector−Base Voltage MMBT2222LT1

MMBT2222ALT1

VCBO 60

Vdc

Emitter−Base Voltage MMBT2222LT1

MMBT2222ALT1

VEBO 5.0

6.0

Vdc

Collector Current − Continuous IC600 mAdc

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Total Device Dissipation FR−5 Board

(Note 1) TA = 25°C

Derate above 25°C

PD225

1.8 mW

mW/°C

Thermal Res istance, Junc t i on−to−Ambient RqJA 556 °C/W

Total Device Dissipation Alumina

Substrate (Note 2) TA = 25°C

Derate above 25°C

PD300

2.4 mW

mW/°C

Thermal Res istance, Junc t i on−to−Ambient RqJA 417 °C/W

Junction and Storage Temperature Range TJ, Tstg − 55 to +150 °C

Maximum ratings are those values beyond which device damage can occur.

Maximum ratings applied to the device are individual stress limit values (not

normal operating conditions) and are not valid simultaneously. If these limits are

exceeded, device functional operation is not implied, damage may occur and

reliability may be affected.

1. FR−5 = 1.0  0.75  0.062 in.

2. Alumina = 0.4  0.3  0.024 in. 99.5% alumina.

SOT−23

CASE 318

STYLE 6

Preferred devices are recommended choices for future use

and best overall value.

MARKING DIAGRAM

xxx = 1P or M1B

M = Date Code*

G= Pb−Free Package

COLLECTOR

BASE

EMITTER

http://onsemi.com

(Note: Microdot may be in either location)

*Date Code orientation and/or overbar may

vary depending upon manufacturing location.

See detailed ordering and shipping information in the package

dimensions section on page 5 of this data sheet.

ORDERING INFORMATION

xxx M G

MMBT2222LT1, MMBT2222ALT1

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ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic Symbol Min Max Unit

OFF CHARACTERISTICS

Collector−Emitter Breakdown Voltage (IC = 10 mAdc, IB = 0) MMBT2222

MMBT2222A V(BR)CEO 30

40 −

−Vdc

Collector−Base Breakdown Voltage (IC = 10 mAdc, IE = 0) MMBT2222

MMBT2222A V(BR)CBO 60

75 −

−Vdc

Emitter−Base Breakdown Voltage (IE = 10 mAdc, IC = 0) MMBT2222

MMBT2222A V(BR)EBO 5.0

6.0 −

−Vdc

Collector Cutoff Current (VCE = 60 Vdc, VEB(off) = 3.0 Vdc) MMBT2222A ICEX − 10 nAdc

Collector Cutoff Current (VCB = 50 Vdc, IE = 0) MMBT2222

(VCB = 60 Vdc, IE = 0) MMBT2222A

(VCB = 50 Vdc, IE = 0, TA = 125°C) MMBT2222

(VCB = 60 Vdc, IE = 0, TA = 125°C) MMBT2222A

ICBO −

−

0.01

mAdc

Emitter Cutoff Current (VEB = 3.0 Vdc, IC = 0) MMBT2222A IEBO − 100 nAdc

Base Cutoff Current (VCE = 60 Vdc, VEB(off) = 3.0 Vdc) MMBT2222A IBL − 20 nAdc

ON CHARACTERISTICS

DC Current Gain

(IC = 0.1 mAdc, VCE = 10 Vdc)

(IC = 1.0 mAdc, VCE = 10 Vdc)

(IC = 10 mAdc, VCE = 10 Vdc)

(IC = 10 mAdc, VCE = 10 Vdc, TA = −55°C) MMBT2222A only

(IC = 150 mAdc, VCE = 10 Vdc) (Note 3)

(IC = 150 mAdc, VCE = 1.0 Vdc) (Note 3)

(IC = 500 mAdc, VCE = 10 Vdc) (Note 3) MMBT2222

MMBT2222A

hFE 35

100

−

300

−

Collector−Emitter Saturation Voltage (Note 3)

(IC = 150 mAdc, IB = 15 mAdc) MMBT2222

MMBT2222A

(IC = 500 mAdc, IB = 50 mAdc) MMBT2222

MMBT2222A

VCE(sat) −

−

0.4

0.3

1.6

1.0

Vdc

Base−Emitter Saturation Voltage (Note 3)

(IC = 150 mAdc, IB = 15 mAdc) MMBT2222

MMBT2222A

(IC = 500 mAdc, IB = 50 mAdc) MMBT2222

MMBT2222A

VBE(sat) −

0.6

−

1.3

1.2

2.6

2.0

Vdc

SMALL−SIGNAL CHARACTERISTICS

Current−Gain − Bandwidth Product (Note 4)

(IC = 20 mAdc, VCE = 20 Vdc, f = 100 MHz) MMBT2222

MMBT2222A

fT250

300 −

−

MHz

Output Capacitance

(VCB = 10 Vdc, IE = 0, f = 1.0 MHz) Cobo − 8.0 pF

Input Capacitance

(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) MMBT2222

MMBT2222A

Cibo −

−30

Input Impedance

(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) MMBT2222A

(IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz) MMBT2222A

hie 2.0

0.25 8.0

1.25

Voltage Feedback Ratio

(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) MMBT2222A

(IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz) MMBT2222A

hre −

−8.0

4.0

X 10−4

Small−Signal Current Gain

(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) MMBT2222A

(IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz) MMBT2222A

hfe 50

75 300

375

−

Output Admittance

(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) MMBT2222A

(IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz) MMBT2222A

hoe 5.0

25 35

200

mmhos

MMBT2222LT1, MMBT2222ALT1

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ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic UnitMaxMinSymbol

SMALL−SIGNAL CHARACTERISTICS

Collector Base Time Constant

(IE = 20 mAdc, VCB = 20 Vdc, f = 31.8 MHz) MMBT2222A rb, Cc− 150 ps

Noise Figure

(IC = 100 mAdc, VCE = 10 Vdc, RS = 1.0 kW, f = 1.0 kHz) MMBT2222A NF − 4.0 dB

SWITCHING CHARACTERISTICS (MMBT2222A only)

Delay Time (VCC = 30 Vdc, VBE(off) = −0.5 Vdc,

IC = 150 mAdc, IB1 = 15 mAdc) td− 10 ns

Rise Time tr− 25

Storage Time (VCC = 30 Vdc, IC = 150 mAdc,

IB1 = IB2 = 15 mAdc) ts− 225 ns

Fall Time tf− 60

3. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.

4. fT is defined as the frequency at which |hfe| extrapolates to unity.

Figure 1. Turn−On Time Figure 2. Turn−Off Time

SWITCHING TIME EQUIVALENT TEST CIRCUITS

Scope rise time < 4 ns

*Total shunt capacitance of test jig, connectors, and oscilloscope.

+16 V

−2 V < 2 ns

1.0 to 100 ms,

DUTY CYCLE ≈ 2.0%

1 kW

+30 V

200

CS* < 10 pF

+16 V

−14 V

< 20 ns

1.0 to 100 ms,

DUTY CYCLE ≈ 2.0%

1 k

+30 V

200

CS* < 10 pF

−4 V

1N914

1000

100

200

300

500

700

1.0 k0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 300 500 700

IC, COLLECTOR CURRENT (mA)

Figure 3. DC Current Gain

hFE, DC CURRENT GAIN

TJ = 125°C

25°C

−55°C

VCE = 1.0 V

VCE = 10 V

MMBT2222LT1, MMBT2222ALT1

http://onsemi.com

VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)

1.0

0.8

0.6

0.4

0.2

0.005 0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50

IB, BASE CURRENT (mA)

Figure 4. Collector Saturation Region

TJ = 25°C

IC = 1.0 mA 10 mA 150 mA 500 mA

Figure 5. Turn−On Time

IC, COLLECTOR CURRENT (mA)

100

200

t, TIME (ns)

10 20 70

5.0

100

5.0 7.0 30 50 200

7.0

IC/IB = 10

TJ = 25°C

tr @ VCC = 30 V

td @ VEB(off) = 2.0 V

td @ VEB(off) = 0

3.0

2.0

300 500

500

t, TIME (ns)

5.0

7.0

100

200

300

Figure 6. Turn−Off Time

IC, COLLECTOR CURRENT (mA)

10 20 70 1005.0 7.0 30 50 200 300 500

VCC = 30 V

IC/IB = 10

IB1 = IB2

TJ = 25°C

t′s = ts − 1/8 tf

Figure 7. Frequency Effects

f, FREQUENCY (kHz)

4.0

6.0

8.0

2.0

0.1

Figure 8. Source Resistance Effects

RS, SOURCE RESISTANCE (OHMS)

NF, NOISE FIGURE (dB)

1.0 2.0 5.0 10 20 500.2 0.5

100

NF, NOISE FIGURE (dB)

0.01 0.02 0.05

RS = OPTIMUM

RS = SOURCE

RS = RESISTANCE

IC = 1.0 mA, RS = 150 W

500 mA, RS = 200 W

100 mA, RS = 2.0 kW

50 mA, RS = 4.0 kW

f = 1.0 kHz

IC = 50 mA

100 mA

500 mA

1.0 mA

4.0

6.0

8.0

2.0

50 100 200 500 1.0 k 2.0 k 5.0 k 10 k 20 k 50 k 100 k

MMBT2222LT1, MMBT2222ALT1

http://onsemi.com

Figure 9. Capacitances

REVERSE VOLTAGE (VOLTS)

3.0

5.0

7.0

2.0

0.1

CAPACITANCE (pF)

1.0 2.0 3.0 5.0 7.0 10 20 30 50

0.2 0.3 0.5 0.7

Ccb

Ceb

Figure 10. Current−Gain Bandwidth Product

IC, COLLECTOR CURRENT (mA)

100

200

300

500

fT, CURRENT−GAIN BANDWIDTH PRODUCT (MHz)

1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100

VCE = 20 V

TJ = 25°C

Figure 11. “On” Voltages

IC, COLLECTOR CURRENT (mA)

0.4

0.6

0.8

1.0

0.2

V, VOLTAGE (VOLTS)

TJ = 25°C

VBE(sat) @ IC/IB = 10

VCE(sat) @ IC/IB = 10

VBE(on) @ VCE = 10 V

Figure 12. Temperature Coefficients

IC, COLLECTOR CURRENT (mA)

−0.5

+0.5

COEFFICIENT (mV/ C)

−1.0

−1.5

−2.5

RqVC for VCE(sat)

RqVB for VBE

0.1 1.0 2.0 5.0 10 20 50

0.2 0.5 100 200 500 1.0 k

1.0 V

−2.0

0.1 1.0 2.0 5.0 10 20 500.2 0.5 100 200 500

ORDERING INFORMATION

Device Specific Marking Code Package Shipping†

MMBT2222LT1 M1B SOT−23 3000 / Tape & Reel

MMBT2222LT1G M1B SOT−23

(Pb−Free) 3000 / Tape & Reel

MMBT2222ALT1 1P SOT−23 3000 / Tape & Reel

MMBT2222ALT1G 1P SOT−23

(Pb−Free) 3000 / Tape & Reel

MMBT2222LT3 M1B SOT−23 10,000 / Tape & Reel

MMBT2222LT3G M1B SOT−23

(Pb−Free) 10,000 / Tape & Reel

MMBT2222ALT3 1P SOT−23 10,000 / Tape & Reel

MMBT2222ALT3G 1P SOT−23

(Pb−Free) 10,000 / Tape & Reel

†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging

Specifications Brochure, BRD8011/D.

MMBT2222LT1, MMBT2222ALT1

http://onsemi.com

PACKAGE DIMENSIONS

SOT−23 (TO−236)

CASE 318−08

ISSUE AN

NOTES:

1. DIMENSIONING AND TOLERANCING PER

ANSI Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. MAXIMUM LEAD THICKNESS INCLUDES

LEAD FINISH THICKNESS. MINIMUM LEAD

THICKNESS IS THE MINIMUM THICKNESS OF

BASE MATERIAL.

4. 318−01 THRU −07 AND −09 OBSOLETE,

NEW STANDARD 318−08.

VIEW C

0.25

SEE VIEW C

DIM

AMIN NOM MAX MIN

MILLIMETERS

0.89 1.00 1.11 0.035

INCHES

A1 0.01 0.06 0.10 0.001

b0.37 0.44 0.50 0.015

c0.09 0.13 0.18 0.003

D2.80 2.90 3.04 0.110

E1.20 1.30 1.40 0.047

e1.78 1.90 2.04 0.070

L0.10 0.20 0.30 0.004

0.040 0.044

0.002 0.004

0.018 0.020

0.005 0.007

0.114 0.120

0.051 0.055

0.075 0.081

0.008 0.012

NOM MAX

STYLE 6:

PIN 1. BASE

2. EMITTER

3. COLLECTOR

2.10 2.40 2.64 0.083 0.094 0.104

HE0.35 0.54 0.69 0.014 0.021 0.029

ǒmm

inchesǓ

SCALE 10:1

0.8

0.031

0.9

0.035

0.95

0.037

0.95

0.037

2.0

0.079

SOLDERING FOOTPRINT*

*For additional information on our Pb−Free strategy and soldering

details, please download the ON Semiconductor Soldering and

Mounting Techniques Reference Manual, SOLDERRM/D.

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MMBT2222LT1/D

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