New Product
DF005SA thru DF10SA
Vishay General Semiconductor
Document Number: 88574
Revision: 30-Jan-08
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
1
Miniature Glass Passivated Single-Phase
Surface Mount Bridge Rectifiers
FEATURES
• UL recognition, file number E54214
• Ideal for automated placement
• Middle surge current capability
• Meets MSL level 1, per J-STD-020,
LF maximum peak of 250 °C
• Solder dip 260 °C, 40 s
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
TYPICAL APPLICATIONS
General purpose use in ac-to-dc bridge full wave
rectification for SMPS, lighting ballaster, adapter,
battery charger, home appliances, office equipment,
and telecommunication applications.
MECHANICAL DATA
Case: DFS
Epoxy meets UL 94V-0 flammability rating
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3 suffix for consumer grade, meets JESD 201 class
1A whisker test
Polarity: As marked on body
PRIMARY CHARACTERISTICS
IF(AV) 1 A
VRRM 50 V to 1000 V
IFSM 30 A
IR5 µA
VF1.1 V
TJ max. 150 °C
Case Style DFS
~
~
~
~
Note:
(1) Units mounted on P.C.B. with 0.51 x 0.51" (13 x 13 mm) copper pads
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER SYMBOL DF005SA DF01SA DF02SA DF04SA DF06SA DF08SA DF10SA UNIT
Device marking code DFA005S DFA01S DFA02S DFA04S DFA06S DFA08S DFA10S
Maximum repetitive peak
reverse voltage VRRM 50 100 200 400 600 800 1000 V
Maximum RMS voltage VRMS 35 70 140 280 420 560 700 V
Maximum DC blocking voltage VDC 50 100 200 400 600 800 1000 V
Maximum average forward output
rectified current at TA = 40 °C (1) IF(AV) 1.0 A
Peak forward surge current
single half sine-wave
superimposed on rated load
IFSM 30 A
Rating for fusing (t < 8.3 ms) I2t 4.5 A2s
Operating junction and storage
temperature range TJ, TSTG - 55 to + 150 °C
New Product
DF005SA thru DF10SA
Vishay General Semiconductor
www.vishay.com For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
Document Number: 88574
Revision: 30-Jan-08
2
Note:
(1) Measured at 1.0 MHz and applied reverse voltage of 4.0 V
Note:
(1) Units mounted on P.C.B. with 0.51 x 0.51" (13 x 13 mm) copper pads
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER TEST
CONDITIONS SYMBOL DF005SA DF01SA DF02SA DF04SA DF06SA DF08SA DF10SA UNIT
Maximum
instantaneous forward
voltage drop per diode
1.0 A VF 1.1 V
Maximum DC reverse
current at rated DC
blocking voltage per diode
TA = 25 °C
TA = 125 °C IR 5.0
500 µA
Typical junction
capacitance per diode (1) CJ 25 pF
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER SYMBOL DF005SA DF01SA DF02SA DF04SA DF06SA DF08SA DF10SA UNIT
Typical thermal resistance (1) RθJA
RθJL
40
15 °C/W
ORDERING INFORMATION (Example)
PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE
DF06SA-E3/45 0.386 45 50 Tube
DF06SA-E3/77 0.386 77 1500 13" diameter paper tape and reel
Figure 1. Derating Curve Output Rectified Current
20 40 60 80100 120 140 160
0
0.5
1.0
60 Hz
Resistive or
Inductive Load
Ambient Temperature (°C)
Average Forward Output Current (A)
P.C.B. Mounted on
0.51 x 0.51" (13 x 13 mm)
Copper Pads
Figure 2. Maximum Non-Repetitive Peak Forward Surge
Current Per Diode
110 100
0
5
10
15
20
25
30
T
J
= 150 °C
Single Sine-Wave
Number of Cycles at 60 Hz
Peak Forward Surge Current (A)
1.0 Cycle
New Product
DF005SA thru DF10SA
Vishay General Semiconductor
Document Number: 88574
Revision: 30-Jan-08
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
3
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
Figure 3. Typical Forward Characteristics Per Diode
Figure 4. Typical Reverse Leakage Characteristics Per Diode
0.4 0.6 0.81.0 1.2 1.4
0.01
0.1
1
10
Instantaneous Forward Voltage (V)
Instantaneous Forward Current (A)
TJ = 25 °C
Pulse Width = 300 µs
1 % Duty Cycle
020 40 60 80100
0.01
0.1
1
10
100
T
J
= 125 °C
T
J
= 50 °C
Percent of Rated Peak Reverse Voltage (%)
Instantaneous Reverse Current (µA)
Figure 5. Typical Junction Capacitance Per Diode
Figure 6. Typical Transient Thermal Impedance
110 100
1
10
100
Reverse Voltage (V)
Junction Capacitance (pF)
T
J
= 25 °C
f = 1.0 MHz
V
sig
= 50 mVp-p
0.01 0.1 110 100
0.1
1
10
100
t - Heating Time (s)
Transient Thermal Impedance (°C/W)
MountingPad La yout
0.255 (6.5)
0.245 (6.2)
0.013 (0.330)
0.009 (0.241)
0.060 (1.524)
0.040 (1.016)
0.404 (10.3)
0.013 (0.330)
0.003 (0.076)
0.047 (1.20)
0.040 (1.02)
0.205 (5.2)
0.195 (5.0)
0.335 (8.51)
0.320 (8.13)
0.130 (3.3)
0.120 (3.05)
45°
0.386 (9.80)
Case Style DFS
0.404 MAX.
(10.26 MAX.)
0.205 (5.2)
0.195 (5.0)
0.047 MIN.
(1.20 MIN.)
0.060 MIN.
(1.52 MIN.)
Legal Disclaimer Notice
www.vishay.com Vishay
Revision: 12-Mar-12 1Document Number: 91000
Disclaimer
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operating parameters, including typical parameters, must be validated for each customer application by the customer’s
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including but not limited to the warranty expressed therein.
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Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
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