RL251 - RL257 SILICON RECTIFIER DIODES
PRV : 50 - 1000 Volts
Io : 2.5 Am
eres
FEATURES :
* High current capability
* High surge current capability
* High reliability
* Low reverse current
* Low forward voltage drop
* Pb / RoHS Free
MECHANICAL DATA
* Case : D2A Molded plastic
* Epoxy : UL94V-O rate flame retardant
* Lead : Axial lead solderable per MIL-STD-202,
Method 208 guaranteed
* Polarity : Color band denotes cathode end
* Mounting position : Any
* Weight : 0.645 gram
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratin
at 25 °C ambient temperature unless otherwise specified.
SYMBOL RL251 RL252 RL253 RL254 RL255 RL256 RL257 UNIT
Maximum Recurrent Peak Reverse Voltage VRRM 50 100 200 400 600 800 1000 V
Maximum RMS Voltage VRMS 35 70 140 280 420 560 700 V
Maximum DC Blocking Voltage VDC 50 100 200 400 600 800 1000 V
Maximum Average Forward Current at Ta = 75 °C IF(AV) A
Peak Forward Surge Current
8.3ms Single half sine wave Superimposed
on rated load (JEDEC Method)
Maximum Forward Voltage at IF = 2.5 A VF1.1 V
Maximum DC Reverse Current Ta = 25 °C IR5μA
at rated DC Blocking Voltage Ta = 100 °C IR(H) 50 μA
Typical Junction Capacitance (Note 1) CJ35 pF
Typical Thermal Resistance RӨJA 35 °C/W
Operation Junction and Storage Temperature Range TJ, TSTG - 65 to + 175 °C
Note :
(1) Measured at 1.0 MHz and applied reverse voltage of 4.0 VDC
Page 1 of 2 Rev. 00 : June 20, 2007
RATING
A
2.5
IFSM 150
D2A
0.040 (1.02)
0.0385 (0.98)
1.00 (25.4)
MIN.
0.161 (4.1)
0.154 (3.9)
0.284 (7.2)
0.268 (6.8)
1.00 (25.4)
MIN.
Dimensions in inches and ( millimeters )
Certificate TH97/10561QM Certificate TW00/17276EM