IPB200N25N3 G IPP200N25N3 G
IPI200N25N3 G
OptiMOSTM3 Power-Transistor
Features
• N-channel, normal level
• Excellent gate charge x RDS(on) product (FOM)
• Very low on-resistance RDS(on)
• 175 °C operating temperature
• Pb-free lead plating; RoHS compliant
• Qualified according to JEDEC1) for target application
• Halogen-free according to IEC61249-2-21
• Ideal for high-frequency switching and synchronous rectification
Maximum ratings, at Tj=25 °C, unless otherwise specified
Parameter Symbol Conditions Unit
Continuous drain current
IDTC=25 °C 64 A
TC=100 °C 46
Pulsed drain current2) ID,pulse TC=25 °C 256
Avalanche energy, single pulse
EAS ID=47 A, RGS=25 W320 mJ
Reverse diode dv/dtdv/dt10 kV/µs
Gate source voltage
VGS ±20 V
Power dissipation
Ptot TC=25 °C 300 W
Operating and storage temperature
Tj, Tstg -55 ... 175 °C
IEC climatic category; DIN IEC 68-1 55/175/56
2) See figure 3
Value
1)J-STD20 and JESD22
VDS
250
V
RDS(on),max
20
mW
64
A
Product Summary
Type
IPB200N25N3 G
IPP200N25N3 G
IPI200N25N3 G
Package
PG-TO263-3
PG-TO220-3
PG-TO262-3
Marking
200N25N
200N25N
200N25N
Rev. 2.4 page 1 2011-07-14
IPB200N25N3 G IPP200N25N3 G
IPI200N25N3 G
Parameter Symbol Conditions Unit
min. typ. max.
Thermal characteristics
Thermal resistance, junction - case
RthJC - - 0.5 K/W
RthJA minimal footprint - - 62
6 cm2 cooling area3) - - 40
Electrical characteristics, at Tj=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
V(BR)DSS VGS=0 V, ID=1 mA 250 - - V
Gate threshold voltage
VGS(th) VDS=VGS, ID=270 µA 2 3 4
Zero gate voltage drain current
IDSS
VDS=200 V, VGS=0 V,
Tj=25 °C
-0.1 1µA
VDS=200 V, VGS=0 V,
Tj=125 °C
-10 100
Gate-source leakage current
IGSS VGS=20 V, VDS=0 V - 1 100 nA
Drain-source on-state resistance
RDS(on) VGS=10 V, ID=64 A -17.5 20 mW
Gate resistance
RG-2.4 -W
Transconductance
gfs
|VDS|>2|ID|RDS(on)max,
ID=64 A
61 122 - S
Values
Thermal resistance, junction -
ambient
3) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
Rev. 2.4 page 2 2011-07-14
IPB200N25N3 G IPP200N25N3 G
IPI200N25N3 G
Parameter Symbol Conditions Unit
min. typ. max.
Dynamic characteristics
Input capacitance
Ciss -5340 7100 pF
Output capacitance
Coss -297 395
Reverse transfer capacitance
Crss - 4 -
Turn-on delay time
td(on) -18 -ns
Rise time
tr-20 -
Turn-off delay time
td(off) -45 -
Fall time
tf-12 -
Gate Charge Characteristics4)
Gate to source charge
Qgs -22 -nC
Gate to drain charge
Qgd - 7 -
Switching charge
Qsw -13 -
Gate charge total
Qg-64 86
Gate plateau voltage
Vplateau -4.2 - V
Output charge
Qoss VDD=100 V, VGS=0 V -135 179 nC
Reverse Diode
Diode continous forward current IS- - 64 A
Diode pulse current
IS,pulse - - 256
Diode forward voltage
VSD
VGS=0 V, IF=64 A,
Tj=25 °C
- 1 1.2 V
Reverse recovery time
trr -170 -ns
Reverse recovery charge
Qrr -780 -nC
4) See figure 16 for gate charge parameter definition
VR=100 V, IF=25 A,
diF/dt=100 A/µs
TC=25 °C
Values
VGS=0 V, VDS=100 V,
f=1 MHz
VDD=100 V,
VGS=10 V, ID=25 A,
RG=1.6 W
VDD=100 V, ID=25 A,
VGS=0 to 10 V
Rev. 2.4 page 3 2011-07-14
IPB200N25N3 G IPP200N25N3 G
IPI200N25N3 G
1 Power dissipation 2 Drain current
Ptot=f(TC)ID=f(TC); VGS≥10 V
3 Safe operating area 4 Max. transient thermal impedance
ID=f(VDS); TC=25 °C; D=0 ZthJC=f(tp)
parameter: tpparameter: D=tp/T
single pulse
0.01
0.02
0.05
0.1
0.2
0.5
10-5
10-4
10-3
10-2
10-1
100
10-2
10-1
100
ZthJC [K/W]
tp[s]
0
40
80
120
160
200
240
280
320
050 100 150 200
Ptot [W]
TC[°C]
0
10
20
30
40
50
60
70
050 100 150 200
ID[A]
TC[°C]
1 µs
10 µs
100 µs
1 ms
10 ms
DC
10-1
100
101
102
103
10-1
100
101
102
103
ID[A]
VDS [V]
Rev. 2.4 page 4 2011-07-14
IPB200N25N3 G IPP200N25N3 G
IPI200N25N3 G
5 Typ. output characteristics 6 Typ. drain-source on resistance
ID=f(VDS); Tj=25 °C RDS(on)=f(ID); Tj=25 °C
parameter: VGS parameter: VGS
7 Typ. transfer characteristics 8 Typ. forward transconductance
ID=f(VGS); |VDS|>2|ID|RDS(on)max gfs=f(ID); Tj=25 °C
parameter: Tj
4.5 V
5 V
7 V
10 V
0
5
10
15
20
25
30
020 40 60 80 100 120 140
RDS(on) [mW]
ID[A]
25 °C
175 °C
0
20
40
60
80
100
120
140
02468
ID[A]
VGS [V]
0
20
40
60
80
100
120
140
160
180
025 50 75 100 125
gfs [S]
ID[A]
4.5 V
5 V
7 V
10 V
0
25
50
75
100
125
150
0 1 2 3 4 5
ID[A]
VDS [V]
Rev. 2.4 page 5 2011-07-14
IPB200N25N3 G IPP200N25N3 G
IPI200N25N3 G
9 Drain-source on-state resistance 10 Typ. gate threshold voltage
RDS(on)=f(Tj); ID=64 A; VGS=10 V VGS(th)=f(Tj); VGS=VDS
parameter: ID
11 Typ. capacitances 12 Forward characteristics of reverse diode
C=f(VDS); VGS=0 V; f=1 MHz IF=f(VSD)
parameter: Tj
typ
98%
0
10
20
30
40
50
60
70
-60 -20 20 60 100 140 180
RDS(on) [mW]
Tj[°C]
270 µA
2700 µA
0
0.5
1
1.5
2
2.5
3
3.5
4
-60 -20 20 60 100 140 180
VGS(th) [V]
Tj[°C]
Ciss
Coss
Crss
101
102
103
104
040 80 120 160
C [pF]
VDS [V]
25 °C
175 °C
25°C, 98%
175°C, 98%
100
101
102
103
0 0.5 1 1.5 2
IF[A]
VSD [V]
Rev. 2.4 page 6 2011-07-14
IPB200N25N3 G IPP200N25N3 G
IPI200N25N3 G
13 Avalanche characteristics 14 Typ. gate charge
IAS=f(tAV); RGS=25 WVGS=f(Qgate); ID=25 A pulsed
parameter: Tj(start) parameter: VDD
15 Drain-source breakdown voltage 16 Gate charge waveforms
VBR(DSS)=f(Tj); ID=1 mA
50 V
125 V
200 V
0
2
4
6
8
10
020 40 60 80
VGS [V]
Qgate [nC]
220
230
240
250
260
270
280
290
-60 -20 20 60 100 140 180
VBR(DSS) [V]
Tj[°C]
VGS
Qgate
Vgs(th)
Qg(th)
Qgs
Qgd
Qsw
Qg
25 °C
100 °C
125 °C
1
10
100
110 100 1000
IAS [A]
tAV [µs]
Rev. 2.4 page 7 2011-07-14
IPB200N25N3 G IPP200N25N3 G
IPI200N25N3 G
PG-TO220-3: Outline
Rev. 2.4 page 8 2011-07-14
IPB200N25N3 G IPP200N25N3 G
IPI200N25N3 G
PG-TO263-3: Outline
Rev. 2.4 page 9 2011-07-14
IPB200N25N3 G IPP200N25N3 G
IPI200N25N3 G
PG-TO262-3: Outline
Rev. 2.4 page 10 2011-07-14
IPB200N25N3 G IPP200N25N3 G
IPI200N25N3 G
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2009 Infineon Technologies AG
All Rights Reserved.
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Rev. 2.4 page 11 2011-07-14