MCMA25PD1200TB
Phase leg
Thyristor \ Diode Module
3 1 2
5 4
Part number
MCMA25PD1200TB
Backside: isolated
TAV
T
V V1.2
RRM
25
1200
=
V=V
I=A
2x
Features / Advantages: Applications: Package:
● Thyristor for line frequency
● Planar passivated chip
● Long-term stability
● Direct Copper Bonded Al2O3-ceramic
● Line rectifying 50/60 Hz
● Softstart AC motor control
● DC Motor control
● Power converter
● AC power control
● Lighting and temperature control
TO-240AA
● Industry standard outline
● RoHS compliant
● Soldering pins for PCB mounting
● Base plate: DCB ceramic
● Reduced weight
● Advanced power cycling
● Isolation Voltage: V~
4800
The data contained in this product data sheet is exclusively intended for technically trained staff. The user will have to evaluate the suitability of the product for the intended application and
the completeness of the product data with respect to his application. The specifications of our components may not be considered as an assurance of component characteristics. The
information in the valid application- and assembly notes must be considered. Should you require product information in excess of the data given in this product data sheet or which concerns
the specific application of your product, please contact your local sales office.
Due to technical requirements our product may contain dangerous substances. For information on the types in question please contact your local sales office.
Should you intend to use the product in aviation, in health or life endangering or life support applications, please notify. For any such application we urgently recommend
- to perform joint risk and quality assessments;
- the conclusion of quality agreements;
- to establish joint measures of an ongoing product survey, and that we may make delivery dependent on the realization of any such measures.
Terms Conditions of usage:
IXYS reserves the right to change limits, conditions and dimensions. 20161222cData according to IEC 60747and per semiconductor unless otherwise specified
© 2016 IXYS all rights reserved
MCMA25PD1200TB
V = V
A²s
A²s
A²s
A²s
Symbol
Definition
Ratings
typ.
max.
I
V
IA
V
T
1.22
R1.2 K/W
min.
25
VV
100T = 25°C
VJ
T = °C
VJ
mA4V = V
T = 25°C
VJ
I = A
T
V
T = °C
C
85
P
tot
90 WT = 25°C
C
25
1200
forward voltage drop
total power dissipation
Conditions
Unit
1.47
T = 25°C
VJ
140
V
T0
V0.87T = °C
VJ
140
r
T
13 mΩ
V1.20T = °C
VJ
I = A
T
V
25
1.52
I = A50
I = A50
threshold voltage
slope resistance for power loss calculation only
µA
125
VV1200T = 25°C
VJ
IA40
P
GM
Wt = 30 µs 10
max. gate power dissipation
P
T = °C
C
140
Wt = 5
P
P
GAV
W0.5
average gate power dissipation
C
J
16
junction capacitance
V = V400 T = 25°Cf = 1 MHz
RVJ
pF
I
TSM
t = 10 ms; (50 Hz), sine T = 45°C
VJ
max. forward surge current
T = °C
VJ
140
I²t T = 45°C
value for fusing
T = °C140
V = 0 V
R
V = 0 V
R
V = 0 V
V = 0 V
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
VJ
R
VJ
R
thJC
thermal resistance junction to case
T = °C
VJ
140
400
430
580
555
A
A
A
A
340
365
800
770
1200
300 µs
RMS forward current
T(RMS)
TAV
180° sine
average forward current
(di/dt)
cr
A/µs
150repetitive, I =T
VJ
= 125 °C; f = 50 Hz
critical rate of rise of current
V
GT
gate trigger voltage
V = 6 V T = °C25
(dv/dt) T = 125°C
critical rate of rise of voltage
A/µs500
V/µs
t = µs;
I A; V = ⅔ V
R = ∞; method 1 (linear voltage rise)
VJ
DVJ
75 A
T
P
G
= 0.45
di /dt A/µs;
G
=0.45
DRM
cr
V = ⅔ V
DRM
GK
1000
1.5 V
T = °C-40
VJ
I
GT
gate trigger current
V = 6 V T = °C25
DVJ
55 mA
T = °C-40
VJ
1.6 V
80 mA
V
GD
gate non-trigger voltage
T = °C
VJ
0.2 V
I
GD
gate non-trigger current
5 mA
V = ⅔ V
D DRM
140
latching current
T = °C
VJ
150 mA
I
L
25t µs
p
= 10
I A;
G
= 0.45 di /dt A/µs
G
= 0.45
holding current
T = °C
VJ
100 mA
I
H
25V = 6 V
D
R = ∞
GK
gate controlled delay time
T = °C
VJ
2 µs
t
gd
25
I A;
G
= 0.45 di /dt A/µs
G
= 0.45
V = ½ V
D DRM
turn-off time
T = °C
VJ
150 µs
t
q
di/dt = A/µs10 dv/dt = V/µs20
V =
R
100 V; I A;
T
= 25 V = ⅔ V
DRM
tµs
p
= 200
non-repet., I = 25 A
T
125
R
thCH
thermal resistance case to heatsink
K/W
Rectifier
1300
RRM/DRM
RSM/DSM
max. non-repetitive reverse/forward blocking voltage
max. repetitive reverse/forward blocking voltage
R/D
reverse current, drain current
T
T
R/D
R/D
200
0.20
IXYS reserves the right to change limits, conditions and dimensions. 20161222cData according to IEC 60747and per semiconductor unless otherwise specified
© 2016 IXYS all rights reserved
MCMA25PD1200TB
Ratings
C
M
M
A
25
PD
1200
TB
Part description
Thyristor (SCR)
Thyristor
(up to 1800V)
Phase leg
TO-240AA-1B
Module
=
=
=
=
Current Rating [A]
Reverse Voltage [V]
=
=
=
=
Package
T
op
°C
M
D
Nm4
mounting torque
2.5
T
VJ
°C140
virtual junction temperature
-40
Weight g81
Symbol
Definition
typ.
max.
min.
Conditions
operation temperature
Unit
M
T
Nm4
terminal torque
2.5
VV
t = 1 second
V
t = 1 minute
isolation voltage
mm
mm
13.0 9.7
16.0 16.0
d
Spp/App
creepage distance on surface | striking distance through air
d
Spb/Apb
terminal to backside
I
RMS
RMS current
60 A
per terminal
125-40
terminal to terminal
TO-240AA
Delivery Mode Quantity Code No.Ordering Number Marking on ProductOrdering
50/60 Hz, RMS; I ≤ 1 mA
ISOL
MCMA25PD1200TB 515983Box 36MCMA25PD1200TBStandard
4800
ISOL
T
stg
°C125
storage temperature
-40
4000
threshold voltage
V0.87
mΩ
V
0 max
R
0 max
slope resistance *
11.8
Equivalent Circuits for Simulation
T =
VJ
I
V
0
R
0
Thyristor
140 °C
* on die level
IXYS reserves the right to change limits, conditions and dimensions. 20161222cData according to IEC 60747and per semiconductor unless otherwise specified
© 2016 IXYS all rights reserved
MCMA25PD1200TB
3 1 2
5 4
Outlines TO-240AA
IXYS reserves the right to change limits, conditions and dimensions. 20161222cData according to IEC 60747and per semiconductor unless otherwise specified
© 2016 IXYS all rights reserved
MCMA25PD1200TB
0 40 80 120 160
0
20
40
60
80
0.01 0.10 1.00 10.00
0.1
1.0
10.0
100.0
0.01 0.1 1
100
200
300
4
00
0.5 1.0 1.5 2.0
0
20
40
60
8
0
1 10 100 1000 10000
0.00
0.20
0.40
0.60
0.80
1.00
1.20
1.40
I
T
[A]
t [s]
V
T
[V]
2 3 4 5 6 7 8 9 011
10
2
10
3
I
2
t
[A
2
s]
t [ms]
I
TSM
[A]
T
VJ
= 25°C
T
VJ
= 45°C
50 Hz, 80% V
RRM
T
VJ
= 45°C
V
R
= 0 V
I
TAVM
[A]
T
case
[°C]
Z
thJC
[K/W]
t [ms]
Fig. 1 Forward characteristics Fig. 2 Surge overload current
I
TSM
: crest value, t: duration
Fig. 3 I
2
t versus time (1-10 s)
Fig. 4 Gate voltage & gate current Fig. 6 Max. forward current at
case temperature
Fig. 8 Transient thermal impedance junction to case
t
gd
[μs]
I
G
[A]
lim.
typ.
Fig. 5 Gate controlled delay time t
gd
0 10 20 30
0
10
20
30
40
50
I
T(AV)
[A]
P
tot
[
W]
Fig. 7a Power dissipation versus direct output current
Fig. 7b and ambient temperature
0 40 80 120 160
T
amb
[°C]
dc =
1
0.5
0.4
0.33
0.17
0.08
dc =
1
0.5
0.4
0.33
0.17
0.08
1 10 100 1000 10000
0.1
1
10
V
G
[V]
I
G
[mA]
T
VJ
= 140°C
T
VJ
= 140°C
T
VJ
= 125°C
140°C
1
23
4
56
1: I
GD
, T
VJ
= 140°C
2: I
GT
, T
VJ
= 25°C
3: I
GT
, T
VJ
= -40°C
T
VJ
= 25°C
4: P
GAV
= 0.5 W
5: P
GM
= 5 W
6: P
GM
= 10 W
R
thHA
0.4
0.6
0.8
1.0
2.0
4.0
i R
thi
(K/W) t
i
(s)
1 0.0200 0.0004
2 0.1300 0.0090
3 0.2400 0.0140
4 0.4700 0.0700
5 0.3400 0.4000
Thyristor
IXYS reserves the right to change limits, conditions and dimensions. 20161222cData according to IEC 60747and per semiconductor unless otherwise specified
© 2016 IXYS all rights reserved
