AON6200L 30V N-Channel MOSFET General Description Product Summary The AON6200L uses trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance. Conduction and switching losses are minimized due to an extremely low combination of RDS(ON) and Crss. VDS 30V 24A ID (at VGS=10V) RDS(ON) (at VGS=10V) < 7.8m RDS(ON) (at VGS = 4.5V) < 11m 100% UIS Tested 100% Rg Tested D Top View 1 8 2 7 3 6 4 5 G S DFN5X6 Absolute Maximum Ratings TA=25C unless otherwise noted Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current G TC=25C Pulsed Drain Current C Avalanche Current C Repetitive avalanche energy L=0.1mH C TC=25C Power Dissipation B TA=25C Power Dissipation A Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A AD Maximum Junction-to-Ambient Maximum Junction-to-Case Rev 0: March 2009 IAR 28 A EAR 39 mJ 35 Steady-State Steady-State W 14 1.95 RJA RJC www.aosmd.com W 1.25 TJ, TSTG Symbol t 10s A 10 PDSM TA=70C A 13 PD TC=100C V 130 IDSM TA=70C 20 18 IDM TA=25C Continuous Drain Current Units V 24 ID TC=100C Maximum 30 C -55 to 150 Typ 25 55 2.6 Max 30 64 3.5 Units C/W C/W C/W Page 1 of 1 AON6200L Electrical Characteristics (T J=25C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current Conditions Min ID=250A, VGS=0V VDS=30V, VGS=0V 5 IGSS Gate-Body leakage current VDS=0V, VGS= 20V Gate Threshold Voltage On state drain current VDS=VGS ID=250A 1.3 VGS=10V, VDS=5V 100 VGS=10V, ID=20A TJ=125C VGS=4.5V, ID=15A gFS Forward Transconductance VSD Diode Forward Voltage IS=1A,VGS=0V Maximum Body-Diode Continuous Current IS VDS=5V, ID=20A DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz VGS=10V, VDS=15V, ID=20A Units V 1 TJ=55C Static Drain-Source On-Resistance Max 30 VGS(th) ID(ON) RDS(ON) Typ A 100 nA 1.85 2.4 V 6.5 7.8 9 11 9 11 m 1 V 40 A A 60 0.7 m S 870 1090 1300 pF 340 490 640 pF 22 38 53 pF 0.4 0.9 1.4 12 16 20 nC 5 7 9 nC 2 2.5 3 nC 1.5 2.5 3.5 nC VGS=10V, VDS=15V, RL=0.75, RGEN=3 5 ns 2 ns 16 ns 2 ns trr Body Diode Reverse Recovery Time IF=20A, dI/dt=500A/s 10 13 16 Qrr Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/s 20 25 30 ns nC A. The value of RJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with TA =25C. The Power dissipation PDSM is based on R JA and the maximum allowed junction temperature of 150C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150C. Ratings are based on low frequency and duty cycles to keep initial TJ =25C. D. The RJA is the sum of the thermal impedence from junction to case R JC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300s pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=150C. The SOA curve provides a single pulse rating. G. The maximum current rating is limited by bond-wires. H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with TA=25C. COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev 0: March 2009 www.aosmd.com Page 2 of 6 AON6200L TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 80 50 10V 4V 4.5V 60 30 3.5V 40 ID(A) ID (A) VDS=5V 40 20 125C 20 10 VGS=3V 25C 0 0 0 1 2 3 4 1 5 1.5 2.5 3 3.5 4 VGS(Volts) Figure 2: Transfer Characteristics (Note E) VDS (Volts) Fig 1: On-Region Characteristics (Note E) 15 Normalized On-Resistance 1.6 12 VGS=4.5V RDS(ON) (m) 2 9 6 VGS=10V 3 VGS=10V ID=20A 1.4 17 5 2 10 1.2 VGS=4.5V ID=15A 1 0.8 0 0 5 0 10 15 20 25 30 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 25 50 75 100 125 150 175 Temperature (C) 0 Figure 4: On-Resistance vs. Junction Temperature 18 (Note E) 1.0E+02 30 ID=20A 1.0E+01 25 15 IS (A) RDS(ON) (m) 40 1.0E+00 20 125C 10 125C 1.0E-01 1.0E-02 25C 1.0E-03 25C 5 1.0E-04 1.0E-05 0 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) Rev 0: March 2009 www.aosmd.com 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) Page 3 of 6 AON6200L TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 1800 10 1400 Capacitance (pF) VGS (Volts) 1600 VDS=15V ID=20A 8 6 4 Ciss 1200 1000 800 600 Coss 400 2 Crss 200 0 0 0 3 6 9 12 15 Qg (nC) Figure 7: Gate-Charge Characteristics 0 18 10s 15 20 25 VDS (Volts) Figure 8: Capacitance Characteristics 10.0 100s DC 1ms 10ms 1.0 TJ(Max)=150C TC=25C 0.1 0.0 0.01 0.1 160 10s RDS(ON) limited Power (W) 100.0 ID (Amps) 10 30 200 1000.0 10 1 TJ(Max)=150C TC=25C 17 5 2 10 120 80 40 1 VDS (Volts) 10 100 0 0.0001 D=Ton/T TJ,PK=TC+PDM.ZJC.RJC 0.001 0.01 1 0 10 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 40 RJC=3.5C/W PD 0.1 Ton 0.01 0.00001 0.1 Pulse Width (s) 18 Figure 10: Single Pulse Power Rating Junction-toCase (Note F) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) ZJC Normalized Transient Thermal Resistance 5 Single Pulse 0.0001 0.001 0.01 0.1 T 1 10 100 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Rev 0: March 2009 www.aosmd.com Page 4 of 6 AON6200L TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 50 70 60 TA=25C 50 TA=100C 40 30 TA=150C 20 TA=125C 10 Power Dissipation (W) IAR (A) Peak Avalanche Current 80 40 30 20 10 0 0 0.000001 0 0.00001 0.0001 0.001 Time in avalanche, tA (s) Figure 12: Single Pulse Avalanche capability (Note C) 25 50 75 125 150 10000 30 TA=25C 25 1000 20 Power (W) Current rating ID(A) 100 TCASE (C) Figure 13: Power De-rating (Note F) 15 10 17 5 2 10 100 10 5 1 0.00001 0 0 25 50 75 100 125 150 ZJA Normalized Transient Thermal Resistance 10 1 D=Ton/T TJ,PK=TA+PDM.ZJA.RJA 0.001 0.1 10 0 1000 Pulse Width (s) 18 Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H) TCASE (C) Figure 14: Current De-rating (Note F) In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 40 RJA=64C/W 0.1 PD 0.01 Single Pulse Ton 0.001 0.00001 0.0001 0.001 0.01 0.1 1 T 10 100 1000 Pulse Width (s) Figure 16: Normalized Maximum Transient Thermal Impedance (Note H) Rev 0: March 2009 www.aosmd.com Page 5 of 6 AON6200L Gate Charge Test Circuit & W aveform Vgs Qg 10V + + Vds VDC - VDC DUT Qgs Qgd - Vgs Ig Charge Resistive Switching Test Circuit & W aveforms RL Vds Vds Vgs 90% + Vdd DUT VDC Rg - 10% Vgs Vgs t d(on) tr t d(off) ton tf toff Unclamped Inductive Switching (UIS) Test Circuit & W aveforms L 2 E AR = 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs VDC Rg - I AR Id DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vds - Isd Vgs Ig Rev 0: March 2009 Vgs L Isd + Vdd VDC - IF t rr dI/dt I RM Vdd Vds www.aosmd.com Page 6 of 6