MJE18004D2 - Motorola / Freescale Semiconductor

Motorola Bipolar Power Transistor Device Data





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The MJE18004D2 is state–of–art High Speed High gain BIPolar transistor (H2BIP).

High dynamic characteristics and lot to lot minimum spread (±150 ns on storage time)

make it ideally suitable for light ballast applications. Therefore, there is no need to

guarantee an hFE window.

Main features:

•Low Base Drive Requirement

•High Peak DC Current Gain (55 Typical) @ IC = 100 mA

•Extremely Low Storage Time Min/Max Guarantees Due to the

H2BIP Structure which Minimizes the Spread

•Integrated Collector–Emitter Free Wheeling Diode

•Fully Characterized and Guaranteed Dynamic VCE(sat)

•“6 Sigma” Process Providing Tight and Reproductible Parameter Spreads

It’s characteristics make it also suitable for PFC application.

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

MAXIMUM RATINGS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Rating

ÎÎÎÎÎÎÎ

Symbol

ÎÎÎÎÎÎÎÎ

Value

ÎÎÎÎ

Unit

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector–Emitter Sustaining Voltage

ÎÎÎÎÎÎÎ

VCEO

ÎÎÎÎÎÎÎÎ

450

ÎÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector–Base Breakdown Voltage

ÎÎÎÎÎÎÎ

VCBO

ÎÎÎÎÎÎÎÎ

1000

ÎÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector–Emitter Breakdown Voltage

ÎÎÎÎÎÎÎ

VCES

ÎÎÎÎÎÎÎÎ

1000

ÎÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Emitter–Base Voltage

ÎÎÎÎÎÎÎ

VEBO

ÎÎÎÎÎÎÎÎ

ÎÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector Current — Continuous

Collector Current — Peak (1)

ÎÎÎÎÎÎÎ

ICM

ÎÎÎÎÎÎÎÎ

ÎÎÎÎ

Adc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Base Current — Continuous

Base Current — Peak (1)

ÎÎÎÎÎÎÎ

IBM

ÎÎÎÎÎÎÎÎ

ÎÎÎÎ

Adc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

*Total Device Dissipation @ TC = 25

*Derate above 25°C

ÎÎÎÎÎÎÎ

ÎÎÎÎÎÎÎÎ

0.6

ÎÎÎÎ

Watt

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Operating and Storage Temperature

ÎÎÎÎÎÎÎ

TJ, Tstg

ÎÎÎÎÎÎÎÎ

–65 to 150

ÎÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

THERMAL CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Thermal Resistance — Junction to Case

Thermal Resistance — Junction to Ambient

ÎÎÎÎÎÎÎ

RθJC

RθJA

ÎÎÎÎÎÎÎÎ

1.65

62.5

ÎÎÎÎ

C/W

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Maximum Lead Temperature for Soldering Purposes:

1/8″ from case for 5 seconds

ÎÎÎÎÎÎÎ

ÎÎÎÎÎÎÎÎ

260

ÎÎÎÎ

(1) Pulse Test: Pulse Width = 5 ms, Duty Cycle ≤ 10%.

Designer’s Data for “W orst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit

curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.

Designer’s and SWITCHMODE are trademarks of Motorola, Inc.



SEMICONDUCTOR TECHNICAL DATA Order this document

by MJE18004D2/D

 Motorola, Inc. 1995



POWER TRANSISTORS

5 AMPERES

1000 VOLTS

75 WATTS

CASE 221A–06

TO–220AB

MJE18004D2

2 Motorola Bipolar Power Transistor Device Data

ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Characteristic

ÎÎÎÎ

Symbol

ÎÎÎÎ

Min

ÎÎÎÎ

Typ

ÎÎÎ

Max

ÎÎÎÎ

Unit

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

OFF CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector–Emitter Sustaining Voltage

(IC = 100 mA, L = 25 mH)

ÎÎÎÎ

VCEO(sus)

ÎÎÎÎ

450

ÎÎÎÎ

547

ÎÎÎ

ÎÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector–Base Breakdown Voltage

(ICBO = 1 mA)

ÎÎÎÎ

VCBO

ÎÎÎÎ

1000

ÎÎÎÎ

1100

ÎÎÎ

ÎÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Emitter–Base Breakdown Voltage

(IEBO = 1 mA)

ÎÎÎÎ

VEBO

ÎÎÎÎ

ÎÎÎ

ÎÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector Cutoff Current

(VCE = Rated VCEO, IB = 0)

ÎÎÎÎ

ICEO

ÎÎÎÎ

ÎÎÎ

100

ÎÎÎÎ

µAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector Cutoff Current (VCE = Rated VCES, VEB = 0)

Collector Cutoff Current (VCE = 500 V, VEB = 0)

ÎÎÎÎÎÎ

@ TC = 25°C

@ TC = 125°C

ÎÎÎÎ

ICES

ÎÎÎÎ

ÎÎÎ

100

500

100

ÎÎÎÎ

µAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Emitter–Cutoff Current

(VEB = 10 Vdc, IC = 0)

ÎÎÎÎ

IEBO

ÎÎÎÎ

ÎÎÎ

100

ÎÎÎÎ

µAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ON CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Base–Emitter Saturation Voltage

(IC = 0.8 Adc, IB = 80 mAdc)

ÎÎÎÎÎÎ

@ TC = 25°C

@ TC = 125°C

ÎÎÎÎ

VBE(sat)

ÎÎÎÎ

0.8

0.7

ÎÎÎ

0.9

ÎÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

(IC = 2 Adc, IB = 0.4 Adc)

ÎÎÎÎÎÎ

@ TC = 25°C

@ TC = 125°C

ÎÎÎÎ

0.9

0.8

ÎÎÎ

0.9

ÎÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector–Emitter Saturation Voltage

(IC = 0.8 Adc, IB = 80 mAdc)

ÎÎÎÎÎÎ

@ TC = 25°C

@ TC = 125°C

ÎÎÎÎ

VCE(sat)

ÎÎÎÎ

0.38

0.55

ÎÎÎ

0.5

0.75

ÎÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

(IC = 2 Adc, IB = 0.4 Adc)

ÎÎÎÎÎÎ

@ TC = 25°C

@ TC = 125°C

ÎÎÎÎ

0.45

0.75

ÎÎÎ

0.75

ÎÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

(IC = 0.8 Adc, IB = 40 mAdc)

ÎÎÎÎÎÎ

@ TC = 25°C

@ TC = 125°C

ÎÎÎÎ

0.9

1.6

ÎÎÎ

1.5

ÎÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

(IC = 1 Adc, IB = 0.2 Adc)

ÎÎÎÎÎÎ

@ TC = 25°C

@ TC = 125°C

ÎÎÎÎ

0.25

0.28

ÎÎÎ

0.5

0.6

ÎÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

DC Current Gain

(IC = 0.8 Adc, VCE = 1 Vdc)

ÎÎÎÎÎÎ

@ TC = 25°C

@ TC = 125°C

ÎÎÎÎ

hFE

ÎÎÎÎ

ÎÎÎ

ÎÎÎÎ

—

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

(IC = 2 Adc, VCE = 1 Vdc)

ÎÎÎÎÎÎ

@ TC = 25°C

@ TC = 125°C

ÎÎÎÎ

ÎÎÎ

ÎÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

(IC = 1 Adc, VCE = 2.5 Vdc)

ÎÎÎÎÎÎ

@ TC = 25°C

@ TC = 125°C

ÎÎÎÎ

ÎÎÎ

ÎÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

DYNAMIC SATURATION VOLTAGE

ÎÎÎÎÎÎÎÎ

Dynamic Saturation

Voltage:

Determined 1 µs and

3 µs respectively after

rising IB1 reaches

90% of final IB1

ÎÎÎÎÎÎ

IC = 1 Adc

IB1 = 100 mA

VCC = 300 V

ÎÎÎ

@ 1 µs

ÎÎÎÎÎÎ

@ TC = 25°C

@ TC = 125°C

ÎÎÎÎ

VCE(dsat)

ÎÎÎÎ

ÎÎÎ

ÎÎÎÎ

ÎÎÎÎÎÎÎÎ

Dynamic Saturation

Voltage:

Determined 1 µs and

3 µs respectively after

rising IB1 reaches

90% of final IB1

ÎÎÎÎÎÎ

IB1 = 100 mA

VCC = 300 V

ÎÎÎ

@ 3 µs

ÎÎÎÎÎÎ

@ TC = 25°C

@ TC = 125°C

ÎÎÎÎ

3.1

ÎÎÎ

ÎÎÎÎ

ÎÎÎÎÎÎÎÎ

µs and

3 µs respectively after

rising IB1 reaches

90% of final IB1

ÎÎÎÎÎÎ

IC = 2 Adc

IB1 = 0.4 A

VCC = 300 V

ÎÎÎ

@ 1 µs

ÎÎÎÎÎÎ

@ TC = 25°C

@ TC = 125°C

ÎÎÎÎ

ÎÎÎ

ÎÎÎÎ

ÎÎÎÎÎÎÎÎ

90% of final IB1

ÎÎÎÎÎÎ

IB1 = 0.4 A

VCC = 300 V

ÎÎÎ

@ 3 µs

ÎÎÎÎÎÎ

@ TC = 25°C

@ TC = 125°C

ÎÎÎÎ

1.4

ÎÎÎ

ÎÎÎÎ

MJE18004D2

Motorola Bipolar Power Transistor Device Data

ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Characteristic

ÎÎÎÎÎ

Symbol

ÎÎÎÎ

Min

ÎÎÎ

Typ

ÎÎÎÎ

Max

ÎÎÎÎ

Unit

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

DIODE CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Forward Diode Voltage

(IEC = 1 Adc)

ÎÎÎÎÎ

@ TC = 25°C

@ TC = 125°C

ÎÎÎÎÎ

VEC

ÎÎÎÎ

ÎÎÎ

0.96

0.72

ÎÎÎÎ

1.5

ÎÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

(IEC = 2 Adc)

ÎÎÎÎÎ

@ TC = 25°C

@ TC = 125°C

ÎÎÎÎÎ

ÎÎÎÎ

ÎÎÎ

1.15

0.8

ÎÎÎÎ

1.7

ÎÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Forward Recovery Time

(IF = 0.4 Adc, di/dt = 10 A/µs)

ÎÎÎÎÎ

@ TC = 25°C

ÎÎÎÎÎ

tfr

ÎÎÎÎ

ÎÎÎ

440

ÎÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

(IF = 1 Adc, di/dt = 10 A/µs)

ÎÎÎÎÎ

@ TC = 25°C

ÎÎÎÎÎ

ÎÎÎÎ

ÎÎÎ

335

ÎÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

(IF = 2 Adc, di/dt = 10 A/µs)

ÎÎÎÎÎ

@ TC = 25°C

ÎÎÎÎÎ

ÎÎÎÎ

ÎÎÎ

335

ÎÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

DYNAMIC CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Current Gain Bandwidth

(IC = 0.5 Adc, VCE = 10 Vdc, f = 1 MHz)

ÎÎÎÎÎ

ÎÎÎÎ

ÎÎÎ

ÎÎÎÎ

MHz

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Output Capacitance

(VCB = 10 Vdc, IE = 0, f = 1 MHz)

ÎÎÎÎÎ

Cob

ÎÎÎÎ

ÎÎÎ

ÎÎÎÎ

100

ÎÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Input Capacitance

(IC = 0.5 Adc, VCE = 10 Vdc, f = 1 MHz)

ÎÎÎÎÎ

Cib

ÎÎÎÎ

ÎÎÎ

450

ÎÎÎÎ

750

ÎÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

SWITCHING CHARACTERISTICS: Resistive Load (D.C. ≤ 10%, Pulse Width = 40 µs)

ÎÎÎÎÎÎÎÎ

Turn–on Time

ÎÎÎÎÎÎÎÎ

IC = 2.5 Adc, IB1 = 0.5 Adc

IB2 = 1 Adc

VCC = 250 Vdc

ÎÎÎÎÎ

@ TC = 25°C

ÎÎÎÎÎ

ton

ÎÎÎÎ

ÎÎÎ

500

ÎÎÎÎ

750

ÎÎÎÎ

ÎÎÎÎÎÎÎÎ

Turn–off Time

ÎÎÎÎÎÎÎÎ

IB2 = 1 Adc

VCC = 250 Vdc

ÎÎÎÎÎ

@ TC = 25°C

ÎÎÎÎÎ

toff

ÎÎÎÎ

1.1

ÎÎÎ

ÎÎÎÎ

1.4

ÎÎÎÎ

µs

ÎÎÎÎÎÎÎÎ

Turn–on Time

ÎÎÎÎÎÎÎÎ

IC = 2 Adc, IB1 = 0.4 Adc

IB2 = 1 Adc

VCC = 300 Vdc

ÎÎÎÎÎ

@ TC = 25°C

@ TC = 125°C

ÎÎÎÎÎ

ton

ÎÎÎÎ

ÎÎÎ

100

150

ÎÎÎÎ

150

ÎÎÎÎ

ÎÎÎÎÎÎÎÎ

Turn–off Time

ÎÎÎÎÎÎÎÎ

IB2 = 1 Adc

VCC = 300 Vdc

ÎÎÎÎÎ

@ TC = 25°C

@ TC = 125°C

ÎÎÎÎÎ

toff

ÎÎÎÎ

ÎÎÎ

1.15

1.6

ÎÎÎÎ

1.3

ÎÎÎÎ

µs

ÎÎÎÎÎÎÎÎ

Turn–on Time

ÎÎÎÎÎÎÎÎ

IC = 2.5 Adc, IB1 = 0.5 Adc

IB2 = 0.5 Adc

VCC = 300 Vdc

ÎÎÎÎÎ

@ TC = 25°C

@ TC = 125°C

ÎÎÎÎÎ

ton

ÎÎÎÎ

ÎÎÎ

120

500

ÎÎÎÎ

150

ÎÎÎÎ

ÎÎÎÎÎÎÎÎ

Turn–off Time

ÎÎÎÎÎÎÎÎ

IB2 = 0.5 Adc

VCC = 300 Vdc

ÎÎÎÎÎ

@ TC = 25°C

@ TC = 125°C

ÎÎÎÎÎ

toff

ÎÎÎÎ

1.85

ÎÎÎ

2.6

ÎÎÎÎ

2.15

ÎÎÎÎ

µs

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

SWITCHING CHARACTERISTICS: Inductive Load (VCC = 15 V)

ÎÎÎÎÎÎÎÎ

Fall Time

ÎÎÎÎÎÎÎÎ

IC = 2.5 Adc

IB1 = 500 mAdc

IB2 = 500 mAdc

VZ = 350 V

LC = 300 µH

ÎÎÎÎÎ

@ TC = 25°C

@ TC = 125°C

ÎÎÎÎÎ

ÎÎÎÎ

ÎÎÎ

130

300

ÎÎÎÎ

175

ÎÎÎÎ

ÎÎÎÎÎÎÎÎ

Storage Time

ÎÎÎÎÎÎÎÎ

C = 2.5 Adc

IB1 = 500 mAdc

IB2 = 500 mAdc

VZ = 350 V

LC = 300 µH

ÎÎÎÎÎ

@ TC = 25°C

@ TC = 125°C

ÎÎÎÎÎ

ÎÎÎÎ

ÎÎÎ

2.12

2.6

ÎÎÎÎ

2.4

ÎÎÎÎ

µs

ÎÎÎÎÎÎÎÎ

Crossover Time

ÎÎÎÎÎÎÎÎ

VZ = 350 V

LC = 300 µH

ÎÎÎÎÎ

@ TC = 25°C

@ TC = 125°C

ÎÎÎÎÎ

ÎÎÎÎ

ÎÎÎ

355

750

ÎÎÎÎ

500

ÎÎÎÎ

ÎÎÎÎÎÎÎÎ

Fall Time

ÎÎÎÎÎÎÎÎ

IC = 2 Adc

IB1 = 400 mAdc

IB2 = 400 mAdc

VZ = 300 V

LC = 200 µH

ÎÎÎÎÎ

@ TC = 25°C

@ TC = 125°C

ÎÎÎÎÎ

ÎÎÎÎ

ÎÎÎ

230

ÎÎÎÎ

150

ÎÎÎÎ

ÎÎÎÎÎÎÎÎ

Storage Time

ÎÎÎÎÎÎÎÎ

C = 2 Adc

IB1 = 400 mAdc

IB2 = 400 mAdc

VZ = 300 V

LC = 200 µH

ÎÎÎÎÎ

@ TC = 25°C

@ TC = 125°C

ÎÎÎÎÎ

ÎÎÎÎ

2.1

ÎÎÎ

2.9

ÎÎÎÎ

2.4

ÎÎÎÎ

µs

ÎÎÎÎÎÎÎÎ

Crossover Time

ÎÎÎÎÎÎÎÎ

VZ = 300 V

LC = 200 µH

ÎÎÎÎÎ

@ TC = 25°C

@ TC = 125°C

ÎÎÎÎÎ

ÎÎÎÎ

ÎÎÎ

300

700

ÎÎÎÎ

450

ÎÎÎÎ

ÎÎÎÎÎÎÎÎ

Fall Time

ÎÎÎÎÎÎÎÎ

IC = 1 Adc

IB1 = 100 mAdc

IB2 = 500 mAdc

VZ = 300 V

LC = 200 µH

ÎÎÎÎÎ

@ TC = 25°C

@ TC = 125°C

ÎÎÎÎÎ

ÎÎÎÎ

ÎÎÎ

100

ÎÎÎÎ

ÎÎÎÎÎÎÎÎ

Storage Time

ÎÎÎÎÎÎÎÎ

C = 1 Adc

IB1 = 100 mAdc

IB2 = 500 mAdc

VZ = 300 V

LC = 200 µH

ÎÎÎÎÎ

@ TC = 25°C

@ TC = 125°C

ÎÎÎÎÎ

ÎÎÎÎ

ÎÎÎ

0.7

1.05

ÎÎÎÎ

0.9

ÎÎÎÎ

µs

ÎÎÎÎÎÎÎÎ

Crossover Time

ÎÎÎÎÎÎÎÎ

VZ = 300 V

LC = 200 µH

ÎÎÎÎÎ

@ TC = 25°C

@ TC = 125°C

ÎÎÎÎÎ

ÎÎÎÎ

ÎÎÎ

160

ÎÎÎÎ

120

ÎÎÎÎ

MJE18004D2

4 Motorola Bipolar Power Transistor Device Data

TYPICAL STATIC CHARACTERISTICS

Figure 1. DC Current Gain @ 1 Volt

100

11010.10.010.001 IC, COLLECTOR CURRENT (AMPS)

hFE, DC CURRENT GAIN

TJ = 125

TJ = 25

TJ = –20

VCE = 1 V

Figure 2. DC Current Gain @ 5 Volt

100

11010.10.010.001 IC, COLLECTOR CURRENT (AMPS)

hFE, DC CURRENT GAIN

TJ = 125

TJ = –20

VCE = 5 V

Figure 3. Collector Saturation Region

01010.10.01 IB, BASE CURRENT (mA)

IC = 500 mA

Figure 4. Collector–Emitter Saturation Voltage

0.1 1010.10.010.001 IC, COLLECTOR CURRENT (AMPS)

TJ = 125

TJ = 25

TJ = –20

IC/IB = 5

VCE, VOLTAGE (VOLTS)

TJ = 25

1 A

5 A

Figure 5. Collector–Emitter Saturation Voltage

0.1 100.10.010.001 IC, COLLECTOR CURRENT (AMPS)

Figure 6. Collector–Emitter Saturation Voltage

0.1 100.10.010.001 IC, COLLECTOR CURRENT (AMPS)

TJ = 125

TJ = –20

VCE, VOLTAGE (VOLTS)

IC/IB = 10 TJ = 125

TJ = –20

IC/IB = 20

4 A

3 A

2 A

TJ = 25

CTJ = 25

MJE18004D2

Motorola Bipolar Power Transistor Device Data

TYPICAL STATIC CHARACTERISTICS

Figure 7. Base–Emitter Saturation Region

0.1 100.10.010.001 IC, COLLECTOR CURRENT (AMPS)

Figure 8. Base–Emitter Saturation Region

0.1 100.10.010.001 IC, COLLECTOR CURRENT (AMPS)

TJ = 125

TJ = –20

VBE, VOLTAGE (VOLTS)

TJ = 125

CTJ = 25

TJ = –20

IC/IB = 10

IC/IB = 5

Figure 9. Base–Emitter Saturation Region

0.1 100.10.010.001 IC, COLLECTOR CURRENT (AMPS)

Figure 10. Forward Diode Voltage

0.1 100.10.01 REVERSE EMITTER–COLLECTOR CURRENT (AMPS)

125

VBE, VOLTAGE (VOLTS)

FORWARD DIODE VOLTAGE (VOLTS)

TJ = 125

TJ = –20

IC/IB = 20

Figure 11. Capacitance

1000

10 100101 VR, REVERSE VOLTAGE (VOLTS)

C, CAPACITANCE (pF)

100

Cib (pF)

Cob

TJ = 25

f(test) = 1 MHz

Figure 12. BVCER = f(RBE)

1200

600 100010010 BASE–EMITTER RESISTOR (

Ω

)

COLLECTOR EMITTER VOLTAGE (VOLTS)

TC = 25

BVCER @ ICER = 10 mA

1000

800 BVCER(sus) @

ICER = 200 mA,

Lc = 25 mH

TJ = 25

MJE18004D2

6 Motorola Bipolar Power Transistor Device Data

TYPICAL SWITCHING CHARACTERISTICS

Figure 13. Resistive Switch Time, ton

3200

1IC, COLLECTOR CURRENT (AMPS)

t, TIME (ns)

2400

1600

800

TJ = 125

TJ = 25

IC/IB = 10

IC/IB = 5

IBon = IBoff

VCC = 300 V

PW = 20

Figure 14. Resistive Switch Time, toff

0431 IC, COLLECTOR CURRENT (AMPS)

Figure 15. Inductive Storage Time,

tsi @ IC/IB = 5

0410 IC, COLLECTOR CURRENT (AMPS)

t, TIME ( s)

1TJ = 125

TJ = 25

IC/IB = 10

IC/IB = 5

IBon = IBoff

VCC = 300 V

PW = 20

TJ = 125

TJ = 25

IBon = IBoff

VCC = 15 V

VZ = 300 V

LC = 200

Figure 16. Inductive Storage Time,

tsi @ IC/IB = 10

IC/IB = 5

0410 IC, COLLECTOR CURRENT (AMPS)

t, TIME ( s)

TJ = 125

TJ = 25

IBon = IBoff

VCC = 15 V

VZ = 300 V

LC = 200

IC/IB = 10

Figure 17. Inductive Switching Time,

tc & tfi @ IC/IB = 5

1000

0410 IC, COLLECTOR CURRENT (AMPS)

t, TIME (ns)

800

600

200

TJ = 125

TJ = 25

400

IBon = IBoff

VCC = 15 V

VZ = 300 V

LC = 200

IC/IB = 5

Figure 18. Inductive Switching Time,

tfi @ IC/IB = 10

1000

0410 IC, COLLECTOR CURRENT (AMPS)

t, TIME (ns)

800

600

200

TJ = 125

TJ = 25

400

IBoff = IBon

VCC = 15 V

VZ = 300 V

LC = 200

IC/IB = 10

tfi

MJE18004D2

Motorola Bipolar Power Transistor Device Data

, STORAGE TIME (t si

TYPICAL SWITCHING CHARACTERISTICS

Figure 19. Inductive Switching, tc @ IC/IB = 10

1600

800

0420 IC, COLLECTOR CURRENT (AMPS)

t, TIME (ns)

1200

TJ = 125

TJ = 25

400

1 3

IC/IB = 10

IBoff = IBon

VCC = 15 V

VZ = 300 V

LC = 200

Figure 20. Inductive Storage Time

2200 hFE, FORCED GAIN

5 10 15

TJ = 125

TJ = 25

IC = 2 A

IBon = IBoff

VCC = 15 V

VZ = 300 V

LC = 200

IC = 1 A

Figure 21. Inductive Fall Time

1000

02082 hFE, FORCED GAIN

Figure 22. Inductive Crossover Time

2000

500

02082 hFE, FORCED GAIN

1500

1000

600

tfi, FALL TIME (ns)

tc, CROSSOVER TIME (ns)

800

400

200

4 6 10 12

TJ = 125

TJ = 25

IBoff = IBon

VCC = 15 V

VZ = 300 V

LC = 200

IBon = IBoff

VCC = 15 V

VZ = 300 V

LC = 200

TJ = 125

TJ = 25

14 16 18

IC = 1 A

IC = 2 A

IC = 1 A

Figure 23. Inductive Storage Time, tsi

140.5 IC, COLLECTOR CURRENT (AMPS)

1.51

IBon = IBoff

VCC = 15 V

VZ = 300 V

LC = 200

t, TIME ( s)

2 2.5 3 3.5

IB = 50 mA

IB = 100 mA

IB = 200 mA

IB = 500 mA IB = 1 A

Figure 24. Forward Recovery Time, TFR

420

300 210.50 IF, FORWARD CURRENT (AMP)

dI/dt = 10 A/

TC = 25

1.5

tfr, FORWARD RECOVERY TIME (ns)

380

340

MJE18004D2

8 Motorola Bipolar Power Transistor Device Data

0820 6

1 3 5 7

Vclamp

tsi

tfi

90% IC

10% IC

90% IB1

10% Vclamp

VCE

0 V

90% IB

dyn 1

dyn 3

Figure 25. Dynamic Saturation

Voltage Measurements

TIME

VOLTS

Figure 26. Inductive Switching Measurements

TYPICAL SWITCHING CHARACTERISTICS

Figure 27. tfr Measurements

1060

2 84

VFR (1.1 VF unless otherwise specified)

VFRM

tfr VF

0.1 VF

10% IF

TIME

MJE18004D2

Motorola Bipolar Power Transistor Device Data

TYPICAL SWITCHING CHARACTERISTICS

Table 1. Inductive Load Switching Drive Circuit

V(BR)CEO(sus)

L = 10 mH

RB2 =

∞

VCC = 20 Volts

IC(pk) = 100 mA

Inductive Switching

L = 200

RB2 = 0

VCC = 15 Volts

RB1 selected for

desired Ib1

RBSOA

L = 500

RB2 = 0

VCC = 15 Volts

RB1 selected for

desired Ib1

+15 V

F150

Ω

3 W

100

Ω

3 W

MPF930

+10 V

Ω

COMMON

–Voff

500

MPF930

MTP8P10

MUR105

MJE210 MTP12N10

MTP8P10

150

Ω

3 W

100

Iout

RB2

RB1

IC PEAK

VCE PEAK

VCE

IB1

IB2

TYPICAL CHARACTERISTICS

Figure 28. Forward Bias Safe Operating Area

100

0.01 100010 VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)

Figure 29. Reverse Bias Safe Operating Area

01000200 VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)

100 600

0.1

IC, COLLECTOR CURRENT (AMPS)

5 ms 1 ms 10

EXTENDED

SOA 3

10 V –1.5 V

–5 V

≤

125

GAIN

≥

LC = 2 mH

10 5

400 800

MJE18004D2

10 Motorola Bipolar Power Transistor Device Data

TYPICAL CHARACTERISTICS

POWER DERATING FACTOR

Figure 30. Forward Bias Power Derating

There are two limitations on the power handling ability of

a transistor: average junction temperature and second

breakdown. Safe operating area curves indicate IC–VCE

limits of the transistor that must be observed for reliable

operation; i.e., the transistor must not be subjected to

greater dissipation than the curves indicate. The data of

Figure 28 is based on TC = 25°C; TJ(pk) is variable

depending on power level. Second breakdown pulse limits

are valid for duty cycles to 10% but must be derated when

TC > 25°C. Second breakdown limitations do not derate the

same as thermal limitations. Allowable current at the

voltages shown on Figure 28 may be found at any case

temperature by using the appropriate curve on Figure 30.

TJ(pk) may be calculated from the data in Figure 31. At

any case temperatures, thermal limitations will reduce the

power that can be handled to values less than the

limitations imposed by second breakdown. For inductive

loads, high voltage and current must be sustained simulta-

neously during turn–off with the base–to–emitter junction

reverse biased. The safe level is specified as a reverse–

biased safe operating area (Figure 29). This rating is

verified under clamped conditions so that the device is

never subjected to an avalanche mode.

TC, CASE TEMPERATURE (

1.0

0.8

0.6

0.4

0.2

016014012010080604020

SECOND

BREAKDOWN

DERATING

THERMAL

DERATING

Figure 31. Typical Thermal Response (ZθJC(t)) for MJE18004D2

TYPICAL THERMAL RESPONSE

0.01 100.10.01 t, TIME (ms)

0.1

1 100 1000

r(t), TRANSIENT THERMAL RESISTANCE

(NORMALIZED)

JC(t) = r(t) R

JC = 2.5

C/W MAX

D CURVES APPLY FOR POWER

PULSE TRAIN SHOWN

READ TIME AT t1

TJ(pk) – TC = P(pk) R

JC(t)

P(pk)

t1t2

DUTY CYCLE, D = t1/t2

0.05

SINGLE PULSE

0.5

0.2

0.1

0.02

MJE18004D2

Motorola Bipolar Power Transistor Device Data

PACKAGE DIMENSIONS

CASE 221A–06

TO–220AB

ISSUE Y

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. DIMENSION Z DEFINES A ZONE WHERE ALL

BODY AND LEAD IRREGULARITIES ARE

ALLOWED.

STYLE 1:

PIN 1. BASE

2. COLLECTOR

3. EMITTER

4. COLLECTOR

DIM MIN MAX MIN MAX

MILLIMETERSINCHES

A0.570 0.620 14.48 15.75

B0.380 0.405 9.66 10.28

C0.160 0.190 4.07 4.82

D0.025 0.035 0.64 0.88

F0.142 0.147 3.61 3.73

G0.095 0.105 2.42 2.66

H0.110 0.155 2.80 3.93

J0.018 0.025 0.46 0.64

K0.500 0.562 12.70 14.27

L0.045 0.060 1.15 1.52

N0.190 0.210 4.83 5.33

Q0.100 0.120 2.54 3.04

R0.080 0.110 2.04 2.79

S0.045 0.055 1.15 1.39

T0.235 0.255 5.97 6.47

U0.000 0.050 0.00 1.27

V0.045 ––– 1.15 –––

Z––– 0.080 ––– 2.04

1 2 3

SEATING

PLANE

–T–

MJE18004D2

12 Motorola Bipolar Power Transistor Device Data

How to reach us:

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the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit,

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MJE18004D2/D

*MJE18004D2/D*

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