PD - 9.1369B IRLI3705N HEXFET(R) Power MOSFET Logic-Level Gate Drive Advanced Process Technology l Isolated Package l High Voltage Isolation = 2.5KVRMS l Sink to Lead Creepage Dist. = 4.8mm l Fully Avalanche Rated Description l D l VDSS = 55V RDS(on) = 0.01 G S ID = 52A Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-220 Fullpak eliminates the need for additional insulating hardware in commercial-industrial applications. The moulding compound used provides a high isolation capability and a low thermal resistance between the tab and external heatsink. This isolation is equivalent to using a 100 micron mica barrier with standard TO-220 product. The Fullpak is mounted to a heatsink using a single clip or by a single screw fixing. TO-220 FULLPAK Absolute Maximum Ratings Parameter ID @ TC = 25C ID @ TC = 100C IDM PD @TC = 25C VGS EAS IAR EAR dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 srew Max. Units 52 37 310 58 0.39 16 340 46 5.8 5.0 -55 to + 175 A W W/C V mJ A mJ V/ns C 300 (1.6mm from case ) 10 lbf*in (1.1N*m) Thermal Resistance Parameter RJC RJA Junction-to-Case Junction-to-Ambient Typ. Max. Units --- --- 2.6 65 C/W 8/25/97 IRLI3705N Electrical Characteristics @ TJ = 25C (unless otherwise specified) V(BR)DSS/TJ Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Qg Qgs Qgd td(on) tr td(off) tf Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Min. 55 --- --- --- --- 1.0 50 --- --- --- --- --- --- --- --- --- --- --- RDS(on) Static Drain-to-Source On-Resistance VGS(th) gfs Gate Threshold Voltage Forward Transconductance IDSS Drain-to-Source Leakage Current LD Internal Drain Inductance --- LS Internal Source Inductance --- Ciss Coss Crss C Input Capacitance Output Capacitance Reverse Transfer Capacitance Drain to Sink Capacitance --- --- --- --- V(BR)DSS IGSS Typ. --- 0.056 --- --- --- --- --- --- --- --- --- --- --- --- 12 140 37 78 Max. Units Conditions --- V VGS = 0V, ID = 250A --- V/C Reference to 25C, ID = 1mA 0.010 VGS = 10V, ID = 28A 0.012 VGS = 5.0V, ID = 28A 0.018 VGS = 4.0V, ID = 24A 2.0 V VDS = VGS, ID = 250A --- S VDS = 25V, ID = 46A 25 VDS = 55V, VGS = 0V A 250 VDS = 44V, VGS = 0V, T J = 150C 100 VGS = 16V nA -100 VGS = -16V 98 ID = 46A 19 nC VDS = 44V 49 VGS = 5.0V, See Fig. 6 and 13 --- VDD = 28V --- ID = 46A ns --- RG = 1.8, VGS = 5.0V --- RD = 0.59, See Fig. 10 D Between lead, 4.5 --- 6mm (0.25in.) nH G from package 7.5 --- and center of die contact S 3600 --- VGS = 0V 870 --- VDS = 25V pF 320 --- = 1.0MHz, See Fig. 5 12 --- = 1.0MHz Source-Drain Ratings and Characteristics IS ISM VSD t rr Q rr Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Notes: Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 ) VDD = 25V, starting TJ = 25C, L = 320H RG = 25, IAS = 46A. (See Figure 12) Min. Typ. Max. Units --- --- 52 --- --- 310 --- --- --- --- 94 290 1.3 140 440 A V ns nC Conditions MOSFET symbol showing the G integral reverse p-n junction diode. TJ = 25C, IS = 28A, VGS = 0V TJ = 25C, IF = 46A di/dt = 100A/s D S ISD 46A, di/dt 250A/s, VDD V(BR)DSS, TJ 175C Pulse width 300s; duty cycle 2%. t=60s, =60Hz Uses IRL3705N data and test conditions IRLI3705N 1000 1000 VGS 15V 12V 10V 8.0V 6.0V 4.0V 3.0V BOTT OM 2.5V VGS 15V 12V 10V 8.0V 6.0V 4.0V 3.0V BOTT OM 2.5V TOP ID , D ra in -to -S o u rce C u rre n t (A ) ID , D ra in -to -S o u rc e C u rre n t (A ) TOP 100 10 2 .5V 20 s PU LSE W ID TH T J = 2 5C 1 0.1 1 10 100 2.5 V 10 20 s PU LSE W ID TH T J = 1 75C 1 A 100 0.1 V D S , Drain-to-Source V oltage (V ) 3.0 R D S (o n ) , D ra in -to -S o u rc e O n R e si sta n ce (N o rm a li ze d ) I D , D rain -to- S ou rce C ur ren t (A ) TJ = 2 5 C TJ = 1 7 5 C 10 V DS = 2 5V 2 0 s PU LS E W ID T H 2.0 3.0 4.0 5.0 6.0 7.0 V G S , G ate -to-S ource V oltage (V ) Fig 3. Typical Transfer Characteristics A 100 Fig 2. Typical Output Characteristics 1000 1 10 V D S , Drain-to-Source V oltage (V ) Fig 1. Typical Output Characteristics 100 1 8.0 A I D = 77 A 2.5 2.0 1.5 1.0 0.5 V G S = 10 V 0.0 -60 -40 -20 0 20 40 60 80 A 100 120 140 160 180 T J , Junction T emperature (C) Fig 4. Normalized On-Resistance Vs. Temperature IRLI3705N V GS C iss C rs s C is s C os s C , C a p a c ita n c e (p F ) 5000 = = = = 15 0V , f = 1 MH z C gs + C gd , C ds SH O R TED C gd C ds + C gd V G S , G a te -to -S o u rc e V o lta g e (V ) 6000 C os s 2000 C rs s 1000 0 A 1 10 V D S = 44 V V D S = 28 V 12 4000 3000 I D = 46 A 9 6 3 FO R TEST C IRC U IT SEE FIG UR E 13 0 100 0 V D S , D rain-to-S ource Voltage (V ) 40 60 80 100 120 A 140 Q G , T otal G ate Charge (nC) Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 1000 1000 OPE R ATIO N IN TH IS A RE A LIMITE D BY R D S(o n) I D , D ra in C u rre n t (A ) I S D , R e v e rse D ra in C u rre n t (A ) 20 100 TJ = 1 75C T J = 2 5C 10 s 100 100 s 1 ms 10 10m s VG S = 0 V 10 0.4 0.8 1.2 1.6 2.0 2.4 V S D , S ource-to-Drain Voltage (V ) Fig 7. Typical Source-Drain Diode Forward Voltage A 2.8 T C = 25 C T J = 17 5C S ing le Pulse 1 1 A 10 100 V D S , Drain-to-Source Voltage (V) Fig 8. Maximum Safe Operating Area IRLI3705N 60 RD VDS I D , Drain Current (A) 50 VGS D.U.T. RG + - VDD 40 5.0V 30 Pulse Width 1 s Duty Factor 0.1 % 20 Fig 10a. Switching Time Test Circuit 10 VDS 90% 0 25 50 75 100 125 T C , Case Temperature 150 175 ( C) 10% VGS Fig 9. Maximum Drain Current Vs. Case Temperature td(on) tr t d(off) tf Fig 10b. Switching Time Waveforms Thermal Response (Z thJC ) 10 D = 0.50 1 0.20 0.10 0.05 0.1 PDM t1 0.02 0.01 t2 SINGLE PULSE (THERMAL RESPONSE) 0.01 0.00001 0.0001 Notes: 1. Duty factor D = t1 / t 2 2. Peak T J = P DM x Z thJC + T C 0.001 0.01 0.1 1 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case 10 IRLI3705N 15 V L VDS D .U .T RG IA S 20V D R IV E R + - VDD 0 .0 1 tp Fig 12a. Unclamped Inductive Test Circuit V (BR )D SS A E A S , S in g le P u ls e A va la n c h e E n e rg y (m J) 800 TO P BO TTOM ID 1 9A 33A 46 A 600 400 200 0 V D D = 2 5V 25 50 A 75 100 125 150 Starting TJ , Junction T emperature (C) tp Fig 12c. Maximum Avalanche Energy Vs. Drain Current I AS Fig 12b. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. 50K QG 12V .2F .3F 5.0 V QGS D.U.T. QGD + V - DS VGS VG 3mA Charge Fig 13a. Basic Gate Charge Waveform IG ID Current Sampling Resistors Fig 13b. Gate Charge Test Circuit 175 IRLI3705N Peak Diode Recovery dv/dt Test Circuit + D.U.T Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer + - - + * * * * RG Driver Gate Drive Period P.W. + dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test D= - VDD P.W. Period VGS=10V D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt Re-Applied Voltage Body Diode VDD Forward Drop Inductor Curent Ripple 5% * VGS = 5V for Logic Level Devices Fig 14. For N-Channel HEXFETS ISD * IRLI3705N Package Outline TO-220 Fullpak Outline Dimensions are shown in millimeters (inches) 10.60 (.417 ) 10.40 (.409 ) o 3 .40 (.1 33) 3 .10 (.1 23) 4.80 (.189 ) 4.60 (.181 ) -A3.7 0 (.145) 3.2 0 (.126) 16 .0 0 (.630) 15 .8 0 (.622) 2.80 (.110) 2.60 (.102) L EA D AS SIGN M EN T S 1 - GA T E 2 - D R AIN 3 - SO U R C E 7.10 (.280 ) 6.70 (.263 ) 1.15 (.045) M IN . NO T ES : 1 D IM E N SION IN G & T O LER AN C IN G PE R A N SI Y1 4.5M , 1982 1 2 3 2 C O N T R OLL IN G D IM EN SION : IN C H . 3.30 (.130) 3.10 (.122) -B - 13 .7 0 (.540) 13 .5 0 (.530) C A 1.40 (.05 5) 3X 1.05 (.04 2) 0.90 (.035 ) 3X 0.70 (.028 ) 0.25 (.010) 3X M A M 0.48 (.019 ) 0.44 (.017 ) 2.85 (.1 12) 2.65 (.1 04) B 2 .5 4 (.100) 2X D B M IN IM U M C R E EP AG E D IST A N C E B ET W E EN A -B -C -D = 4.80 (.189 ) Part Marking Information TO-220 Fullpak E XAM : S T HIS N IRF I840G E X AM PLE PLE : T HI IS AISN AIRF 1010 SE LY MBLY W ITW H ITH A S SAS E MB CODE E401 LO TLOT CO DE 9B 1M A IN TE R NA T ION A L INT ER NAT IONA L R EC T IF IER IRIRF F 1010 RE CTIF IER I840G LO GO 9246 P A RT NU M BE R A PA RT NU MBE R LOGO 9 24 5 9BE 401 1M A SAS S EM B LY SE MBLY LOLOT T CO DE E COD D A TE C OD E ATEW )CODE (YDYW W )A R Y(YYW Y = YE AR WYY W == YE WE EK W W = W E EK WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331 EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020 IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111 IR FAR EAST: K&H Bldg., 2F, 3-30-4 Nishi-Ikeburo 3-Chome, Toshima-Ki, Tokyo Japan 171 Tel: 81 3 3983 0086 IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371 http://www.irf.com/ Data and specifications subject to change without notice. 8/97