2N5401 PNP SILICON TRANSISTOR
UNISONIC TECHNOLOGIES CO., LTD 2 of 4
www.unisonic.com.tw QW-R201-001,E
ABSOLUTE MAXIMUM RATING (Ta=25°C , unless otherwise specified)
PARAMETER SYMBOL RATINGS UNIT
Collector-Base Voltage VCBO -160 V
Collector-Emitter Voltage VCEO -150 V
Emitter-Base Voltage VEBO -5 V
Collector Current IC -600 mA
Collector Dissipation TO-92 PC 625 mW
SOT-89 500 mW
Junction Temperature TJ +150 ℃
Storage Temperature TSTG -55 ~ +150 ℃
Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT
Collector-Base Breakdown Voltage BVCBO I
C = -100μA, IE = 0 -160 V
Collector-Emitter Breakdown Voltage BVCEO I
C = -1mA, IB = 0 -150 V
Emitter-Base Breakdown Voltage BVEBO IE = -10μA, IC = 0 -5 V
Collector Cut-off Current ICBO V
CB = -120V, IE= 0 -50 nA
Emitter Cut-off Current IEBO V
EB = -3V, IC = 0 -50 nA
DC Current Gain (Note)
hFE1
hFE2
hFE3
VCE = -5V, IC = -1mA
VCE = -5V, IC = -10mA
VCE = -5V, IC = -50mA
80
80
80
400
Collector-Emitter Saturation Voltage VCE(SAT) IC = -10mA, IB = -1mA
IC = -50mA, IB= -5mA
-0.2
-0.5 V
Base-Emitter Saturation Voltage VBE(SAT) IC = -10mA, IB = -1mA
IC = -50mA, IB= -5mA
-1
-1 V
Current Gain Bandwidth Product fT VCE = -10V, IC = -10mA
f = 100MHz 100 400 MHz
Output Capacitance COB V
CB = -10V, IE= 0, f = 1MHz 6.0 pF
Noise Figure NF IC = -0.25mA, VCE = -5V
RS = 1kΩ, f = 10Hz ~ 15.7kHz 8 dB
Note: Pulse test: PW<300μs, Duty Cycle<2%
CLASSIFICATION OF hFE
RANK A B C
RANGE 80-170 150-240 200-400