TOSHIBA 1SS360F TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE 1SS360F ULTRA HIGH SPEED SWITCHING APPLICATIONS Unit in mm 1.6 +0.1 0.85 + 0.4 e mall Package : 1608 Flat Lead | 3 9 e =Excellent in Forward Current and Forward Voltage -| fap GH | 8 +s S)ala ce Characteristics : VF (3) = 0.92 V (Typ.) F dl ab | Ld. e Fast Reverse Recovery Time : ty, = 1.6 ns (Typ.) . CH e Small Total Capacitance : Cp = 2.2 pF (Typ.) 8 = H LOL: MAXIMUM RATINGS (Ta = 25C) oi_ oo oo CHARACTERISTIC SYMBOL | RATING | UNIT | fic Maximum (Peak) Reverse Voltage VRM 85 Vv Lee Reverse Voltage VR 80 Vv Maximum (Peak) Forward Current IrmM 300 (*) | mA 1. CATHODE! 2. CATHODE2 Average Forward Current Io 100 (*) | mA ESM 3. ANODE Surge Current (10 ms) Irom 2 (*) A Power Dissipation Pp 100 mW JEDEC Junction Temperature Tj 125 C EIA = Storage Temperature Range Tstg 55~125 i @ TOSHIBA 1-2SA1A (*) Unit Rating. Total Rating = Unit Rating x 1.5 ELECTRICAL CHARACTERISTICS (Ta = 25C) CHARACTERISTIC SYMBOL TEST CONDITION MIN. | TYP. | MAX. | UNIT VF(1) |Ip=1mA 0.61 | Forward Voltage VF(2) |Ip=10mA 0.74 | Vv VF(3) |Ip=100mA | 0.92 | 1.20 IRqd) |VR=380V 0.1 Reverse Current TR (2) Vp = 80V = = 05 un Total Capacitance Cr Vr = 0, f= 1MHz 2.2 | 4.0 | pF Reverse Recovery Time frp Ip=10mA (Fig.1) 16] 4.0] ns 961001EAA1 @ TOSHIBA is continually working to improve the quality and the reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to observe standards of safety, and to avoid situations in which a malfunction or failure of a TOSHIBA product could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent products specifications. Also, please keep in mind the precautions and conditions set forth in the TOSHIBA Semiconductor Reliability Handbook. @ The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION oar others. @ The information contained herein is subject to change without notice. 1999-02-17 1/3 TOSHIBA 1S8S360F Fig1. REVERSE RECOVERY TIME (try) TEST CIRCUIT MARKING INPUT OUTPUT WAVEFORM = WAVEFORM jwpyp 0.014F DUT ouTPUT _ A3 0 _ Ip = 10mA 0 =| =| I sl gs g = _6V 2 S Ip 0.1IR 50 ns SAMPLING PULSE GENERATOR OSCILLOSCOPE trr (Rout = 50 2) (RIN = 50 0) 1999-02-17 2/3 TOSHIBA 1SS360F (A) Tp FORWARD CURRENT TOTAL CAPACITANCE Cr (pF) S 5 2 5 3 _ 2 3 & 104 0 0.3 0.2 Ip VF 0.4 0.6 0.8 1.0 FORWARD VOLTAGE VF (V) Crt VR 1.2 f=1MHz Ta = 25C 1 3 10 30 REVERSE VOLTAGE VR (V) 100 200 REVERSE CURRENT Ip (A) REVERSE RECOVERY TIME t,, (ns) 100 50 30 10 0.1 IR VR 20 40 60 80 REVERSE VOLTAGE VR (V) trr Ip Ta = 25C Fig.1 0.3 1 3 10 30 100 FORWARD CURRENT Ip (mA) 1999-02-17 3/3