MBRF735 - MBRF7150
CREAT BY ART
- Low power loss, high efficiency
- Guard ring for over-voltage protection
- High surge current capability
- UL Recognized File # E-326243
- Halogen-free according to IEC 61249-2-21
Molding compound: UL flammability classification rating 94V-0
Part no. with suffix "H" means AEC-Q101 qualified
Packing code with suffix "G" means green compound (halogen-free)
Terminal: Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 2 whisker test
V
RRM
35 45 50 60 90 100 150 V
V
RMS
24 31 35 42 63 70 105 V
V
DC
35 45 50 60 90 100 150 V
I
F(AV)
A
I
RRM
A
1.02
0.92
-
-
dV/dt V/μs
R
θJC
°C/W
T
J
°C
T
STG
°C
Version: J1512
-
- 55 to +150
I
R
0.57 0.65 0.82
5
--
Note 2: Pulse test with PW=300μs, 1% duty cycle
MBRF
735
MBRF
745
MBRF
750
MBRF
760
MBRF
790
MBRF
7100
Voltage rate of change (Rated V
R
)10000
Storage temperature range
15 10
0.75 0.92
0.1
Note 1: tp = 2.0 μs, 1.0KHz
- 55 to +175
Typical thermal resistance 7
Operating junction temperature range
mA
-
Peak forward surge current, 8.3 ms single half
sine-wave superimposed on rated load I
FSM
150 A
Peak repetitive reverse surge current (Note 1)
V
Maximum instantaneous forward voltage (Note 2)
I
F
=7.5A, T
J
=25°C
I
F
=7.5A, T
J
=125°C
I
F
=15A, T
J
=25°C
I
F
=15A, T
J
=125°C
V
F
1.0 0.5
Peak repetitive forward current
(Rated V
R
, Square wave, 20KHz) I
FRM
0.84
0.72 -
15 A
Polarity: As marked
Maximum DC blocking voltage
Maximum average forward rectified current 7.5
Maximum repetitive peak reverse voltage
Maximum RMS voltage
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (T
A
=25°C unless otherwise noted)
PARAMETER SYMBOL
Taiwan Semiconductor
7A, 35V - 150V Isolated Schottk
y
Barrier Rectifiers
FEATURES
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
ITO-220AC
Maximum reverse current @ rated V
R
T
J
=25°C
T
J
=125°C
UNIT
MBRF
7150
MECHANICAL DATA
Case: ITO-220AC
Mounting torque: 0.56 Nm max.
Weight: 1.7 g (approximately)
1
2
CREAT BY ART
PART NO.
*: Optional available
PART NO.
(T
A
=25°C unless otherwise noted)
Version: J1512
RATINGS AND CHARACTERISTICS CURVES
Note 1: "xx" defines voltage from 35V (MBRF735) to 150V (MBRF7150)
EXAMPLE
EXAMPLE P/N PART NO.
SUFFIX PACKING CODE PACKING CODE
SUFFIX DESCRIPTION
MBRF7xx
(Note 1) H C0 G ITO-220AC 50 / Tube
MBRF735 - MBRF7150
Taiwan Semiconductor
ORDERING INFORMATION
PART NO.
SUFFIX PACKING CODE PACKING CODE
SUFFIX
(*)
PACKAGE PACKING
HC0 G
AEC-Q101 qualified
Green compound
MBRF760MBRF760HC0G
0
2
4
6
8
10
0 50 100 150
AVERAGE FORWARD CURRENT (A)
CASE TEMPERATURE (oC)
FIG.1 FORWARD CURRENT DERATING CURVE
MBRF735-MBRF745
MBRF750-MBRF7150
Resistive or
inductive load
with heat sink
0
25
50
75
100
125
150
175
1 10 100
PEAK FORWARD SURGE CURRENT (A)
NUMBER OF CYCLES AT 60 Hz
FIG. 2 MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT
8.3ms single half sine wave
0.001
0.01
0.1
1
10
100
0 20 40 60 80 100 120 140
INSTANTANEOUS REVERSE CURRENT (mA)
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
FIG. 4 TYPICAL REVERSE CHARACTERISTICS
MBRF735-MBRF745
MBRF750-MBRF7150
TJ=25°C
TJ=125°C
TJ=75°C
0.01
0.1
1
10
100
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2
INSTANTANEOUS FORWARD CURRENT (A)
FORWARD VOLTAGE (V)
FIG. 3 TYPICAL INSTANTANEOUS FORWARD
CHARACTERISTICS
Pulse width=300μs
1% duty cycle
MBRF735-MBRF745
MBRF750-MBRF760
MBRF790-MBRF7100
MBRF7150
TJ=25°C
TJ=125°C
CREAT BY ART
Min Max Min Max
A 4.30 4.70 0.169 0.185
B 2.50 3.10 0.098 0.122
C 2.30 2.90 0.091 0.114
D 0.46 0.76 0.018 0.030
E 6.30 6.90 0.248 0.272
F 9.60 10.30 0.378 0.406
G 3.00 3.40 0.118 0.134
H 0.00 1.60 0.000 0.063
I 0.95 1.45 0.037 0.057
J 0.50 0.90 0.020 0.035
K 2.40 3.20 0.094 0.126
L 14.80 15.50 0.583 0.610
M - 4.10 - 0.161
N - 1.80 - 0.071
O 12.60 13.80 0.496 0.543
P 4.95 5.20 0.195 0.205
P/N = Specific Device Code
G = Green Compound
YWW = Date Code
F = Factory Code
Version: J1512
MARKING DIAGRAM
MBRF735 - MBRF7150
Taiwan Semiconductor
PACKAGE OUTLINE DIMENSIONS
DIM. Unit (mm) Unit (inch)
ITO-220AC
10
100
1000
10000
0.1 1 10 100
JUNCTION CAPACITANCE (pF) A
REVERSE VOLTAGE (V)
FIG. 5 TYPICAL JUNCTION CAPACITANCE
f=1.0MHz
Vsig=50mVp-p
MBRF735-MBRF745
MBRF750-MBRF760
MBRF790-MBRF7150 0.1
1
10
100
0.01 0.1 1 10 100
TRANSIENT THERMAL IMPEDANCE (°C/W)
T-PULSE DURATION (sITO-220AC )
FIG. 6 TYPICAL TRANSIENT THERMAL
CHARACTERISTICS
CREAT BY ART
assumes no responsibility or liability for any errors or inaccuracies.
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any intellectual property rights is granted by this document. Except as provided in TSC's terms and conditions of
sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty,
relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose,
merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify TSC for any damages resulting from such improper use or sale.
Version: J1512
MBRF735 - MBRF7150
Taiwan Semiconductor
Notice
Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf,
