TECHNICAL DATA NPN POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/537 Devices 2N6674 Qualified Level 2N6675 2N6689 JAN JANTX JANTXV 2N6690 MAXIMUM RATINGS Ratings Symbol Collector-Emitter Voltage Collector-Base Voltage Collector-Base Voltage Emitter-Base Voltage Base Current Collector Current VCEO VCBO VCEX VEBO IB IC @ T A = +250C @ T C = +250C(1) Total Power Dissipation Operating & Storage Temperature Range PT 2N6674 2N6689 300 450 450 2N6675 2N6690 400 650 650 7.0 5.0 15 2N6674 2N6675 6.0(2) 175 Unit Vdc Vdc Vdc Vdc Adc Adc 2N6689 2N6690 3.0(3) 175 T op; T stg -65 to +200 Symbol Max. 2N6674, 2N6675 TO-3 (TO-204AA)* W W 0 C THERMAL CHARACTERISTICS Characteristics Thermal Resistance, Junction-to-Case 1) 2) 3) RJC Unit 2N6689, 2N6690 TO-61* 0 1.0 C/W Derate linearly 1.0 W/0C for T C > 250C Derate linearly 34.2 mW/0C for T A > 250C Derate linearly 17.1 mW/0C for T A > 250C * See Appendix A for Package Outline ELECTRICAL CHARACTERISTICS (TC = 250C unless otherwise noted) Characteristics Symbol Min. 2N6674, 2N6689 2N6675, 2N6690 V(BR)CEO 300 400 2N6674, 2N6689 2N6675, 2N6690 ICEX Max. Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage IC = 200 mAdc Collector-Emitter Cutoff Current VCE = 450 Vdc, VBE = -1.5 Vdc VCE = 650 Vdc, VBE = -1.5 Vdc 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803 Vdc 0.1 0.1 mAdc 120101 Page 1 of 2 2N6674, 2N6675, 2N6689, 2N6690 JAN SERIES ELECTRICAL CHARACTERISTICS (con't) Characteristics Emitter-Base Cutoff Current VEB = 7.0 Vdc Collector-Base Cutoff Current VCB = 450 Vdc VCB = 650 Vdc Symbol Min. IEBO 2N6674, 2N6689 2N6675, 2N6690 Max. 2.0 ICBO 1.0 1.0 Unit mAdc mAdc ON CHARACTERISTICS (4) Forward-Current Transfer Ratio IC = 1 Adc; VCE = 3.0 Vdc IC = 10 Adc; VCE = 2.0 Vdc Collector-Emitter Saturation Voltage IC = 10 Adc; IB = 2 Adc IC = 15 Adc; IB = 5 Adc Base-Emitter Saturation Voltage IC = 10 Adc; IB = 2 Adc hFE 15 8 40 20 VCE(sat) 1.0 5.0 Vdc VBE(sat) 1.5 Vdc DYNAMIC CHARACTERISTICS Small-Signal Short-Circuit Forward Current Transfer Ratio IC = 1.0 Adc, VCE = 10 Vdc, f = 5 MHz Output Capacitance VCB = 10 Vdc, IE = 0, 100 kHz f 1.0 MHz hfe 3.0 10 Cobo 150 500 pF 0.1 0.6 2.5 0.5 0.5 s s s s s SWITCHING CHARACTERISTICS Delay Time Rise Time Storage Time Fall Time Cross-Over Time t d r t s t f t c t See Figure 3 of MIL-PRF-19500/537 SAFE OPERATING AREA DC Tests (continuous dc) T C = +250C, power application time = 1.0 s; 1 Cycle, (See Figure 4 of MIL-PRF-19500/537) Test 1 VCE = 11.7 Vdc, IC = 15 Adc All Types Test 2 VCE = 30 Vdc, IC = 5.9 Adc 2N6674, 2N6675 Test 3 VCE = 100 Vdc, IC = 0.25 Adc All Types Test 4 VCE = 25 Vdc, IC = 7.0 Adc 2N6689, 2N6690 Test 5 VCE = 300 Vdc, IC = 20 mAdc 2N6674, 2N6689 VCE = 400 Vdc, IC = 10 mAdc 2N6675, 2N6690 Clamped Switching TA = 250C; VCC = 15 Vdc; Load condition B; RBB1 = 5 ; RBB2 = 1.5 ; VBB2 = 5 Vdc; L = 50 H; R of inductor = .05; RL = R of inductor. (See Figure 6 of MIL-PRF-19500/537) Clamp Voltage = 350; IC = 10 Adc 2N6674, 2N6689 Clamp Voltage = 450; IC = 10 Adc 2N6675, 2N6690 (4) Pulse Test: Pulse Width = 300s, Duty Cycle 2.0%. 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803 120101 Page 2 of 2