LM3046 Transistor Array General Description Features The LM3046 consists of five general purpose silicon NPN transistors on a common monolithic substrate. Two of the transistors are internally connected to form a differentially-connected pair. The transistors are well suited to a wide variety of applications in low power system in the DC through VHF range. They may be used as discrete transistors in conventional circuits however, in addition, they provide the very significant inherent integrated circuit advantages of close electrical and thermal matching. The LM3046 is supplied in a 14-lead molded small outline package. n Two matched pairs of transistors VBE matched 5 mV Input offset current 2 A max at IC = 1 mA n Five general purpose monolithic transistors n Operation from DC to 120 MHz n Wide operating current range n Low noise figure: 3.2 dB typ at 1 kHz Applications n General use in all types of signal processing systems operating anywhere in the frequency range from DC to VHF n Custom designed differential amplifiers n Temperature compensated amplifiers Schematic and Connection Diagram Small Outline Package DS007950-1 Top View Order Number LM3046M See NS Package Number M14A (c) 2000 National Semiconductor Corporation DS007950 www.national.com LM3046 Transistor Array July 1999 LM3046 Absolute Maximum Ratings (Note 1) If Military/Aerospace specified devices are required, please contact the National Semiconductor Sales Office/ Distributors for availability and specifications. (TA = 25C) LM3046 Each Transistor Total Package Units Power Dissipation: 300 750 mW TA = 25C 300 750 mW TA = 25C to 55C Derate at 6.67 mW/C TA > 55C mW TA = 25C to 75C mW/C TA > 75C 15 V Collector to Emitter Voltage, VCEO 20 V Collector to Base Voltage, VCBO 20 V Collector to Substrate Voltage, VCIO (Note 2) 5 V Emitter to Base Voltage, VEBO 50 mA Collector Current, IC Operating Temperature Range -40C to +85C Storage Temperature Range -65C to +85C Soldering Information Dual-In-Line Package Soldering (10 Sec.) 260C Small Outline Package Vapor Phase (60 Seconds) 215C Infrared (15 Seconds) 220C See AN-450 "Surface Mounting Methods and Their Effect on Product Reliability" for other methods of soldering surface mount devices. Electrical Characteristics (TA = 25C unless otherwise specified) Parameter Conditions Limits Min Typ 20 60 Max Units Collector to Base Breakdown Voltage (V(BR)CBO) IC = 10 A, IE = 0 Collector to Emitter Breakdown Voltage (V(BR)CEO) IC = 1 mA, IB = 0 15 24 V Collector to Substrate Breakdown IC = 10 A, ICI = 0 20 60 V Emitter to Base Breakdown Voltage (V(BR)EBO) IE 10 A, IC = 0 5 7 V Collector Cutoff Current (ICBO) VCB = 10V, IE = 0 Collector Cutoff Current (ICEO) VCE = 10V, IB = 0 Static Forward Current Transfer VCE = 3V V Voltage (V(BR)CIO) Ratio (Static Beta) (hFE) 0.002 IC = 10 mA IC = 1 mA IC = 10 A Input Offset Current for Matched VCE = 3V, IC = 1 mA 40 nA 0.5 A 2 A 100 40 100 54 0.3 Pair Q1 and Q2 |IO1 - IIO2| Base to Emitter Voltage (VBE) Magnitude of Input Offset Voltage for VCE = 3V IE = 1 mA 0.715 IE = 10 mA 0.800 V VCE = 3V, IC = 1 mA 0.45 5 mV Magnitude of Input Offset Voltage for Isolated Transistors |VBE3 - VBE4|, |VBE4 - VBE5|, |VBE5 - VBE3| VCE = 3V, IC = 1 mA 0.45 5 mV Temperature Coefficient of Base to Emitter Voltage VCE = 3V, IC = 1 mA -1.9 mV/C Collector to Emitter Saturation Voltage (VCE(SAT)) IB = 1 mA, IC = 10 mA 0.23 V Differential Pair |VBE1 - VBE2| www.national.com 2 LM3046 Electrical Characteristics (Continued) (TA = 25C unless otherwise specified) Parameter Temperature Coefficient of Input Offset Voltage Limits Conditions Min Typ VCE = 3V, IC = 1 mA Units Max 1.1 V/C Note 1: "Absolute Maximum Ratings" indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for which the device is functional, but do not guarantee specific performance limits. Note 2: The collector of each transistor is isolated from the substrate by an integral diode. The substrate (terminal 13) must be connected to the most negative point in the external circuit to maintain isolation between transistors and to provide for normal transistor action. Electrical Characteristics Parameter Conditions Low Frequency Noise Figure (NF) Min f = 1 kHz, VCE = 3V, Typ Max 3.25 Units dB IC = 100 A, RS = 1 k LOW FREQUENCY, SMALL SIGNAL EQUIVALENT CIRCUIT CHARACTERISTICS Forward Current Transfer Ratio (hfe) f = 1 kHz, VCE = 3V, 110 IC = 1 mA Short Circuit Input Impednace (hie) 3.5 k Open Circuit Output Impedance (hoe) 15.6 mho 1.8 x 10-4 Open Circuit Reverse Voltage Transfer Ratio (hre) ADMITTANCE CHARACTERISTICS Forward Transfer Admittance (Yfe) f = 1 MHz, VCE = 3V, 31 - j 1.5 Input Admittance (Yie) IC = 1 mA 0.3+J 0.04 Output Admittance (Yoe) 0.001+j 0.03 Reverse Transfer Admittance (Yre) See Curve Gain Bandwidth Product (fT) VCE = 3V, IC = 3 mA Emitter to Base Capacitance (CEB) VEB = 3V, IE = 0 0.6 pF Collector to Base Capacitance (CCB) VCB = 3V, IC = 0 0.58 pF Collector to Substrate Capacitance (CCI) VCS = 3V, IC = 0 2.8 pF 300 550 Typical Performance Characteristics Typical Collector To Base Cutoff Current vs Ambient Temperature for Each Transistor Typical Collector To Emitter Cutoff Current vs Ambient Temperature for Each Transistor Typical Static Forward Current-Transfer Ratio and Beta Ratio for Transistors Q1 and Q2 vs Emitter Current DS007950-8 DS007950-9 3 DS007950-10 www.national.com LM3046 Typical Performance Characteristics Typical Input Offset Current for Matched Transistor Pair Q1 Q2 vs Collector Current (Continued) Typical Static Base To Emitter Voltage Characteristic and Input Offset Voltage for Differential Pair and Paired Isolated Transistors vs Emitter Current Typical Base To Emitter Voltage Characteristic for Each Transistor vs Ambient Temperature DS007950-11 DS007950-13 DS007950-12 Typical Input Offset Voltage Characteristics for Differential Pair and Paired Isolated Transistors vs Ambient Temperature Typical Noise Figure vs Collector Current Typical Noise Figure vs Collector Current DS007950-16 DS007950-15 DS007950-14 Typical Noise Figure vs Collector Current Typical Normalized Forward Current Transfer Ratio, Short Circuit Input Impedance, Open Circuit Output Impedance, and Open Circuit Reverse Voltage Transfer Ratio vs Collector Current Typical Forward Transfer Admittance vs Frequency DS007950-17 DS007950-19 DS007950-18 www.national.com 4 Typical Input Admittance vs Frequency LM3046 Typical Performance Characteristics (Continued) Typical Output Admittance vs Frequency DS007950-20 Typical Reverse Transfer Admittance vs Frequency DS007950-21 DS007950-22 Typical Gain-Bandwidth Product vs Collector Current DS007950-23 5 www.national.com LM3046 Transistor Array Physical Dimensions inches (millimeters) unless otherwise noted Molded Small Outline Package (M) Order Number LM3046M NS Package Number M14A LIFE SUPPORT POLICY NATIONAL'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT AND GENERAL COUNSEL OF NATIONAL SEMICONDUCTOR CORPORATION. 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