UNISONIC TECHNOLOGIES CO.,LTD.
MMBTA44/45 NPN EPITAXIAL SILICON TRANSISTOR
www.unisonic.com.tw 1
Copyright © 2005 Unisonic Technologies Co.,LTD. QW-R206-007.B
HIGH VOLTAGE
TRANSISTOR
FEATURES
*Collector-Emitter voltage: VCEO=400V (UTC MMBTA44)
V
CEO=350V (UTC MMBTA45)
*Collector current up to 300mA
*Complement to UTC MMBTA94/93
*Power Dissipation: PD(max)=350mW
MARKING (MMBTA44)
3D
SOT-23
2
3
1
* Pb-free plating product number:
MMBTA44L/MMBTA45L
PIN CONFIGURATION
PIN NO. PIN NAME
1 Emitter
2 Base
3 Collector
ORDERING INFORMATION
Order Number
Normal Lead free
Package Packing
MMBTA44-AE3-R MMBTA44L-AE3-R SOT-23 Tape Reel
MMBTA45-AE3-R MMBTA45L-AE3-R SOT-23 Tape Reel
MMBTA44/45 NPN EPITAXIAL SILICON TRANSISTOR
UNISONIC TECHNOLOGIES CO., LTD 2
www.unisonic.com.tw QW-R206-007.B
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL RATINGS UNIT
MMBTA44 500
Collector-Base Voltage MMBTA45 VCBO 400 V
MMBTA44 400
Collector-Emitter Voltage MMBTA45 VCEO 350 V
Emitter-Base Voltage VEBO 6 V
Collector Current Ic 300 mA
Ta=25°C 350 mW
Power Dissipation Tc=25°C PD 1.5 W
Junction Temperature TJ +150 °C
Storage Temperature TSTG -40 ~ +150 °C
ELECTRICAL CHARACTERISTICS (Tj =25°C, unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT
MMBTA44 500 Collector-Base Breakdown
Voltage MMBTA45 BVCBO Ic=100µA, IB=0 400 V
MMBTA44 400 Collector-Emitter Breakdown
Voltage MMBTA45 BVCEO Ic=1mA, IB=0 350 V
Emitter-Base Breakdown Voltage BVEBO I
E=100µA, Ic=0 6 V
Collector-Emitter Saturation Voltage VCE(sat) Ic=1mA, IB=0.1mA
Ic=10mA, IB=1mA
Ic=50mA, IB=5mA
0.4
0.5
0.75 V
Base-Emitter Saturation Voltage VBE(sat) Ic=10mA, IB=1mA 0.75 V
MMBTA44 VCB=400V, IE =0 0.1
Collector Cut-off Current MMBTA45 ICBO VCB=320V, IE =0 0.1
µA
MMBTA44 VCE =400V, IB=0 0.5
Collector Cut-off Current MMBTA45 ICES VCE =320V, IB=0 0.5
µA
Emitter Cut-off Current IEBO V
EB=4V, Ic=0 0.1 µA
DC Current Gain(Note) hFE
VCE =10V, Ic=1mA
VCE =10V, Ic=10mA
VCE =10V, Ic=50mA
VCE =10V, Ic=100mA
40
50
45
40
240
Current Gain Bandwidth Product fT VCE =20V, Ic=10mA
f=100MHz 50 MHz
Output Capacitance Cob V
CB=20V, IE =0, f=1MHz 7 pF
Note: Pulse test: PW<300µs, Duty Cycle<2%
MMBTA44/45 NPN EPITAXIAL SILICON TRANSISTOR
UNISONIC TECHNOLOGIES CO., LTD 3
www.unisonic.com.tw QW-R206-007.B
TYPICAL CHARACTERISTICS
10
1
10
2
10
3
10
4
10
0
-40
-20
0
20
40
60
80
100
120
140 V
CE
=10V
DC current gain
Collector Current, I
C
(mA) 10
0
10
1
10
2
10
-1
Time (μs)
T urn-on switching times
V
CE
=150V
Ic/I
B
=10
Ta=25℃
V
BE( OFF)
=4V
T
f
T
d
Collector Current, I
C
(mA)
10
1
10
0
DC Cur r ent G ain, H
FE
10
0
10
1
10
2
Collector Current, I
C
(mA)
10
-1
Time (μs)
Turn- off switching times
10
0
10
1
10
2
t
s
t
F
V
CE
=150V
Ic/I
B
=10
Ta=25℃
Capacitance
10
1
10
2
10
3
10
0
10-
1
Collec tor V oltage(V)
Capacitance(pF)
10
0
10
1
10
2
10
3
C
ib
C
ob
MMBTA44/45 NPN EPITAXIAL SILICON TRANSISTOR
UNISONIC TECHNOLOGIES CO., LTD 4
www.unisonic.com.tw QW-R206-007.B
ON voltage
10
1
10
2
10
3
10
0
10-
1
Collector Cur r ent, I
C
(mA)
Ta=25℃
Voltage(V)
0
0.2
0.4
0.6
0.8
1.0
V
BE (sat),
Ic/I
B
=10
V
BE(ON)
,V
CE
=10V
V
CE(sat)
,Ic/I
B
=10
Collec tor s aturation regi on
Base Current, I
B
(μA)
10
1
10
2
10
3
10
4
10
5
0
0.2
0.4
0.3
0.1
0.5
Collector-Emitter Voltage (V)
Ta=25℃
Ic=1mA Ic=10mA Ic=50mA
TYPICAL CHARACTERISTICS(cont.)
Collector current, I
C
(m A ) Collec tor v oltage(V)
10
1
10
2
10
3
10
0
10
-1
10
2
10
3
10
4
10
1
10
0
10
0
10
1
10
2
10
3
10
-1
10
0
10
1
10
2
Small signal current gain,H
FE
High f requenc y current gain S afe operating ar ea
V
CE
=10V
f=10MHz
Ta=25℃
Ic,
Collector current (mA)
10
4
V alid Duty
Cycle<10%
1s
1ms
0.1ms
MPSA44
Ta=25℃
Ta=25℃
MMBTA44/45 NPN EPITAXIAL SILICON TRANSISTOR
UNISONIC TECHNOLOGIES CO., LTD 5
www.unisonic.com.tw QW-R206-007.B
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malf unction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this docum ent does not form part of any quotation or contract, is believ ed to be accurate
and reliable and may be changed without notice.
