5SGA20H4502 - ABB Semiconductors

ABB Semiconductors AG reserves the right to change specifications without notice.

VDRM = 4500 V

ITGQM = 2000 A

ITSM =13kA

VT0 =1.80V

rT=0.85

mΩ

VDClin = 2200 V

Gate turn-off Thyristor

5SGA 20H4502

Doc. No. 5SYA 1210-01 Aug. 2000

• Patented free-floating silicon technology

• Low on-state and switching losses

• Annular gate electrode

• Industry standard housing

• Cosmic radiation withstand rating

Blocking

VDRM Repetitive peak off- stat e voltage 4500 V VGR ≥ 2V

VRRM Repetitive peak revers e voltage 17 V

IDRM Repetitive peak off-state current ≤100 mA VD = VDRM VGR ≥ 2V

IRRM Repetitive peak reverse current ≤50 mA VR = VRRM RGK = ∞

VDClink Permanent DC voltage for 100

FIT fa ilu re ra te 2200 V -40 ≤ Tj ≤ 125 °C. Ambient cosmic

radiation at sea level in open air.

Mechanical data (see Fig. 19) min. 17 kN

FmMounting force max. 24 kN

AAcceleration:

Device unclamped

Device clamped 50

200 m/s2

m/s2

MWeight 0.8 kg

DSSurface creepage distance ≥22 mm

DaAir strike distance ≥13 mm

5SGA 20H4502

ABB Semiconductors AG reserves the right to change specifications without notice.

Doc. No. 5SYA 1210-01 Aug. 2000 page 2 of 9

GTO Data

On-state

ITAVM Max. average on-state current 710 A Half sine wave, TC = 85 °C

ITRMS Max. RMS on-state current 1115 A

ITSM 13 kA tP=10msT

j = 125°CMax. peak non-repetitive

surge current 24 kA tP= 1 ms Afte r surge:

I2t Limiting load int egral 0.85⋅106A2st

P=10msV

D = VR = 0V

0.29⋅106A2st

P=1ms

VTOn-state voltage 3.50 V IT= 2000 A

VT0 Threshold voltage 1.80 V IT= 400 - 3000 A Tj = 125 °C

rTSlope resistance 0.85 mΩ

IHHolding current 50 A Tj=25 °C

Gate

VGT Gate trigger voltage 1.0 V VD= 24 V Tj = 25 °C

IGT Gate trigger current 2.5 A RA=0.1 Ω

VGRM Repetit ive peak reverse voltag e 17 V

IGRM Repetitive peak reverse current 50 mA VGR =V

GRM

Turn-on sw itching

di/dtcrit Max. rate of rise of on-state 400 A/µ s f = 200Hz I T = 2000 A, Tj = 125 °C

curren t 600 A/µs f = 1Hz IGM = 30 A, diG/dt = 20 A/µs

tdDelay time 2.0 µs VD=0.5V

DRM Tj= 125 °C

trRise time 6.0 µs IT= 2000 A di/dt = 200 A/µs

ton(min) Min. on-t ime 80 µs IGM =30Adi

G/dt = 20 A/µs

Eon Turn-on energy per pulse 2.50 Ws CS=4µFR

S=5

Ω

Turn-off switching 2000 A VDM =V

DRM diGQ/dt = 30 A/µsITGQM Max controllable turn-off

current CS=4 µF L

S≤0.3 µH

tsStorage time 22.0 µs VD=½VDRM VDM =V

DRM

tfFall time 3.0 µ s Tj=125°Cdi

GQ/dt = 30 A/µs

toff(min) Min. off-time 80 µs ITGQ =I

TGQM

Eoff Turn-off energy per pulse 7.5 W s CS=4µFR

S=5

Ω

IGQM Peak turn-off gate current 725 A LS≤0.3 µH

5SGA 20H4502

ABB Semiconductors AG reserves the right to change specifications without notice.

Doc. No. 5SYA 1210-01 Aug. 2000 page 3 of 9

Thermal

TjStorage and operating -40...125°C

junction temperature range

RthJC Thermal resistance 30 K/kW Anode side cooled

junction to case 39 K/kW Cathode side cooled

17 K/kW Double side cooled

RthCH Thermal resistance case to 10 K/kW Sing le side cooled

heat sink 5 K/kW Double side cooled

i1234

RI (K/kW) 11.7 4.7 0. 64 0.0001

Anal ytical f unction for transient thermal

impedance:

)e-(1R = (t)Z 4

/t-

thJC i

∑

τi (s) 0.9 0.26 0.002 0.001

Fig. 1 Transient thermal impedance, junction to case.

5SGA 20H4502

ABB Semiconductors AG reserves the right to change specifications without notice.

Doc. No. 5SYA 1210-01 Aug. 2000 page 4 of 9

Fig. 2 On-state characteristics Fig. 3 Average on-state power dissipation vs.

average on-state current.

Fig. 4 Surge current and fusing integral vs. pulse

width

5SGA 20H4502

ABB Semiconductors AG reserves the right to change specifications without notice.

Doc. No. 5SYA 1210-01 Aug. 2000 page 5 of 9

Fig. 5 Forward blocking voltage vs. gate-cathode

resistance. Fig. 6 Static dv/dt capability: Forward blocking

voltage vs. neg. gate voltage or gate

cathode resistance.

Fig. 7 Forward e ga te cu rren t v s . fo rard gate

voltage. Fig. 8 Gate trigger current vs. junction

temperature

5SGA 20H4502

ABB Semiconductors AG reserves the right to change specifications without notice.

Doc. No. 5SYA 1210-01 Aug. 2000 page 6 of 9

Fig. 9 Turn-on energy per pulse vs. on-state

current and turn-on voltage. Fig. 10 Turn-on energy per pulse vs. on.-state

current and current rise rate

Common Test conditions for figures 9, 10 and 11:

diG/dt = 20 A/µs

CS = 4 µF

RS = 5 Ω

Tj = 125 °C

Definition of Turn-on energy:

)0.1 I 0, (t G

GMT

Don IdtIVE ⋅==⋅= ∫

Common Test conditions for figures 12, 13 and 15:

Definition of Turn-off energy:

)0.9 I 0, t ( T

TGQT

Doff IdtIVE ⋅==⋅= ∫

Fig. 11 Turn-on energy per pulse vs. on-state

current and turn-on voltage.

5SGA 20H4502

ABB Semiconductors AG reserves the right to change specifications without notice.

Doc. No. 5SYA 1210-01 Aug. 2000 page 7 of 9

Fig. 12 Turn-off energy per pulse vs. turn-off current

and peak turn-off voltage. Extracted gate

charge vs. turn-off current.

Fig. 13 Turn-off energy per pulse vs. turn-off

current and snubber capacitance.

Fig. 14 Requir ed snubber capacitor vs. max

allowable turn-off current. Fig. 15 Turn-off energy per pulse, storage time

and peak turn-off gate current vs. junction

temperature

Fig. 16 Storage time and peak turn-off gate current

vs. neg. gate current rise rate. Fig. 17 Storage time and peak turn-off gate

current vs. turn-off current

5SGA 20H4502

ABB Semiconductors AG reserves the right to change specifications without notice.

Doc. No. 5SYA 1210-01 Aug. 2000 page 8 of 9

Fig. 18 General current and voltage waveforms with GTO- specif ic symbols

Fig. 19 Outline drawing. All dimensions are in

millimeter s and represent nominal values

unless stated otherwise.

5SGA 20H4502

ABB Semiconductors AG reserves the right to change specifications without notice.

ABB Semiconductors AG Doc. No. 5SYA 1210-01 Aug. 2000

Fabri kstra sse 2

CH-5600 Lenzburg, Switzerland

Tel: +41 (0)62 888 641 9

Fax: +41 (0)62 888 630 6

E-mail info@ch.abb.com

Internet www.abbsem.com

Reverse avalanche capability

In operation with an antiparallel freewheeling diode, the GTO reverse voltag e VR may exceed the rate

value VRRM due to stray inductance and diode turn-on voltage spike at high di/dt. The GTO is then

driven into reverse avalanche. This condition is not dangerous for the GTO provided avalanche time

and current are below 10 µs and 1000 A respectively. However, gate voltage must remain negative

during this time. Recommendation : VGR = 10… 15 V.