LM3046
Transistor Array
General Description
The LM3046 consists of five general purpose silicon NPN
transistors on a common monolithic substrate. Two of the
transistors are internally connected to form a
differentially-connected pair. The transistors are well suited
to a wide variety of applications in low power system in the
DC through VHF range. They may be used as discrete tran-
sistors in conventional circuits however, in addition, they pro-
vide the very significant inherent integrated circuit advan-
tages of close electrical and thermal matching. The LM3046
is supplied in a 14-lead molded small outline package.
Features
nTwo matched pairs of transistors
V
BE
matched ±5mV
Input offset current 2 µA max at I
C
=1mA
nFive general purpose monolithic transistors
nOperation from DC to 120 MHz
nWide operating current range
nLow noise figure: 3.2 dB typ at 1 kHz
Applications
nGeneral use in all types of signal processing systems
operating anywhere in the frequency range from DC to
VHF
nCustom designed differential amplifiers
nTemperature compensated amplifiers
Schematic and Connection Diagram
Small Outline Package
DS007950-1
Top View
Order Number LM3046M
See NS Package Number M14A
July 1999
LM3046 Transistor Array
© 2000 National Semiconductor Corporation DS007950 www.national.com
Absolute Maximum Ratings (Note 1)
If Military/Aerospace specified devices are required, please contact the National Semiconductor Sales Office/
Distributors for availability and specifications. (T
A
= 25˚C)
LM3046
Each Total Units
Transistor Package
Power Dissipation:
T
A
= 25˚C 300 750 mW
T
A
= 25˚C to 55˚C 300 750 mW
T
A
>55˚C Derate at 6.67 mW/˚C
T
A
= 25˚C to 75˚C mW
T
A
>75˚C mW/˚C
Collector to Emitter Voltage, V
CEO
15 V
Collector to Base Voltage, V
CBO
20 V
Collector to Substrate Voltage, V
CIO
(Note 2) 20 V
Emitter to Base Voltage, V
EBO
5V
Collector Current, I
C
50 mA
Operating Temperature Range −40˚C to +85˚C
Storage Temperature Range −65˚C to +85˚C
Soldering Information
Dual-In-Line Package Soldering (10 Sec.) 260˚C
Small Outline Package
Vapor Phase (60 Seconds) 215˚C
Infrared (15 Seconds) 220˚C
SeeAN-450 “Surface Mounting Methods and Their Effect on Product Reliability” for other methods of soldering surface mount de-
vices.
Electrical Characteristics
(T
A
= 25˚C unless otherwise specified)
Parameter Conditions Limits Units
Min Typ Max
Collector to Base Breakdown Voltage (V
(BR)CBO
)I
C
= 10 µA, I
E
= 0 20 60 V
Collector to Emitter Breakdown Voltage (V
(BR)CEO
)I
C
= 1 mA, I
B
= 0 15 24 V
Collector to Substrate Breakdown I
C
= 10 µA, I
CI
= 0 20 60 V
Voltage (V
(BR)CIO
)
Emitter to Base Breakdown Voltage (V
(BR)EBO
)I
E
10 µA, I
C
=0 5 7 V
Collector Cutoff Current (I
CBO
)V
CB
= 10V, I
E
= 0 0.002 40 nA
Collector Cutoff Current (I
CEO
)V
CE
= 10V, I
B
= 0 0.5 µA
Static Forward Current Transfer V
CE
=3V I
C
= 10 mA 100
Ratio (Static Beta) (h
FE
)I
C
= 1 mA 40 100
I
C
=10µA 54
Input Offset Current for Matched V
CE
= 3V, I
C
= 1 mA 0.3 2 µA
Pair Q
1
and Q
2
|I
O1
−I
IO2
|
Base to Emitter Voltage (V
BE
)V
CE
=3V I
E
= 1 mA 0.715 V
I
E
= 10 mA 0.800
Magnitude of Input Offset Voltage for V
CE
= 3V, I
C
= 1 mA 0.45 5 mV
Differential Pair |V
BE1
−V
BE2
|
Magnitude of Input Offset Voltage for Isolated
Transistors |V
BE3
−V
BE4
|, |V
BE4
−V
BE5
|,
|V
BE5
−V
BE3
|
V
CE
= 3V, I
C
= 1 mA 0.45 5 mV
Temperature Coefficient of Base to
Emitter Voltage V
CE
= 3V, I
C
= 1 mA −1.9 mV/˚C
Collector to Emitter Saturation Voltage (V
CE(SAT)
)I
B
= 1 mA, I
C
= 10 mA 0.23 V
LM3046
www.national.com 2
Electrical Characteristics (Continued)
(T
A
= 25˚C unless otherwise specified)
Parameter Conditions Limits Units
Min Typ Max
Temperature Coefficient of
Input Offset Voltage V
CE
= 3V, I
C
= 1 mA 1.1 µV/˚C
Note 1: “Absolute Maximum Ratings” indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for which the device is
functional, but do not guarantee specific performance limits.
Note 2: The collector of each transistor is isolated from the substrate by an integral diode. The substrate (terminal 13) must be connected to the most negative point
in the external circuit to maintain isolation between transistors and to provide for normal transistor action.
Electrical Characteristics
Parameter Conditions Min Typ Max Units
Low Frequency Noise Figure (NF) f = 1 kHz, V
CE
= 3V, 3.25 dB
I
C
= 100 µA, R
S
=1kΩ
LOW FREQUENCY, SMALL SIGNAL EQUIVALENT CIRCUIT CHARACTERISTICS
Forward Current Transfer Ratio (h
fe
) f = 1 kHz, V
CE
= 3V, 110
I
C
=1mA
Short Circuit Input Impednace (h
ie
) 3.5 kΩ
Open Circuit Output Impedance (h
oe
) 15.6 µmho
Open Circuit Reverse Voltage Transfer Ratio
(h
re
)1.8x10
−4
ADMITTANCE CHARACTERISTICS
Forward Transfer Admittance (Y
fe
) f = 1 MHz, V
CE
= 3V, 31 − j 1.5
Input Admittance (Y
ie
)I
C
= 1 mA 0.3+J 0.04
Output Admittance (Y
oe
) 0.001+j 0.03
Reverse Transfer Admittance (Y
re
) See Curve
Gain Bandwidth Product (f
T
)V
CE
= 3V, I
C
= 3 mA 300 550
Emitter to Base Capacitance (C
EB
)V
EB
= 3V, I
E
= 0 0.6 pF
Collector to Base Capacitance (C
CB
)V
CB
= 3V, I
C
= 0 0.58 pF
Collector to Substrate Capacitance (C
CI
)V
CS
= 3V, I
C
= 0 2.8 pF
Typical Performance Characteristics
Typical Collector To Base
Cutoff Current vs Ambient
Temperature for Each
Transistor
DS007950-8
Typical Collector To Emitter
Cutoff Current vs Ambient
Temperature for Each
Transistor
DS007950-9
Typical Static Forward
Current-Transfer Ratio and
Beta Ratio for Transistors Q
1
and Q
2
vs Emitter Current
DS007950-10
LM3046
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Typical Performance Characteristics (Continued)
Typical Input Offset Current
for Matched Transistor Pair
Q
1
Q
2
vs Collector Current
DS007950-11
Typical Static Base To Emitter
Voltage Characteristic and Input
Offset Voltage for Differential
Pair and Paired Isolated
Transistors vs Emitter Current
DS007950-12
Typical Base To Emitter
Voltage Characteristic for
Each Transistor vs Ambient
Temperature
DS007950-13
Typical Input Offset Voltage
Characteristics for Differential
Pair and Paired Isolated
Transistors vs Ambient
Temperature
DS007950-14
Typical Noise Figure vs
Collector Current
DS007950-15
Typical Noise Figure vs
Collector Current
DS007950-16
Typical Noise Figure vs
Collector Current
DS007950-17
Typical Normalized Forward
Current Transfer Ratio, Short
Circuit Input Impedance,
Open Circuit Output Impedance,
and Open Circuit Reverse
Voltage Transfer Ratio vs
Collector Current
DS007950-18
Typical Forward Transfer
Admittance vs Frequency
DS007950-19
LM3046
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Typical Performance Characteristics (Continued)
Typical Input Admittance
vs Frequency
DS007950-20
Typical Output Admittance
vs Frequency
DS007950-21
Typical Reverse Transfer
Admittance vs Frequency
DS007950-22
Typical Gain-Bandwidth
Product vs Collector Current
DS007950-23
LM3046
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Physical Dimensions inches (millimeters) unless otherwise noted
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COUNSEL OF NATIONAL SEMICONDUCTOR CORPORATION. As used herein:
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into the body, or (b) support or sustain life, and
whose failure to perform when properly used in
accordance with instructions for use provided in the
labeling, can be reasonably expected to result in a
significant injury to the user.
2. A critical component is any component of a life
support device or system whose failure to perform
can be reasonably expected to cause the failure of
the life support device or system, or to affect its
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www.national.com
Molded Small Outline Package (M)
Order Number LM3046M
NS Package Number M14A
LM3046 Transistor Array
National does not assume any responsibility for use of any circuitry described, no circuit patent licenses are implied and National reserves the right at any time without notice to change said circuitry and specifications.
