MUN5332DW1, NSBC143EPDXV6, NSBC143EPDP6 Complementary Bias Resistor Transistors R1 = 4.7 kW, R2 = 4.7 kW www.onsemi.com NPN and PNP Transistors with Monolithic Bias Resistor Network This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space. Features * * * * * PIN CONNECTIONS (3) (2) R1 Q2 R2 6 SOT-363 CASE 419B Unit Collector-Base Voltage VCBO 50 Vdc Collector-Emitter Voltage VCEO 50 Vdc IC 100 mAdc Input Forward Voltage VIN(fwd) 30 Vdc Input Reverse Voltage VIN(rev) 10 Vdc Collector Current - Continuous Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. ORDERING INFORMATION Package Shipping MUN5332DW1T1G, NSVMUN5332DW1T1G* SOT-363 3,000/Tape & Reel NSVMUN5332DW1T3G* SOT-363 10,000/Tape & Reel NSBC143EPDXV6T1G SOT-563 4,000/Tape & Reel NSBC143EPDP6T5G SOT-963 8,000/Tape & Reel Device 32 MG G 1 SOT-563 CASE 463A SOT-963 CASE 527AD 32/V M G 32 MG 1 V Max (6) MARKING DIAGRAMS (TA = 25C both polarities Q1 (PNP) & Q2 (NPN), unless otherwise noted) Symbol R1 (5) MAXIMUM RATINGS Rating R2 Q1 (4) Simplifies Circuit Design Reduces Board Space Reduces Component Count S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable* These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant (1) M 1 = Specific Device Code = Date Code* = Pb-Free Package (Note: Microdot may be in either location) *Date Code orientation may vary depending upon manufacturing location. For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. (c) Semiconductor Components Industries, LLC, 2013 June, 2017 - Rev. 2 45 Publication Order Number: DTC143EP/D MUN5332DW1, NSBC143EPDXV6, NSBC143EPDP6 THERMAL CHARACTERISTICS Characteristic Symbol Max Unit 187 256 1.5 2.0 mW MUN5332DW1 (SOT-363) ONE JUNCTION HEATED PD Total Device Dissipation (Note 31) TA = 25C (Note 32) Derate above 25C (Note 31) (Note 32) Thermal Resistance, Junction to Ambient (Note 31) (Note 32) RqJA mW/C 670 490 C/W 250 385 2.0 3.0 mW MUN5332DW1 (SOT-363) BOTH JUNCTION HEATED (Note 33) PD Total Device Dissipation (Note 31) TA = 25C (Note 32) Derate above 25C (Note 31) (Note 32) Thermal Resistance, Junction to Ambient (Note 32) RqJA (Note 31) Thermal Resistance, Junction to Lead (Note 31) (Note 32) RqJL Junction and Storage Temperature Range TJ, Tstg 493 325 188 208 mW/C C/W C/W -55 to +150 C 357 2.9 mW mW/C NSBC143EPDXV6 (SOT-563) ONE JUNCTION HEATED PD Total Device Dissipation (Note 31) TA = 25C Derate above 25C (Note 31) Thermal Resistance, Junction to Ambient RqJA (Note 31) 350 C/W NSBC143EPDXV6 (SOT-563) BOTH JUNCTION HEATED (Note 33) PD Total Device Dissipation (Note 31) TA = 25C Derate above 25C (Note 31) Thermal Resistance, Junction to Ambient RqJA (Note 31) Junction and Storage Temperature Range TJ, Tstg 500 4.0 250 mW mW/C C/W -55 to +150 C 231 269 1.9 2.2 MW NSBC143EPDP6 (SOT-963) ONE JUNCTION HEATED PD Total Device Dissipation (Note 34) TA = 25C (Note 35) Derate above 25C (Note 34) (Note 35) Thermal Resistance, Junction to Ambient (Note 35) RqJA (Note 34) 540 464 mW/C C/W NSBC143EPDP6 (SOT-963) BOTH JUNCTION HEATED (Note 33) PD Total Device Dissipation (Note 34) TA = 25C (Note 35) Derate above 25C (Note 34) (Note 35) Thermal Resistance, Junction to Ambient (Note 35) RqJA (Note 34) Junction and Storage Temperature Range TJ, Tstg 31. FR-4 @ Minimum Pad. 32. FR-4 @ 1.0 x 1.0 Inch Pad. 33. Both junction heated values assume total power is sum of two equally powered channels. 34. FR-4 @ 100 mm2, 1 oz. copper traces, still air. 35. FR-4 @ 500 mm2, 1 oz. copper traces, still air. www.onsemi.com 46 339 408 2.7 3.3 369 306 -55 to +150 MW mW/C C/W C MUN5332DW1, NSBC143EPDXV6, NSBC143EPDP6 ELECTRICAL CHARACTERISTICS (TA = 25C both polarities Q1 (PNP) & Q2 (NPN), unless otherwise noted) Symbol Characteristic Min Typ Max - - 100 - - 500 - - 1.5 50 - - 50 - - 15 30 - - - 0.25 - - 1.2 1.2 - - - - 2.4 2.8 - - - - 0.2 4.9 - - Unit OFF CHARACTERISTICS Collector-Base Cutoff Current (VCB = 50 V, IE = 0) ICBO Collector-Emitter Cutoff Current (VCE = 50 V, IB = 0) ICEO Emitter-Base Cutoff Current (VEB = 6.0 V, IC = 0) IEBO Collector-Base Breakdown Voltage (IC = 10 mA, IE = 0) V(BR)CBO Collector-Emitter Breakdown Voltage (Note 36) (IC = 2.0 mA, IB = 0) V(BR)CEO nAdc nAdc mAdc Vdc Vdc ON CHARACTERISTICS hFE DC Current Gain (Note 36) (IC = 5.0 mA, VCE = 10 V) Collector-Emitter Saturation Voltage (Note 36) (IC = 10 mA, IB = 1.0 mA) VCE(sat) Input Voltage (Off) (VCE = 5.0 V, IC = 100 mA) (NPN) (VCE = 5.0 V, IC = 100 mA) (PNP) Vi(off) Input Voltage (On) (VCE = 0.2 V, IC = 20 mA) (NPN) (VCE = 0.2 V, IC = 20 mA) (PNP) Vi(on) Output Voltage (On) (VCC = 5.0 V, VB = 2.5 V, RL = 1.0 kW) VOL Output Voltage (Off) (VCC = 5.0 V, VB = 0.25 V, RL = 1.0 kW) VOH Input Resistor R1 3.3 4.7 6.1 Resistor Ratio R1/R2 0.8 1.0 1.2 36. Pulsed Condition: Pulse Width = 300 ms, Duty Cycle 2%. PD, POWER DISSIPATION (mW) 400 350 300 250 200 (1) SOT-363; 1.0 x 1.0 Inch Pad (2) SOT-563; Minimum Pad (3) SOT-963; 100 mm2, 1 oz. Copper Trace (1) (2) (3) 150 100 50 0 -50 -25 0 25 50 75 100 125 150 AMBIENT TEMPERATURE (C) Figure 77. Derating Curve www.onsemi.com 47 V Vdc Vdc Vdc Vdc kW MUN5332DW1, NSBC143EPDXV6, NSBC143EPDP6 1000 1 VCE = 10 V 0.1 hFE, DC CURRENT GAIN IC/IB = 10 150C 25C -55C 0.01 0 10 20 30 40 10 1 0.1 1 10 100 Figure 78. VCE(sat), vs. IC Figure 79. DC Current Gain 3.2 2.8 100 2.4 2.0 1.6 1.2 0.8 0.4 10 20 30 40 -55C 10 1 0.1 VO = 5 V 0.01 50 25C 150C 0 1 2 3 4 VR, REVERSE VOLTAGE (V) Vin, INPUT VOLTAGE (V) Figure 80. Output Capacitance Figure 81. Output Current vs. Input Voltage 100 Vin, INPUT VOLTAGE (V) Cob, OUTPUT CAPACITANCE (pF) -55C IC, COLLECTOR CURRENT (mA) f = 10 kHz IE = 0 A TA = 25C 0 150C IC, COLLECTOR CURRENT (mA) 3.6 0 25C 100 0.1 50 IC, COLLECTOR CURRENT (mA) VCE(sat), COLLECTOR-EMITTER VOLTAGE (V) TYPICAL CHARACTERISTICS - NPN TRANSISTOR MUN5332DW1, NSBC143EPDXV6 10 25C -55C 1 150C VO = 0.2 V 0.1 0 10 20 30 40 IC, COLLECTOR CURRENT (mA) Figure 82. Input Voltage vs. Output Current www.onsemi.com 48 50 5 MUN5332DW1, NSBC143EPDXV6, NSBC143EPDP6 1 1000 IC/IB = 10 VCE = 10 V hFE, DC CURRENT GAIN VCE(sat), COLLECTOR-EMITTER VOLTAGE (V) TYPICAL CHARACTERISTICS - PNP TRANSISTOR MUN5332DW1, NSBC143EPDXV6 75C 0.1 -25C 25C 0.01 0.001 0 20 40 30 10 IC, COLLECTOR CURRENT (mA) 25C 10 TA = -25C 1 50 75C 100 1 10 IC, COLLECTOR CURRENT (mA) Figure 83. VCE(sat) vs. IC Figure 84. DC Current Gain 100 8 IC, COLLECTOR CURRENT (mA) f = 10 kHz lE = 0 A TA = 25C 7 6 5 4 3 2 1 0 0 10 20 30 40 VR, REVERSE VOLTAGE (V) 10 25C 1 TA = -25C 0.1 0.01 0.001 50 75C VO = 5 V 0 Figure 85. Output Capacitance 1 2 7 3 4 5 6 Vin, INPUT VOLTAGE (V) TA = -25C 1 75C 25C VO = 0.2 V 0.1 0 8 9 Figure 86. Output Current vs. Input Voltage 10 Vin, INPUT VOLTAGE (V) Cob, OUTPUT CAPACITANCE (pF) 10 9 100 40 10 20 30 IC, COLLECTOR CURRENT (mA) Figure 87. Input Voltage vs. Output Current www.onsemi.com 49 50 10 MUN5332DW1, NSBC143EPDXV6, NSBC143EPDP6 1 1000 VCE = 10 V IC/IB = 10 hFE, DC CURRENT GAIN VCE(sat), COLLECTOR-EMITTER VOLTAGE (V) TYPICAL CHARACTERISTICS - NPN TRANSISTOR NSBC143EPDP6 25C 0.1 150C -55C 0.01 0 10 20 30 40 10 1 0.1 1 100 Figure 88. VCE(sat), vs. IC Figure 89. DC Current Gain 100 2.0 IC, COLLECTOR CURRENT (mA) f = 10 kHz IE = 0 A TA = 25C 1.6 1.2 0.8 0.4 0 10 IC, COLLECTOR CURRENT (mA) 10 20 30 40 25C -55C 10 1 0.1 VO = 5 V 0.01 50 150C 0 1 2 3 VR, REVERSE VOLTAGE (V) Vin, INPUT VOLTAGE (V) Figure 90. Output Capacitance Figure 91. Output Current vs. Input Voltage 10 Vin, INPUT VOLTAGE (V) Cob, OUTPUT CAPACITANCE (pF) -55C IC, COLLECTOR CURRENT (mA) 2.4 0 150C 100 0.1 50 25C 25C -55C 150C 1 VO = 0.2 V 0.1 0 10 20 30 40 IC, COLLECTOR CURRENT (mA) Figure 92. Input Voltage vs. Output Current www.onsemi.com 50 50 4 MUN5332DW1, NSBC143EPDXV6, NSBC143EPDP6 1 1000 25C 25C hFE, DC CURRENT GAIN IC/IB = 10 150C 0.1 -55C 0.01 0 10 20 30 40 -55C 10 1 10 100 Figure 93. VCE(sat) vs. IC Figure 94. DC Current Gain 100 f = 10 kHz IE = 0 A TA = 25C 5 4 3 2 1 10 20 30 40 -55C 10 25C 1 0.1 VO = 5 V 0.01 50 150C 0 1 2 3 4 5 6 VR, REVERSE VOLTAGE (V) Vin, INPUT VOLTAGE (V) Figure 95. Output Capacitance Figure 96. Output Current vs. Input Voltage 100 Vin, INPUT VOLTAGE (V) 0 1 0.1 IC, COLLECTOR CURRENT (mA) 6 0 0.1 50 IC, COLLECTOR CURRENT (mA) 7 Cob, OUTPUT CAPACITANCE (pF) 150C 100 VCE = 10 V IC, COLLECTOR CURRENT (mA) VCE(sat), COLLECTOR-EMITTER VOLTAGE (V) TYPICAL CHARACTERISTICS - PNP TRANSISTOR NSBC143EPDP6 25C 10 -55C 1 0.1 150C VO = 0.2 V 0 10 20 30 40 IC, COLLECTOR CURRENT (mA) Figure 97. Input Voltage vs. Output Current www.onsemi.com 51 50 7 MUN5332DW1, NSBC143EPDXV6, NSBC143EPDP6 PACKAGE DIMENSIONS SC-88/SC70-6/SOT-363 CASE 419B-02 ISSUE Y 2X aaa H D D A D 6 5 GAGE PLANE 4 2 L L2 E1 E 1 NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. DIMENSIONS D AND E1 DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. MOLD FLASH, PROTRUSIONS, OR GATE BURRS SHALL NOT EXCEED 0.20 PER END. 4. DIMENSIONS D AND E1 AT THE OUTERMOST EXTREMES OF THE PLASTIC BODY AND DATUM H. 5. DATUMS A AND B ARE DETERMINED AT DATUM H. 6. DIMENSIONS b AND c APPLY TO THE FLAT SECTION OF THE LEAD BETWEEN 0.08 AND 0.15 FROM THE TIP. 7. DIMENSION b DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.08 TOTAL IN EXCESS OF DIMENSION b AT MAXIMUM MATERIAL CONDITION. THE DAMBAR CANNOT BE LOCATED ON THE LOWER RADIUS OF THE FOOT. H DETAIL A 3 aaa C 2X bbb H D 2X 3 TIPS e B 6X ddd TOP VIEW A2 A 6X ccc C A1 SIDE VIEW DIM A A1 A2 b C D E E1 e L L2 aaa bbb ccc ddd b C M C A-B D DETAIL A SEATING PLANE END VIEW c MILLIMETERS MIN NOM MAX --- --- 1.10 0.00 --- 0.10 0.70 0.90 1.00 0.15 0.20 0.25 0.08 0.15 0.22 1.80 2.00 2.20 2.00 2.10 2.20 1.15 1.25 1.35 0.65 BSC 0.26 0.36 0.46 0.15 BSC 0.15 0.30 0.10 0.10 RECOMMENDED SOLDERING FOOTPRINT* 6X 6X 0.30 0.66 2.50 0.65 PITCH DIMENSIONS: MILLIMETERS *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. www.onsemi.com 52 INCHES NOM MAX --- 0.043 --- 0.004 0.035 0.039 0.008 0.010 0.006 0.009 0.078 0.086 0.082 0.086 0.049 0.053 0.026 BSC 0.010 0.014 0.018 0.006 BSC 0.006 0.012 0.004 0.004 MIN --- 0.000 0.027 0.006 0.003 0.070 0.078 0.045 MUN5332DW1, NSBC143EPDXV6, NSBC143EPDP6 PACKAGE DIMENSIONS SOT-563, 6 LEAD CASE 463A ISSUE G D -X- 5 6 1 e 2 A 4 E -Y- 3 b NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETERS 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. L DIM A b C D E e L HE HE C 5 PL 6 0.08 (0.003) M X Y MILLIMETERS MIN NOM MAX 0.50 0.55 0.60 0.17 0.22 0.27 0.08 0.12 0.18 1.50 1.60 1.70 1.10 1.20 1.30 0.5 BSC 0.10 0.20 0.30 1.50 1.60 1.70 SOLDERING FOOTPRINT* 0.3 0.0118 0.45 0.0177 1.35 0.0531 1.0 0.0394 0.5 0.5 0.0197 0.0197 SCALE 20:1 mm inches *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. www.onsemi.com 53 INCHES NOM MAX 0.021 0.023 0.009 0.011 0.005 0.007 0.062 0.066 0.047 0.051 0.02 BSC 0.004 0.008 0.012 0.059 0.062 0.066 MIN 0.020 0.007 0.003 0.059 0.043 MUN5332DW1, NSBC143EPDXV6, NSBC143EPDP6 PACKAGE DIMENSIONS SOT-963 CASE 527AD ISSUE E X Y D 6 5 4 1 2 3 HE E e 6X 6X BOTTOM VIEW DIM A b C D E e HE L L2 C SIDE VIEW TOP VIEW 6X L2 NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. A L MILLIMETERS MIN NOM MAX 0.34 0.37 0.40 0.10 0.15 0.20 0.07 0.12 0.17 0.95 1.00 1.05 0.75 0.80 0.85 0.35 BSC 0.95 1.00 1.05 0.19 REF 0.05 0.10 0.15 b 0.08 X Y RECOMMENDED MOUNTING FOOTPRINT* 6X 6X 0.35 0.20 PACKAGE OUTLINE 1.20 0.35 PITCH DIMENSIONS: MILLIMETERS *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor's product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. 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