Order this document by MJE18004D2/D SEMICONDUCTOR TECHNICAL DATA ! ' ! !% !'&#( &,( (%)!)*&( ,!* POWER TRANSISTORS 5 AMPERES 1000 VOLTS 75 WATTS %*(* &##*&( $!**( !& % +!#*!% !!%* %*!)*+(*!&% *,&(" The MJE18004D2 is state-of-art High Speed High gain BIPolar transistor (H2BIP). High dynamic characteristics and lot to lot minimum spread (150 ns on storage time) make it ideally suitable for light ballast applications. Therefore, there is no need to guarantee an hFE window. Main features: * Low Base Drive Requirement * High Peak DC Current Gain (55 Typical) @ IC = 100 mA * Extremely Low Storage Time Min/Max Guarantees Due to the H2BIP Structure which Minimizes the Spread * Integrated Collector-Emitter Free Wheeling Diode * Fully Characterized and Guaranteed Dynamic VCE(sat) * "6 Sigma" Process Providing Tight and Reproductible Parameter Spreads IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIII IIIIIII IIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIII IIIIIII IIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIII IIIIIII IIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIII IIIIIII IIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII It's characteristics make it also suitable for PFC application. CASE 221A-06 TO-220AB MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Sustaining Voltage VCEO 450 Vdc Collector-Base Breakdown Voltage VCBO 1000 Vdc Collector-Emitter Breakdown Voltage VCES 1000 Vdc Emitter-Base Voltage VEBO 12 Vdc Collector Current -- Continuous Collector Current -- Peak (1) IC ICM 5 10 Adc Base Current -- Continuous Base Current -- Peak (1) IB IBM 2 4 Adc *Total Device Dissipation @ TC = 25_C *Derate above 25C PD 75 0.6 Watt W/_C TJ, Tstg - 65 to 150 _C RJC RJA 1.65 62.5 _C/W TL 260 _C Operating and Storage Temperature THERMAL CHARACTERISTICS Thermal Resistance -- Junction to Case Thermal Resistance -- Junction to Ambient Maximum Lead Temperature for Soldering Purposes: 1/8 from case for 5 seconds (1) Pulse Test: Pulse Width = 5 ms, Duty Cycle 10%. Designer's Data for "Worst Case" Conditions -- The Designer's Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit curves -- representing boundaries on device characteristics -- are given to facilitate "worst case" design. Designer's and SWITCHMODE are trademarks of Motorola, Inc. Motorola, Inc. 1995 Motorola Bipolar Power Transistor Device Data 1 MJE18004D2 IIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIII IIII IIII IIII III IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIII IIIIII IIII IIII IIII III IIII IIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIII IIIIII IIII IIII IIII III IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIII IIIIII III IIIIII IIII IIII IIII III IIII IIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIII IIIIII III IIIIII IIII IIII IIII III IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Collector-Emitter Sustaining Voltage (IC = 100 mA, L = 25 mH) VCEO(sus) 450 547 Vdc Collector-Base Breakdown Voltage (ICBO = 1 mA) VCBO 1000 1100 Vdc Emitter-Base Breakdown Voltage (IEBO = 1 mA) VEBO 12 14 Vdc Collector Cutoff Current (VCE = Rated VCEO, IB = 0) ICEO 100 Adc ICES 100 500 100 Adc IEBO 100 Adc OFF CHARACTERISTICS Collector Cutoff Current (VCE = Rated VCES, VEB = 0) Collector Cutoff Current (VCE = 500 V, VEB = 0) @ TC = 25C @ TC = 125C @ TC = 125C Emitter-Cutoff Current (VEB = 10 Vdc, IC = 0) ON CHARACTERISTICS VBE(sat) Base-Emitter Saturation Voltage (IC = 0.8 Adc, IB = 80 mAdc) Vdc @ TC = 25C @ TC = 125C 0.8 0.7 1 0.9 @ TC = 25C @ TC = 125C 0.9 0.8 1 0.9 @ TC = 25C @ TC = 125C 0.38 0.55 0.5 0.75 (IC = 2 Adc, IB = 0.4 Adc) @ TC = 25C @ TC = 125C 0.45 0.75 0.75 1 (IC = 0.8 Adc, IB = 40 mAdc) @ TC = 25C @ TC = 125C 0.9 1.6 1.5 (IC = 1 Adc, IB = 0.2 Adc) @ TC = 25C @ TC = 125C 0.25 0.28 0.5 0.6 (IC = 2 Adc, IB = 0.4 Adc) VCE(sat) Collector-Emitter Saturation Voltage (IC = 0.8 Adc, IB = 80 mAdc) Vdc hFE DC Current Gain (IC = 0.8 Adc, VCE = 1 Vdc) @ TC = 25C @ TC = 125C 15 10 28 14 (IC = 2 Adc, VCE = 1 Vdc) @ TC = 25C @ TC = 125C 6 4 8 6 (IC = 1 Adc, VCE = 2.5 Vdc) @ TC = 25C @ TC = 125C 18 14 28 20 -- DYNAMIC SATURATION VOLTAGE Dynamic Saturation Voltage: Determined 1 s and 3 s respectively after rising IB1 reaches 90% of final IB1 2 IC = 1 Adc IB1 = 100 mA VCC = 300 V IC = 2 Adc IB1 = 0.4 A VCC = 300 V @ 1 s @ TC = 25C @ TC = 125C @ 3 s @ TC = 25C @ TC = 125C 3.1 9 @ 1 s @ TC = 25C @ TC = 125C 11 18 @ 3 s @ TC = 25C @ TC = 125C 1.4 8 VCE(dsat) 9 16 V Motorola Bipolar Power Transistor Device Data MJE18004D2 IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIII IIIII IIIII IIII III IIII IIII IIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIII IIIIIIII IIIII IIIII IIII III IIII IIII IIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIII IIIIIIII IIIII IIIII IIII III IIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIII IIIIIIII IIIII IIIII IIII III IIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Characteristic Symbol Min Typ Max Unit 1.5 V DIODE CHARACTERISTICS VEC Forward Diode Voltage (IEC = 1 Adc) (IEC = 2 Adc) @ TC = 25C @ TC = 125C 0.96 0.72 @ TC = 25C @ TC = 125C 1.15 0.8 tfr Forward Recovery Time (IF = 0.4 Adc, di/dt = 10 A/s) @ TC = 25C (IF = 1 Adc, di/dt = 10 A/s) @ TC = 25C 335 (IF = 2 Adc, di/dt = 10 A/s) @ TC = 25C 335 1.7 ns 440 DYNAMIC CHARACTERISTICS Current Gain Bandwidth (IC = 0.5 Adc, VCE = 10 Vdc, f = 1 MHz) fT 13 MHz Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1 MHz) Cob 60 100 pF Input Capacitance (IC = 0.5 Adc, VCE = 10 Vdc, f = 1 MHz) Cib 450 750 pF 500 750 ns 1.4 s SWITCHING CHARACTERISTICS: Resistive Load (D.C. 10%, Pulse Width = 40 s) Turn-on Time Turn-off Time IC = 2.5 Adc, IB1 = 0.5 Adc IB2 = 1 Adc VCC = 250 Vdc Turn-on Time Turn-off Time IC = 2 Adc, IB1 = 0.4 Adc IB2 = 1 Adc VCC = 300 Vdc Turn-on Time Turn-off Time IC = 2.5 Adc, IB1 = 0.5 Adc IB2 = 0.5 Adc VCC = 300 Vdc @ TC = 25C ton @ TC = 25C toff @ TC = 25C @ TC = 125C ton 100 150 150 ns @ TC = 25C @ TC = 125C toff 1.15 1.6 1.3 s @ TC = 25C @ TC = 125C ton 120 500 150 ns @ TC = 25C @ TC = 125C toff 2.15 s 1.1 1.85 2.6 SWITCHING CHARACTERISTICS: Inductive Load (VCC = 15 V) Fall Time Storage Time Crossover Time IC = 2.5 Adc IB1 = 500 mAdc IB2 = 500 mAdc VZ = 350 V LC = 300 H Fall Time Storage Time Crossover Time IC = 2 Adc IB1 = 400 mAdc IB2 = 400 mAdc VZ = 300 V LC = 200 H Fall Time Storage Time Crossover Time IC = 1 Adc IB1 = 100 mAdc IB2 = 500 mAdc VZ = 300 V LC = 200 H Motorola Bipolar Power Transistor Device Data @ TC = 25C @ TC = 125C tf 130 300 175 ns @ TC = 25C @ TC = 125C ts 2.12 2.6 2.4 s @ TC = 25C @ TC = 125C tc 355 750 500 ns @ TC = 25C @ TC = 125C tf 95 230 150 ns @ TC = 25C @ TC = 125C ts 2.4 s @ TC = 25C @ TC = 125C tc 300 700 450 ns @ TC = 25C @ TC = 125C tf 70 100 90 ns @ TC = 25C @ TC = 125C ts 0.7 1.05 0.9 s @ TC = 25C @ TC = 125C tc 75 160 120 ns 2.1 2.9 3 MJE18004D2 TYPICAL STATIC CHARACTERISTICS 100 100 TJ = - 20C hFE , DC CURRENT GAIN hFE , DC CURRENT GAIN VCE = 1 V TJ = 25C 10 TJ = 125C 1 0.001 0.01 0.1 1 IC, COLLECTOR CURRENT (AMPS) TJ = 125C TJ = - 20C Figure 1. DC Current Gain @ 1 Volt 0.01 0.1 1 IC, COLLECTOR CURRENT (AMPS) 10 Figure 2. DC Current Gain @ 5 Volt 3 10 TJ = 25C 5A 2 4A 3A 2A 1 TJ = 125C IC/IB = 5 VCE , VOLTAGE (VOLTS) VCE , VOLTAGE (VOLTS) TJ = 25C 10 1 0.001 10 VCE = 5 V 1A TJ = 25C 1 TJ = - 20C IC = 500 mA 0 0.01 0.1 1 IB, BASE CURRENT (mA) 0.1 0.001 10 Figure 3. Collector Saturation Region 10 IC/IB = 20 VCE , VOLTAGE (VOLTS) TJ = 125C IC/IB = 10 VCE , VOLTAGE (VOLTS) 10 Figure 4. Collector-Emitter Saturation Voltage 10 1 TJ = 25C 0.1 0.001 TJ = - 20C 0.01 0.1 1 IC, COLLECTOR CURRENT (AMPS) Figure 5. Collector-Emitter Saturation Voltage 4 0.01 0.1 1 IC, COLLECTOR CURRENT (AMPS) 10 TJ = 125C TJ = - 20C 1 TJ = 25C 0.1 0.001 1 0.01 0.1 IC, COLLECTOR CURRENT (AMPS) Figure 6. Collector-Emitter Saturation Voltage Motorola Bipolar Power Transistor Device Data 10 MJE18004D2 TYPICAL STATIC CHARACTERISTICS 10 10 IC/IB = 10 1 VBE , VOLTAGE (VOLTS) VBE , VOLTAGE (VOLTS) IC/IB = 5 TJ = - 20C TJ = 125C 0.1 0.001 TJ = 25C 0.01 0.1 1 IC, COLLECTOR CURRENT (AMPS) 1 TJ = - 20C TJ = 125C 0.1 0.001 10 Figure 7. Base-Emitter Saturation Region 10 10 1 FORWARD DIODE VOLTAGE (VOLTS) IC/IB = 20 VBE , VOLTAGE (VOLTS) 0.01 0.1 1 IC, COLLECTOR CURRENT (AMPS) Figure 8. Base-Emitter Saturation Region 10 TJ = - 20C TJ = 125C 0.1 0.001 TJ = 25C 0.01 0.1 1 IC, COLLECTOR CURRENT (AMPS) 25C 1 125C 0.1 0.01 10 Figure 9. Base-Emitter Saturation Region COLLECTOR EMITTER VOLTAGE (VOLTS) Cib (pF) 1 0.1 REVERSE EMITTER-COLLECTOR CURRENT (AMPS) 10 Figure 10. Forward Diode Voltage 1000 C, CAPACITANCE (pF) TJ = 25C TJ = 25C f(test) = 1 MHz 100 Cob 1200 TC = 25C BVCER @ ICER = 10 mA 1000 800 BVCER(sus) @ ICER = 200 mA, Lc = 25 mH 600 10 1 10 VR, REVERSE VOLTAGE (VOLTS) Figure 11. Capacitance Motorola Bipolar Power Transistor Device Data 100 10 100 BASE-EMITTER RESISTOR () 1000 Figure 12. BVCER = f(RBE) 5 MJE18004D2 TYPICAL SWITCHING CHARACTERISTICS 3200 5 TJ = 125C TJ = 25C 4 IC/IB = 10 1600 800 3 2 1 TJ = 125C TJ = 25C IC/IB = 5 IC/IB = 5 0 0 1 3 2 IC, COLLECTOR CURRENT (AMPS) 4 1 Figure 13. Resistive Switch Time, ton 3 2 IC, COLLECTOR CURRENT (AMPS) 4 IC/IB = 5 IC/IB = 10 3 t, TIME ( s) t, TIME ( s) 3 2 IBon = IBoff VCC = 15 V VZ = 300 V LC = 200 H 1 TJ = 125C TJ = 25C 2 IBon = IBoff VCC = 15 V VZ = 300 V LC = 200 H 1 TJ = 125C TJ = 25C 0 0 0 1 3 2 IC, COLLECTOR CURRENT (AMPS) 0 4 Figure 15. Inductive Storage Time, tsi @ IC/IB = 5 1 3 2 IC, COLLECTOR CURRENT (AMPS) 4 Figure 16. Inductive Storage Time, tsi @ IC/IB = 10 1000 1000 TJ = 125C TJ = 25C IBon = IBoff VCC = 15 V VZ = 300 V LC = 200 H 600 TJ = 125C TJ = 25C IC/IB = 5 800 tc t, TIME (ns) 800 t, TIME (ns) 4 Figure 14. Resistive Switch Time, toff 4 400 tfi 200 IC/IB = 10 IBoff = IBon VCC = 15 V VZ = 300 V LC = 200 H 600 400 200 0 0 0 2 3 IC, COLLECTOR CURRENT (AMPS) 1 Figure 17. Inductive Switching Time, tc & tfi @ IC/IB = 5 6 IBon = IBoff VCC = 300 V PW = 20 s IC/IB = 10 t, TIME ( s) t, TIME (ns) 2400 IBon = IBoff VCC = 300 V PW = 20 s 4 0 2 1 3 IC, COLLECTOR CURRENT (AMPS) Figure 18. Inductive Switching Time, tfi @ IC/IB = 10 Motorola Bipolar Power Transistor Device Data 4 MJE18004D2 TYPICAL SWITCHING CHARACTERISTICS 1600 5 t si , STORAGE TIME (s) 1200 t, TIME (ns) IC/IB = 10 IBoff = IBon VCC = 15 V VZ = 300 V LC = 200 H 800 400 IBon = IBoff VCC = 15 V VZ = 300 V LC = 200 H 4 TJ = 125C TJ = 25C IC = 1 A IC = 2 A 3 TJ = 125C TJ = 25C 0 0 1 2 3 IC, COLLECTOR CURRENT (AMPS) 2 4 0 Figure 19. Inductive Switching, tc @ IC/IB = 10 IBon = IBoff VCC = 15 V VZ = 300 V LC = 200 H IC = 2 A t c , CROSSOVER TIME (ns) t fi , FALL TIME (ns) 15 20 2000 TJ = 125C TJ = 25C IBoff = IBon VCC = 15 V 800 VZ = 300 V LC = 200 H 600 IC = 1 A 400 200 0 1500 TJ = 125C TJ = 25C IC = 2 A 1000 500 IC = 1 A 0 2 4 6 8 10 12 14 hFE, FORCED GAIN 16 18 20 2 8 20 14 hFE, FORCED GAIN Figure 21. Inductive Fall Time Figure 22. Inductive Crossover Time 4 420 IBon = IBoff VCC = 15 V VZ = 300 V LC = 200 H t fr , FORWARD RECOVERY TIME (ns) IB = 50 mA t, TIME ( s) 10 hFE, FORCED GAIN Figure 20. Inductive Storage Time 1000 3 5 2 IB = 100 mA IB = 200 mA IB = 500 mA I = 1 A B 1 0.5 1 1.5 2 2.5 3 IC, COLLECTOR CURRENT (AMPS) 3.5 Figure 23. Inductive Storage Time, tsi Motorola Bipolar Power Transistor Device Data 4 dI/dt = 10 A/s TC = 25C 380 340 300 0 1.5 0.5 1 IF, FORWARD CURRENT (AMP) 2 Figure 24. Forward Recovery Time, TFR 7 MJE18004D2 TYPICAL SWITCHING CHARACTERISTICS 10 VCE IC 9 dyn 1 s 90% IC tfi 8 dyn 3 s tsi 7 VOLTS 6 0V Vclamp 5 10% IC 10% Vclamp tc 4 IB 90% IB 3 1 s 2 IB 90% IB1 1 2 1 3 s 0 0 TIME Figure 25. Dynamic Saturation Voltage Measurements 3 4 TIME 5 6 7 Figure 26. Inductive Switching Measurements VFRM VFR (1.1 VF unless otherwise specified) VF VF tfr 0.1 VF 0 IF 10% IF 0 2 4 6 8 10 Figure 27. tfr Measurements 8 8 Motorola Bipolar Power Transistor Device Data MJE18004D2 TYPICAL SWITCHING CHARACTERISTICS Table 1. Inductive Load Switching Drive Circuit +15 V 1 F 100 3W 150 3W IC PEAK 100 F MTP8P10 VCE PEAK MTP8P10 VCE RB1 MPF930 MUR105 IB1 Iout MPF930 +10 V IB A 50 COMMON V(BR)CEO(sus) L = 10 mH RB2 = VCC = 20 Volts IC(pk) = 100 mA MTP12N10 150 3W 500 F IB2 RB2 MJE210 1 F -Voff Inductive Switching L = 200 H RB2 = 0 VCC = 15 Volts RB1 selected for desired Ib1 RBSOA L = 500 H RB2 = 0 VCC = 15 Volts RB1 selected for desired Ib1 TYPICAL CHARACTERISTICS 6 1 s 10 1 ms 5 ms 10 s DC 1 EXTENDED SOA 0.1 0.01 IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMPS) 100 TC 125C GAIN 5 LC = 2 mH 5 4 3 2 -5 V 1 0V -1.5 V 0 10 100 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 1000 Figure 28. Forward Bias Safe Operating Area Motorola Bipolar Power Transistor Device Data 200 600 400 800 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 1000 Figure 29. Reverse Bias Safe Operating Area 9 MJE18004D2 TYPICAL CHARACTERISTICS POWER DERATING FACTOR 1.0 SECOND BREAKDOWN DERATING 0.8 0.6 0.4 THERMAL DERATING 0.2 0 20 40 60 80 100 120 TC, CASE TEMPERATURE (C) 140 160 Figure 30. Forward Bias Power Derating There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC-VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 28 is based on T C = 25C; T J (pk) is variable depending on power level. Second breakdown pulse limits are valid for duty cycles to 10% but must be derated when TC > 25C. Second breakdown limitations do not derate the same as thermal limitations. Allowable current at the voltages shown on Figure 28 may be found at any case temperature by using the appropriate curve on Figure 30. TJ(pk) may be calculated from the data in Figure 31. At any case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. For inductive loads, high voltage and current must be sustained simultaneously during turn-off with the base-to-emitter junction reverse biased. The safe level is specified as a reverse- biased safe operating area (Figure 29). This rating is verified under clamped conditions so that the device is never subjected to an avalanche mode. TYPICAL THERMAL RESPONSE r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) 1 0.5 0.2 0.1 0.1 P(pk) 0.05 0.02 t1 SINGLE PULSE 0.01 0.01 t2 DUTY CYCLE, D = t1/t2 0.1 1 10 RJC(t) = r(t) RJC RJC = 2.5C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TC = P(pk) RJC(t) 100 1000 t, TIME (ms) Figure 31. Typical Thermal Response (ZJC(t)) for MJE18004D2 10 Motorola Bipolar Power Transistor Device Data MJE18004D2 PACKAGE DIMENSIONS -T- B SEATING PLANE C F T S 4 DIM A B C D F G H J K L N Q R S T U V Z A Q 1 2 3 U H K Z L R V NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. J G D N INCHES MIN MAX 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.035 0.142 0.147 0.095 0.105 0.110 0.155 0.018 0.025 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 --- --- 0.080 STYLE 1: PIN 1. 2. 3. 4. MILLIMETERS MIN MAX 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.88 3.61 3.73 2.42 2.66 2.80 3.93 0.46 0.64 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 --- --- 2.04 BASE COLLECTOR EMITTER COLLECTOR CASE 221A-06 TO-220AB ISSUE Y Motorola Bipolar Power Transistor Device Data 11 MJE18004D2 Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters can and do vary in different applications. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. 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