2N6041 - ON Semiconductor

1

Motorola Bipolar Power Transistor Device Data

 ! "#

!$ 

  !

. . . designed for general–purpose amplifier and low–speed switching applications.

•High DC Current Gain —

hFE = 2500 (Typ) @ IC = 4.0 Adc

•Collector–Emitter Sustaining Voltage — @ 100 mAdc —

VCEO(sus) = 60 Vdc (Min) — 2N6040, 2N6043

VCEO(sus) = 80 Vdc (Min) — 2N6041, 2N6044

VCEO(sus) = 100 Vdc (Min) — 2N6042, 2N6045

•Low Collector–Emitter Saturation Voltage —

VCE(sat) = 2.0 Vdc (Max) @ IC = 4.0 Adc — 2N6040,41, 2N6043,44

VCE(sat) = 2.0 Vdc (Max) @ IC = 3.0 Adc — 2N6042, 2N6045

•Monolithic Construction with Built–In Base–Emitter Shunt Resistors

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

MAXIMUM RATINGS (1)

ÎÎÎÎÎÎÎÎÎÎÎ

Rating

ÎÎÎ

Symbol

ÎÎÎÎ

2N6040

2N6043

ÎÎÎ

2N6041

2N6044

ÎÎÎÎ

2N6042

2N6045

ÎÎÎ

Unit

ÎÎÎÎÎÎÎÎÎÎÎ

Collector–Emitter Voltage

ÎÎÎ

VCEO

ÎÎÎÎ

60

ÎÎÎ

80

ÎÎÎÎ

100

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎ

Collector–Base Voltage

ÎÎÎ

VCB

ÎÎÎÎ

60

ÎÎÎ

80

ÎÎÎÎ

100

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎ

Emitter–Base Voltage

ÎÎÎ

VEB

ÎÎÎÎÎÎÎÎÎ

5.0

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎ

Collector Current — Continuous

Peak

ÎÎÎ

IC

ÎÎÎÎÎÎÎÎÎ

8.0

16

ÎÎÎ

Adc

ÎÎÎÎÎÎÎÎÎÎÎ

Base Current

ÎÎÎ

IB

ÎÎÎÎÎÎÎÎÎ

120

ÎÎÎ

mAdc

ÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎ

Total Power Dissipation @ TC = 25

_

C

Derate above 25

_

C

ÎÎÎ

Î

ÎÎÎ

PD

ÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎ

75

0.60

ÎÎÎ

Î

ÎÎÎ

Watts

W/

_

C

ÎÎÎÎÎÎÎÎÎÎÎ

Operating and Storage Junction,

Temperature Range

ÎÎÎ

TJ, Tstg

ÎÎÎÎÎÎÎÎÎ

–65 to +150

ÎÎÎ

_

C

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

THERMAL CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎ

Characteristic

ÎÎÎÎÎ

Symbol

ÎÎÎÎÎÎ

Max

ÎÎÎ

Unit

ÎÎÎÎÎÎÎÎÎÎÎÎ

Thermal Resistance, Junction to Case

ÎÎÎÎÎ

θJC

ÎÎÎÎÎÎ

1.67

ÎÎÎ

_

C/W

ÎÎÎÎÎÎÎÎÎÎÎÎ

Thermal Resistance, Junction to Ambient

ÎÎÎÎÎ

θJA

ÎÎÎÎÎÎ

57

ÎÎÎ

_

C/W

(1) Indicates JEDEC Registered Data.

80

00 20 40 60 80 100 120 160

Figure 1. Power Derating

T, TEMPERATURE (

°

C)

PD, POWER DISSIPATION (W ATTS)

40

20

60

140

TC

4.0

0

2.0

1.0

3.0

TA

TC

Preferred devices are Motorola recommended choices for future use and best overall value.



SEMICONDUCTOR TECHNICAL DATA Order this document

by 2N6040/D

 Motorola, Inc. 1997



!"





!"



*Motorola Preferred Device

DARLINGTON

8 AMPERE

COMPLEMENTARY

SILICON

POWER TRANSISTORS

60–80–100 VOLTS

75 WATTS



CASE 221A–06

TO–220AB





REV 1

     

2 Motorola Bipolar Power Transistor Device Data

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

*ELECTRICAL CHARACTERISTICS (TC = 25

_

C unless otherwise noted)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Characteristic

ÎÎÎÎ

Symbol

ÎÎÎÎ

Min

ÎÎÎÎ

Max

ÎÎÎ

Unit

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

OFF CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector–Emitter Sustaining V oltage

(IC = 100 mAdc, IB = 0) 2N6040, 2N6043

2N6041, 2N6044

2N6042, 2N6045

ÎÎÎÎ

ÎÎÎ

Î

ÎÎÎ

Î

ÎÎÎÎ

VCEO(sus)

ÎÎÎÎ

Î

ÎÎ

Î

ÎÎ

Î

ÎÎÎÎ

60

80

100

ÎÎÎÎ

Î

ÎÎ

Î

ÎÎ

Î

ÎÎÎÎ

—

ÎÎÎ

ÎÎ

Î

ÎÎ

Î

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector Cutoff Current

(VCE = 60 Vdc, IB = 0) 2N6040, 2N6043

(VCE = 80 Vdc, IB = 0) 2N6041, 2N6044

(VCE = 100 Vdc, IB = 0) 2N6042, 2N6045

ÎÎÎÎ

ÎÎÎ

Î

ÎÎÎ

Î

ÎÎÎÎ

ICEO

ÎÎÎÎ

Î

ÎÎ

Î

ÎÎ

Î

ÎÎÎÎ

—

ÎÎÎÎ

Î

ÎÎ

Î

ÎÎ

Î

ÎÎÎÎ

20

ÎÎÎ

ÎÎ

Î

ÎÎ

Î

ÎÎÎ

µA

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector Cutoff Current

(VCE = 60 Vdc, VBE(off) = 1.5 Vdc) 2N6040, 2N6043

(VCE = 80 Vdc, VBE(off) = 1.5 Vdc) 2N6041, 2N6044

(VCE = 100 Vdc, VBE(off) = 1.5 Vdc) 2N6042, 2N6045

(VCE = 60 Vdc, VBE(off) = 1.5 Vdc, TC = 150

_

C) 2N6040, 2N6043

(VCE = 80 Vdc, VBE(off) = 1.5 Vdc, TC = 150

_

C) 2N6041, 2N6044

(VCE = 100 Vdc, VBE(off) = 1.5 Vdc, TC = 150

_

C) 2N6042, 2N6045

ÎÎÎÎ

ÎÎÎ

Î

ÎÎÎ

Î

ÎÎÎ

Î

ÎÎÎ

Î

ÎÎÎÎ

ICEX

ÎÎÎÎ

Î

ÎÎ

Î

ÎÎ

Î

ÎÎ

Î

ÎÎ

Î

ÎÎÎÎ

—

ÎÎÎÎ

Î

ÎÎ

Î

ÎÎ

Î

ÎÎ

Î

ÎÎ

Î

ÎÎÎÎ

20

200

ÎÎÎ

ÎÎ

Î

ÎÎ

Î

ÎÎ

Î

ÎÎ

Î

ÎÎÎ

µA

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector Cutoff Current

(VCB = 60 Vdc, IE = 0) 2N6040, 2N6043

(VCB = 80 Vdc, IE = 0) 2N6041, 2N6044

(VCB = 100 Vdc, IE = 0) 2N6042, 2N6045

ÎÎÎÎ

ÎÎÎ

Î

ÎÎÎ

Î

ÎÎÎÎ

ICBO

ÎÎÎÎ

Î

ÎÎ

Î

ÎÎ

Î

ÎÎÎÎ

—

ÎÎÎÎ

Î

ÎÎ

Î

ÎÎ

Î

ÎÎÎÎ

20

ÎÎÎ

ÎÎ

Î

ÎÎ

Î

ÎÎÎ

µA

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Emitter Cutof f Current (VBE = 5.0 Vdc, IC = 0)

ÎÎÎÎ

IEBO

ÎÎÎÎ

—

ÎÎÎÎ

2.0

ÎÎÎ

mAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ON CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

DC Current Gain

(IC = 4.0 Adc, VCE = 4.0 Vdc) 2N6040, 41, 2N6043, 44

(IC = 3.0 Adc, VCE = 4.0 Vdc) 2N6042, 2N6045

(IC = 8.0 Adc, VCE = 4.0 Vdc) All Types

ÎÎÎÎ

ÎÎÎ

Î

ÎÎÎ

Î

ÎÎÎÎ

hFE

ÎÎÎÎ

Î

ÎÎ

Î

ÎÎ

Î

ÎÎÎÎ

1000

100

ÎÎÎÎ

Î

ÎÎ

Î

ÎÎ

Î

ÎÎÎÎ

20.000

20,000

—

ÎÎÎ

ÎÎ

Î

ÎÎ

Î

ÎÎÎ

—

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector–Emitter Saturation V oltage

(IC = 4.0 Adc, IB = 16 mAdc) 2N6040, 41, 2N6043, 44

(IC = 3.0 Adc, IB = 12 mAdc) 2N6042, 2N6045

(IC = 8.0 Adc, IB = 80 Adc) All Types

ÎÎÎÎ

ÎÎÎ

Î

ÎÎÎ

Î

ÎÎÎÎ

VCE(sat)

ÎÎÎÎ

Î

ÎÎ

Î

ÎÎ

Î

ÎÎÎÎ

—

ÎÎÎÎ

Î

ÎÎ

Î

ÎÎ

Î

ÎÎÎÎ

2.0

4.0

ÎÎÎ

ÎÎ

Î

ÎÎ

Î

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Base–Emitter Saturation Voltage (IC = 8.0 Adc, IB = 80 mAdc)

ÎÎÎÎ

VBE(sat)

ÎÎÎÎ

—

ÎÎÎÎ

4.5

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Base–Emitter On Voltage (IC = 4.0 Adc, VCE = 4.0 Vdc)

ÎÎÎÎ

VBE(on)

ÎÎÎÎ

—

ÎÎÎÎ

2.8

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

DYNAMIC CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Small Signal Current Gain (IC = 3.0 Adc, VCE = 4.0 Vdc, f = 1.0 MHz)

ÎÎÎÎ

|hfe|

ÎÎÎÎ

4.0

ÎÎÎÎ

—

ÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Output Capacitance 2N6040/2N6042

(VCB = 10 Vdc, IE = 0, f = 0.1 MHz) 2N6043/2N6045

ÎÎÎÎ

Cob

ÎÎÎÎ

—

ÎÎÎÎ

300

200

ÎÎÎ

pF

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Small–Signal Current Gain (IC = 3.0 Adc, VCE = 4.0 Vdc, f = 1.0 kHz)

ÎÎÎÎ

hfe

ÎÎÎÎ

300

ÎÎÎÎ

—

ÎÎÎ

—

*Indicates JEDEC Registered Data.

Figure 2. Switching Times Equivalent Circuit

5.0

0.1

Figure 3. Switching Times

IC, COLLECTOR CURRENT (AMP)

t, TIME ( s)

µ

2.0

1.0

0.5

0.05 0.2 0.3 0.5 0.7 1.0 2.0 3.0 10

0.3

0.7

tf

tr

ts

td @ VBE(off) = 0 V

V2

approx

+8.0 V

V1

approx

–12 V

tr, tf

≤

10 ns

DUTY CYCLE = 1.0%

25

µ

s

0

RB

51 D1

+4.0 V

VCC

–30 V

RC

TUT

≈

8.0 k

≈

120

SCOPE

for td and tr, D1 is disconnected

and V2 = 0

For NPN test circuit reverse all polarities and D1.

RB & RC VARIED T O OBTAIN DESIRED CURRENT LEVELS

D1 MUST BE FAST RECOVERY TYPE, eg:

1N5825 USED ABOVE IB

≈

100 mA

MSD6100 USED BELOW IB

≈

100 mA

3.0

0.2

0.1

0.07

5.0 7.0

VCC = 30 V

IC/IB = 250

IB1 = IB2

TJ = 25

°

CPNP

NPN

     

3

Motorola Bipolar Power Transistor Device Data

Figure 4. Thermal Response

t, TIME OR PULSE WIDTH (ms)

1.0

0.01

0.5

0.2

0.1

0.05

0.02

r(t), EFFECTIVE TRANSIENT

THERMAL RESISTANCE (NORMALIZED)

0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 1000500

θ

JC(t) = r(t)

θ

JC

θ

JC = 1.67

°

C/W

D CURVES APPLY FOR POWER

PULSE TRAIN SHOWN

READ TIME AT t1

TJ(pk) – TC = P(pk)

θ

JC(t)

P(pk)

t1t2

DUTY CYCLE, D = t1/t2

D = 0.5

0.2

0.05

0.02

0.1

0.7

0.3

0.07

0.03

0.02 0.03 0.3 3.0 30 300

SINGLE PULSE 0.01

20

1.0

Figure 5. Active–Region Safe Operating Area

VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)

10

5.0

2.0

1.0

0.02 2.0 3.0 7.0 50 100

BONDING WIRE LIMITED

THERMALLY LIMITED @ TC = 25

°

C

(SINGLE PULSE)

SECOND BREAKDOWN LIMITED

70

IC, COLLECTOR CURRENT (AMP)

TJ = 150

°

Cdc

1.0 ms

100

µ

s

0.5

0.2

0.05

5.0

2N6040, 2N6043

2N6041, 2N6044

2N6045

0.1

10 20 30

500

µ

s

5.0 ms

CURVES APPLY BELOW RA TED VCEO

There are two limitations on the power handling ability of a

transistor: average junction temperature and second break-

down. Safe operating area curves indicate IC – VCE limits of

the transistor that must be observed for reliable operation;

i.e., the transistor must not be subjected to greater dissipa-

tion than the curves indicate.

The data of Figure 5 is based on TJ(pk) = 150

_

C; TC is

variable depending on conditions. Second breakdown pulse

limits are valid for duty cycles to 10% provided TJ(pk)

< 150

_

C. TJ(pk) may be calculated from the data in Figure 4.

At high case temperatures, thermal limitations will reduce the

power that can be handled to values less than the limitations

imposed by second breakdown.

300

Figure 6. Small–Signal Current Gain

VR, REVERSE VOLTAGE (VOL TS)

30 0.5 1.0 2.0 1005.00.1 0.2

C, CAPACITANCE (pF)

200

70

50

TJ = 25

°

C

Cib

100 Cob

PNP

NPN

10,000

1.0

Figure 7. Capacitance

f, FREQUENCY (kHz)

10 2.0 5.0 20 50 100010010 10 20

hfe, SMALL–SIGNAL CURRENT GAIN

5000

3000

2000

1000

500

300

200

100

50

30

20

200 500

PNP

NPN

TC = 25

°

C

VCE = 4.0 Vdc

IC = 3.0 Adc

50

     

4 Motorola Bipolar Power Transistor Device Data

VCE, COLLECTOR–EMITTER VOLTAGE (VOL TS)

20,000

0.1

Figure 8. DC Current Gain

IC, COLLECTOR CURRENT (AMP)

200 0.2 0.3 0.5 1.0 2.0 10

hFE, DC CURRENT GAIN

0.7 7.0

PNP

2N6040, 2N6041, 2N6042 NPN

2N6043, 2N6044, 2N6045

Figure 9. Collector Saturation Region

3.0

0.3 IB, BASE CURRENT (mA)

1.0 0.5 1.0 2.0 10 30

1.8

IC = 2.0 A

TJ = 25

°

C

4.0 A

2.2

2.6

0.7 5.0

3.0

0.1

IC, COLLECTOR CURRENT (AMP)

0.2 0.3 0.5 0.7 1.0 3.0 10

2.5

2.0

1.5

1.0

0.5

TJ = 25

°

C

VBE(sat) @ IC/IB = 250

VCE(sat) @ IC/IB = 250

V, VOLTAGE (VOLTS)

Figure 10. “On” Voltages

VBE @ VCE = 4.0 V

2.0

10,000

TJ = 150

°

C

25

°

C

–55

°

C

20

IC, COLLECTOR CURRENT (AMP)

hFE, DC CURRENT GAIN

VCE = 4.0 V

TJ = 150

°

C

25

°

C

–55

°

C

1.4

6.0 A

IB, BASE CURRENT (mA)

TJ = 25

°

C

IC, COLLECTOR CURRENT (AMP)

V, VOLTAGE (VOLTS)

7000

5000

3000

2000

1000

700

500

300

3.0 5.0

VCE = 4.0 V 20,000

0.1

200 0.2 0.3 0.5 1.0 2.0 100.7 7.0

10,000

7000

5000

3000

2000

1000

700

500

300

3.0 5.0

3.0 7.0

IC = 2.0 A 4.0 A 6.0 A

3.0

0.3

1.0 0.5 1.0 2.0 10 30

1.8

2.2

2.6

0.7 5.0 20

1.4

3.0 7.0

7.05.0

3.0

0.1 0.2 0.3 0.5 0.7 1.0 3.0 10

2.5

2.0

1.5

1.0

0.5 2.0 7.05.0

TJ = 25

°

C

VBE(sat) @ IC/IB = 250

VCE(sat) @ IC/IB = 250

VBE @ VCE = 4.0 V

     

5

Motorola Bipolar Power Transistor Device Data

PACKAGE DIMENSIONS

CASE 221A–06

TO–220AB

ISSUE Y

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. DIMENSION Z DEFINES A ZONE WHERE ALL

BODY AND LEAD IRREGULARITIES ARE

ALLOWED.

STYLE 1:

PIN 1. BASE

2. COLLECTOR

3. EMITTER

4. COLLECTOR

DIM MIN MAX MIN MAX

MILLIMETERSINCHES

A0.570 0.620 14.48 15.75

B0.380 0.405 9.66 10.28

C0.160 0.190 4.07 4.82

D0.025 0.035 0.64 0.88

F0.142 0.147 3.61 3.73

G0.095 0.105 2.42 2.66

H0.110 0.155 2.80 3.93

J0.018 0.025 0.46 0.64

K0.500 0.562 12.70 14.27

L0.045 0.060 1.15 1.52

N0.190 0.210 4.83 5.33

Q0.100 0.120 2.54 3.04

R0.080 0.110 2.04 2.79

S0.045 0.055 1.15 1.39

T0.235 0.255 5.97 6.47

U0.000 0.050 0.00 1.27

V0.045 ––– 1.15 –––

Z––– 0.080 ––– 2.04

B

Q

H

Z

L

V

G

N

A

K

F

123

4

D

SEATING

PLANE

–T–

C

S

T

U

R

J

     

6 Motorola Bipolar Power Transistor Device Data

Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding

the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and

specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters which may be provided in Motorola

data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals”

must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of

others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other

applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury

or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola

and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees

arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that

Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal

Opportunity/Af firmative Action Employer.

Mfax is a trademark of Motorola, Inc.

How to reach us:

USA/EUROPE/Locations Not Listed: Motorola Literature Distribution; JAPAN: Nippon Motorola Ltd.; Tatsumi–SPD–JLDC, 6F Seibu–Butsuryu–Center,

P.O. Box 5405, Denver, Colorado 80217. 303–675–2140 or 1–800–441–2447 3–14–2 Tatsumi Koto–Ku, Tokyo 135, Japan. 81–3–3521–8315

Mfax: RMF AX0@email.sps.mot.com – TOUCHT ONE 602–244–6609 ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park,

INTERNET: http://www.mot.com/SPS/ 51 Tin g Kok Road, Tai Po, N.T., Hong Kong. 852–26629298

2N6040/D

◊