PBSS4021NX
20 V, 7 A NPN low VCEsat (BISS) transistor
11 December 2012 Product data sheet
1. General description
NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power and
flat lead SOT89 (SC-62) Surface-Mounted Device (SMD) plastic package.
PNP complement: PBSS4021PX.
2. Features and benefits
•Very low collector-emitter saturation voltage VCEsat
•High collector current capability IC and ICM
•High collector current gain (hFE) at high IC
•High energy efficiency due to less heat generation
•AEC-Q101 qualified
•Smaller required Printed-Circuit Board (PCB) area than for conventional transistors
3. Applications
•Loadswitch
•Battery-driven devices
•Power management
•Charging circuits
•Power switches (e.g. motors, fans)
4. Quick reference data
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
VCEO collector-emitter
voltage
open base - - 20 V
ICcollector current - - 7 A
ICM peak collector current single pulse; tp ≤ 1 ms - - 15 A
RCEsat collector-emitter
saturation resistance
IC = 5 A; IB = 500 mA; pulsed;
tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C
- 19 28 mΩ
© Nexperia B.V. 2017. All rights reserved
Nexperia PBSS4021NX
20 V, 7 A NPN low VCEsat (BISS) transistor
PBSS4021NX All information provided in this document is subject to legal disclaimers.
Product data sheet 11 December 2012 2 / 14
5. Pinning information
Table 2. Pinning information
Pin Symbol Description Simplified outline Graphic symbol
1 E emitter
2 C collector
3 B base
3 2 1
SOT89
sym042
1
2
3
6. Ordering information
Table 3. Ordering information
PackageType number
Name Description Version
PBSS4021NX SOT89 plastic surface-mounted package; die pad for good heat transfer;
3 leads
SOT89
7. Marking
Table 4. Marking codes
Type number Marking code
[1]
PBSS4021NX %6D
[1] % = placeholder for manufacturing site code
8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
VCBO collector-base voltage open emitter - 20 V
VCEO collector-emitter voltage open base - 20 V
VEBO emitter-base voltage open collector - 5 V
ICcollector current - 7 A
ICM peak collector current single pulse; tp ≤ 1 ms - 15 A
IBbase current - 1 A
[1] - 600 mW
[2] - 1650 mW
Ptot total power dissipation Tamb ≤ 25 °C
[3] - 2500 mW
© Nexperia B.V. 2017. All rights reserved
Nexperia PBSS4021NX
20 V, 7 A NPN low VCEsat (BISS) transistor
PBSS4021NX All information provided in this document is subject to legal disclaimers.
Product data sheet 11 December 2012 3 / 14
Symbol Parameter Conditions Min Max Unit
Tjjunction temperature - 150 °C
Tamb ambient temperature -55 150 °C
Tstg storage temperature -65 150 °C
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm2.
[3] Device mounted on a ceramic PCB, Al2O3, standard footprint.
Tamb (°C)
- 75 17512525 75- 25
006aac174
1.0
2.0
3.0
Ptot
(W)
0.0
(1)
(3)
(2)
(1) Ceramic PCB, Al2O3, standard footprint
(2) FR4 PCB, mounting pad for collector 6 cm2
(3) FR4 PCB, standard footprint
Fig. 1. Power derating curves
9. Thermal characteristics
Table 6. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
[1] - - 210 K/W
[2] - - 75 K/W
Rth(j-a) thermal resistance
from junction to
ambient
in free air
[3] - - 50 K/W
Rth(j-sp) thermal resistance
from junction to solder
point
- - 20 K/W
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm2.
[3] Device mounted on a ceramic PCB, Al2O3, standard footprint.
© Nexperia B.V. 2017. All rights reserved
Nexperia PBSS4021NX
20 V, 7 A NPN low VCEsat (BISS) transistor
PBSS4021NX All information provided in this document is subject to legal disclaimers.
Product data sheet 11 December 2012 4 / 14
006aac175
10
1
102
103
Zth(j-a)
(K/W)
10- 1
10- 5 1010- 2
10- 4 102
10- 1
tp(s)
10- 3 103
1
duty cycle = 1
0.75 0.5
0.33
0.2
0.1
0.05
0.02
0.01
0
FR4 PCB, standard footprint
Fig. 2. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
006aac176
10- 5 1010- 2
10- 4 102
10- 1
tp(s)
10- 3 103
1
10
1
102
Zth(j-a)
(K/W)
10- 1
duty cycle = 1
0.75
0.5
0.33
0.2
0.1
0.05
0.02
0.01 0
FR4 PCB, mounting pad for collector 6 cm2
Fig. 3. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
© Nexperia B.V. 2017. All rights reserved
Nexperia PBSS4021NX
20 V, 7 A NPN low VCEsat (BISS) transistor
PBSS4021NX All information provided in this document is subject to legal disclaimers.
Product data sheet 11 December 2012 5 / 14
006aac177
10- 5 1010- 2
10- 4 102
10- 1
tp(s)
10- 3 103
1
10
1
102
Zth(j-a)
(K/W)
10- 1
duty cycle = 1
0.75
0.5
0.33
0.2
0.1
0.05 0.02
0.01 0
Ceramic PCB, Al2O3, standard footprint
Fig. 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
10. Characteristics
Table 7. Characteristics
Symbol Parameter Conditions Min Typ Max Unit
VCB = 20 V; IE = 0 A; Tamb = 25 °C - - 100 nAICBO collector-base cut-off
current VCB = 20 V; IE = 0 A; Tj = 150 °C - - 50 µA
ICES collector-emitter cut-off
current
VCE = 16 V; VBE = 0 V; Tamb = 25 °C - - 100 nA
IEBO emitter-base cut-off
current
VEB = 5 V; IC = 0 A; Tamb = 25 °C - - 100 nA
VCE = 2 V; IC = 500 mA; pulsed;
tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C
300 550 -
VCE = 2 V; IC = 1 A; pulsed; tp ≤ 300 µs;
δ ≤ 0.02 ; Tamb = 25 °C
300 550 -
VCE = 2 V; IC = 2 A; pulsed; tp ≤ 300 µs;
δ ≤ 0.02 ; Tamb = 25 °C
300 500 -
VCE = 2 V; IC = 4 A; pulsed; tp ≤ 300 µs;
δ ≤ 0.02 ; Tamb = 25 °C
250 450 -
hFE DC current gain
VCE = 2 V; IC = 8 A; pulsed; tp ≤ 300 µs;
δ ≤ 0.02 ; Tamb = 25 °C
100 200 -
IC = 1 A; IB = 50 mA; pulsed;
tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C
- 25 38 mVVCEsat collector-emitter
saturation voltage
IC = 1 A; IB = 10 mA; pulsed;
tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C
- 35 60 mV
© Nexperia B.V. 2017. All rights reserved
Nexperia PBSS4021NX
20 V, 7 A NPN low VCEsat (BISS) transistor
PBSS4021NX All information provided in this document is subject to legal disclaimers.
Product data sheet 11 December 2012 6 / 14
Symbol Parameter Conditions Min Typ Max Unit
IC = 2 A; IB = 40 mA; pulsed;
tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C
- 48 75 mV
IC = 4 A; IB = 200 mA; pulsed;
tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C
- 78 120 mV
IC = 4 A; IB = 40 mA; pulsed;
tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C
- 85 140 mV
IC = 7 A; IB = 350 mA; pulsed;
tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C
- 137 210 mV
RCEsat collector-emitter
saturation resistance
IC = 5 A; IB = 500 mA; pulsed;
tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C
- 19 28 mΩ
IC = 1 A; IB = 100 mA; pulsed;
tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C
- 0.82 0.9 VVBEsat base-emitter saturation
voltage
IC = 4 A; IB = 400 mA; pulsed;
tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C
- 0.92 1.05 V
VBEon base-emitter turn-on
voltage
VCE = 2 V; IC = 2 A; pulsed; tp ≤ 300 µs;
δ ≤ 0.02 ; Tamb = 25 °C
- 0.74 0.85 V
tddelay time - 40 - ns
trrise time - 40 - ns
ton turn-on time - 80 - ns
tsstorage time
VCC = 12.5 V; IC = 1 A; IBon = 0.05 A;
IBoff = -0.05 A; Tamb = 25 °C
- 650 - ns
tffall time - 75 - ns
toff turn-off time
VCC = 12.5 V; IC = 1 A; IBon = 0.05 A;
IBoff = -0.05 A; Tamb = 25 °C - 725 - ns
fTtransition frequency VCE = 10 V; IC = 100 mA; f = 100 MHz;
Tamb = 25 °C
- 115 - MHz
Cccollector capacitance VCB = 10 V; IE = 0 A; ie = 0 A;
f = 1 MHz; Tamb = 25 °C
- 85 - pF
© Nexperia B.V. 2017. All rights reserved
Nexperia PBSS4021NX
20 V, 7 A NPN low VCEsat (BISS) transistor
PBSS4021NX All information provided in this document is subject to legal disclaimers.
Product data sheet 11 December 2012 7 / 14
IC(mA)
10- 1 105
104
103
1 102
10
006aac178
400
600
200
800
1000
hFE
0
(1)
(3)
(2)
VCE = 2 V
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = −55 °C
Fig. 5. DC current gain as a function of collector
current; typical values
VCE (V)
0.0 5.04.02.0 3.01.0
006aac179
8.0
4.0
12.0
16.0
IC
(A)
0.0
7
IB(mA) = 70
56
42
28
63
49
35
14
21
Tamb = 25 °C
Fig. 6. Collector current as a function of collector-
emitter voltage; typical values
IC(mA)
10- 1 105
104
103
1 102
10
006aac180
0.4
0.8
1.2
VBE
(V)
0.0
(1)
(3)
(2)
VCE = 2 V
(1) Tamb = −55 °C
(2) Tamb = 25 °C
(3) Tamb = 100 °C
Fig. 7. Base-emitter voltage as a function of collector
current; typical values
IC(mA)
10- 1 105
104
103
1 102
10
006aac181
0.6
1.0
1.4
VBEsat
(V)
0.2
(1)
(3)
(2)
IC/IB = 20
(1) Tamb = −55 °C
(2) Tamb = 25 °C
(3) Tamb = 100 °C
Fig. 8. Base-emitter saturation voltage as a function of
collector current; typical values
© Nexperia B.V. 2017. All rights reserved
Nexperia PBSS4021NX
20 V, 7 A NPN low VCEsat (BISS) transistor
PBSS4021NX All information provided in this document is subject to legal disclaimers.
Product data sheet 11 December 2012 8 / 14
10- 1
10- 2
1
VCEsat
(V)
10- 3
006aac182
IC(mA)
10- 1 105
104
103
1 102
10
(1) (3)
(2)
IC/IB = 20
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = −55 °C
Fig. 9. Collector-emitter saturation voltage as a
function of collector current; typical values
006aac183
10- 3
10- 2
10- 1
1
VCEsat
(V)
10- 4
IC(mA)
10- 1 105
104
103
1 102
10
(1)
(2)
(3)
Tamb = 25 °C
(1) IC/IB = 100
(2) IC/IB = 50
(3) IC/IB = 10
Fig. 10. Collector-emitter saturation voltage as a
function of collector current; typical values
006aac184
IC(mA)
10- 1 104
103
1 102
10
10- 1
1
10
102
RCEsat
(Ω)
10- 2
(1)
(2)
(3)
IC/IB = 20
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = −55 °C
Fig. 11. Collector-emitter saturation resistance as a
function of collector current; typical values
1
10- 1
102
10
103
RCEsat
(Ω)
10- 2
006aac185
IC(mA)
10- 1 105
104
103
1 102
10
(1)
(3)
(2)
Tamb = 25 °C
(1) IC/IB = 100
(2) IC/IB = 50
(3) IC/IB = 10
Fig. 12. Collector-emitter saturation resistance as a
function of collector current; typical values
© Nexperia B.V. 2017. All rights reserved
Nexperia PBSS4021NX
20 V, 7 A NPN low VCEsat (BISS) transistor
PBSS4021NX All information provided in this document is subject to legal disclaimers.
Product data sheet 11 December 2012 9 / 14
11. Test information
006aaa003
IBon (100 %)
IB
input pulse
(idealized waveform)
IBoff
90 %
10 %
IC(100 %)
IC
td
ton
90 %
10 %
tr
output pulse
(idealized waveform)
tf
t
ts
toff
Fig. 13. BISS transistor switching time definition
RC
R2
R1
DUT
mlb826
Vo
RB
(probe)
450 Ω
(probe)
450 Ω
oscilloscope oscilloscope
VBB
VI
VCC
Fig. 14. Test circuit for switching times
11.1 Quality information
This product has been qualified in accordance with the Automotive Electronics Council
(AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is
suitable for use in automotive applications.
© Nexperia B.V. 2017. All rights reserved
Nexperia PBSS4021NX
20 V, 7 A NPN low VCEsat (BISS) transistor
PBSS4021NX All information provided in this document is subject to legal disclaimers.
Product data sheet 11 December 2012 10 / 14
12. Package outline
06-08-29Dimensions in mm
4.6
4.4
1.8
1.4
1.6
1.4
1.2
0.8
3
1.5
0.48
0.35
0.44
0.23
0.53
0.40
2.6
2.4 4.25
3.75
1 2 3
Fig. 15. Package outline SOT89
13. Soldering
solder lands
solder resist
occupied area
solder paste
sot089_fr
1.2
1.9
2
2.25
4.75
1
(3×)
0.7
(3×)
0.6
(3×)
1.1
(2×)
1.2
0.85 0.2
0.5
1.7
4.85
3.95
4.6
1.51.5
Dimensions in mm
Fig. 16. Reflow soldering footprint for SOT89
© Nexperia B.V. 2017. All rights reserved
Nexperia PBSS4021NX
20 V, 7 A NPN low VCEsat (BISS) transistor
PBSS4021NX All information provided in this document is subject to legal disclaimers.
Product data sheet 11 December 2012 11 / 14
solder lands
solder resist
occupied area
preferred transport direction during soldering
sot089_fw
0.7
5.3
6.6
2.4
3.5
0.5
1.8
(2×)
1.5
(2×)
7.6
1.9 1.9
Dimensions in mm
Fig. 17. Wave soldering footprint for SOT89
14. Revision history
Table 8. Revision history
Data sheet ID Release date Data sheet status Change notice Supersedes
PBSS4021NX v.3 20121211 Product data sheet - PBSS4021NX v.2
Modifications: •Editorial update
PBSS4021NX v.2 20121009 Product data sheet - PBSS4021NX v.1
PBSS4021NX v.1 20100401 Product data sheet - -
© Nexperia B.V. 2017. All rights reserved
Nexperia PBSS4021NX
20 V, 7 A NPN low VCEsat (BISS) transistor
PBSS4021NX All information provided in this document is subject to legal disclaimers.
Product data sheet 11 December 2012 12 / 14
15. Legal information
15.1 Data sheet status
Document
status [1][2]
Product
status [3]
Definition
Objective
[short] data
sheet
Development This document contains data from
the objective specification for product
development.
Preliminary
[short] data
sheet
Qualification This document contains data from the
preliminary specification.
Product
[short] data
sheet
Production This document contains the product
specification.
[1] Please consult the most recently issued document before initiating or
completing a design.
[2] The term 'short data sheet' is explained in section "Definitions".
[3] The product status of device(s) described in this document may have
changed since this document was published and may differ in case of
multiple devices. The latest product status information is available on
the Internet at URL http://www.nexperia.com.
15.2 Definitions
Preview — The document is a preview version only. The document is still
subject to formal approval, which may result in modifications or additions.
Nexperia does not give any representations or warranties as to
the accuracy or completeness of information included herein and shall have
no liability for the consequences of use of such information.
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. Nexperia does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences
of use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is
intended for quick reference only and should not be relied upon to contain
detailed and full information. For detailed and full information see the
relevant full data sheet, which is available on request via the local Nexperia
sales office. In case of any inconsistency or conflict with the
short data sheet, the full data sheet shall prevail.
Product specification — The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
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customer have explicitly agreed otherwise in writing. In no event however,
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is deemed to offer functions and qualities beyond those described in the
Product data sheet.
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to be accurate and reliable. However, Nexperia does not give
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make changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
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Suitability for use in automotive applications — This Nexperia
product has been qualified for use in automotive
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inclusion and/or use of Nexperia products in such equipment or
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Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Applications — Applications that are described herein for any of these
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representation or warranty that such applications will be suitable for the
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Customers are responsible for the design and operation of their
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damage, costs or problem which is based on any weakness or default
in the customer’s applications or products, or the application or use by
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and the products or of the application or use by customer’s third party
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Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those
given in the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
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applying the customer’s general terms and conditions with regard to the
purchase of Nexperia products by customer.
© Nexperia B.V. 2017. All rights reserved
Nexperia PBSS4021NX
20 V, 7 A NPN low VCEsat (BISS) transistor
PBSS4021NX All information provided in this document is subject to legal disclaimers.
Product data sheet 11 December 2012 13 / 14
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or construed as an offer to sell products that is open for acceptance or the
grant, conveyance or implication of any license under any copyrights, patents
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between the translated and English versions.
15.4 Trademarks
Notice: All referenced brands, product names, service names and
trademarks are the property of their respective owners.
© Nexperia B.V. 2017. All rights reserved
Nexperia PBSS4021NX
20 V, 7 A NPN low VCEsat (BISS) transistor
PBSS4021NX All information provided in this document is subject to legal disclaimers.
Product data sheet 11 December 2012 14 / 14
16. Contents
1 General description ............................................... 1
2 Features and benefits ............................................1
3 Applications ........................................................... 1
4 Quick reference data ............................................. 1
5 Pinning information ............................................... 2
6 Ordering information .............................................2
7 Marking ................................................................... 2
8 Limiting values .......................................................2
9 Thermal characteristics .........................................3
10 Characteristics .......................................................5
11 Test information .....................................................9
11.1 Quality information .........................................
12 Package outline ................................................... 10
13 Soldering .............................................................. 10
14 Revision history ...................................................11
15 Legal information .................................................12
15.1 Data sheet status ............................................... 12
15.2 Definitions ...........................................................12
15.3 Disclaimers .........................................................12
15.4 Trademarks ........................................................ 13
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Date of release:
11 December 2012
