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FEATURES
LOWDRIFT|VGS1‐2/T|=5µV/°CTYP.
ULTRALOWLEAKAGEIG=150fATYP.
LOWPINCHOFFV
p
=2VTYP.
ABSOLUTEMAXIMUMRATINGS
@25°C(unlessotherwisenoted)
MaximumTemperatures
StorageTemperature‐65°Cto+150°C
OperatingJunctionTemperature+150°C
MaximumVoltageandCurrentforEachTransistor–Note1
‐VGSSGateVoltagetoDrainorSource40V
‐VDSODraintoSourceVoltage40V
‐IG
(
f
)
GateForwardCurrent10mA
‐IGGateReverseCurrent10µA
MaximumPowerDissipation
DeviceDissipation@FreeAir–Total40mW@+125°C
MATCHINGCHARACTERISTICS@25°CUNLESSOTHERWISENOTED
SYMBOLCHARACTERISTICSVALUEUNITSCONDITIONS
|VGS1‐2/T|max.DRIFTVS.
TEMPERATURE
5µV/°CVDG=10V,ID=30µA
TA=‐55°Cto+125°C
|VGS1‐2|max.OFFSETVOLTAGE5mVVDG=10V,ID=30µA
ELECTRICALCHARACTERISTICS@25°C(unlessotherwisenoted)
SYMBOLCHARACTERISTICSMIN.TYP.MAX.UNITSCONDITIONS
BVGSSBreakdownVoltage4060 ‐‐ VVDS=0ID=1nA
BVGGOGate‐To‐GateBreakdown40 ‐‐ ‐‐ V IG=1nAID=0IS=0
YfSS
TRANSCONDUCTANCE
FullConduction
70
300
500
µmho
VDG=10VVGS=0Vf=1kHz
YfSTypicalOperation50100200µmho VDG=10VID=30µAf=1kHz
|YFS1‐2/YFS|Mismatch ‐‐ 15%
IDSS
DRAINCURRENT
FullConduction
60
400
1000
µA
VDG=10VVGS=0V
|IDSS1‐2/IDSS|MismatchatFullConduction ‐‐ 25%
VGS(off)orV
p
GATEVOLTAGE
Pinchoffvoltage
0.6
2
4.5
V
VDS=10VID=1nA
VGS(on)OperatingRange ‐‐ ‐‐ 4V VDS=10VID=30µA
‐IGmax.
GATECURRENT
Operating
‐‐
‐‐
1
pA
VDG=10VID=30µA
‐IGmax.HighTemperature ‐‐ ‐‐ 1nATA=+125°C
‐IGSSmax.AtFullConduction ‐‐ ‐‐ 2pAVDS=0VVGS=20V
‐IGSSmax.HighTemperature ‐‐ ‐‐ 5nATA=+125°C
IGGOGate‐to‐GateLeakage ‐‐ 1 ‐‐ pAVGG=20V
YOSS
OUTPUTCONDUCTANCE
FullConduction
‐‐
‐‐
5
µmho
VDG=10VVGS=0V
YOSOperating ‐‐ 0.10.1VDG=10VID=30µA
|YOS1‐2|Differential ‐‐ 0.010.1
CMR
COMMONMODEREJECTION
‐20log|∆VGS1‐2/∆VDS|
‐‐
90
‐‐
dB
∆VDS=10to20VID=30µA
CMR‐20log|∆VGS1‐2/∆VDS| ‐‐ 90 ‐‐ ∆VDS=5to10VID=30µA
NF
NOISE
Figure
‐‐
‐‐
1
dB
VDS=10VVGS=0VRG=10MΩ
f=100HzNBW=6Hz
enVoltage ‐‐ 2070nV/√HzVDG=10VID=30µAf=10HzNBW=1Hz
CISS
CAPACITANCE
Input
‐‐
‐‐
3
pF
VDS=10VVGS=0Vf=1MHz
CRSSReverseTransfer ‐‐ ‐‐ 1.5
CDDDrain‐to‐Drain ‐‐ ‐‐ 0.1VDG=20VID=30µA
2N5906
LOW NOISE, LOW DRIFT
MONOLITHIC DUAL
N-
C
HANNEL
J
FET
Note 1 – These ratings are limiting values above which the serviceability of any semiconductor may be impaired TO-78 (Bottom View)
Available Packages:
2N5906 in TO-78
2N5906 available as bare die
Please contact Micross for full package and die dimensions
Micross Components Europe
Tel: +44 1603 788967
Email: chipcomponents@micross.com
Web: http://www.micross.com/distribution
2N5906 Benefits:
Tight Tracking
Good matching
Ultra Low Leakage
Low Drift
The 2N5906 is a high-performance monolithic dual
JFET featuring tight matching and low drift over
temperature specifications, and is targeted for use in a
wide range of precision instrumentation applications
where tight tracking is required.
The hermetically sealed TO-78 package is well suited
for hi-reliability and harsh environment applications.
(See Packaging Information).