5SGS 08D4500
TS - TG/079/02c Sep-11 1 of 6
5SGS 08D4500
Old part no. TG 907-800-45
Gate Turn-off Thyristor
Properties
Key Parameters
Full reverse voltage
VDRM, VRRM
=
4 500
V
High reliability
ITGQM
=
800
A
Suitable for drives and traction applications
ITAVm
=
285
A
ITSM
=
4 000
A
VTO
=
1.770
V
rT
=
3.106
m
Types
VDRM, VRRM
5SGS 08D4500
4 500 V
Conditions:
Tj = -40 ÷ 115 °C,
half sine waveform,
f = 50Hz
Mechanical Data
Fm
Mounting force
5 ± 1
kN
m
Weight
0.3
kg
DS
Surface
creepage
distance
25
mm
Da
Air strike
distance
13
mm
Fig. 1 Case
ABB s.r.o.
Novodvorska 1768/138a, 142 21 Praha 4, Czech Republic
tel.: +420 261 306 250, http://www.abb.com/semiconductors
5SGS 08D4500
ABB s.r.o., Novodvorska 1768/138a, 142 21 Praha 4, Czech Republic
ABB s.r.o. reserves the right to change the data contained herein at any time without notice
TS - TG/079/02c Sep-11 2 of 6
Maximum Ratings
Maximum Limits
Unit
VDRM
VRRM
Repetitive peak off-state and peak
reverse voltage
Tj = -40 ÷ 115 °C, VGC = -2 V
4 500
V
ITGQM
Peak Turn-off current
Tj = -40 ÷ 115 °C, CS=2 µF, diGC /dt = -25 A/µs,
VDM = 0.8 VDRM
800
A
ITRMS
RMS on-state current
Tc = 70 °C, half sine waveform, f = 50 Hz
450
A
ITAVm
Average on-state current
Tc = 70 °C, half sine waveform, f = 50 Hz
285
A
ITSM
Peak non-repetitive surge
half sine pulse, tp = 10 ms, VR = 0 V
4 000
A
I2t
Limiting load integral
half sine pulse, tp = 10 ms, VR = 0 V
80 000
A2s
(diT/dt)cr
Critical rate of rise of on-state current
IT = ITGQM, VD = 2/3 VDRM, f = 50 Hz
400
A/µs
(dvD/dt)cr
Critical rate of rise of off-state voltage
VD = 2/3 VDRM, VGC = - 2 V
1 000
V/µs
VDSP
Peak turn-off voltage spike due
to snubber
500
V
IFGCM
Peak forward gate current
30
A
IGCMS
RMS gate current
25
A
VGCM
Peak reverse gate voltage
-16
V
ton(min)
Minimum permissible on-time
50
s
toff(min)
Minimum permissible off-time
100
s
Tjmin - Tjmax
Operating temperature range
-40 ÷ 115
°C
Tstgmin -
Tstgmax
Storage temperature range
-40 ÷ 115
°C
Unless otherwise specified Tj = 115 °C
Type of GTO Thyristor
Recommended Diodes
SNUBBER
FREEWHEEL
5SGS 08D4500
5SDF 04D4504
5SDF 04D4504
5SGS 08D4500
ABB s.r.o., Novodvorska 1768/138a, 142 21 Praha 4, Czech Republic
ABB s.r.o. reserves the right to change the data contained herein at any time without notice
TS - TG/079/02c Sep-11 3 of 6
Characteristics
Value
Unit
min.
typ.
max.
VTM
Maximum peak on-state voltage
IGT = 2 A, ITM =800 A
4.330
V
VT0
Threshold voltage
1.770
V
rT
Slope resistance
IT1 = 333 A, IT2 = 1 000 A
3.106
m
IL
Latching current
Tj = 25 °C
40
A
IDM
Peak off-state current
VD = VDRM, VGC = -2 V
50
mA
IRM
Peak reverse current
VR = VRRM
50
mA
IGCM
Peak negative gate leakage current
VGC = -16 V
50
mA
VGT
Gate trigger voltage
Tj = -40 ÷ 115 °C
1.5
V
IGT
Gate trigger current
VD = 12 V, RL = 0.1
Tj = - 40 °C
Tj = 25 °C
Tj = 125 °C
4.0
1.0
0.6
A
tf
tS
tgq
ttail
Fall time
Storage time
Turn-off time
Tail time
Definitions as on Fig.9
VD = 2/3 VDRM,
ITGQ = ITGQM, CS = 2
F,
VGC = -15 V,
diGC /dt = -25 A/
s
1.5
12.5
14
30
µs
Unless otherwise specified Tj = 115 °C
Thermal Parameters
Value
Unit
Rthjc
Thermal resistance junction to case
double side cooling
40
K/kW
Rthch
Thermal resistance case to heatsink,
double side cooling
12
K/kW
5SGS 08D4500
ABB s.r.o., Novodvorska 1768/138a, 142 21 Praha 4, Czech Republic
ABB s.r.o. reserves the right to change the data contained herein at any time without notice
TS - TG/079/02c Sep-11 4 of 6
Transient Thermal Impedance
Analytical function for transient
thermal impedance
4
1))/exp(1(
iiithjc tRZ
Conditions:
Fm = 5 ± 1 kN, Double side cooled
i
1
2
3
4
Ri ( K/kW )
11.51
7.72
13.47
7.31
i ( s )
0.4201
0.1900
0.0592
0.0140
0
5
10
15
20
25
30
35
40
45
0,0001 0,001 0,01 0,1 1 10
Square wave pulse duration td ( s )
Zthjc ( K/kW )
10%
single
20%
30%
40%
50%
60%
70%
80%
D = 90%
Fig.2
Transient thermal impedance junction to case
(Double side cooled)
0
200
400
600
800
1000
1200
0 1 2 3 4 5 6
VT ( V )
IT ( A )
Tj = 25°C
115°C
0
200
400
600
800
1000
1200
1400
1600
1800
2000
0200 400 600 800
ITAV ( A )
PT ( W )
10%
ITRMSmax
20%
30%
40%
50%
60%
70%
80%
90%
D =100%
Fig.3
Maximum instaneous on-state
characteristics
Fig.4
Power losses
vs Rectangular pulse current
5SGS 08D4500
ABB s.r.o., Novodvorska 1768/138a, 142 21 Praha 4, Czech Republic
ABB s.r.o. reserves the right to change the data contained herein at any time without notice
TS - TG/079/02c Sep-11 5 of 6
200
400
600
800
1000
0 1 2 3 4
CS ( µF )
ITGQM ( A )
1
10
100
020 40 60 80 100
VDR normalized ( % of VDRM )
RGC ( )
Fig.5
Maximum permissible peak turn-off
current vs snubber capacitance
Fig.6
Maximum forward blocking voltage
vs External gate-cathode resistance
0
1
2
3
4
-40 -20 0 20 40 60 80 100 120
Tj ( °C )
IGT ( A )
0
1
2
3
4
5
6
7
8
-40 -30 -20 -10 0 10 20 30
Tj ( °C )
IGT normalized
Typical
Fig.7
Maximum gate trigger current
vs Junction temperature
Fig.8
Gate trigger current normalized to IGT
by 25°C vs Junction temperature
5SGS 08D4500
ABB s.r.o., Novodvorska 1768/138a, 142 21 Praha 4, Czech Republic
ABB s.r.o. reserves the right to change the data contained herein at any time without notice
TS - TG/079/02c Sep-11 6 of 6
0.0
0.2
0.4
0.6
0.8
1.0
0200 400 600 800
IT ( A )
Won ( J )
0.0
0.5
1.0
1.5
0200 400 600 800
ITGQ ( A )
Woff ( J )
Fig.9
Maximum turn-on energy per pulse
vs. on-state current, VD = 1000 V,
diT/dt = 200 A/µs, CS = 2 µF, RS = 5
,
Tj = Tjmax
Fig.10
Maximum turn-off energy per pulse
vs. turn-off current,
VD = 2250 V, CS = 2 µF, RS = 5
,
diGC /dt = -25 A/
s, Tj = Tjmax
Fig.11
Turn-off waveform diagram
Notes:
