MOTOROLA SC (DIODES/OPTO) 2S5E D MM 6367255 0080920 1 mm737-2! | NOT RECOMMENDED FOR NEW DESIGNS PN Unijunction Transistors Silicon Unijunction Transistors ... designed for pulse and timing circuits, sensing circuits, and thyristor trigger circuits. | 2N4851 thru 2N4853 @ Low Peak-Point Current Ip = 0.4 pA Max PN UJTs e Low Emitter Reverse Current IgQ = 50 nA Max @ Fast Switching . Ba E 84 CASE 22A-01 STYLE 1 *MAXIMUM RATINGS (Ta = 25C unless otherwise noted.) ; Rating Symbol Value Unit ; RMS Power Dissipation, Note 1 Pp 300 mW RMS Emitter Current le 50 mA Peak-Pulse Ernitter Current, Note 2 ig 1.6 Amp Emitter Reverse Voltage : Ve2e 30 Volts Interbase Voltage, Note 3 Vg2B1 36 Valts Operating Junction Temperatura Range Ty -65 to +125 C Storage Temperature Range : _ Tstg -65 to +200 C *Indicates JEDEC Registered Data. Notes: 1, Darate 3 mWFC Increase in ambient temperature. 2. Duty cycle <= 1%, PRR = (sae Figure 6). 3. Based upon power dissipation at Ta = 26C. MOTOROLA THYRISTOR DEVICE DATA 3-39 MOTOROLA SC (DIODES/OPTO) @SE D MM 6367255 0040321 3 Mm 2N4851 thru 2N4853 T-37-A / ELECTRICAL CHARACTERISTICS (Ta = 25C unless otherwise noted.) J Rating Fig. No. Symbol Min | typ | Max |. Unit *Intrinsic Standoff Ratio, Note 1 4,8 n (Vgog1 = 10 V) 2N4851 0.86 _ 0.75 2N4852, 2N4853 0.70 _ 0.85 *Interbase Resistance 11, 12 BB 47 _ 9.1 k ohms (Va2p1 = 3V, le = 0) *Interbase Resistance Temperature Coefficient 12 aBB 0.2 -~ 08 BPC (Vp2g1 = 3V, le = 0, TA = -65 to +126C) ; Emitter Saturation Voltage, Note 2 VEBtisat) - 2.5 _ Volts (Vg281 = 10V, le = 50 mA) Modulated Interbase Current 1g2(mod)} _ 15 _ mA (Vp2g1 = 10 V, Ie = 50 mA) *Emitter Reverse Current 7 lEB20 pA (Vp2E = 30 V, Ip = 0) 2N4851, 2N4852 - - Sn ; 2N4863 _ _ 0.05 *Peak-Point Emitter Current 9, 10 fp uA (Vg2R1 = 26 V) 2N4851, 2N4852 _ ~ 2 2N4853 = = 0.4 *Valley-Point Current, Note 2 13, 14 ly mA (Vg287 = 20V, Rpg = 100 ohms) =2N4851 2 - - 2N4852 4 _ _ 2N4853 6 - {| - *Base-One Peak Pulse Voltage 2N4851 3, 17 Vosi 3 - - Volts 2N4852_C; 5 _ _ 2N4853 6 _- *Maximum Frequency of Oscillation 5 _ftmax) - 0.25 _ MHz *Indicates JEDEC Registered Data. Notes: 1. 1, Intrinsic standoff ratio, Is defined in terms of the peak-point voltage, Vp, by means of the equation: Vp = 7 Vg2e1 + Vp. where VF is about 0.49 volt at 25C @ Ip = 10 wA and decreases with temperature at about 2.6 mVPC. The test circuit is shown in Figure 4. Components Ry, Cy, and the UJT form a relaxation oscillator; the remaining circuitry serves as a peak-voltage detector, The forward drop of Diade Dy compensates for Vp. To use, the cal button is-pushad, and R3 is adjusted to make the current meter, My, read full scale. When the cal! button is released, the value of 7 fs read directly from the meter, if full scale on the meter reads 1. 2. Use pulse techniques: PW ~ 300 ys, duty cycle < 2% to avoid internal heating, which may result in erroneous readings, FIGURE 1 - UNIJUNCTION TRANSISTOR FIGURE 2 STATIC EMITTER SYMBOL AND NOMENCLATURE CHARACTERISTICS CURVES \ NEGATIVE pala RESISTANCE ch CUTOFF 4.1. REGIONele SATURATION REGION REGION 7 * peak le POINT EMITTER TO Be BASE ONE & ) CHARACTERISTIC VALLEY 81 Ve2et POINT VBE4 (sat) frost Ve Vy 7 = ' i 1 bao =0 ' Ip oly e| [a -_ leo [oor MOTOROLA THYRISTOR DEVICE DATA 3-40 eed MOTOROLA SC (DIODES/OPTO) 2SE D MM b3b7255 gosod22 5 mm 2N4851 thru 2N4853 T-37-Al FIGURE 3 Vogt FIGURE 4 7 TEST CIRCUIT. TEST CIRCUIT +10 V V4 oO cat.-| sFi 9 210 k2 Ra AAA ia ve 7 MN 910 k2 Ot q Co Cy AY i iq, 10 RA FULL SCALE tD4, diode with the following = characteristics: Vp-= 0.49 V @1le =10LA IR <2.00A@VR_Q=20V leg20. lep2s, EMITTER REVERSE CURRENT {pA} FIGURE 6 f (max) FIGURE 6 ~ PAR TEST CIRCUIT TEST CIRCUIT AND WAVEFORM v4 DUTY CYCLE < 1%, PRR < 10 pps QO +20V a toft 4 . 0 = c 2 Ry Rag O15 A DUTY ton Riso 100 2 CYCLE =." RyADJUSTED 1.54 FOR fimax) CURRENT WAVEFORM THRU Ry ey ~ b_ 7 10.0 pF 3 TO 20-30 V Ret $ FREQUENCY (Adjust for 472) counter 1SA o peak in Ry) TYPICAL CHARACTERISTICS FIGURE 7 EMITTER REVERSE CURRENT FIGURE 8 INTRINSIC STANDOFF RATIO 30V SW OPEN FOR IE5p20 o SEO FORT = swf SWGLOSEO FOR lep2s g * Py - Qo a =z < b 9 a = = e 2 5 0 Oo 2 40 Ty, JUNCTION TEMPERATURE (C) Ty, JUNCTION TEMPERATURE (C) MOTOROLA THYRISTOR DEVICE DATA 3-41 (eset : MOTOROLA SC (DIODES/OPTO) 25E D MM b367255 0080923 7 mm 2N4851 thru 2N4853 T- 37-al PEAK POINT CURRENT FIGURE 9 EFFECT OF VOLTAGE FIGURE 10 ~ EFFECT OF TEMPERATURE Ty = 250 Ip, PEAK-POINT EMITTER CURRENT (A) Ip, PEAK-POINT EMITTER CURRENT (nA) 30 +60 90 12 +18 18 at 2 27 -s0 -20~~0 40 Ve291. INTERBASE VOLTAGE (VOLTS) J), JUNCTION TEMPERATURE (C) INTERBASE RESISTANCE FIGURE 11 EFFECT OF VOLTAGE FIGURE 12 EFFECT OF TEMPERATURE @30V Ve291 73.0 2N4863 Ty = 250 e290 le=0 2N4851 Rgp, INTERBASE RESISTANCE (kh - Bap, INTERBASE RESISTANCE, NORMALIZED Ve2e1 INTERBASE VOLTAGE (VOLTS) Ty, JUNCTION TEMPERATURE (0C} TYPICAL CHARACTERISTICS VALLEY CURRENT FIGURE 13 EFFECT OF VOLTAGE . FIGURE 14 ~ EFFECT OF TEMPERATURE 16 Ty* 2506 a ly, VALLEY POINT CURRENT {mA} ly, VALLEY POINT CURRENT (mA) Ve291, INTERBASE VOLTAGE (VOLTS) Ty, JUNCTION TEMPERATURE (C) MOTOROLA THYRISTOR DEVICE DATA 3-42 MOTOROLA SC (DIODES/OPTO) 2@S5E D MM 6367255 00805c4 7 2N4851 thru 2N4853 T-37-al VALLEY VOLTAGE FIGURE 15 EFFECT OF VOLTAGE FIGURE 16 EFFECT OF TEMPERATURE 5 Vp2B1 7 10V 8 a 5 a g 2 5 3 = ? > re] uy : : 2 > 0 60- 90 12 15 18 a rh 2 30 : 0 20 80 100 120 140 Vg201, INTERBASE VOLTAGE (VOLTS) Ty, MUNGTION TEMPERATURE (C) FIGURE 17 ~ GUTPUT VOLTAGE = 100 20 El Ag2= 100 The 259C ~ 2N4051 w 2N4853 0.2 0.6 A 20 5.0 10 y, CIRCUIT CAPACITANCE, EMITTER TO GROUND (uF) Vag1, BASE-ONE PEAK PULSE VOLTAGE (VOLTS) tt Oe eh tne Be osc Sel ees 2 Sr eed eel eT el Et Bent LA EE ne irks 3 MOTOROLA THYRISTOR DEVICE DATA 3-43