DTC143T series Datasheet NPN 100mA 50V Digital Transistors (Bias Resistor Built-in Transistors) l Outline Parameter VCEO Value IC 100mA R1 4.7k VMT3 EMT3F 50V DTC143TM (SC-105AA) DTC143TEB (SC-89) EMT3 l Features 1) Built-In Biasing Resistor 2) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see inner circuit) . 3) The bias resistors consist of thin-film resistors with complete isolation to allow negative biasing of the input. They also have the advantage of completely eliminating parasitic effects. 4) Only the on/off conditions need to be set for operation, making the circuit design easy. 5) Complementary PNP Types: DTA143T series 6) Complex transistors: EMH3/ UMH3N/ IMH3A/ EMG3/ UMG3N/ FMG3A PNP type 7) Lead Free/RoHS Compliant. UMT3F DTC143TE SOT-416(SC-75A) UMT3 DTC143TUB (SC-85) SMT3 DTC143TUA SOT-323(SC-70) DTC143TKA SOT-346(SC-59) l Inner circuit B: BASE C: COLLECTOR E: EMITTER l Application Switching circuit, Inverter circuit, Interface circuit, Driver circuit l Packaging specifications Package Package size Taping code DTC143TM DTC143TEB VMT3 EMT3F 1212 1616 T2L TL 180 180 DTC143TE DTC143TUB DTC143TUA DTC143TKA EMT3 UMT3F UMT3 SMT3 1616 2021 2021 2928 TL TL T106 T146 180 180 180 180 Part No. www.rohm.com (c) 2012 ROHM Co., Ltd. All rights reserved. 1/9 Basic ordering unit.(pcs) Marking 8 8 8000 3000 03 03 8 8 8 8 3000 3000 3000 3000 03 03 03 03 Reel size Tape width (mm) (mm) 20121023 - Rev.001 DTC143T series Datasheet l Absolute maximum ratings (Ta = 25C) Parameter Symbol Values Unit Collector-base voltage VCBO 50 V Collector-emitter voltage VCEO 50 V Emitter-base voltage VEBO 5 V IC 100 mA Collector current Power dissipation DTC143TM 150 DTC143TEB 150 DTC143TE 150 PD*1 DTC143TUB DTC143TUA 200 DTC143TKA 200 Junction temperature Range of storage temperature mW 200 Tj 150 Tstg -55 to +150 l Electrical characteristics (Ta = 25C) Parameter Symbol Values Conditions Unit Min. Typ. Max. Collector-base breakdown voltage BVCBO IC = 50A 50 - - V Collector-emitter breakdown voltage BVCEO IC = 1mA 50 - - V Emitter-base breakdown voltage BVEBO IE = 50A 5 - - V Collector cut-off current ICBO VCB = 50V - - 0.5 A Emitter cut-off current IEBO VEB = 4V - - 0.5 A VCE(sat) IC / IB = 5mA / 0.25mA - - 0.15 V DC current gain hFE VCE = 5V, IC = 1mA 100 250 600 - Input resistance R1 3.5 4.7 5.9 k Transition frequency f T*2 - 250 - MHz Collector-emitter saturation voltage VCE = 10V, IE = -5mA, f = 100MHz *1 Each terminal mounted on a reference footprint *2 Characteristics of built-in transistor www.rohm.com (c) 2012 ROHM Co., Ltd. All rights reserved. 2/9 20121023 - Rev.001 DTC143T series Datasheet l Electrical characteristic curves(Ta=25 ) Fig.1 Grounded emitter propagation characteristics Fig.2 Grounded emitter output characteristics Fig.3 DC Current gain vs. Collector Current Fig.4 Collector-emitter saturation voltage vs. Collector Current www.rohm.com (c) 2012 ROHM Co., Ltd. All rights reserved. 3/9 20121023 - Rev.001 DTC143T series Datasheet l Dimensions www.rohm.com (c) 2012 ROHM Co., Ltd. All rights reserved. 4/9 20121023 - Rev.001 DTC143T series Datasheet l Dimensions www.rohm.com (c) 2012 ROHM Co., Ltd. All rights reserved. 5/9 20121023 - Rev.001 DTC143T series Datasheet l Dimensions www.rohm.com (c) 2012 ROHM Co., Ltd. All rights reserved. 6/9 20121023 - Rev.001 DTC143T series Datasheet l Dimensions www.rohm.com (c) 2012 ROHM Co., Ltd. All rights reserved. 7/9 20121023 - Rev.001 DTC143T series Datasheet l Dimensions www.rohm.com (c) 2012 ROHM Co., Ltd. All rights reserved. 8/9 20121023 - Rev.001 DTC143T series Datasheet l Dimensions www.rohm.com (c) 2012 ROHM Co., Ltd. All rights reserved. 9/9 20121023 - Rev.001 Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: ROHM Semiconductor: DTC143TETL DTC143TKAT146 DTC143TMT2L DTC143TUAT106 DTC143TEBTL DTC143TUBTL