T7024 ISM 2.4 GHz Front-End IC Description The T7024 is a monolithic SiGe transmit/ receive front end IC with power amplifier, low-noise amplifier and T/R switch driver. It is especially designed for operation in TDMA systems like Bluetooth and DECT. Due to the ramp-control feature and a very low quiescent current an external switch transistor for VS is not required. Electrostatic sensitive device. Observe precautions for handling. Features D Single 3-V supply voltage D Biasing for external PIN diode T/R switch D High-power-added efficient power amplifier (Pout typ. 23 dBm) D Current-saving standby mode D Few external components D Ramp-controlled output power D PSSO20 plastic package with down set paddle heat slug D Low-noise preamplifier (NF typ. 2 dB) PU RX_ON LNA_OUT GND PA_IN V1_PA GND V2_PA V2_PA RAMP Block Diagram 20 19 18 17 16 15 14 13 12 11 TX / RX / standby control PA LNA TX SiGe FE LNA_IN 7 8 9 10 GND GND 6 V3_PA_OUT SWITCH_OUT 5 V3_PA_OUT 4 V3_PA_OUT 3 GND 2 VS_LNA 1 R_SWITCH T7024 Figure 1. Block diagram Ordering Information Extended Type Number T7024-LSS T7024-LSQ Rev. A1, 20-Oct-99 Package PSSO20 PSSO20 Remarks Tube Taped and reeled 1 (6) T7024 Pin Description 20 PU R_SWITCH 1 19 RX_N SWITCH_OUT 2 18 LNA_OUT GND 3 17 GND LNA_IN 4 VS_LNA 5 16 PA_IN T7024 GND 6 15 V1_PA V3_PA_OUT 7 14 GND V3_PA_OUT 8 13 V2_PA V3_PA_OUT 9 12 V2_PA GND 10 11 RAMP Figure 2. Pinning Pin Symbol 1 R_SWITCH 2 SWITCH_OUT 3 4 GND LNA_IN 5 VS_LNA 6 7 8 9 10 GND V3_PA_OUT 11 RAMP GND 12 13 14 V2_PA GND 15 V1_PA 16 17 18 19 20 PA_IN GND LNA_OUT RX_ON PU Function Resistor to GND sets the PIN diode current Switched current output for PIN diode Ground Low-noise amplifier input Supply voltage input for low-noise amplifier Ground Inductor to power supply and matching network for power amplifier output Ground Power ramping control input Inductor to power supply for power amplifier Ground Supply voltage for power amplifier Power amplifier input Ground Low-noise amplifier output RX active high Power-up active high Absolute Maximum Ratings All voltages are referred to GND (Pin 3, 6, 10, 14, 17 and slug), no RF Supply voltage Junction temperature Storage temperature Parameters Pins 5, 7, 8, 9, 12, 13 and 15 Symbol VS Tj Tstg Value 6 150 - 40 to +125 Unit V C C Symbol RthJA Value 19 Unit K/W Thermal Resistance Parameters Junction ambient 2 (6) Rev. A1, 20-Oct-99 T7024 Operating Range All voltages are referred to GND (Pins 3, 6, 10, 14, 17 and slug). Power supply points are VS_LNA, V1_PA, V2_PA, V3_PA_OUT. The following table represents the sum of all supply currents depending on the TX/RX mode. Parameters Supply voltage Pins 7, 8, 9, 12, 13 and 15 Supply voltage Pin 5 Supply current TX RX Standby current PU = 0 Ambient temperature Symbol VS VS IS IS IS Tamb Min. 2.7 2.7 - 25 Typ. 3.0 3.0 190 8 10 +25 Max. 4.6 5.5 Unit V V mA mA A C +70 Electrical Characteristics Test conditions (unless otherwise specified): VS = 3.0 V, Tamb = 25C Parameters Power amplifier 1) Supply voltage Supply current Test Conditions / Pins Symbol Min. Typ. Pins 7, 8, 9, 12, 13 and 15 VS 2.7 3.0 TX IS_TX 190 RX (PA off) IS_RX Standby current Standby IS_standby Frequency range TX f 2.4 Power gain max. TX Pin 16 to Pins 7, 8, 9 Gp 25 Power gain min. TX Pin 16 to Pins 7, 8, 9 Gp - 17 Gain-control range TX ? Gp 42 Ramping voltage max. TX, power gain (max) VRAMP max 2.0 Pin 11 Ramping voltage min. TX, power gain (min) VRAMP min 0.1 Pin 11 Power-added efficiency TX PAE 35 TX, input power = 0 dBm Saturated output power Psat 23 referred to Pins 7, 8 and 9 Input matching 2) Load TX Pin 16 <1.5:1 VSWR Output matching 2) Load TX Pins 7, 8, 9 <1.5:1 VSWR 2 fo Harmonics @P 1dBCP TX Pins 7, 8, 9 - 30 3 fo T/R-- switch driver (current programming by external resistor from R_SWITCH to GND) Standby Pin 2 IS_O_standby Switch-out current output RX IS_O_RX TX @ 100 O IS_O_100 1 TX @ 1.2 kO IS_O_1k2 3 TX @ 33 kO IS_O_33k 10 Note: 1) 2) Max. Unit 4.6 V mA mA mA GHz dB 10 10 2.5 dB V V % dBm dBc 1 1 mA mA mA mA mA Power amplifier shall be unconditional stable, maximum duty cycle 100%, true cw operation, maximum load mismatch and duration t.b.d. With external matching network, load impedance 50 O Rev. A1, 20-Oct-99 3 (6) T7024 Electrical Characteristics (continued) Parameters Low-noise amplifier 3) Supply voltage Supply current Supply current (LNA and control logic) Standby current Frequency range Power gain Noise figure Gain compression 3rd-order input interception point Input matching 4) Output matching 4) Logic input levels (RX_ON, PU) High input level Test Conditions / Pins Symbol Min. Typ. Max. Unit All Pin 5 RX TX (control logic active) Pin 5 Standby Pin 5 RX RX Pin 4 to Pin 18 RX RX, referred to Pin 18 RX RX Pin 4 RX Pin 18 VS IS 2.7 3.0 8 5.5 V mA Low input level High input current Low input current = `0' = `1' = `0' = `1' IS IS_standby f Gp NF O1dB IIP3 VSWRin VSWRout Pins 19 and 20 3) Low-noise amplifier shall be unconditional stable 4) with external matching components 1 1 2.4 mA 10 2.5 16 2.0 -7 - 14 <2:1 <2:1 ViH 2.4 ViL IiH IiL 0 VS, LNA 0.5 40 0.2 A GHz dB dB dBm dBm V V A A Control Logic Power up Standby 4 (6) PU 1 0 RX mode TX mode RX_ON 1 0 Rev. A1, 20-Oct-99 T7024 Package Information Package PSSO20 Dimensions in mm Rev. A1, 20-Oct-99 5 (6) T7024 Ozone Depleting Substances Policy Statement It is the policy of TEMIC Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. TEMIC Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. TEMIC Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use TEMIC Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify TEMIC Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. TEMIC Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 (0)7131 67 2594, Fax number: 49 (0)7131 67 2423 6 (6) Rev. A1, 20-Oct-99