Semiconductor Group 1 10.94
Type Ordering Code Pin Configuration Marking Package1)
(tape and reel) 1 2 3
BAS 70-04W
BAS 70-05W
BAS 70-06W
Q62702-A1068
Q62702-A1069
Q62702-A1070
A1
A1
C1
C2
A2
C2
C1/A2
C1/C2
A1/A2
74s
75s
76s
SOT-323
Maximum Ratings
Parameter Symbol Values Unit
Reverse voltage VR70 V
Forward current IF70 mA
Surge forward current, t≤ 10 ms IFSM 100 mA
Total power dissipation TS≤ 91 °CPtot 250 mW
Operating temperature range Top – 55 … + 150 °C
Storage temperature range Tstg – 55 … + 150 °C
Thermal Resistance
Junction-ambient1) Rth JA ≤455 K/W
Junction-soldering point Rth JS ≤235 K/W
1) Package mounted on an epoxy pcb 40 mm x 40 mm x 1.5 mm/1cm2Cu.
Silicon Schottky Diode BAS 70W
●General-purpose diodes for
high-speed switching
●Circuit protection
●Voltage clamping
●High-level detection and mixing
Semiconductor Group 2
BAS 70W
Electrical Characteristics
at TA = 25 °C, unless otherwise specified.
Parameter Symbol Value Unit
min. typ. max.
DC Characteristics
Breakdown voltage
I(BR) =10µAV
(BR) 70 – – V
Forward voltage
IF=1mA
I
F=10mA
I
F=15mA
V
F300
600
750
375
705
880
410
750
1000
mV
Reverse current
VR=50V
V
R=70V
I
R–
––
–0.1
10
µA
Diode capacitance
VR=0V,f= 1 MHz CT– 1.5 2 pF
Charge carrier life time
IF=25mA τ– – 100 ps
Differential forward resistance
IF=10mA,f=10kHz r
f–34–Ω
Series inductance LS–2–nH
Semiconductor Group 3
BAS 70W
Forward current IF=f(VF)
Diode capacitance CT=f(VR)
Reverse current IR=f(VR)
Differential forward resistance RF=f(IF)
Semiconductor Group 4
BAS 70W
Permissible Pulse load IF=f(TA;TS*)
* Package mounted on epoxy
Permissible Pulse load IFmax /IFDC =f(tp)
Permissible load RthJS =f(tp)
