DS30040 Rev. 7 - 2 1 of 4 MMBT2907A
www.diodes.com ã Diodes Incorporated
MMBT2907A
PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR
·Epitaxial Planar Die Construction
·Complementary NPN Type Available
(MMBT2222A)
·Ideal for Medium Power Amplification and Switching
·Available in Lead Free/RoHS Compliant Version
Characteristic Symbol MMBT2907A Unit
Collector-Base Voltage VCBO -60 V
Collector-Emitter Voltage VCEO -60 V
Emitter-Base Voltage VEBO -5.0 V
Collector Current - Continuous (Note 1) IC-600 mA
Power Dissipation (Note 1) Pd300 mW
Thermal Resistance, Junction to Ambient (Note 1) RqJA 417 °C/W
Operating and Storage and Temperature Range Tj,T
STG -55 to +150 °C
Features
Maximum Ratings @ TA= 25°C unless otherwise specified
A
E
JL
TOP VIEW
M
BC
H
G
D
K
C
BE
Mechanical Data
·Case: SOT-23
·Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
·Moisture Sensitivity: Level 1 per J-STD-020C
·Terminal Connections: See Diagram
·Terminals: Solderable per MIL-STD-202, Method 208
·Also Available in Lead Free Plating (Matte Tin Finish
annealed over Alloy 42 leadframe). Please see Ordering
Information, Note 5, on Page 2
·Marking (See Page 2): K2F
·Ordering & Date Code Information: See Page 2
·Weight: 0.008 grams (approximate)
SOT-23
Dim Min Max
A0.37 0.51
B1.20 1.40
C2.30 2.50
D0.89 1.03
E0.45 0.60
G1.78 2.05
H2.80 3.00
J0.013 0.10
K0.903 1.10
L0.45 0.61
M0.085 0.180
a0°8°
All Dimensions in mm
Notes: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout
document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
2. No purposefully added lead.
E
B
C
SPICE MODEL: MMBT2907A
DS30040 Rev. 7 - 2 2 of 4 MMBT2907A
www.diodes.com
Electrical Characteristics @ TA = 25°C unless otherwise specified
Characteristic Symbol Min Max Unit Test Condition
OFF CHARACTERISTICS (Note 3)
Collector-Base Breakdown Voltage V(BR)CBO -60 ¾VIC= -10mA, IE = 0
Collector-Emitter Breakdown Voltage V(BR)CEO -60 ¾VIC= -10mA, IB = 0
Emitter-Base Breakdown Voltage V(BR)EBO -5.0 ¾VIE = -10mA, IC = 0
Collector Cutoff Current ICBO ¾-10 nA
mA
VCB = -50V, IE= 0
VCB = -50V, IE= 0, TA = 125°C
Collector Cutoff Current ICEX ¾-50 nA VCE = -30V, VEB(OFF) = -0.5V
Base Cutoff Current IBL ¾-50 nA VCE = -30V, VEB(OFF) = -0.5V
ON CHARACTERISTICS (Note 3)
DC Current Gain hFE
75
100
100
100
50
¾
¾
¾
300
¾
¾
IC = -100µA, VCE = -10V
IC = -1.0mA, VCE = -10V
IC = -10mA, VCE = -10V
IC = -150mA, VCE = -10V
IC = -500mA, VCE = -10V
Collector-Emitter Saturation Voltage VCE(SAT) ¾-0.4
-1.6 VIC= -150mA, IB = -15mA
IC = -500mA, IB = -50mA
Base-Emitter Saturation Voltage VBE(SAT) ¾-1.3
-2.6 VIC = 150mA, IB = 15mA
IC = 500mA, IB = 50mA
SMALL SIGNAL CHARACTERISTICS
Output Capacitance Cobo ¾8.0 pF VCB = -10V, f = 1.0MHz, IE = 0
Input Capacitance Cibo —30pF
VEB = -2.0V, f = 1.0MHz, IC = 0
Current Gain-Bandwidth Product fT200 ¾MHz VCE = -20V, IC = -50mA,
f = 100MHz
SWITCHING CHARACTERISTICS
Turn-On Time toff ¾45 ns
Delay Time td¾10 ns VCC = -30V, IC = -150mA,
IB1 = -15mA
Rise Time tr¾40 ns
Turn-Off Time toff ¾100 ns
Storage Time ts¾80 ns VCC = -6.0V, IC = -150mA,
IB1 = IB2 = -15mA
Fall Time tf¾30 ns
Notes: 3. Short duration test pulse used to minimize self-heating effect.
4. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
5. For Lead Free/RoHS Compliant version part number, please add "-F" suffix to the part number above. Example: MMBT2907A-7-F.
Ordering Information (Note 4)
Device Packaging Shipping
MMBT2907A-7 SOT-23 3000/Tape & Reel
Marking Information
K2F
YM
K2F = Product Type Marking Code
YM = Date Code Marking
Y = Year ex: N = 2002
M = Month ex: 9 = September
Date Code Key
Month Jan Feb March Apr May Jun Jul Aug Sep Oct Nov Dec
Code 1234567
89 OND
Year 1998 1999 2000 2001 2002 2003 2004 2005 2006 2007 2008 2009
Code JKLMNPR
ST U VW
DS30040 Rev. 7 - 2 3 of 4 MMBT2907A
www.diodes.com
1.0
5.0
20
10
30
-0.1 -10
-1.0 -30
C
,
C
APA
C
ITAN
C
E
(
pF
)
REVERSE VOLTS (V)
Fig. 2 Typical Capacitance
Cobo
Cibo
I , BASE CURRENT (mA)
B
Fig. 3 Typical Collector Saturation Region
VC
O
LLECT
O
R-EMITTER V
O
LTAGE (V)
CE
0.001 0.01
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
0.1 110 100
I = 1mA
C
I=10mA
C
I = 30mA
C
I = 100mA
C
I = 300mA
C
0
50
100
25 50 75 100 125 150 175 200
P , POWER DISSIPATION (mW)
D
T , AMBIENT TEMPERATURE (°C)
A
Fig. 1, Max Power Dissipation vs
Ambient Tem
p
erature
150
200
250
300
350
0
DS30040 Rev. 7 - 2 4 of 4 MMBT2907A
www.diodes.com
0
0.1
0.2
0.3
0.6
0.5
0.4
110 100 1000
I , COLLECTOR CURRENT (mA)
C
Fig. 4, Collector Emitter Saturation Voltage vs.
Collector Current
V,C
O
LLECT
O
RT
O
EMITTER
CE(SAT)
SATURATION VOLTAGE (V)
IC
IB
=10
T = 150°C
A
T = 25°C
A
T = -50°C
A
1
10
1000
100
110 1000
100
h , DC CURRENT
FE
GAIN (NORMALIZED)
I , COLLECTOR CURRENT (mA)
C
Fig. 5, DC Current Gain vs
Collector Current
V= 5V
CE
T= 150°C
A
T= 25°C
A
T= -50°C
A
1
10
1000
100
110 100
f , GAIN BANDWIDTH PRODUCT (MHz)
T
I , COLLECTOR CURRENT (mA)
C
Fig. 7, Gain Bandwidth Product vs.
Collector Current
V=5V
CE
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
.
0
0.1 110 100
V , BASE EMITTER VOLTAGE (V)
BE(ON)
I , COLLECTOR CURRENT (mA)
C
Fig. 6, Base Emitter Voltage
vs. Collector Current
V=5V
CE
T = 150°C
A
T=25°C
A
T = -50°C
A
