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06/22/11
PD - 96375
HEXFET® Power MOSFET
Description
AUIRFP064N
S
D
G
GDS
Gate Drain Source
Absolute Maximum Ratings
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These
are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated
in the specifications is not implied.Exposure to absolute-maximum-rated conditions for extended periods may affect
device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air
conditions. Ambient temperature (TA) is 25°C, unless otherwise specified.
AUTOMOTIVE GRADE
Features
TO-247AC
S
D
G
D
HEXFET® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
l
Advanced Planar Technology
l
Low On-Resistance
l
Dynamic dV/dT Rating
l
175°C Operating Temperature
l
Fast Switching
l
Fully Avalanche Rated
l
Repetitive Avalanche Allowed up to Tjmax
l
Lead-Free, RoHS Compliant
l
Automotive Qualified *
Specifically designed for Automotive applications, this
Cellular design of HEXFET® Power MOSFETs utilizes
the latest processing techniques to achieve low on-
resistance per silicon area. This benefit combined with
the fast switching speed and ruggedized device design
that HEXFET power MOSFETs are well known for,
provides the designer with an extremely efficient and
reliable device for use in Automotive and a wide variety
of other applications.
Parameter Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V A
IDM Pulsed Drain Current
c
PD @TC = 25°C Power Dissipation W
Linear Derating Factor W/°C
VGS Gate-to-Source Voltage
V
EAS Single Pulse Avalanche Energy
d
mJ
IAR Avalanche Current
c
A
EAR Repetitive Avalanche Energy
c
mJ
dv/dt Peak Diode Recovery dv/dt
e
V/ns
TJ Operating Junction and
TSTG Storage Temperature Range
°C
Soldering Temperature, for 10 seconds
Mounting Torque, 6-32 or M3 screw
Thermal Resistance
Parameter Typ. Max. Units
RθJC Junction-to-Case ––– 0.75
RθCS Case-to-Sink, Flat, Greased Surface 0.24 ––– °C/W
R
θ
JA Junction-to-Ambient ––– 40
-55 to + 175
300 (1.6mm from case )
10 lbf
y
in (1.1N
y
m)
200
1.3
± 20
Max.
110
g
80
g
390
20
480
59
5.0
V
(BR)DSS
55V
R
DS(on)
max. 0.008Ω
I
D
110A
g
AUIRFP064N
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S
D
G
Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11).
VDD = 25V, starting TJ = 25°C, L = 190μH,
RG = 25Ω, IAS = 59A.(See Figure 12)
ISD ≤ 59A, di/dt ≤ 290A/µs, VDD ≤ V(BR)DSS, TJ ≤ 175°C
Notes:
Pulse width ≤ 300µs; duty cycle ≤ 2%
Calculated continuous current based on maximum allowable
junction temperature; for recommended current-handling of the
package refere to Desing Tip # 93-4
Static Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
Min.
Typ.
Max.
Units
V
(BR)DSS
Drain-to-Source Breakdown Voltage 55 ––– ––– V
ΔV
(BR)DSS
/ΔT
J
Breakdown Voltage Temp. Coefficient ––– 0.057 ––– V/°C
R
DS(on)
Static Drain-to-Source On-Resistance ––– ––– 0.008 Ω
V
GS(th)
Gate Threshold Voltage 2.0 ––– 4.0 V
gfs Forward Transconductance 42 ––– ––– S
I
DSS
Drain-to-Source Leakage Current ––– ––– 25
––– ––– 250
I
GSS
Gate-to-Source Forward Leakage ––– ––– 100
Gate-to-Source Reverse Leakage ––– ––– -100
Dynamic E lectrical Characteri stics @ T
J
= 25°C (unless oth erwi se specified)
Q
g
Total Gate Charge ––– ––– 170
Q
gs
Gate-to-Source Charge ––– ––– 32
Q
gd
Gate-to-Drain ("Miller") Charge ––– ––– 74
t
d(on)
Turn-On Delay Time ––– 14 –––
t
r
Rise Time ––– 100 –––
t
d(off)
Turn-Off Delay Time ––– 43 –––
t
f
Fall Time ––– 70 –––
L
D
Internal Drain Inductance Between lead,
6mm (0.25in.)
L
S
Internal Source Inductance from package
and center of die contact
C
iss
Input Capacitance ––– 4000 –––
C
oss
Output Capacitance ––– 1300 –––
C
rss
Reverse Transfer Capacitance ––– 480 –––
Diode Characteri stics
Parameter
Min.
Typ.
Max.
Units
I
S
Continuous Source Current
(Body Diode)
I
SM
Pulsed Source Current
(Body Diode)
c
V
SD
Diode Forward Voltage ––– ––– 1.3 V
t
rr
Reverse Recovery Time ––– 110 170 ns
Q
rr
Reverse Recovery Charge ––– 450 680 nC
V
DD
= 28V
I
D
= 59A
R
G
= 2.5Ω
V
GS
= -20V
T
J
= 25°C, I
S
= 59A, V
GS
= 0V
f
T
J
= 25°C, I
F
= 59A
di/dt = 100A/μs
f
Conditions
V
GS
= 0V, I
D
= 250μA
Reference to 25°C, I
D
= 1mA
V
GS
= 10V, I
D
= 59A
f
V
DS
= V
GS
, I
D
= 250μA
V
DS
= 55V, V
GS
= 0V
V
DS
= 44V, V
GS
= 0V, T
J
= 150°C
MOSFET symbol
showing the
integral reverse
–––
nH
pF
A
p-n junction diode.
V
DS
= 25V, I
D
= 59A
f
I
D
= 59A
V
DS
= 44V
Conditions
R
D
= 0.39Ω,See Fig.10
f
V
GS
= 0V
V
DS
= 25V
ƒ = 1.0MHz,See Fig.5
V
GS
= 20V
V
GS
= 10V,See Fig.6 and 13
f
––– –––
5.0
13
–––
μA
nA
nC
ns
––– ––– 110
g
390––––––
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Qualification Information
†
3L-TO-247 N/A
RoHS Compliant Yes
ESD
Machine Model Class M4(+/- 800V )
†††
(per AEC-Q101-002)
Human Body Model Class H1B(+/- 4000V )
†††
(per AEC-Q101-001)
Charged Device Model Class C5(+/- 2000V )
†††
(per AEC-Q101-005)
Moisture Sensitivity Level
Qualification Level
Automotive
(per AEC-Q101)
††
Comments: This part number(s) passed Automotive
qualification. IR’s Industrial and Consumer qualification level is
granted by extension of the higher Automotive level.
† Qualification standards can be found at International Rectifier’s web site: http//www.irf.com/
†† Exceptions to AEC-Q101 requirements are noted in the qualification report.
††† Highest passing voltage
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TO-247AC Part Marking Information
TO-247AC Package Outline
Dimensions are shown in millimeters (inches)
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
Lot Code
YWWA
XX or XX
Part Number
IR Logo
AUFP064N
Date Code
Y= Year
WW= Work Week
A= Automotive, Lead Free
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Ordering Information
Base part
Package Typ e
Standard Pack
Complete Part Number
Form
Quantity
AUIRFP064N
TO-247
Tube
25
AUIRFP064N
AUIRFP064N
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