© 2008 IXYS CORPORATION,All rights reserved
Symbol Test Conditions Maximum Ratings
VDSS TJ= 25°C to 150°C 1200 V
VDGR TJ= 25°C to 150°C, RGS = 1MΩ1200 V
VGSS Continuous ± 30 V
VGSM Transient ± 40 V
ID25 TC= 25°C20A
IDM TC= 25°C, pulse width limited by TJM 50 A
IATC= 25°C10A
EAS TC= 25°C1J
dV/dt IS≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C 15 V/ns
PDTC= 25°C 780 W
TJ-55 ... +150 °C
TJM 150 °C
Tstg -55 ... +150 °C
TL1.6mm (0.062 in.) from case for 10s 300 °C
TSOLD Plastic body for 10s 260 °C
MdMounting torque (IXFK) 1.13/10 Nm/lb.in.
FCMounting force (IXFX) 20..120 /4.5..27 N/lb.
Weight TO-264 10 g
PLUS247 6 g
Symbol Test Conditions Characteristic Values
(TJ = 25°C unless otherwise specified) Min. Typ. Max.
BVDSS VGS = 0V, ID = 1mA 1200 V
VGS(th) VDS = VGS, ID = 1mA 3.5 6.5 V
IGSS VGS = ± 30V, VDS = 0V ± 200 nA
IDSS VDS = VDSS 25 μA
VGS = 0V TJ = 125°C 5 mA
RDS(on) VGS = 10V, ID = 0.5 • ID25, Note 1 570 mΩ
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
Features
zFast intrinsic diode
zInternational standard packages
zUnclamped Inductive Switching (UIS)
rated
zLow package inductance
- easy to drive and to protect
Advantages
zEasy to mount
zSpace savings
zHigh power density
IXFK20N120P
IXFX20N120P
VDSS = 1200V
ID25 = 20A
RDS(on) ≤≤
≤≤
≤ 570mΩΩ
ΩΩ
Ω
trr ≤≤
≤≤
≤ 300ns
DS99854B(04/08)
PolarTM Power MOSFET
HiPerFETTM
Applications:
zHigh Voltage Switched-mode and
resonant-mode power supplies
zHigh Voltage Pulse Power Applications
zHigh Voltage Discharge circuits in
Lasers Pulsers, Spark Igniters, RF
Generators
zHigh Voltage DC-DC converters
zHigh Voltage DC-AC inverters
G = Gate D = Drain
S = Source TAB = Drain
PLUS247 (IXFX)
TO-264 (IXFK)
S
G
D(TAB)
(TAB)
IXYS reserves the right to change limits, test conditions, and dimensions.
IXFK20N120P
IXFX20N120P
Symbol Test Conditions Characteristic Values
(TJ = 25°C unless otherwise specified) Min. Typ. Max.
gfs VDS= 20V, ID = 0.5 • ID25, Note 1 10 16 S
Ciss 11.1 nF
Coss VGS = 0V, VDS = 25V, f = 1MHz 600 pF
Crss 60 pF
RGi Gate input resistance 1.60 Ω
td(on) Resistive Switching Times 49 ns
trVGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 45 ns
td(off) RG = 1Ω (External) 72 ns
tf70 ns
Qg(on) 193 nC
Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 74 nC
Qgd 85 nC
RthJC 0.16 °C/W
RthCS 0.15 °C/W
Source-Drain Diode Characteristic Values
TJ = 25°C unless otherwise specified)
Symbol Test Conditions Min. Typ. Max.
ISVGS = 0V 20 A
ISM Repetitive, pulse width limited by TJM 80 A
VSD IF = IS, VGS = 0V, Note 1 1.5 V
trr 300 ns
QRM 0.84 μC
IRM 9 A
Note 1: Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%.
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2
by one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537
TO-264 (IXFK) Outline
Millimeter Inches
Min. Max. Min. Max.
A 4.82 5.13 .190 .202
A1 2.54 2.89 .100 .114
A2 2.00 2.10 .079 .083
b 1.12 1.42 .044 .056
b1 2.39 2.69 .094 .106
b2 2.90 3.09 .114 .122
c 0.53 0.83 .021 .033
D 25.91 26.16 1.020 1.030
E 19.81 19.96 .780 .786
e 5.46 BSC .215 BSC
J 0.00 0.25 .000 .010
K 0.00 0.25 .000 .010
L 20.32 20.83 .800 .820
L1 2.29 2.59 .090 .102
P 3.17 3.66 .125 .144
Q 6.07 6.27 .239 .247
Q1 8.38 8.69 .330 .342
R 3.81 4.32 .150 .170
R1 1.78 2.29 .070 .090
S 6.04 6.30 .238 .248
T 1.57 1.83 .062 .072
Dim.
Terminals: 1 - Gate
2 - Drain (Collector)
3 - Source (Emitter)
4 - Drain (Collector)
PLUS247TM (IXFX) Outline
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.83 5.21 .190 .205
A12.29 2.54 .090 .100
A21.91 2.16 .075 .085
b 1.14 1.40 .045 .055
b11.91 2.13 .075 .084
b22.92 3.12 .115 .123
C 0.61 0.80 .024 .031
D 20.80 21.34 .819 .840
E 15.75 16.13 .620 .635
e 5.45 BSC .215 BSC
L 19.81 20.32 .780 .800
L1 3.81 4.32 .150 .170
Q 5.59 6.20 .220 0.244
R 4.32 4.83 .170 .190
IF = 10A, -di/dt = 100A/μs
VR = 100V, VGS = 0V
© 2008 IXYS CORPORATION,All rights reserved
IXFK20N120P
IXFX20N120P
Fig. 1. Ou tpu t C h ar acteri sti cs
@ 25ºC
0
2
4
6
8
10
12
14
16
18
20
024681012
V
DS
- Volts
I
D
- A m p e res
V
GS
= 10V
9V
7
V
8
V
Fig. 2. Extended Output Characteristics
@ 25º C
0
5
10
15
20
25
30
35
40
0 5 10 15 20 25 30
V
DS
- Volts
I
D
- A mp ere s
V
GS
= 10V
9V
7
V
8
V
Fi g . 3. Outp u t C h ar acter i sti cs
@ 125ºC
0
2
4
6
8
10
12
14
16
18
20
0 2 4 6 8 101214161820222426
V
DS
- Volts
I
D
- A mp ere s
V
GS
= 10V
8V
7V
6V
Fig. 4. R
DS(on)
Normalized to I
D
= 10A Value
vs. Junction Temperature
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
2.6
-50 -25 0 25 50 75 100 125 150
T
J
- Degrees Centigrade
R
DS(on)
- N o rm a lize d
V
GS
= 10V
I
D
= 20A
I
D
= 10A
Fig. 5. R
DS(on)
Normalized to I
D
= 10A Val u e
vs. Drain Current
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
0 5 10 15 20 25 30 35 40
I
D
- Ampe re s
R
DS(on)
- N orma lize d
V
GS
= 10V T
J
= 125ºC
T
J
= 25ºC
Fig. 6. Maximum Drain Current vs.
Case Temp er at u r e
0
2
4
6
8
10
12
14
16
18
20
22
-50 -25 0 25 50 75 100 125 150
T
C
- Degrees Centigrade
I
D
- A mpe res
IXYS reserves the right to change limits, test conditions, and dimensions.
IXFK20N120P
IXFX20N120P
IXYS REF: F_20N120P(86) 04-03-08-B
Fig. 7. Input Adm ittance
0
5
10
15
20
25
30
35
5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0
VGS - V olts
ID - A mpe re s
T
J
= 125ºC
25ºC
- 40ºC
Fi g . 8. Tran sco nd u ctan ce
0
5
10
15
20
25
30
35
0 5 10 15 20 25 30 35
ID - A mpe res
g
f s
- Siem ens
T
J
= - 40ºC
125ºC
25ºC
Fig. 9. Forward Voltage Drop of
Intrinsic Diode
0
10
20
30
40
50
60
0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3
VSD - V olts
IS - A mpe re s
T
J
= 125ºC
T
J
= 25ºC
Fig. 10. Gate Charge
0
2
4
6
8
10
12
14
16
0 40 80 120 160 200 240 280
QG - Nan oCoulomb s
VGS - V o lts
V
DS
= 600V
I
D
= 10A
I
G
= 10mA
Fig. 11. Capacitance
10
100
1,000
10,000
100,000
0 5 10 15 20 25 30 35 40
VDS - Volts
Capacitance - PicoFarads
f
= 1 MHz
Ciss
Crss
Coss
Fi g . 12. Maxi mu m Transi en t The r mal
Impedance
0.001
0.010
0.100
1.000
0.00001 0.0001 0.001 0.01 0.1 1 10
Pulse Width - Seconds
Z(th)JC - ºC / W
