© 2006 IXYS CORPORATION All rights reserved
Symbol Test Conditions Maximum Ratings
VDSS TJ= 25°C to 175°C85V
VDGR TJ= 25°C to 175°C; RGS = 1 MΩ85 V
VGSM Transient ± 20 V
ID25 TC= 25°C 180 A
ILRMS Lead Current Limit, RMS 75 A
IDM TC= 25°C, pulse width limited by TJM 480 A
IAR TC= 25°C25A
EAS TC= 25°C 1.0 J
dv/dt IS≤ I
DM, di/dt ≤ 100 A/µs, VDD ≤ V
DSS 3 V/ns
TJ≤ 175°C, RG = 5 Ω
PDTC= 25°C 430 W
TJ-55 ... +175 °C
TJM 175 °C
Tstg -55 ... +175 °C
TL1.6 mm (0.062 in.) from case for 10 s 300 °C
TSOLD Plastic body for 10 seconds 260 °C
MdMounting torque (TO-220) 1.13 / 10 Nm/lb.in.
Weight TO-263 2.5 g
TO-220 3.0 g
Symbol Test Conditions Characteristic Values
(TJ = 25°C unless otherwise specified) Min. Typ. Max.
BVDSS VGS = 0 V, ID = 250 µA85V
VGS(th) VDS = VGS, ID = 250 µA 2.0 4.0 V
IGSS VGS = ± 20 V, VDS = 0 V ± 200 nA
IDSS VDS = VDSS 5µA
VGS = 0 V TJ = 150°C 250 µA
RDS(on) VGS = 10 V, ID = 25 A, Notes 1, 2 4.5 5.5 m Ω
TrenchMVTM
Power MOSFET
Preliminary Technical Information
N-Channel Enhancement Mode
Avalanche Rated
IXTA180N085T
IXTP180N085T
VDSS =85 V
ID25 = 180 A
RDS(on) ≤≤
≤≤
≤5.5 m ΩΩ
ΩΩ
Ω
DS99642 (11/06)
TO-263 (IXTA)
TO-220 (IXTP)
GS
GDS
G = Gate D = Drain
S = Source TAB = Drain
(TAB)
(TAB)
Features
Ultra-low On Resistance
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
175 °C Operating Temperature
Advantages
Easy to mount
Space savings
High power density
Applications
Automotive
- Motor Drives
- High Side Switch
- 12V Battery
- ABS Systems
DC/DC Converters and Off-line UPS
Primary- Side Switch
High Current Switching
Applications
IXYS reserves the right to change limits, test conditions, and dimensions.
IXTA180N085T
IXTP180N085T
Symbol Test Conditions Characteristic Values
(TJ = 25°C unless otherwise specified) Min. Typ. Max.
gfs VDS= 10 V; ID = 60 A, Note 1 70 120 S
Ciss 7500 pF
Coss VGS = 0 V, VDS = 25 V, f = 1 MHz 930 pF
Crss 200 pF
td(on) Resistive Switching Times 32 ns
trVGS = 10 V, VDS = 0.5 VDSS, ID = 25 A 70 ns
td(off) RG = 5 Ω (External) 55 ns
tf65 ns
Qg(on) 170 nC
Qgs VGS= 10 V, VDS = 0.5 VDSS, ID = 25 A 40 nC
Qgd 46 nC
RthJC 0.35°C/W
RthCS TO-220 0.50 °C/W
Source-Drain Diode
Symbol Test Conditions Characteristic Values
TJ = 25°C unless otherwise specified) Min. Typ. Max.
ISVGS = 0 V 180 A
ISM Pulse width limited by TJM 480 A
VSD IF = 25 A, VGS = 0 V, Note 1 1.0 V
trr IF = 25 A, -di/dt = 100 A/µs90ns
VR = 40 V, VGS = 0 V
Notes: 1. Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %;
2. On through-hole packages, RDS(on) Kelvin test contact
location must be 5 mm or less from the package body.
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.06 4.83 .160 .190
A1 2.03 2.79 .080 .110
b 0.51 0.99 .020 .039
b2 1.14 1.40 .045 .055
c 0.46 0.74 .018 .029
c2 1.14 1.40 .045 .055
D 8.64 9.65 .340 .380
D1 7.11 8.13 .280 .320
E 9.65 10.29 .380 .405
E1 6.86 8.13 .270 .320
e 2.54 BSC .100 BSC
L 14.61 15.88 .575 .625
L1 2.29 2.79 .090 .110
L2 1.02 1.40 .040 .055
L3 1.27 1.78 .050 .070
L4 0 0.38 0 .015
R 0.46 0.74 .018 .029
TO-263AA (IXTA) Outline
Pins: 1 - Gate 2 - Drain
3 - Source 4, TAB - Drain
Pins: 1 - Gate 2 - Drain
3 - Source 4, TAB - Drain
TO-220AB (IXTP) Outline
IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2
one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405B2 6,759,692 7,063,975 B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6771478 B2 7,071,537
PRELIMINARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications
offered are derived from data gathered during objective characterizations of preliminary
engineering lots; but also may yet contain some information supplied during a pre-
production design evaluation. IXYS reserves the right to change limits, test conditions,
and dimensions without notice.
© 2006 IXYS CORPORATION All rights reserved
IXTA180N085T
IXTP180N085T
Fig. 1. Output Characteristics
@ 25ºC
0
20
40
60
80
100
120
140
160
180
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1
VDS - Volts
ID - Amperes
V
GS
= 10V
9V
8V
6V
7V
5V
Fig. 2. Extended Output Characteristics
@ 25ºC
0
40
80
120
160
200
240
280
0123456
VDS - Volts
ID - Amperes
V
GS
= 10V
9V
8V
6V
7V
5V
Fig. 3. Output Characteristics
@ 150ºC
0
20
40
60
80
100
120
140
160
180
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 2.2
VDS - Volts
ID - Amperes
V
GS
= 10V
9V
8V
7V
6V
5V
Fig. 4. R
DS(on)
Normalized to I
D
= 90A Value
vs. Junction Temperature
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
2.6
-50 -25 0 25 50 75 100 125 150 175
TJ - Degrees Centigrade
RDS(on) - Normalized
V
GS
= 10V
I
D
= 180A
I
D
= 90A
Fig. 5. R
DS(on)
Normalized to I
D
= 90A Value
vs. Drain Current
0.6
0.8
1
1.2
1.4
1.6
1.8
2
2.2
2.4
2.6
2.8
0 40 80 120 160 200 240 280
ID - Amperes
RDS(on) - Normalized
V
GS
= 10V
15V - - - -
T
J
= 175ºC
T
J
= 25ºC
Fig. 6. Drain Current vs. Case Temperature
0
20
40
60
80
100
120
140
-50 -25 0 25 50 75 100 125 150 175
TC - Degrees Centigrade
ID - Amperes
External Lead Current Limit for TO-263 (7-Lead)
External Lead Current Limit for TO-3P, TO-220, & TO-263
IXYS reserves the right to change limits, test conditions, and dimensions.
IXTA180N085T
IXTP180N085T
Fig. 7. Input Admittance
0
40
80
120
160
200
240
3.5 4 4.5 5 5.5 6 6.5
V
GS
- Volts
I
D
- Amperes
T
J
= -40ºC
25ºC
125ºC
Fig. 8. Transconductance
0
20
40
60
80
100
120
140
160
180
0 40 80 120 160 200 240
I
D
- Amperes
g
f s
- Siemens
T
J
= - 40ºC
25ºC
150ºC
Fig. 9. Forward Voltage Drop of
Intrinsic Diode
0
30
60
90
120
150
180
210
240
270
0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3
V
SD
- Volts
I
S
- Amperes
T
J
= 150ºC
T
J
= 25ºC
Fig. 10. Gate Charge
0
1
2
3
4
5
6
7
8
9
10
0 20 40 60 80 100 120 140 160 180
Q
G
- NanoCoulombs
V
GS
- Volts
V
DS
= 43V
I
D
= 25A
I
G
= 10mA
Fig. 11. Capacitance
100
1,000
10,000
0 5 10 15 20 25 30 35 40
V
DS
- Volts
Capacitance - PicoFarad
s
f
= 1 MHz
Ciss
Crss
Coss
Fig. 12. Maximum Transient Thermal
Impedance
0.01
0.10
1.00
0.0001 0.001 0.01 0.1 1 10
Pulse Width - Seconds
Z
(th)JC
- ºC / W
© 2006 IXYS CORPORATION All rights reserved
IXTA180N085T
IXTP180N085T
Fig. 14. Resistive Turn-on
Rise Time vs. Drain Current
20
30
40
50
60
70
80
90
24 26 28 30 32 34 36 38 40 42 44 46 48 50
I
D
- Amperes
t
r
- Nanosecond
s
RG
= 5Ω
VGS = 10V
VDS = 43V
TJ = 125ºC
TJ = 25ºC
Fig. 15. Resistive Turn-on
Switching Times vs. Gate Resistance
0
20
40
60
80
100
120
140
4 6 8 10 12 14 16 18 20
R
G
- Ohms
t
r
- Nanoseconds
32
36
40
44
48
52
56
60
t d ( o n )
- Nanoseconds
t
r
t
d(on)
- - - -
T
J
= 125ºC, VGS = 10V
VDS = 43V I D = 50A
I D = 25A
Fig. 16. Resistive Turn-off
Switching Times vs. Junction Temperature
46
48
50
52
54
56
58
60
62
64
66
68
25 35 45 55 65 75 85 95 105 115 125
T
J
- Degrees Centigrade
t
f
- Nanoseconds
50
54
58
62
66
70
74
78
82
86
90
94
t
d ( o f f )
- Nanoseconds
t
f
t
d(off)
- - - -
RG = 5Ω, VGS = 10V
VDS = 43V
I D = 25A
I D = 25A, 50A
I D = 50A
Fig. 17. Resistive Turn-off
Switching Times vs. Drain Current
44
48
52
56
60
64
68
72
24 28 32 36 40 44 48
I
D
- Amperes
t
f
- Nanoseconds
44
52
60
68
76
84
92
100
t d ( o f f ) - Nanoseconds
t
f
t
d(off)
- - - -
RG = 5Ω, V
GS
= 10V
V
DS
= 43V
T
J
= 125ºC
TJ = 25ºC
TJ = 125ºC
TJ = 25ºC
Fig. 13. Resistive Turn-on
Rise Time vs. Junction Temperature
20
30
40
50
60
70
80
25 35 45 55 65 75 85 95 105 115 125
T
J
- Degrees Centigrade
t
r
- Nanosecond
s
RG
= 5Ω
VGS = 10V
VDS = 43V
I D = 50A
I D = 25A
Fig. 18. Resistive Turn-off
Switching Times vs. Gate Resistance
40
60
80
100
120
140
160
4 6 8 101214161820
R
G
- Ohms
t
f
- Nanoseconds
60
100
140
180
220
260
300
t d ( o f f ) - Nanoseconds
t
f
t
d(off)
- - - -
TJ = 125ºC, VGS = 10V
VDS = 43V
I D = 50A
I D = 25A
IXYS REF: T_180N085T (5V) 6-13-06.xls
