© 2013 IXYS CORPORATION, All Rights Reserved
Symbol Test Conditions Maximum Ratings
VDSS TJ= 25°C to 150°C - 600 V
VDGR TJ= 25°C to 150°C, RGS = 1MΩ- 600 V
VGSS Continuous ±20 V
VGSM Transient ±30 V
ID25 TC= 25°C - 10 A
IDM TC= 25°C, Pulse Width Limited by TJM - 48 A
IATC= 25°C - 16 A
EAS TC= 25°C 2.5 J
dV/dt IS≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C 10 V/ns
PDTC= 25°C 190 W
TJ-55 ... +150 °C
TJM 150 °C
Tstg -55 ... +150 °C
TL1.6mm (0.062 in.) from Case for 10s 300 °C
TSOLD Plastic Body for 10s 260 °C
VISOL 50/60 Hz, 1 Minute 2500 V~
FCMounting Force 20..120/4.5..27 N/lb.
Weight 5 g
Symbol Test Conditions Characteristic Values
(TJ = 25°C, Unless Otherwise Specified) Min. Typ. Max.
BVDSS VGS = 0V, ID = - 250μA - 600 V
VGS(th) VDS = VGS, ID = - 250μA - 2.0 - 4.0 V
IGSS VGS = ±20V, VDS = 0V ±100 nA
IDSS VDS = VDSS, VGS = 0V - 25 μA
TJ = 125°C - 200 μA
RDS(on) VGS = -10V, ID = - 8A, Note 1 790 mΩ
PolarPTM
Power MOSFET
P-Channel Enhancement Mode
Avalanche Rated
IXTR16P60P VDSS = - 600V
ID25 = - 10A
RDS(on) ≤≤
≤≤
≤ 790mΩΩ
ΩΩ
Ω
DS99989B(01/13)
Features
zSilicon Chip on Direct-Copper Bond
(DCB) Substrate
zIsolated Mounting Surface
z2500V~ Electrical Isolation
z Avalanche Rated
zFast Intrinsic Rectifier
z Low RDS(ON) and QG
Advantages
zEasy to Mount
zSpace Savings
zHigh Power Density
Applications
zHigh-Side Switches
zPush-Pull Amplifiers
zDC Choppers
zAutomatic Test Equipment
zLoad-Switch Applications
zFuel Injection Systems
G = Gate D = Drain
S = Source
ISOPLUS247
E153432
G
S
DIsolated Tab
IXTR16P60P
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2
by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537
Note 1: Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.
Symbol Test Conditions Characteristic Values
(TJ = 25°C, Unless Otherwise Specified) Min. Typ. Max.
gfs VDS = -10V, ID = - 8A, Note 1 11 18 S
Ciss 5120 pF
Coss VGS = 0V, VDS = - 25V, f = 1MHz 445 pF
Crss 60 pF
td(on) 29 ns
tr 25 ns
td(off) 60 ns
tf 38 ns
Qg(on) 92 nC
Qgs VGS = -10V, VDS = 0.5 • VDSS, ID = - 8A 27 nC
Qgd 23 nC
RthJC 0.66 °C/W
RthCS 0.15 °C/W
Source-Drain Diode
Symbol Test Conditions Characteristic Values
(TJ = 25°C, Unless Otherwise Specified) Min. Typ. Max.
ISVGS = 0V - 16 A
ISM Repetitive, Pulse Width Limited by TJM - 64 A
VSD IF = - 8A, VGS = 0V, Note 1 - 2.8 V
trr 440 ns
QRM 7.4 μC
IRM - 33.6 A
IF = - 8A, -di/dt = -150A/μs
VR = -100V, VGS = 0V
Resistive Switching Times
VGS = -10V, VDS = 0.5 • VDSS, ID = - 8A
RG = 3Ω (External)
1 = Gate
2,4 = Drain
3 = Source
ISOPLUS247 (IXTR) Outline
© 2013 IXYS CORPORATION, All Rights Reserved
IXTR16P60P
Fi g . 1. Ou tp u t C h ar acter i sti cs @ T
J
= 25ºC
-16
-14
-12
-10
-8
-6
-4
-2
0-11-10-9-8-7-6-5-4-3-2-10
V
DS
- Vo lts
I
D
- Ampe res
V
GS
= - 10V
- 7V
- 5
V
- 6
V
Fig. 2. Extended Output Characteristics @ T
J
= 25ºC
-38
-34
-30
-26
-22
-18
-14
-10
-6
-2
-30-25-20-15-10-50
V
DS
- Vo lts
I
D
- Amperes
V
GS
= - 10V
- 7V
- 6
V
- 5
V
Fi g . 3. Ou tp u t C h ar acter i sti cs @ T
J
= 125ºC
-16
-14
-12
-10
-8
-6
-4
-2
0-20-15-10-50
V
DS
- Vo lts
I
D
- Amper es
V
GS
= - 10V
- 7V
- 6
V
- 5
V
Fig. 4. R
DS(on)
Normalized to I
D
= - 8A Value vs.
Junction Tem perature
0.4
0.8
1.2
1.6
2.0
2.4
-50 -25 0 25 50 75 100 125 150
T
J
- Degrees Centigrade
R
DS(on)
- Normali zed
V
GS
= - 10V
I
D
= -16
A
I
D
= - 8
A
Fig. 5. R
DS(on)
Norm alized to I
D
= - 8A Value vs.
Drain Current
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
-35-30-25-20-15-10-50
I
D
- A mperes
R
DS(on)
- Normalized
V
GS
= - 10V
T
J
= 25ºC
T
J
= 125ºC
Fig. 6. Maximum D r ain C u rren t vs .
Cas e Temp er atu r e
-11
-9
-7
-5
-3
-1
-50 -25 0 25 50 75 100 125 150
T
C
- Degrees Centigrade
I
D
- Amperes
IXTR16P60P
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
Fig. 7. Input Admittance
-20
-18
-16
-14
-12
-10
-8
-6
-4
-2
0-6.0-5.5-5.0-4.5-4.0-3.5
V
GS
- Vo lts
I
D
- Amperes
T
J
= 125ºC
25ºC
- 40ºC
Fig. 8. Transconductance
0
4
8
12
16
20
24
28
32
-20-15-10-50
I
D
- Amperes
g
f s
- Siemens
T
J
= - 40ºC
125ºC
25ºC
Fig. 9. Forward Voltage Drop of Intrinsic Diode
-50
-45
-40
-35
-30
-25
-20
-15
-10
-5
0-3.5-3.0-2.5-2.0-1.5-1.0-0.5
V
SD
- Vo lts
I
S
- Ampere s
T
J
= 125ºC
T
J
= 25ºC
Fi g . 10. Gate C h ar ge
-10
-9
-8
-7
-6
-5
-4
-3
-2
-1
00 102030405060708090100
Q
G
- NanoCoulom bs
V
GS
- Volt s
V
DS
= - 300V
I
D
= - 8A
I
G
= -1mA
Fig. 11. Capacitance
10
100
1,000
10,000
-40-35-30-25-20-15-10-50
V
DS
- Vo lts
Capacitance - PicoFarads
f
= 1 MHz
Ciss
Crss
Coss
Fig. 12. Forward-Bias Safe Operating Area
0.1
1
10
100
10 100 1000
V
DS
- V olts
I
D
- Amperes
T
J
= 150ºC
T
C
= 25ºC
Single P ulse
1ms
100µs
R
DS(on)
Limit
DC, 100ms, 10 ms
-
---
-
-
-
© 2013 IXYS CORPORATION, All Rights Reserved
IXTR16P60P
IXYS REF: T_16P60P (B7) 6-03-08
Fig. 13. Maximum T r an sient Th e r mal Imped an ce
0.001
0.01
0.1
1
0.00001 0.0001 0.001 0.01 0.1 1 10
Pulse Width - Seconds
Z
(th)JC
- º C / W
