SILICON HIGH POWER
NPN TRANSISTOR
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Semelab
Semelab Semelab
Semelab Limited
LimitedLimited
Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com Website: http://www.semelab-tt.com Document Number 7506
Issue 4
Page 1 of 3
2N5672
• High Current Rating
• Hermetic TO3 Metal Package.
• Designed For High Speed Switching Applications
• Screening Options Available
ABSOLUTE MAXIMUM RATINGS
(TC = 25°C unless otherwise stated)
VCBO Collector – Base Voltage 150V
VCEO Collector – Emitter Voltage 120V
VEBO Emitter – Base Voltage 7.0V
IC Continuous Collector Current 30A
IB Base Current 10A
PD Total Power Dissipation at TA = 25°C 6W
Derate Above 25°C 34mW/°C
PD Total Power Dissipation at TC = 25°C 140W
Derate Above 25°C 800mW/°C
TJ Junction Temperature Range -65 to +200°C
Tstg Storage Temperature Range -65 to +200°C
THERMAL PROPERTIES
Symbols Parameters Max. Units
RθJC
Thermal Resistance, Junction To Case 1.25 °C/W
SILICON HIGH POWER
NPN TRANSISTOR
2N5672
Semelab Limited
Semelab LimitedSemelab Limited
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com Website: http://www.semelab-tt.com
Document Number 7506
Issue 4
Page 2 of 3
ELECTRICAL CHARACTERISTICS
(TC = 25°C unless otherwise stated)
Symbols Parameters Test Conditions Min.
Typ Max.
Units
V(BR)CEO
(1)
Collector-Emitter
Breakdown Voltage IC = 50mA IB = 0 120
V
V(BR)CEX Collector-Emitter
Breakdown Voltage IC = 10mA VBE = -1.5V 150
V(BR)CER
(1)
Collector-Emitter
Breakdown Voltage IC = 10mA RBE = 50Ω 140
ICEX Collector-Emitter Cut-Off
Current VCE = 135V VBE = -1.5V
10
mA
ICEO Collector-Emitter Cut-Off
Current
VCE = 80V IB = 0 10
IEBO Emitter Cut-Off Current VEB = 7.0V IC = 0 10
hFE
(1)
DC Current Gain
IC = 20A VCE = 5.0V 20
IC = 15A VCE = 2.0V 20 100
VBE
(1)
Base-Emitter Voltage IC = 15A VCE = 5.0V 1.6
V
VCE(sat)
(1)
Collector-Emitter Saturation
Voltage IC = 15A IB = 1.2A 0.75
VBE(sat)
(1)
Base-Emitter Saturation
Voltage IC = 15A IB = 1.2A 1.5
DYNAMIC CHARACTERISTICS
fT Transition Frequency
IC = 2.0A VCE = 10V
30 MHz
f = 5.0MHz
Cobo Output Capacitance
VCB = 10V IE = 0
900 pF
f = 1.0MHz
ton Turn-on Time VCC = 30V IC = 15A
IB1 = -IB2 = 1.2A
0.5
µs
toff Turn-off Time 2.0
Notes
NotesNotes
Notes
(1) Pulse Width ≤ 380us, δ ≤ 2%
SILICON HIGH POWER
NPN TRANSISTOR
2N5672
Semelab Limited
Semelab LimitedSemelab Limited
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com Website: http://www.semelab-tt.com
Document Number 7506
Issue 4
Page 3 of 3
MECHANICAL DATA
Dimensions in mm (inches)
TO3 (TO-204AA)
Pin 1 - Base Pin 2 - Emitter Case - Collector
