NTR4501NT3 - ON Semiconductor

August, 2012 − Rev. 12

1Publication Order Number:

NTR4501N/D

NTR4501N, NSTR4501N

Power MOSFET

20 V, 3.2 A, Single N−Channel, SOT−23

Features

•Leading Planar Technology for Low Gate Charge / Fast Switching

•2.5 V Rated for Low Voltage Gate Drive

•SOT−23 Surface Mount for Small Footprint

•NSTR Prefix for Automotive and Other Applications Requiring

Unique Site and Control Change Requirements; AEC−Q101

Qualified and PPAP Capable

•These Devices are Pb−Free and are RoHS Compliant

Applications

•Load/Power Switch for Portables

•Load/Power Switch for Computing

•DC−DC Conversion

MAXIMUM RATINGS (TJ= 25°C unless otherwise stated)

Parameter Symbol Value Unit

Drain−to−Source Voltage VDSS 20 V

Gate−to−Source Voltage VGS ±12 V

Continuous Drain

Current (Note 1)

Steady

State

TA = 25°CID3.2 A

TA = 85°C 2.4 A

Steady State Power

Dissipation (Note 1)

Steady State PD1.25 W

Pulsed Drain Current tp = 10 msIDM 10.0 A

Operating Junction and Storage Temperature TJ,

Tstg

−55 to

150

°C

Continuous Source Current (Body Diode) IS1.6 A

Lead Temperature for Soldering Purposes

(1/8” from case for 10 s)

TL260 °C

THERMAL RESISTANCE RATINGS

Parameter Symbol Max Unit

Junction−to−Ambient (Note 1) RqJA 100 °C/W

Junction−to−Ambient (Note 2) RqJA 300

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. Surface−mounted on FR4 board using 1 in sq pad size

(Cu area = 1.127 in sq [1 oz] including traces).

2. Surface−mounted on FR4 board using the minimum recommended pad size.

Device Package Shipping†

ORDERING INFORMATION

20 V

88 mW @ 2.5 V

70 mW @ 4.5 V

RDS(on) Typ

3.6 A

ID Max

(Note 1)

V(BR)DSS

SOT−23

CASE 318

STYLE 21

MARKING DIAGRAM &

PIN ASSIGNMENT

N−Channel

3.1 A

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

NTR4501NT1G SOT−23

(Pb−Free)

3000 / Tape & Reel

TR1 = Device Code

M = Date Code*

G= Pb−Free Package

(Note: Microdot may be in either location)

*Date Code orientation and/or overbar may

vary depending upon manufacturing location.

Drain

Gate

Source

TR1 M G

http://onsemi.com

NSTR4501NT1G 3000 / Tape & ReelSOT−23

(Pb−Free)

NTR4501N, NSTR4501N

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Electrical Characteristics (TJ = 25°C unless otherwise specified)

Parameter Symbol Test Condition Min Typ Max Units

OFF CHARACTERISTICS

Drain−to−Source Breakdown Voltage (Note 3) V(BR)DSS VGS = 0 V, ID = 250 mA20 24.5 V

Drain−to−Source Breakdown Voltage

Temperature Coefficient

V(BR)DSS/TJ22 mV/°C

Zero Gate Voltage Drain Current IDSS VGS = 0 V TJ = 25°C 1.5 mA

VDS = 16 V TJ = 85°C 10 mA

Gate−to−Source Leakage Current IGSS VDS = 0 V, VGS = ±12 V ±100 nA

ON CHARACTERISTICS

Gate Threshold Voltage (Note 3) VGS(TH) VGS = VDS, ID = 250 mA0.65 1.2 V

Negative Threshold

Temperature Coefficient

VGS(TH)/TJ−2.3 mV/°C

Drain−to−Source On Resistance

RDS(on)

VGS = 4.5 V, ID = 3.6 A 70 80

VGS = 2.5 V, ID = 3.1 A 88 105

Forward Transconductance gFS VDS = 5.0 V, ID = 3.6 A 9 S

CHARGES AND CAPACITANCES

Input Capacitance Ciss

VGS = 0 V, f = 1.0 MHz,

VDS = 10 V

200

Output Capacitance Coss 80

Reverse Transfer Capacitance Crss 50

Total Gate Charge QG(TOT)

VGS = 4.5 V, VDS = 10 V,

ID = 3.6 A

2.4 6.0

Gate−to−Source Gate Charge QGS 0.5

Gate−to−Drain Charge QGD 0.6

SWITCHING CHARACTERISTICS (Note 4)

Turn−On Delay Time td(on)

VGS = 4.5 V, VDS = 10 V,

ID = 3.6 A, RG = 6.0 W

6.5 13

Rise Time tr12 24

Turn−Off Delay Time td(off) 12 24

Fall Time tf3 6

SOURCE−DRAIN DIODE CHARACTERISTICS

Forward Diode Voltage VSD VGS = 0 V, ISD = 1.6 A 0.8 1.2 V

Reverse Recovery Time tRR

VGS = 0 V,

dIS/dt = 100 A/ms,

IS = 1.6 A

7.1

Charge Time ta5

Discharge Time tb1.9

Reverse Recovery Charge QRR 3.0 nC

3. Pulse Test: Pulse width v 300 ms, duty cycle v 2%.

4. Switching characteristics are independent of operating junction temperatures.

NTR4501N, NSTR4501N

http://onsemi.com

VDS ≥ 10 V

VGS = 1.8 V

1.0

2.0

3.0

4.0

5.0

6.0

7.0

012345678910

VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)

ID, DRAIN CURRENT (AMPS)

Figure 1. On−Region Characteristics

VGS = 10 V

VGS = 1.6 V

VGS = 1.4 V

VGS = 3.0 V

VGS = 2.0 V TJ = 25°C

0.5 1.0 1.5 2.0 2.5

VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)

ID, DRAIN CURRENT (AMPS)

Figure 2. Transfer Characteristics

TJ = 25°C

TJ = −55°C

TJ = 125°C

0.25

123 6

VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)

RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)

Figure 3. On−Resistance versus

Gate−to−Source Voltage

ID = 3.2 A

TJ = 25°C

0.05

0.06

0.07

0.08

0.09

23 456

ID, DRAIN CURRENT (AMPS)

RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)

Figure 4. On−Resistance versus Drain

Current and Gate Voltage

1.4

−50 −25 0 25 50 75 100 125

TJ, JUNCTION TEMPERATURE (°C)

RDS(on), DRAIN−TO−SOURCE

RESISTANCE (NORMALIZED)

Figure 5. On−Resistance Variation with

Temperature

ID = 3.2 A

VGS = 4.5 V

1.0

1000

2 6 10 14 18

100

VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)

Figure 6. Drain−to−Source Leakage

Current versus Voltage

VGS = 0 V

TJ = 150°C

TJ = 100°C

IDSS, LEAKAGE (nA)

VGS = 2.5 V

VGS = 4.5 V

150

VGS = 2.2 V

VGS = 1.2 V

0.20

0.15

0.10

0.05 45

0.10

TJ = 25°C

1.2

1.0

0.8

0.6

2012 1648

NTR4501N, NSTR4501N

http://onsemi.com

td(on)

350

0 2.5 5 7.5 10 15 20

DRAIN−TO−SOURCE VOLTAGE (VOLTS)

Figure 7. Capacitance Variation

Crss

Coss

Ciss

VGS = 0 V

TJ = 25°C

C, CAPACITANCE (pF)

1.0

2.0

4.0

5.0

0 0.5 1.0 1.5 2.0

QG, TOTAL GATE CHARGE (nC)

VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)

Figure 8. Gate−to−Source and Drain−to−Source

Voltage versus Total Charge

TJ = 25°C

ID = 3.2 A

QGD

QGS

VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)

100

1 10 100

t, TIME (ns)

Figure 9. Resistive Switching Time Variation

versus Gate Resistance

VDS = 10 V

ID = 3.2 A

VGS = 4.5 V

td(off)

RG, GATE RESISTANCE (W)

0.3 0.6 0.9

VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS)

IS, SOURCE CURRENT (AMPS)

Figure 10. Diode Forward Voltage versus

Current

VGS = 0 V

TJ = 25°C

12.5 17.5

300

250

200

150

100

3.0

2.5 3.0

VGS

VDS

0.1

1.2

0.1

100

1000

0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000

0.1

0.2

0.02

D = 0.5

0.05

0.01

SINGLE PULSE

PULSE TIME, tp (s)

Figure 11. Thermal Response

TRANSIENT THERMAL RESISTANCE,

RqJA (°C/W)

NTR4501N, NSTR4501N

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PACKAGE DIMENSIONS

SOT−23 (TO−236)

CASE 318−08

ISSUE AP

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH

THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM

THICKNESS OF BASE MATERIAL.

4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,

PROTRUSIONS, OR GATE BURRS.

ǒmm

inchesǓ

SCALE 10:1

0.8

0.031

0.9

0.035

0.95

0.037

0.95

0.037

2.0

0.079

SOLDERING FOOTPRINT

VIEW C

0.25

SEE VIEW C

DIM

MIN NOM MAX MIN

MILLIMETERS

0.89 1.00 1.11 0.035

INCHES

A1 0.01 0.06 0.10 0.001

b0.37 0.44 0.50 0.015

c0.09 0.13 0.18 0.003

D2.80 2.90 3.04 0.110

E1.20 1.30 1.40 0.047

e1.78 1.90 2.04 0.070

L0.10 0.20 0.30 0.004

0.040 0.044

0.002 0.004

0.018 0.020

0.005 0.007

0.114 0.120

0.051 0.055

0.075 0.081

0.008 0.012

NOM MAX

2.10 2.40 2.64 0.083 0.094 0.104

0.35 0.54 0.69 0.014 0.021 0.029

0−−− 10 0 −−− 10

q°°°°

STYLE 21:

PIN 1. GATE

2. SOURCE

3. DRAIN

*For additional information on our Pb−Free strategy and soldering

details, please download the ON Semiconductor Soldering and

Mounting Techniques Reference Manual, SOLDERRM/D.

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limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications

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Phone: 421 33 790 2910

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Phone: 81−3−5817−1050

NTR4501N/D

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