Document DS 13163 Rev B, ECN 9792
Revision Date: 4/20/2011
Surface Mount PIN Diode
SP3T Switches
MSW3100-310 & MSW3101-310
Series Datasheet
Description
The MSW3100-310 and MSW3101-310 Surface Mount Silicon PIN Diode SP3T Switches are manufactured
using Aeroflex/Metelics proven hybrid manufacturing process incorporating High Voltage PIN Diodes and
passive devices integrated within a ceramic substrate. This low profile, compact, surface mount
component, (8 mm L x 8 mm W x 2.5 mm H) offers superior low and high signal performance to
comparable MMIC devices in QFN packages. The SP3T switches are designed in a symmetrical topology
to optimize Insertion Loss and Isolation performance.
Using PIN Diodes with lower thermal resistance ( < 8 ºC/W ), RF C.W. incident power levels of +50 dBm
and RF peak incident power levels of +57 dBm are very achievable in higher power cold and hot
switching applications @ +85 º C. The lower PIN Diode series resistance ( < 1.0 Ω), coupled with the
longer minority carrier lifetime, ( > 2 μS ), provides better IIP3 distortion values > +65 dBm .
Applications
These MSW3100-310 and MSW3101-310 SP3T Switches are designed to be used in higher average and
peak power switch applications, operating from 20 MHz to 4000 MHz, requiring high volume, surface
mount, solder re-flow manufacturing. These products are durable, reliable, and capable of meeting all
military, commercial, and industrial environments. The devices are fully RoHS compliant.
Environmental Capabilities
The MSW3100-310 and MSW3101-310 SP3T Switches are capable of meeting the environmental
requirements of MIL-STD-202 and MIL-STD-750.
ESDand Moisture Sensitivity Level Rating
PIN Diode Switches are susceptible to ESD conditions as with all semiconductors. The ESD rating for this
device is Class 1C, HBM. The moisture sensitivity level rating for this device is MSL 2.
Features
Surface Mount SP3T Switch in Compact Outline:
8mm L x 8mm W x 2.5 mm H
Higher Average Power Handling than Plastic ( 100 W C.W.)
Higher Voltage > 1000 Volts for Higher RF Peak Power ( 500 W )
Lower Insertion Loss ( 0.45 dB ) & Higher IIP3 ( 65 dBm )
Operates From + Voltage Only (+5V, & +28V to + 125V)
RoHS Compliant
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Document DS 13163 Rev B, ECN 9792
Revision Date: 4/20/2011
Parameter Symbol Units Test Conditions Minimum Typical Maximum
Value Value Value
Frequency F MHz 20 50 – 1000 1500
J0-J1, J0-J2 or J0-J3 IL dB 0 V @ 100 mA (ON) | -0.4 | | -0.6 |
Insertion Loss (Note 3) 28 V @ 50 mA (OFF)
J0-J1, J0-J2 or J0-J3 RL dB 0 V @ 100 mA (ON) | -18 | | -20 |
Return Loss (Note 3) 28 V @ 50 mA (OFF)
J0-J1, J0-J2 or J0-J3 Isol dB 0 V @ 100 mA (ON) | -50 | | -53 |
Isolation (Note 3) 28 V @ 50 mA (OFF)
C.W. Incident Power Pinc (CW) dBm 0 V @ 100 mA (ON) +50
(Note 3) 28 V @ 50 mA (OFF)
1.5:1 Source & Load VSWR
Peak. Incident Power Pinc (Pk) dBm 0 V @ 100 mA (ON) +57 @
(Note 3) 28 V @ 50 mA (OFF) 10 μS Pulse,
1.5:1 Source & Load VSWR 1 % Duty
Switching Speed Ts μS (10% -90% RF Voltage) 2 3
TTL Rep rate = 100 kHz
Input 3rd Order IIP3 dBm F1 = 500 MHz 60 65
Intercept Point F2 = 510 MHz
P1 = P2 = +40 dBm
0 V @ 100 mA (ON)
28 V @ 50 mA (OFF)
MSW3100-310 Electrical Specifications
@ Zo = 50 Ω, TA = +25 ºC ( Unless Otherwise Defined )
SP3T PIN Diode Switches
Parameter Symbol Units Test Conditions Minimum Typical Maximum
Value Value Value
Frequency F MHz 200 400 – 4000 4500
J0-J1, J0-J2 or J0-J3 IL dB 0 V @ 100 mA (ON) | -0.6 | | -0.8 |
Insertion Loss (Note 3) 28 V @ 50 mA (OFF)
J0-J1, J0-J2 or J0-J3 RL dB 0 V @ 100 mA (ON) | -14 | | -15 |
Return Loss (Note 3) 28 V @ 50 mA (OFF)
J0-J1, J0-J2 or J0-J3 Isol dB 0 V @ 100 mA (ON) | -32 | | -34 |
Isolation (Note 3) 28 V @ 25 mA (OFF)
C.W. Incident Power Pinc (CW) dBm 0 V @ 100 mA (ON) +50
(Note 3) 28 V @ 50 mA (OFF)
1.5:1 Source & Load VSWR
Peak. Incident Power Pinc (Pk) dBm 0 V @ 100 mA (ON) +57 @
(Note 3) 28 V @ 50 mA (OFF) 10 μS Pulse,
1.5:1 Source & Load VSWR 1 % Duty
Switching Speed Ts μS (10% -90% RF Voltage) 1.5 2
TTL Rep rate = 100 kHz
Input 3rd Order IIP3 dBm F1 = 2000 MHz 60 65
Intercept Point F2 = 2010 MHz
P1 = P2 = +40 dBm
0 V @ 100 mA (ON)
28 V @ 50 mA (OFF)
MSW3101-310 Electrical Specifications
@ Zo = 50 Ω, TA = + 25 ºC ( Unless Otherwise Defined )
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Document DS 13163 Rev B, ECN 9792
Revision Date: 4/20/2011
SP3T PIN Diode Switches
MSW3100-310 and MSW3101-310 SP3T Schematic
J0
B3
J3
J1
B1
J2
RF Bypass Caps
B2
Electrical Specification Notes:
1. Switching Speed (50 % TTL – 10/90 % RF Voltage) is a Function of the PIN Diode Driver Performance.
A RC “ Current Spiking Network” is used on the Driver output to provide a Ic = C dV/dt transient current
to move Stored charge through the PIN Diode, typical values are: R = 50 – 220 Ωand C = 470 – 1,000 pF.
2. Aeroflex / Metelics MPD3T28125-701 is the recommended Driver to interface with the MSW3100-310 and
MSW3101-310 SP3T Switches and its data sheet may be found at http://www.aeroflex.com/metelics.
3. PIN Diode D.C. Reverse Voltage to maintain High Resistance in the OFF PIN diode is determined by RF
Frequency, Incident Power, and VSWR. The Minimum D.C. Reverse Voltage values are provided on page 5
of this datasheet. +28V values shown in these specification tables are utilized for small signal testing ~0 dBm.
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4
Document DS 13163 Rev B, ECN 9792
Revision Date: 4/20/2011
SP3T PIN Diode Switches
5
TTL PIN Diode Driver ( 6 X )
J0
B3
J3
J1
B1
J2
B2
39 Ω
+5V
+28
V
+2
8
V
+28
V
+28
V
+28
V
+2
8
V
+1V
1.1 KΩ
1.1 KΩ
1.1 KΩ
SP3T Switch Schematic with RF Bias Network and Truth Table
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SP3T PIN Diode Switches
Document DS 13163 Rev B, ECN 9792
Revision Date: 4/20/2011
RF Bias Network Values
Part Number F ( MHz ) DC Blocking Inductors RF Bypass
Capacitors Capacitors
MSW3100-310 50 – 1,000 0.1 μF4.7 μH0.1 μF
MSW3101-310 400 – 4,000 27 pF 82 nH 270 pF
D.C. Bias to RF Truth Table
RF State J1 Bias J2 Bias J3Bias B1 Bias B2 Bias B3 Bias
J1-J0 Low Loss & 0 V @ +28 V @ +28 V @ +28 V @ +0 V @ +0 V @
J2-J0 Isolation & 100 mA 25 mA 25 mA 0 mA 25 mA 25 mA
J3-J0 Isolation
J2-J0 Low Loss & +28 V @ +0 V @ +28 V @ +0 V @ +28 V @ +0 V @
J1-J0 Isolation & 25 mA 100 mA 25 mA 25 mA 0 mA 25 mA
J3-J0 Isolation
J3-J0 Low Loss & +28 V @ +28 V @ +0 V @ +0 V @ +0 V @ +28 V @
J1-J0 Isolation & 25 mA 25 mA 100 mA 25 mA 25 mA 0 mA
J2-J0 Isolation
Minimum Reverse Bias Voltage @ J1, J2, J3, B1, B2,B3 vs. Frequency for 100 W C.W.
Power with 1.5:1 VSWR
Part Number F ( MHz ) F ( MHz ) F ( MHz ) F ( MHz ) F ( MHz ) F ( MHz )
& & & & & &
| - Vdc | | - Vdc | | - Vdc | | - Vdc | | - Vdc | - Vdc |
MSW3100-310 20 MHz 100 MHz 200 MHz 400 MHz 1,000 MHz 4,000 MHz
| -120 V | | -110 V | | -85 V | | -55 V | | -28 V | NA
MSW3101-310 20 MHz 100 MHz 200 MHz 400 MHz 1,000 MHz 4,000 MHz
NA NA | -110 V | | -85 V | | -55 V | | -28 V |
Notes:
1. NA ” denotes the Switch is not defined for that Frequency Band.
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Document DS 13163 Rev B, ECN 9792
Revision Date: 4/20/2011
SP3T PIN Diode Switches
Absolute Maximum Ratings @ TA= + 25 ºC ( Unless Otherwise Defined )
Parameter Absolute Maximum Value
Forward Diode Current @ J0, J1, J2 or J3 250 mA
Reverse Voltage @ J0, J1, J2 or J3 | -125 | V
Reverse Voltage @ B1, B2 or B3 | -125 | V
Forward Diode Voltage 1.2 V @ 250 mA
Operating Temperature -65 ºC to +125 ºC
Storage Temperature -65 ºC to +150 ºC
Junction Temperature +175 ºC
Assembly Temperature +260 ºC for 10 Seconds
C.W. Incident Power Handling +50 dBm @ +85 ºC Case Temperature
Source & Load VSWR = 1.5 :1
( Cold Switching & Hot Switching )
Notes 1, 2
Peak Incident Power Handling +57 @ 10 μS Pulse, 1 % Duty
Source & Load VSWR = 1.5 :1 @ +85 ºC Case Temperature
( Cold Switching & Hot Switching )
Notes 1, 2
Total Dissipated RF & D.C. Power 5.0 W @ +85 ºC Case Temperature
( Cold Switching )
Notes 1, 2
Notes:
1. For Hot Switching, PIN Diode Driver must Transition from Forward Bias to Reverse Bias and Reverse
Bias to Forward Bias within 100 ηS with a parallel RC spiking network at the Driver Output.
2. Backside RF and D.C. Grounding Area of Device must be Completely Solder Attached to RF Circuit
Board Vias for Proper Electrical and Thermal RF Circuit Grounding.
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Document DS 13163 Rev B, ECN 9792
Revision Date: 4/20/2011
SP3T PIN Diode Switches
MSW3100-310 Small Signal Parametric Performance
MSW3100-310 Insertion Loss vs. Frequency
-1.00
-0.90
-0.80
-0.70
-0.60
-0.50
-0.40
-0.30
-0.20
-0.10
0.00
100 150 200 250 300 350 400 450 500 550 600 650 700 750
Frequency (MHz)
Insertion Loss (dB)
J0-J1
J0-J2
J0-J3
Notes: Data is only shown from 100 - 750 MHz due to bandwidth of RF Bias network.
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Document DS 13163 Rev B, ECN 9792
Revision Date: 4/20/2011
SP3T PIN Diode Switches
MSW3101-310 Small Signal Parametric Performance
MSW3100-310 Isolation vs. Frequency
-75
-65
-55
-45
-35
-25
-15
-5
5
057885524362001
Frequency (MHz)
Isolation (dB)
J0-J1
J0-J2
J0-J3
MSW3101-310 Insertion Loss vs. Frequency
-1.00
-0.90
-0.80
-0.70
-0.60
-0.50
-0.40
-0.30
-0.20
-0.10
0.00
400 760 1120 1480 1840 2200 2560 2920 3280 3640 4000
Frequency (MHz)
Insertion Loss (dB)
J0-J1
J0-J2
J0-J3
Notes: Data is only shown from 100 - 750 MHz due to bandwidth of RF Bias network.
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Document DS 13163 Rev B, ECN 9792
Revision Date: 4/20/2011
SP3T PIN Diode Switches
MSW3101-310 Return Loss vs. Frequency
-45
-40
-35
-30
-25
-20
-15
-10
-5
0
400 760 1120 1480 1840 2200 2560 2920 3280 3640 4000
Frequency (MHz)
Return Loss (dB)
J0-J1
J0-J2
J0-J3
MSW3101-310 Isolation vs. Frequency
-70
-65
-60
-55
-50
-45
-40
-35
-30
-25
-20
-15
-10
-5
0
400 760 1120 1480 1840 2200 2560 2920 3280 3640 4000
Frequency (MHz)
Isolation (dB)
J0-J1
J0-J2
J0-J3
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Document DS 13163 Rev B, ECN 9792
Revision Date: 4/20/2011
SP3T PIN Diode Switches
Profile Feature Sn-Pb Eutectic Assembly Pb-Free Assembly
Average ramp-up rate 3°C/second maximum 3°C/second maximum
(TLto TP)
Preheat
- Temperature Minimum (TSMIN)100°C 150°C
- Temperature Maximum (TSMAX)150°C 200°C
- Time (Minimum to maximum) (ts)60-120 seconds 60-180 seconds
TSMAX to TL
- Ramp-up Rate 3°C/second maximum
Time Maintained above:
- Temperature (TL)183°C 217°C
- Time (tL) 60-150 seconds 60-150 seconds
Peak Temperature (TP)225 +0 / -5°C 245 +0/-5°C
Time within 5°C of actual
Peak Temperature (TP) 10-30 seconds 20-40 seconds
Ramp-down Rate 6°C/second maximum 6°C/second maximum
Time 25°C to Peak Temperature 6minutes maximum 8minutes maximum
Assembly Instructions
The MSW3100-310 and MSW3101-310 Switches are capable of being placed onto circuit boards with pick and place
manufacturing equipment from tube or tape-reel dispensing. The devices are attached to the circuit board using
conventional solder re-flow or wave soldering procedures with RoHS type or Sn 63 / Pb 37 type solders per Table I
and Graph I Time-Temperature recommended profile.
Table 1: Time-Temperature Profile for Sn 60/Pb40 or RoHS Type Solders
Graph1: Solder Re-Flow Time-Temperature Function
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Document DS 13163 Rev B, ECN 9792
Revision Date: 4/20/2011
SP3T PIN Diode Switches
MSW3100-310 and MSW3101-310 SP3T Switch Outline ( Case Style 310 )
RF Circuit Solderable Footprint for Case Style 310 ( CS310 )
Note: Thatched Metal Area on Circuit Side of Device is RF, D.C. and thermal Ground.
Thatched Area is RF, D.C., and Thermal Ground. Vias should be solid copper fill and gold plated for optimum heat
transfer from backside of switch module through Circuit Vias to metal thermal ground.
Aeroflex / Metelics, Inc.
54 Grenier Field Road, Londonderry, NH 03053
Tel: (603) 641-3800
Sales: (888) 641-SEMI (7364)
Fax: (603)-641-3500
975 Stewart Drive, Sunnyvale, CA 94085
Tel: (408) 737-8181
Fax: (408) 733-7645
www.aeroflex.com/metelics metelics-sales@aeroflex.com
Document DS 13163 Rev B, ECN 9792
Revision Date: 4/20/2011
Our passion for performance is defined by three
attributes represented by these three icons:
solution-minded, performance-driven and customer-focused.
Aeroflex / Metelics, Inc. reserves the right to make changes to any products
and services herein at any time without notice. Consult Aeroflex or an author-
ized sales representative to verify that the information in this data sheet is cur-
rent before using this product. Aeroflex does not assume any responsibility or
liability arising out of the application or use of any product or service
described herein, except as expressly agreed to in writing by Aeroflex; nor
does the purchase, lease, or use of a product or service from Aeroflex con-
vey a license under any patent rights, copyrights, trademark rights, or any
other of the intellectual rights of Aeroflex or of third parties.
Copyright 2009-2011 Aeroflex / Metelics. All rights reserved.
ISO 9001:2008 certified companies
Part Number Packaging
MSW3100-320-T Tube
MSW3100-320-R Tape-Reel
(Quantities of 250 or 500)
MSW3100-320-W Waffle Pack
MSW3101-320-T Tube
MSW3101-320-R Tape-Reel
(Quantities of 250 or 500)
MSW3101-320-W Waffle Pack
MSW3100-320-E RF Evaluation Board
MSW3101-320-E RF Evaluation Board
* RF Evaluation boards are rated at + 45 dBm C.W. or Peak Incident
Power due to the RF power rating values of the Passive L, C Bias
Elements.
Part Number Ordering Information: