TD62501~507PG/FG
2004-03-26
1
TOSHIBA Bipolar Digital Integrated Circuit SIlicon Monolithic
TD62501PG,TD62501FG,TD62502PG,TD62502FG,TD62503PG,TD62503FG,TD62504PG
TD62504FG,TD62505PG,TD62505FG,TD62506PG,TD62506FG,TD62507PG,TD62507FG
7ch Single Driver
TD62501PG/FG, TD62502PG/FG, TD62503PG/FG, TD62504PG/FG
Common emitter
TD62505PG/FG, TD62506PG/FG Common collector
TD62507PG/FG Isolated
The TD62501PG/FG Series are comprised of seven or five NPN
transistor array s.
For proper operation, the substrate (SUB) must be connected to
the most negative voltage.
Applications include relay, hammer, lamp and display (LED)
drivers.
Features
• Output current (single output) 200 mA (max)
• High sustaining voltag e output 35 V (min)
• Inputs compatible with various types of logic.
• TD62501PG/FG, TD62505PG/FG and TD62507PG/FG
: Using external resistor··· General Purpose
• TD62502PG/FG
: RIN = 10.5 kΩ + 7 V Zener Diode··· 14 to 25 V P-MOS
• TD62503PG/GF, TD62506PG/FG
: RIN = 2.7 kΩ··· TTL, 5 V C-MOS
• TD62504PG/FG: RIN = 10.5 kΩ··· 6 to 15 V P-MOS, C-MOS
• Package Type-PG: DIP-16 pin
• Package Type-FG: SOP-16 pin
TD62501PG, TD62502PG, TD62503PG,
TD62504PG, TD62505PG, TD62506PG,
TD62507PG
TD62501FG, TD62502FG, TD62503FG,
TD62504FG, TD62505FG, TD62506FG,
TD62507FG
Weight
DIP16-P-300-2.54A : 1.11g (typ.)
SOP16-P-225-1.27 : 0.16g (typ.)
TD62501~507PG/FG
2004-03-26
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Pin Assignment (top view)
TD62501PG/FG, TD62502PG/FG
TD62503PG/FG, TD62504PG/FG
TD62505PG/FG, TD62506PG/FG
TD62507PG/FG
*: NC pin assignment
The NC pin is not assigned to an internal chip of
these products; hence, no need to assign
necessarily. If it is needed, Toshiba recommends
that you connect the NC pin to the common emitter
(GND).
Schematics (each driver)
TD62501PG/FG
TD62502PG/FG
TD62503PG/FG
TD62504PG/FG
TD62503PG/FG R1 = 2.7 kΩ,
TD62504PG/FG R1 = 10.5 kΩ
∗: Parasitic diodes
Note: The input and output parasitic diodes cannot be used as clamp diodes.
Input
Output
Common
emitter
7 V
10.5 kΩ
10 kΩ
(*)
(*)
(*)
(*)
(*)
(*)
Input
Output
Common
emitter
(*)
(*)
(*)
(*)
(*)
(*)
12345 6 7 8
16 15 14 13 12 11
O1 O2 O3 O4 O5 O6 O7
I1 I2 I3 I4 I5 I6 I7 SUB
10 9
COM-C
1 2 3 45 6 7 8
16 15 14 13 12 11
O1 O2 O3 O4 O5 O6 O7 NC
I1 I2 I3 I4 I5 I6 I7 COM-E
10 9
Input
Output
Common
emitter
R1
10 kΩ
(*)
(*)
(*)
(*)
(*)
(*)
1 2 3 45 6 7 8
16 15 14 13 12 11
E5 B5 C4 E4 B4 B3 E3
C5 C1 E1 B1 SUB C2 E2
10 9
C3
B2
TD62501~507PG/FG
2004-03-26
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Schematics (Each driver)
TD62505PG/FG
TD62506PG/FG
TD62507PG/FG
∗: Parasitic diodes
Note: The input and output parasitic diodes cannot be used as clamp diodes.
Maximum Ratings (Ta = 25°C)
Characteristics Symbol Rating Unit
Collector-emitter voltage VCEO 35 V
Collector-base voltage VCBO 50 V
Collector current IC 200 mA/ch
VIN (Note 1) −0.5 to 45
Input voltage
VIN (Note 2) −0.5 to 30
V
Input current IIN (Note 3) 25 mA
Isolation voltage VSUB 35 V
PG 1.0
Power dissipation
FG
PD
0.625 (Note 4)
W
Operating temperature Topr −40 to 85 °C
Storage temperature Tstg −55 to 150 °C
Note 1: TD62506PG/FG
Note 2: TD62502PG/FG, TD62503PG/FG, TD62504PG/FG
Note 3: TD62501PG/FG, TD62505PG/FG, TD62507PG/FG
Note 4: On Glass Epoxy PCB (30 × 30 × 1.6 mm Cu 50%)
(*)
(*)
(*)
(*)
(*)
(*)
Input
Common
collector
SUB
Output
2.7 kΩ
(*)
(*)
GND (SUB)
(*)
(*)
(*)
(*)
(*)
(*)
(*)
(*)
Common
collector
SUB Output
(*)
(*)
(*)
(*)
(*)
(*)
TD62501~507PG/FG
2004-03-26
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Recommended Operating Conditions (Ta = −40 to 85°C)
Characteristics Symbol Condition Min Typ. Max Unit
Collector-emitter voltage VCEO ⎯ 0 ⎯ 35 V
Collector-base voltage VCBO ⎯ 0 ⎯ 50 V
Collector current IC ⎯ 0 ⎯ 150 mA/ch
Input voltage TD62506PG/FG VIN ⎯ 0 ⎯ 35 V
TD62502PG/FG 14.0 ⎯ 25
TD62503PG/FG 2.4 ⎯ 25
Input voltage
(Output on)
TD62504PG/FG
VIN (ON) IIN = 1 mA, IC = 10 mA
7.0 ⎯ 25
V
TD62502PG/FG 0 ⎯ 7.0
TD62503PG/FG 0 ⎯ 0.4
Input voltage
(Output off)
TD62504PG/FG
VIN (OFF) IC ≤ 10 µA
0 ⎯ 0.8
V
TD62501PG/FG
TD62505PG/FG
Input current
TD62507PG/FG
IIN ⎯ 0 ⎯ 10 mA
PG ⎯ ⎯ ⎯ 0.360
Power dissipation
FG
PD
(Note 1) ⎯ ⎯ 0.325
W
Note 1: 30 × 30 × 1.6 mm Cu 50%
Electrical Characteristics (Ta = 25°C)
Characteristics Symbol
Test
Circuit Test Condition Min Typ. Max Unit
Output leakage current ICEX 1 VCE = 25 V, VIN = 0 V ⎯ ⎯ 10 µA
IIN = 1 mA, IC = 10 mA ⎯ ⎯ 0.2
Collector-emitter saturation voltage VCE (sat) 2 IIN = 3 mA, IC = 150 mA
(Note 1) ⎯ ⎯ 0.8
V
(Note 2) 70 ⎯ ⎯
DCCurrent transfer ratio
(Note 3)
hFE 2 VCE = 10 V, IC = 10 mA
50 ⎯ ⎯
⎯
Turn-on delay tON 4 ⎯ 50 ⎯ ns
Turn−off delay tOFF 4
VOUT = 35 V, RL = 3.3 kΩ
CL = 15 pF ⎯ 200 ⎯ ns
Note 1: Except TD62502PG/FG Only
Note 2: Only TD62501PG/FG, TD62505PG/FG, TD62506PG/FG, TD62507PG/FG
Note 3: Only TD62502PG/FG, TD62503PG/FG, TD62504PG/FG
TD62501~507PG/FG
2004-03-26
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Test Circuit
1. ICEX 2. hFE, VCE (sat) 3. VIN (ON)
4. tON, tOFF
Note 1: Pulse width 50 µs, Duty cycle 10%
Output impedance 50 Ω, tr ≤ 5 ns, tf ≤ 10 ns
Note 2: See below
Input Condition
Type Number R1 VIH
TD62501PG/FG 2.7 kΩ3 V
TD62502PG/FG 0 Ω15 V
TD62503PG/FG 0 Ω3 V
TD62504PG/FG 0 Ω10 V
TD62505PG/FG 2.7 kΩ3 V
TD62506PG/FG 0 Ω3 V
TD62507PG/FG 2.7 kΩ3 V
Note 3: CL includes probe and jig capacitance
Precautions for Using
This IC does not integrate protection circuits such as overcurrent and overvoltage protectors.
Thus, if excess current or voltage is applied to the IC, the IC may be damaged. Please design the IC so that
excess current or voltage will not be applied to the IC.
Utmost care is necessary in the design of the output line, VCC and GND line since IC may be destroyed due to
short-circuit between outputs, air contamination fault, or fault by improper grounding.
10%
50%
tON t
OFF
tf tr
VIH
VOH
VOL
Input 50%
50 µs
Output 50% 50%
90%
10%
90%
0
VIN (ON)
IIN IC
ICEX
Open
VIN
VCE VCE, VCE (sat)
IC
IIN
hFE =IC
IIN
Pulse
generator
(Note 1)
Input
(Note 2)
R1 B C
E CL = 15 pF
(Note 3)
VOUT = 35 V
Output
RL = 3.3 kΩ
TD62501~507PG/FG
2004-03-26
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IC – IB
IC – VCE
VBE – IB
VCE (sat) – IC
Base current IB (mA) Collector-emitter voltage VCE (V)
Base current IB (mA)
Collector current IC (mA)
Collector current IC (mA)
Collector current IC (mA)
Base-emitter voltage VBE (V)
Collector-emitter saturation voltage
VCE (sat) (V)
0
0 75
0.8
150
1.2
1.0
0.2
(2)
0.6
0.4
(3)
(1) Type-PG FREE AIR
(2) Type-FG ON PCB
30 × 30 × 1.6 mm Cu 50%
On glass Epoxy PCB
(3) Type-FG FREE AIR
100 25
(1)
50 125
PD – Ta
hFE – IC
DC current transfer ratio hFE
Power dissipation PD (W)
Ambient temperature Ta (°C)
Collector current IC (mA)
0
0 0.4
80
0.8
120
100
20
60
40
VCE = 3 V
0.6 0.2
TD62501PG/FG
TD62505PG/FG
TD62507PG/FG
Emitter grounded
Ta = 25°C
0
0 20
80
120
100
20
60
40
30 10
0.7
0.6
0.5
0.4
0.3
0.2
IB = 0.1 mA
TD62501PG/FG
TD62505PG/FG
TD62507PG/FG
Emitter grounded
Ta = 25°C
TD62501PG/FG
TD62505PG/FG
TD62507PG/FG
Emitter grounded
Ta = 25°C
0.2
0 0.4 0.8
1.0
0.8
0.6
0.4
0.6 0.2
VCE = 3 V
IC/IB = 25
0.001
0.1 3 100
1
0.3
0.03
0.01
30 1
0.1
TD62501PG/FG
TD62505PG/FG
TD62507PG/FG
Ta = 25°C
0.003
0.3 10
VCE (sat)
IC/IB = 10
10
0.1 3 100
10000
3000
300
100
30 1
1000
TD62501PG/FG
TD62505PG/FG
TD62507PG/FG
Ta = 25°C
30
0.3 10
hFE (VCE = 10 V)
TD62501~507PG/FG
2004-03-26
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TD62501PG/FG IIN – VIN
TD62502PG/FG IIN – VIN
TD62503PG/FG IIN – VIN
IC – VCE (sat)
Input voltage VIN (V) Input voltage VIN (V)
Input voltage VIN (V)
Output saturation voltage VCE (sat)
Input current IIN (mA)
Input current IIN (mA)
Input current IIN (mA)
Collector current IC (mA)
0
0 0.4 1.0
8
6
2
IOUT = 25 mA
4
Ta = 25°C
0.6 0.2
50
100
0.8
0
0 20 50
4
3
1
2
Ta = 25°C
IOUT = 25 to 100 mA
30 10 40
0
0 8 20
4
3
1
2
Ta = 25°C
IOUT = 25 to 100 mA
12 4 16
Input current IIN (mA)
Input voltage VIN (V)
TD62504PG/FG IIN – VIN
0
0 20 50
4
3
1
2
Ta = 25°C
IOUT = 25 to 100 mA
30 10 40
0
0 0.4 1.4
120
100
20
60
0.8 0.2 1.0
80
40
0.6 1.2
IIN = 500 µA
700 µA
1 mA 2 mA
Ta = 25°C
TD62501~507PG/FG
2004-03-26
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Package Dimensions
Weight: 1.11 g (typ.)
TD62501~507PG/FG
2004-03-26
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Package Dimensions
Weight: 0.16 g (typ.)
TD62501~507PG/FG
2004-03-26
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• The information contained herein is subject to change without notice.
• The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patent or patent rights of
TOSHIBA or others.
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc..
• The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer’s own risk.
• The products described in this document are subject to the foreign exchange and foreign trade laws.
• TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced
and sold, under any law and regulations.
030619EBA
RESTRICTIONS ON P RODUCT USE
About solderability, following conditions were confirmed
• Solderability
(1) Use of Sn-63Pb solder Bath
· solder bath temperature = 230°C
· dipping time = 5 seconds
· the number of times = once
· use of R-type flux
(2) Use of Sn-3.0Ag-0.5Cu solder Bath
· solder bath temperature = 245°C
· dipping time = 5 seconds
· the number of times = once
· use of R-type flux
