IRLI3705N
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 55 – – – –– – V VGS = 0V, ID = 250µA
∆V(BR)DSS/∆TJBreakdown Voltage Temp. Coefficient ––– 0.056 ––– V/°C Reference to 25°C, ID = 1mA
––– ––– 0.010 VGS = 10V, ID = 28A
––– ––– 0.012 ΩVGS = 5.0V, ID = 28A
––– ––– 0.018 VGS = 4.0V, I D = 24A
VGS(th) Gate Threshold Voltage 1.0 ––– 2.0 V VDS = VGS, ID = 250µA
gfs Forward Transconductance 50 ––– ––– S VDS = 25V, ID = 46A
––– ––– 25 µA VDS = 55V, VGS = 0V
––– ––– 250 VDS = 44V, VGS = 0V, TJ = 150°C
Gate-to-Source Forward Leakage ––– – –– 100 nA VGS = 16V
Gate-to-Source Reverse Leakage ––– – –– -100 VGS = -16V
QgTotal Gate Charge –– – ––– 98 ID = 46A
Qgs Gate-to-Source Charge ––– – –– 19 nC VDS = 44V
Qgd Gate-to-Drain ("Miller") Charge ––– – –– 4 9 VGS = 5.0V, See Fig. 6 and 13
td(on) Turn-On Delay Time ––– 12 – –– VDD = 28V
trRise Time ––– 140 ––– ns ID = 46A
td(off) Turn-Off Delay Time ––– 37 – –– RG = 1.8Ω, VGS = 5.0V
tfFall Time ––– 78 ––– RD = 0.59Ω, See Fig. 10
Between lead,
6mm (0.25in.)
from package
and center of die contact
Ciss Input Capacitance ––– 3600 ––– VGS = 0V
Coss Output Capacitance ––– 870 ––– VDS = 25V
Crss Reverse Transfer Capacitance ––– 320 ––– ƒ = 1.0MHz, See Fig. 5
C Drain to Sink Capacitance ––– 12 – –– ƒ = 1.0MHz
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
IGSS
IDSS Drain-to-Source Leakage Current
LDInternal Drain Inductance ––– 4.5 –––
LSInternal Source Inductance ––– 7.5 –––
RDS(on) Static Drain-to-Source On-Resistance
nH
pF
S
D
G
Parameter Min. Typ. Max. Units Conditions
ISContinuous Source Current MOSFET symbol
(Body Diode) ––– ––– showing the
ISM Pulsed Source Current integral reverse
(Body Diode)
––– ––– p-n junction diode.
VSD Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C, IS = 28A, VGS = 0V
trr Reverse Recovery Time ––– 94 1 4 0 ns TJ = 25°C, IF = 46A
Qrr Reverse RecoveryCharge ––– 290 44 0 nC di/dt = 100A/µs
S
D
G
A
52
310
Source-Drain Ratings and Characteristics
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
VDD = 25V, starting TJ = 25°C, L = 320µH
RG = 25Ω, IAS = 46A. (See Figure 12)
Notes:
Pulse width ≤ 300µs; duty cycle ≤ 2%.
Uses IRL3705N data and test conditions
ISD ≤ 46A, di/dt ≤ 250A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 175°C
t=60s, ƒ=60Hz