MCL4148
500mW 100 Volt
Silicon Epitaxial Diode
MICROMELF
Features
• Silicon epitaxial planar diode
• Fast Switching Speed
• This diode is also available in the DO-35 case with the type
designation 1N4148, in the Mini-MELF case with the type
designation DL4148
DIMENSIONS
INCHES
MM
DIM MIN MAX MIN MAX NOTE
A .071 .079 1.8 2.0
B .004 .008 .10 .20
C .047 .051 1.20 1.30 ∅
Maximum Ratings
• Operating Temperature: -55OC to +150OC
• Storage Temperature: -55OC to +150OC
• Maximum Thermal Resistance; 3500C/W Junction To Ambient
Electrical Characteristics @ 25OC Unless Otherwise Specified
Reverse Voltage VR 75V
Peak Reverse
Voltage VRM 100V
Maximum Average
Rectified Current IO 200mA Resistive Load
f > 50Hz
Power Dissipation PTOT 500mW1) TA=25OC
Junction Temperature TJ 150OC
Surge Forward
Current IFSM 2A t=1us, TJ=25OC
Maximum Forward
Voltage VF 1.0V IFM = 50mA;
TJ = 25OC*
Maximum DC
Reverse Current At
Rated DC Blocking
Voltage
IR 25nA
5.0uA
50uA
VR=20V
TJ=25OC VR=75V,
TJ=150OC VR=20V
Typical Junction
Capacitance CJ 4.0pF Measured at
VR=VF=0V
Reverse Recovery
Time Trr 4.0nS IF=10mA,
VR = 6.0V
RL=100OHMS
*Pulse test: Pulse width 300 usec, Duty cycle 2%
1) Valid provided that leads at a distance of 8mm from case are kept
at ambient temperature(DO-35)
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Revision: A 2011/01/01
0.055”
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Micro Commercial Components
• Epoxy meets UL 94 V-0 flammability rating
• Moisture Sensitivity Level 1
• Lead Free Finish/Rohs Compliant (Note1) ("P"Suffix designates
Compliant. See ordering information)
Note: 1. Lead in Glass Exemption Applied, see EU Directive Annex 7(C)-I.