RF & Protection Devices
Data Sheet
Revision 1.1, 2012-11-07
BFP420F
Low Noise Silicon Bipolar RF Transistor
Edition 2012-11-07
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2013 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions or
characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any
information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties
and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights
of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please contact the nearest
Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information on the types in
question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with the express written
approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure
of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support
devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may
be endangered.
BFP420F
Data Sheet 3 Revision 1.1, 2012-11-07
Trademarks of Infineon Technologies AG
AURIX™, C166™, CanPAK™, CIPOS™, CIPURSE™, EconoPACK™, CoolMOS™, CoolSET™,
CORECONTROL™, CROSSAVE™, DAVE™, DI-POL™, EasyPIM™, EconoBRIDGE™, EconoDUAL™,
EconoPIM™, EconoPACK™, EiceDRIVER™, eupec™, FCOS™, HITFET™, HybridPACK™, I²RF™,
ISOFACE™, IsoPACK™, MIPAQ™, ModSTACK™, my-d™, NovalithIC™, OptiMOS™, ORIGA™,
POWERCODE™; PRIMARION™, PrimePACK™, PrimeSTACK™, PRO-SIL™, PROFET™, RASIC™,
ReverSave™, SatRIC™, SIEGET™, SINDRION™, SIPMOS™, SmartLEWIS™, SOLID FLASH™, TEMPFET™,
thinQ!™, TRENCHSTOP™, TriCore™.
Other Trademarks
Advance Design System™ (ADS) of Agilent Technologies, AMBA™, ARM™, MULTI-ICE™, KEIL™,
PRIMECELL™, REALVIEW™, THUMB™, µVision™ of ARM Limited, UK. AUTOSAR™ is licensed by AUTOSAR
development partnership. Bluetooth™ of Bluetooth SIG Inc. CAT-iq™ of DECT Forum. COLOSSUS™,
FirstGPS™ of Trimble Navigation Ltd. EMV™ of EMVCo, LLC (Visa Holdings Inc.). EPCOS™ of Epcos AG.
FLEXGO™ of Microsoft Corporation. FlexRay™ is licensed by FlexRay Consortium. HYPERTERMINAL™ of
Hilgraeve Incorporated. IEC™ of Commission Electrotechnique Internationale. IrDA™ of Infrared Data
Association Corporation. ISO™ of INTERNATIONAL ORGANIZATION FOR STANDARDIZATION. MATLAB™ of
MathWorks, Inc. MAXIM™ of Maxim Integrated Products, Inc. MICROTEC™, NUCLEUS™ of Mentor Graphics
Corporation. MIPI™ of MIPI Alliance, Inc. MIPS™ of MIPS Technologies, Inc., USA. muRata™ of MURATA
MANUFACTURING CO., MICROWAVE OFFICE™ (MWO) of Applied Wave Research Inc., OmniVision™ of
OmniVision Technologies, Inc. Openwave™ Openwave Systems Inc. RED HAT™ Red Hat, Inc. RFMD™ RF
Micro Devices, Inc. SIRIUS™ of Sirius Satellite Radio Inc. SOLARIS™ of Sun Microsystems, Inc. SPANSION™
of Spansion LLC Ltd. Symbian™ of Symbian Software Limited. TAIYO YUDEN™ of Taiyo Yuden Co.
TEAKLITE™ of CEVA, Inc. TEKTRONIX™ of Tektronix Inc. TOKO™ of TOKO KABUSHIKI KAISHA TA. UNIX™
of X/Open Company Limited. VERILOG™, PALLADIUM™ of Cadence Design Systems, Inc. VLYNQ™ of Texas
Instruments Incorporated. VXWORKS™, WIND RIVER™ of WIND RIVER SYSTEMS, INC. ZETEX™ of Diodes
Zetex Limited.
Last Trademarks Update 2011-11-11
BFP420F, Low Noise Silicon Bipolar RF Transistor
Revision History: 2012-11-07, Revision 1.1
Previous Revision: Rev. 1.0
Page Subjects (major changes since last revision)
This datasheet replaces the revision from 2012-01-30.
The product itself has not been changed and the device characteristics remain unchanged.
Only the product description and information available in the datasheet has been expanded and
updated.
BFP420F
Table of Contents
Data Sheet 4 Revision 1.1, 2012-11-07
Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
List of Figures . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
List of Tables . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
1Product Brief . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
2Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
3 Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
4 Thermal Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
5 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
5.1 DC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
5.2 General AC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
5.3 Frequency Dependent AC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
5.4 Characteristic DC Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
5.5 Characteristic AC Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
6 Simulation Data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28
7 Package Information TSFP-4-1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29
Table of Contents
BFP420F
List of Figures
Data Sheet 5 Revision 1.1, 2012-11-07
Figure 4-1 Total Power Dissipation Ptot = f (Ts) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Figure 5-1 BFP420F Testing Circuit. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Figure 5-2 Collector Current vs. Collector Emitter Voltage IC = f (VCE), IB = Parameter in μA . . . . . . . . . . . . 18
Figure 5-3 DC Current Gain hFE = f (IC), VCE = 3 V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
Figure 5-4 Collector Current vs. Base Emitter Voltage IC = f (VBE), VCE = 3 V. . . . . . . . . . . . . . . . . . . . . . . . . 19
Figure 5-5 Base Current vs. Base Emitter Forward Voltage IB = f (VBE), VCE = 3 V . . . . . . . . . . . . . . . . . . . . 19
Figure 5-6 Base Current vs. Base Emitter Reverse Voltage IB = f (VEB), VCE = 3 V . . . . . . . . . . . . . . . . . . . . 20
Figure 5-7 Collector Emitter Breakdown Voltage VCER = f (RBE), IC = 1 mA. . . . . . . . . . . . . . . . . . . . . . . . . . . 20
Figure 5-8 Transition Frequency fT = f (IC), f = 2 GHz, VCE = Parameter in V . . . . . . . . . . . . . . . . . . . . . . . . . 21
Figure 5-9 3rd Order Intercept Point OIP3 = f (IC), ZS = ZL= 50 Ω, VCE, f = Parameters . . . . . . . . . . . . . . . . . 21
Figure 5-10 3rd Order Intercept Point at output OIP3 [dBm]= f (IC, VCE), ZS = ZL= 50 Ω, f = 1900 MHz . . . . . . 22
Figure 5-11 Compression Point at output OP1dB [dBm]= f (IC, VCE), ZS = ZL= 50 Ω, f = 1900 MHz. . . . . . . . . . 22
Figure 5-12 Collector Base Capacitance CCB = f (VCB), f = 1 MHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23
Figure 5-13 Gain Gma, Gms, IS21I² = f (f), VCE = 3 V, IC = 15 mA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23
Figure 5-14 Maximum Power Gain Gmax = f (IC), VCE = 3 V, f = Parameter in GHz . . . . . . . . . . . . . . . . . . . . . . 24
Figure 5-15 Maximum Power Gain Gmax = f (VCE), IC = 15 mA, f = Parameter in GHz . . . . . . . . . . . . . . . . . . . 24
Figure 5-16 Input Matching S11 = f (f), VCE = 3 V, IC = 4 / 15 / 40 mA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25
Figure 5-17 Source Impedance for Minimum Noise Figure Zopt = f (f), VCE = 3 V, IC = 4 / 15 mA . . . . . . . . . . . 25
Figure 5-18 Output Matching S22 = f (f), VCE = 3 V, IC = 4 / 15 / 40 mA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26
Figure 5-19 Noise Figure NFmin = f (f), VCE = 3 V, IC = 4 / 16 mA, ZS = Zopt . . . . . . . . . . . . . . . . . . . . . . . . . . . 26
Figure 5-20 Noise Figure NFmin = f (IC), VCE = 3 V, ZS = Zopt, f = Parameter in GHz. . . . . . . . . . . . . . . . . . . . . 27
Figure 5-21 Noise Figure NF50 = f (IC), VCE = 3 V, ZS = 50 Ω, f = Parameter in GHz . . . . . . . . . . . . . . . . . . . . 27
Figure 7-1 Package Outline . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29
Figure 7-2 Package Footprint. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29
Figure 7-3 Marking Description (Marking BFP420F: AMs) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29
Figure 7-4 Tape Dimensions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29
List of Figures
BFP420F
List of Tables
Data Sheet 6 Revision 1.1, 2012-11-07
Table 3-1 Maximum Ratings at TA = 25 °C (unless otherwise specified) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Table 4-1 Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Table 5-1 DC Characteristics at TA = 25 °C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Table 5-2 General AC Characteristics at TA = 25 °C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Table 5-3 AC Characteristics, f= 150 MHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Table 5-4 AC Characteristics, f= 450 MHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Table 5-5 AC Characteristics, f= 900 MHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Table 5-6 AC Characteristics, f= 1500 MHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Table 5-7 AC Characteristics, f= 1900 MHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Table 5-8 AC Characteristics, f= 2400 MHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Table 5-9 AC Characteristics, f= 3500 MHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
Table 5-10 AC Characteristics, f= 5500 MHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
List of Tables
BFP420F
Product Brief
Data Sheet 7 Revision 1.1, 2012-11-07
1 Product Brief
The BFP420F is a low noise wideband NPN bipolar RF transistor. The collector design supports voltages up to
VCEO = 4.5 V and currents up to IC = 60 mA. The device is especially suited for mobile applications in which low
power consumption is a key requirement. The typical transition frequency is approximately 25 GHz, hence the
device offers high power gain at frequencies up to 4.5 GHz in amplifier applications. The device is housed in a thin
small flat plastic package with visible leads.
BFP420F
Features
Data Sheet 8 Revision 1.1, 2012-11-07
2 Features
Applications
As Low Noise Amplifier (LNA) in
• Satellite communication systems: Navigation systems (GPS, Glonass), satellite radio (SDARs, DAB)
• Multimedia applications such as mobile/portable TV, CATV, FM Radio
• ISM applications like RKE, AMR and Zigbee, as well as for emerging wireless applications
As discrete active mixer in RF Frontends
As active device in discrete oscillators
Attention: ESD (Electrostatic discharge) sensitive device, observe handling precautions
• General purpose low noise NPN bipolar RF transistor
• Based on Infineon´s reliable very high volume 25 GHz
silicon bipolar technology
• 0.95 dB minimum noise figure typical at 900 MHz, 3 V, 4 mA
• 16.5 dB maximum gain (Gma) typical at 2.4 GHz, 3 V, 15 mA
• 28 dBm OIP3 typical at 2.4 GHz, 4 V, 40 mA
• 16.5 dBm OP1dB typical at 2.4 GHz, 4 V, 40 mA
• Popular in discrete oscillators
• Thin, small, flat, Pb-free (RoHS compliant) and Halogen-free
package with visible leads
• Qualification report according to AEC-Q101 available
Product Name Package Pin Configuration Marking
BFP420F TSFP-4-1 1 = B 2 = E 3 = C 4 = E AMs
BFP420F
Maximum Ratings
Data Sheet 9 Revision 1.1, 2012-11-07
3 Maximum Ratings
Attention: Stresses above the max. values listed here may cause permanent damage to the device.
Exposure to absolute maximum rating conditions for extended periods may affect device
reliability. Maximum ratings are absolute ratings; exceeding only one of these values may
cause irreversible damage to the integrated circuit.
Table 3-1 Maximum Ratings at TA = 25 °C (unless otherwise specified)
Parameter Symbol Values Unit Note / Test Condition
Min. Max.
Collector emitter voltage VCEO
–
–
4.5
4.1
V Open base
TA = 25 °C
TA = -55 °C
Collector base voltage VCBO – 15 V Open emitter
Collector emitter voltage VCES – 15 V E-B short circuited
Emitter base voltage VEBO – 1.5 V Open collector
Base current IB–9 mA–
Collector current IC–60 mA–
Total power dissipation1)
1) TS is the soldering point temperature. TS is measured on the emitter lead at the soldering point of the pcb.
Ptot –210mWTS ≤ 100 °C
Junction temperature TJ–150°C–
Storage temperature TStg -55 150 °C –
BFP420F
Thermal Characteristics
Data Sheet 10 Revision 1.1, 2012-11-07
4 Thermal Characteristics
Figure 4-1 Total Power Dissipation Ptot = f (Ts)
Table 4-1 Thermal Resistance
Parameter Symbol Values Unit Note / Test Condition
Min. Typ. Max.
Junction - soldering point1)
1)For the definition of RthJS please refer to Application Note AN077 (Thermal Resistance Calculation)
RthJS –240–K/W–
0 25 50 75 100 125 150
0
20
40
60
80
100
120
140
160
180
200
220
240
260
TS [°C]
Ptot [mW]
BFP420F
Electrical Characteristics
Data Sheet 11 Revision 1.1, 2012-11-07
5 Electrical Characteristics
5.1 DC Characteristics
5.2 General AC Characteristics
Table 5-1 DC Characteristics at TA = 25 °C
Parameter Symbol Values Unit Note / Test Condition
Min. Typ. Max.
Collector emitter breakdown voltage V(BR)CEO 4.5 5.5 – V IC=1mA, IB=0
Open base
Collector emitter leakage current ICES –
–
–
1
10
30
μA
nA
VCE =15 V, VBE =0
VCE =3 V, VBE =0
E-B short circuited
Collector base leakage current ICBO –130nAVCB =3 V, IE=0
Open emitter
Emitter base leakage current IEBO – 10 100 nA VEB = 0.5 V, IC=0
Open collector
DC current gain hFE 60 95 130 VCE =4V, IC= 5 mA
Pulse measured
Table 5-2 General AC Chara cteri st ic s at TA = 25 °C
Parameter Symbol Values Unit Note / Test Condition
Min. Typ. Max.
Transition frequency fT18 25 – GHz VCE =3V, IC=30mA
f=2 GHz
Collector base capacitance CCB – 0.15 0.3 pF VCB =2V, VBE =0
f=1MHz
Emitter grounded
Collector emitter capacitance CCE –0.46–pFVCE =2V, VBE =0
f=1MHz
Base grounded
Emitter base capacitance CEB –0.55–pFVEB =0.5V, VCB =0
f=1MHz
Collector grounded
BFP420F
Electrical Characteristics
Data Sheet 12 Revision 1.1, 2012-11-07
5.3 Frequency Dependent AC Characteristics
Measurement setup is a test fixture with Bias T’s in a 50 Ω system, TA = 25 °C
Figure 5-1 BFP420F Testing Circuit
Table 5-3 AC Characteristics, f= 150 MHz
Parameter Symbol Values Unit Note / Test Condition
Min. Typ. Max.
Maximum Power Gain
@ low noise operating point
@ recommended trade off oper. point
@ max. linearity operating point
Gms
Gms
Gms
–
–
–
30
34.5
37
–
–
–
dB ZS = ZSoptG, ZL = ZLoptG
VCE = 3 V, IC = 4 mA
VCE = 3V, IC = 15 mA
VCE = 4V, IC = 40 mA
Transducer Gain
@ low noise operating point
@ recommended trade off oper. point
@ max. linearity operating point
S21
S21
S21
–
–
–
22
30
33
–
–
–
dB ZS = ZL = 50 Ω
VCE = 3 V, IC = 4 mA
VCE = 3V, IC = 15 mA
VCE = 4V, IC = 40 mA
Noise Figure
@ low noise operating point
Minimum noise figure
Associated gain
@ recommended trade off oper. point
Minimum noise figure
Associated gain
NFmin
Gass
NFmin
Gass
–
–
–
–
0.9
24
1.4
29
–
–
–
–
dB ZS = ZSoptN
VCE = 3V, IC = 4mA
VCE = 3V, IC = 15 mA
Linearity
@ recommended trade off oper. point
3rd order intercept point at output
1 dB gain compression point at output
@ max. linearity operating point
3rd order intercept point at output
1 dB gain compression point at output
OIP3
OP1dB
OIP3
OP1dB
–
–
–
21
7
25
15.5
–
–
–
–
dB ZS = ZL = 50 Ω
VCE = 3V, IC = 15 mA
VCE = 4V, IC = 40 mA
OUT
IN
Bias -T
Bias-T
B
(Pin 1)
EC
E
VC
Top View
VB
BFP420F
Electrical Characteristics
Data Sheet 13 Revision 1.1, 2012-11-07
Table 5-4 AC Characteristics, f= 450 MHz
Parameter Symbol Values Unit Note / Test Condition
Min. Typ. Max.
Maximum Power Gain
@ low noise operating point
@ recommended trade off oper. point
@ max. linearity operating point
Gms
Gms
Gms
–
–
–
25
29
31
–
–
–
dB ZS = ZSoptG, ZL = ZLoptG
VCE = 3 V, IC = 4 mA
VCE = 3V, IC = 15 mA
VCE = 4V, IC = 40 mA
Transducer Gain
@ low noise operating point
@ recommended trade off oper. point
@ max. linearity operating point
S21
S21
S21
–
–
–
21
27
28.5
–
–
–
dB ZS = ZL = 50 Ω
VCE = 3 V, IC = 4 mA
VCE = 3V, IC = 15 mA
VCE = 4V, IC = 40 mA
Noise Figure
@ low noise operating point
Minimum noise figure
Associated gain
@ recommended trade off oper. point
Minimum noise figure
Associated gain
NFmin
Gass
NFmin
Gass
–
–
–
–
0.9
22.5
1.4
27
–
–
–
–
dB ZS = ZSoptN
VCE = 3V, IC = 4mA
VCE = 3V, IC = 15 mA
Linearity
@ recommended trade off oper. point
3rd order intercept point at output
1 dB gain compression point at output
@ max. linearity operating point
3rd order intercept point at output
1 dB gain compression point at output
OIP3
OP1dB
OIP3
OP1dB
–
–
–
21.5
8
26.5
16.5
–
–
–
–
dB ZS = ZL = 50 Ω
VCE = 3V, IC = 15 mA
VCE = 4V, IC = 40 mA
Table 5-5 AC Characteristics, f= 900 MHz
Parameter Symbol Values Unit Note / Test Condition
Min. Typ. Max.
Maximum Power Gain
@ low noise operating point
@ recommended trade off oper. point
@ max. linearity operating point
Gms
Gms
Gms
–
–
–
22
25
26.5
–
–
–
dB ZS = ZSoptG, ZL = ZLoptG
VCE = 3 V, IC = 4 mA
VCE = 3V, IC = 15 mA
VCE = 4V, IC = 40 mA
Transducer Gain
@ low noise operating point
@ recommended trade off oper. point
@ max. linearity operating point
S21
S21
S21
–
–
–
19
23
24
–
–
–
dB ZS = ZL = 50 Ω
VCE = 3 V, IC = 4 mA
VCE = 3V, IC = 15 mA
VCE = 4V, IC = 40 mA
BFP420F
Electrical Characteristics
Data Sheet 14 Revision 1.1, 2012-11-07
Noise Figure
@ low noise operating point
Minimum noise figure
Associated gain
@ recommended trade off oper. point
Minimum noise figure
Associated gain
NFmin
Gass
NFmin
Gass
–
–
–
–
0.95
20
1.4
23
–
–
–
–
dB ZS = ZSoptN
VCE = 3V, IC = 4mA
VCE = 3V, IC = 15 mA
Linearity
@ recommended trade off oper. point
3rd order intercept point at output
1 dB gain compression point at output
@ max. linearity operating point
3rd order intercept point at output
1 dB gain compression point at output
OIP3
OP1dB
OIP3
OP1dB
–
–
–
23.5
8
27.5
17
–
–
–
–
dB ZS = ZL = 50 Ω
VCE = 3V, IC = 15 mA
VCE = 4V, IC = 40 mA
Table 5-6 AC Characteristics, f= 1500 MHz
Parameter Symbol Values Unit Note / Test Condition
Min. Typ. Max.
Maximum Power Gain
@ low noise operating point
@ recommended trade off oper. point
@ max. linearity operating point
Gms
Gms
Gma
–
–
–
19
22
22
–
–
–
dB ZS = ZSoptG, ZL = ZLoptG
VCE = 3 V, IC = 4 mA
VCE = 3V, IC = 15 mA
VCE = 4V, IC = 40 mA
Transducer Gain
@ low noise operating point
@ recommended trade off oper. point
@ max. linearity operating point
S21
S21
S21
–
–
–
16
19
19,5
–
–
–
dB ZS = ZL = 50 Ω
VCE = 3 V, IC = 4 mA
VCE = 3V, IC = 15 mA
VCE = 4V, IC = 40 mA
Noise Figure
@ low noise operating point
Minimum noise figure
Associated gain
@ recommended trade off oper. point
Minimum noise figure
Associated gain
NFmin
Gass
NFmin
Gass
–
–
–
–
1
16.5
1.5
19
–
–
–
–
dB ZS = ZSoptN
VCE = 3V, IC = 4mA
VCE = 3V, IC = 15 mA
Linearity
@ recommended trade off oper. point
3rd order intercept point at output
1 dB gain compression point at output
@ max. linearity operating point
3rd order intercept point at output
1 dB gain compression point at output
OIP3
OP1dB
OIP3
OP1dB
–
–
–
–
22.5
7
27.5
16
–
–
–
–
dB ZS = ZL = 50 Ω
VCE = 3V, IC = 15 mA
VCE = 4V, IC = 40 mA
Table 5-5 AC Characteristics, f= 900 MHz (cont’d)
Parameter Symbol Values Unit Note / Test Condition
Min. Typ. Max.
BFP420F
Electrical Characteristics
Data Sheet 15 Revision 1.1, 2012-11-07
Table 5-7 AC Characteristics, f= 1900 MHz
Parameter Symbol Values Unit Note / Test Condition
Min. Typ. Max.
Maximum Power Gain
@ low noise operating point
@ recommended trade off oper. point
@ max. linearity operating point
Gms
Gma
Gma
–
–
–
18
19.5
19
–
–
–
dB ZS = ZSoptG, ZL = ZLoptG
VCE = 3 V, IC = 4 mA
VCE = 3V, IC = 15 mA
VCE = 4V, IC = 40 mA
Transducer Gain
@ low noise operating point
@ recommended trade off oper. point
@ max. linearity operating point
S21
S21
S21
–
–
–
14
16.5
17
–
–
–
dB ZS = ZL = 50 Ω
VCE = 3 V, IC = 4 mA
VCE = 3V, IC = 15 mA
VCE = 4V, IC = 40 mA
Noise Figure
@ low noise operating point
Minimum noise figure
Associated gain
@ recommended trade off oper. point
Minimum noise figure
Associated gain
NFmin
Gass
NFmin
Gass
–
–
–
–
1.1
15
1.5
17
–
–
–
–
dB ZS = ZSoptN
VCE = 3V, IC = 4mA
VCE = 3V, IC = 15 mA
Linearity
@ recommended trade off oper. point
3rd order intercept point at output
1 dB gain compression point at output
@ max. linearity operating point
3rd order intercept point at output
1 dB gain compression point at output
OIP3
OP1dB
OIP3
OP1dB
–
–
–
24
9
28
17
–
–
–
–
dB ZS = ZL = 50 Ω
VCE = 3V, IC = 15 mA
VCE = 4V, IC = 40 mA
Table 5-8 AC Characteristics, f= 2400 MHz
Parameter Symbol Values Unit Note / Test Condition
Min. Typ. Max.
Maximum Power Gain
@ low noise operating point
@ recommended trade off oper. point
@ max. linearity operating point
Gms
Gma
Gma
–
–
–
16.5
16.5
16.5
–
–
–
dB ZS = ZSoptG, ZL = ZLoptG
VCE = 3 V, IC = 4 mA
VCE = 3V, IC = 15 mA
VCE = 4V, IC = 40 mA
Transducer Gain
@ low noise operating point
@ recommended trade off oper. point
@ max. linearity operating point
S21
S21
S21
–
–
–
12
14.5
15
–
–
–
dB ZS = ZL = 50 Ω
VCE = 3 V, IC = 4 mA
VCE = 3V, IC = 15 mA
VCE = 4V, IC = 40 mA
BFP420F
Electrical Characteristics
Data Sheet 16 Revision 1.1, 2012-11-07
Noise Figure
@ low noise operating point
Minimum noise figure
Associated gain
@ recommended trade off oper. point
Minimum noise figure
Associated gain
NFmin
Gass
NFmin
Gass
–
–
–
–
1.2
12.5
1.6
15
–
–
–
–
dB ZS = ZSoptN
VCE = 3V, IC = 4mA
VCE = 3V, IC = 15 mA
Linearity
@ recommended trade off oper. point
3rd order intercept point at output
1 dB gain compression point at output
@ max. linearity operating point
3rd order intercept point at output
1 dB gain compression point at output
OIP3
OP1dB
OIP3
OP1dB
–
–
–
24.5
8.5
28
16.5
–
–
–
–
dB ZS = ZL = 50 Ω
VCE = 3V, IC = 15 mA
VCE = 4V, IC = 40 mA
Table 5-9 AC Characteristics, f= 3500 MHz
Parameter Symbol Values Unit Note / Test Condition
Min. Typ. Max.
Maximum Power Gain
@ low noise operating point
@ recommended trade off oper. point
@ max. linearity operating point
Gma
Gma
Gma
–
–
–
11.5
12.5
13
–
–
–
dB ZS = ZSoptG, ZL = ZLoptG
VCE = 3 V, IC = 4 mA
VCE = 3V, IC = 15 mA
VCE = 4V, IC = 40 mA
Transducer Gain
@ low noise operating point
@ recommended trade off oper. point
@ max. linearity operating point
S21
S21
S21
–
–
–
9
11
11.5
–
–
–
dB ZS = ZL = 50 Ω
VCE = 3 V, IC = 4 mA
VCE = 3V, IC = 15 mA
VCE = 4V, IC = 40 mA
Noise Figure
@ low noise operating point
Minimum noise figure
Associated gain
@ recommended trade off oper. point
Minimum noise figure
Associated gain
NFmin
Gass
NFmin
Gass
–
–
–
–
1.6
10
1.8
11.5
–
–
–
–
dB ZS = ZSoptN
VCE = 3V, IC = 4mA
VCE = 3V, IC = 15 mA
Linearity
@ recommended trade off oper. point
3rd order intercept point at output
1 dB gain compression point at output
@ max. linearity operating point
3rd order intercept point at output
1 dB gain compression point at output
OIP3
OP1dB
OIP3
OP1dB
–
–
–
22
8
26
17
–
–
–
–
dB ZS = ZL = 50 Ω
VCE = 3V, IC = 15 mA
VCE = 4V, IC = 40 mA
Table 5-8 AC Characteristics, f= 2400 MHz (cont’d)
Parameter Symbol Values Unit Note / Test Condition
Min. Typ. Max.
BFP420F
Electrical Characteristics
Data Sheet 17 Revision 1.1, 2012-11-07
Notes
1. Gms = IS21 / S12I for k < 1; Gma = IS21 / S12I(k-(k2-1)1/2) for k > 1
2. In order to get the NFmin values stated in this chapter the test fixture losses have been subtracted from all
measured results.
3. OIP3 value depends on termination of all intermodulation frequency components. Termination used for this
measurement is 50 Ω
from 0.2 MHz to 12 GHz.
Table 5-10 AC Characteristics, f= 5500 MHz
Parameter Symbol Values Unit Note / Test Condition
Min. Typ. Max.
Maximum Power Gain
@ low noise operating point
@ recommended trade off oper. point
@ max. linearity operating point
Gma
Gma
Gma
–
–
–
7.5
8.5
9
–
–
–
dB ZS = ZSoptG, ZL = ZLoptG
VCE = 3 V, IC = 4 mA
VCE = 3V, IC = 15 mA
VCE = 4V, IC = 40 mA
Transducer Gain
@ low noise operating point
@ recommended trade off oper. point
@ max. linearity operating point
S21
S21
S21
–
–
–
5.5
7
8
–
–
–
dB ZS = ZL = 50 Ω
VCE = 3 V, IC = 4 mA
VCE = 3V, IC = 15 mA
VCE = 4V, IC = 40 mA
Noise Figure
@ low noise operating point
Minimum noise figure
Associated gain
@ recommended trade off oper. point
Minimum noise figure
Associated gain
NFmin
Gass
NFmin
Gass
–
–
–
–
2.2
5
2.3
8
–
–
–
–
dB ZS = ZSoptN
VCE = 3V, IC = 4mA
VCE = 3V, IC = 15 mA
Linearity
@ recommended trade off oper. point
3rd order intercept point at output
1 dB gain compression point at output
@ max. linearity operating point
3rd order intercept point at output
1 dB gain compression point at output
OIP3
OP1dB
OIP3
OP1dB
–
–
–
22
8.5
26
17
–
–
–
–
dB ZS = ZL = 50 Ω
VCE = 3V, IC = 15 mA
VCE = 4V, IC = 40 mA
BFP420F
Electrical Characteristics
Data Sheet 18 Revision 1.1, 2012-11-07
5.4 Characteristic DC Diagrams
Figure 5-2 Collector Current vs. Collector Emitter Voltage IC = f (VCE), IB = Parameter in μA
Figure 5-3 DC Current Gain hFE = f (IC), VCE = 3 V
0123456
0
5
10
15
20
25
30
35
40
45
50
55
60
65
IB = 25µA
IB = 75µA
IB = 125µA
IB = 175µA
IB = 225µA
IB = 275µA
IB = 325µA
IB = 375µA
IB = 425µA
IB = 475µA
IB = 525µA
IB = 575µA
IB = 625µA
IB = 675µA
IB = 725µA
VCE [V]
IC [mA]
10−1 100101102
101
102
IC [mA]
hFE
BFP420F
Electrical Characteristics
Data Sheet 19 Revision 1.1, 2012-11-07
Figure 5-4 Collector Current vs. Base Emitter Voltage IC = f (VBE), VCE = 3 V
Figure 5-5 Base Current vs. Base Emitter Forward Voltage IB = f (VBE), VCE = 3 V
0.5 0.6 0.7 0.8 0.9 1
10−5
10−4
10−3
10−2
10−1
100
101
102
VBE [V]
IC [mA]
0.5 0.6 0.7 0.8 0.9 1
10−7
10−6
10−5
10−4
10−3
10−2
10−1
100
VBE [V]
IB [mA]
BFP420F
Electrical Characteristics
Data Sheet 20 Revision 1.1, 2012-11-07
Figure 5-6 Base Current vs. Base Emitter Reverse Voltage IB = f (VEB), VCE = 3 V
Figure 5-7 Collector Emitter Breakdown Voltage VCER = f (RBE), IC = 1 mA
0.3 0.5 0.7 0.9 1.1 1.3 1.5
10−11
10−10
10−9
10−8
10−7
10−6
VEB [V]
IB [A]
104105106107
5
5.5
6
6.5
7
7.5
8
RBE [Ω]
VCER [V]
RBE
B
C
E
BFP420F
Electrical Characteristics
Data Sheet 21 Revision 1.1, 2012-11-07
5.5 Characteristic AC Diagrams
Figure 5-8 Transition Frequency fT = f (IC), f = 2 GHz, VCE = Parameter in V
Figure 5-9 3rd Order Intercept Point OIP3 = f (IC), ZS = ZL= 50 Ω, VCE, f = Parameters
0 10 20 30 40 50 60 70
0
2
4
6
8
10
12
14
16
18
20
22
24
26
28
3.00V
2.00V
1.00V
IC [mA]
fT [GHz]
4.00V
0 10 20 30 40 50 60
−4
−2
0
2
4
6
8
10
12
14
16
18
20
22
24
26
28
30
IC [mA]
OIP3 [dBm]
3V, 900MHz
4V, 900MHz
3V, 1900MHz
4V, 1900MHz
BFP420F
Electrical Characteristics
Data Sheet 22 Revision 1.1, 2012-11-07
Figure 5-10 3rd Order Intercept Point at output OIP3 [dBm]= f (IC, VCE), ZS = ZL= 50 Ω, f = 1900 MHz
Figure 5-11 Compression Point at output OP1dB [dBm]= f (IC, VCE), ZS = ZL= 50 Ω, f = 1900 MHz
12
13
14
14
15
15
16
1
6
17
17
1
7
18
18
18
19
19
19
19
20
20
20
20
20
21
21
21
21
21
22
22
22
22
22
2
3
23
23
23
23
2
4
24
24
24
24
25
25
25
25
25
26
26
26
26
27
27
27
27
28
28
VCE [V]
IC [mA]
1 1.5 2 2.5 3 3.5 4
5
10
15
20
25
30
35
40
45
50
55
60
0
0
0
0
1
1
1
12
2
2
2
3
3
3
3
4
4
4
4
4
5
5
5
5
5
6
6
6
6
6
7
7
7
7
7
7
8
8
8
8
8
9
9
9
9
9
10
10
10
10
10
11
11
11
11
12
12
12
12
13
13
13
13
14
14
14
15
15
15
16
16
17
VCE [V]
IC [mA]
1 1.5 2 2.5 3 3.5 4
5
10
15
20
25
30
35
40
45
50
55
60
BFP420F
Electrical Characteristics
Data Sheet 23 Revision 1.1, 2012-11-07
Figure 5-12 Collector Base Capacitance CCB = f (VCB), f = 1 MHz
Figure 5-13 Gain Gma, Gms, IS21I² = f (f), VCE = 3 V, IC = 15 mA
0 0.5 1 1.5 2 2.5 3 3.5 4
0
0.06
0.12
0.18
0.24
0.3
VCB [V]
CCB [pF]
0123456
0
5
10
15
20
25
30
35
40
f [GHz]
G [dB]
Gms
Gma
|S21|2
BFP420F
Electrical Characteristics
Data Sheet 24 Revision 1.1, 2012-11-07
Figure 5-14 Maximum Power Gain Gmax = f (IC), VCE = 3 V, f = Parameter in GHz
Figure 5-15 Maximum Power Gain Gmax = f (VCE), IC = 15 mA, f = Parameter in GHz
0 10 20 30 40 50 60 70 80
3
6
9
12
15
18
21
24
27
30
33
36
39
5.50GHz
3.50GHz
2.40GHz
1.90GHz
1.50GHz
0.90GHz
0.45GHz
0.15GHz
IC [mA]
G [dB]
0123456
3
6
9
12
15
18
21
24
27
30
33
36
39
5.50GHz
3.50GHz
2.40GHz
1.90GHz
1.50GHz
0.90GHz
0.45GHz
0.15GHz
VCE [V]
G [dB]
BFP420F
Electrical Characteristics
Data Sheet 25 Revision 1.1, 2012-11-07
Figure 5-16 Input Matching S11 = f (f), VCE = 3 V, IC = 4 / 15 / 40 mA
Figure 5-17 Source Impedance for Minimum Noise Figure Zopt = f (f), VCE = 3 V, IC = 4 / 15 mA
10.1 0.2 0.3 0.4 0.5 21.5 3 4 5
0
1
−1
1.5
−1.5
2
−2
3
−3
4
−4
5
−5
10
−10
0.5
−0.5
0.1
−0.1
0.2
−0.2
0.3
−0.3
0.4
−0.4
0.03 to 6 GHz
step: 1 GHz 4 mA
15 mA
40 mA
10.1 0.2 0.3 0.4 0.5 21.5 3 4 5
0
1
−1
1.5
−1.5
2
−2
3
−3
4
−4
5
−5
10
−10
0.5
−0.5
0.1
−0.1
0.2
−0.2
0.3
−0.3
0.4
−0.4
0.45GHz
0.9GHz
1.9GHz
2.4GHz
3.5GHz
Ic = 4.0mA
Ic = 15mA
BFP420F
Electrical Characteristics
Data Sheet 26 Revision 1.1, 2012-11-07
Figure 5-18 Output Matching S22 = f (f), VCE = 3 V, IC = 4 / 15 / 40 mA
Figure 5-19 Noise Figure NFmin = f (f), VCE = 3 V, IC = 4 / 16 mA, ZS = Zopt
10.1 0.2 0.3 0.4 0.5 21.5 3 4 5
0
1
−1
1.5
−1.5
2
−2
3
−3
4
−4
5
−5
10
−10
0.5
−0.5
0.1
−0.1
0.2
−0.2
0.3
−0.3
0.4
−0.4
0.03 to 6 GHz
step: 1 GHz 4 mA
15 mA
40 mA
0 0.5 1 1.5 2 2.5 3 3.5 4
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
f [GHz]
NFmin [dB]
IC = 4mA
IC = 16mA
BFP420F
Electrical Characteristics
Data Sheet 27 Revision 1.1, 2012-11-07
Figure 5-20 Noise Figure NFmin = f (IC), VCE = 3 V, ZS = Zopt, f = Parameter in GHz
Figure 5-21 Noise Figure NF50 = f (IC), VCE = 3 V, ZS = 50 Ω, f = Parameter in GHz
Note:The curves shown in this chapter have been g enerated using typical devices but shall not be considered as
a guarantee that all devices have identical characteristic curves. TA=25°C.
0 5 10 15 20 25 30 35
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
2.2
2.4
2.6
Ic [mA]
NFmin [dB]
f = 0.45GHz
f = 0.9GHz
f = 1.9GHz
f = 2.4GHz
f = 3.5GHz
0 5 10 15 20 25 30 35
0.6
0.8
1
1.2
1.4
1.6
1.8
2
2.2
2.4
2.6
2.8
3
3.2
3.4
Ic [mA]
NF50 [dB]
f = 0.45GHz
f = 0.9GHz
f = 1.9GHz
f = 2.4GHz
f = 3.5GHz
BFP420F
Simulation Data
Data Sheet 28 Revision 1.1, 2012-11-07
6 Simulation Data
For the SPICE Gummel Poon (GP) model as well as for the S-parameters (including noise parameters) please
consult our website and download the latest versions before actually starting your design.
You find the BFP420F SPICE GP model on the official homepage of Infineon RF transistors in MWO- and ADS-
format, which you can import into these circuit simulation tools very quickly and conveniently. The model already
contains the package parasitics and is ready to use for DC- and high frequency simulations. The terminals of the
model circuit correspond to the pin configuration of the device.
The model parameters have been extracted and verified up to 10 GHz using typical devices. The BFP420F SPICE
GP model reflects the typical DC- and RF-performance within the limitations which are given by the SPICE GP
model itself. Besides the DC characteristics all S-parameters in magnitude and phase, as well as noise figure
(including optimum source impedance, equivalent noise resistance and flicker noise) and intermodulation have
been extracted.
BFP420F
Package Information TSFP-4-1
Data Sheet 29 Revision 1.1, 2012-11-07
7 Package Information TSFP-4-1
Figure 7-1 Package Outline
Figure 7-2 Package Footprint
Figure 7-3 Marking Description (Marking BFP420F: AMs)
Figure 7-4 Tape Dimensions
0.35
0.45
0.9
0.5 0.5
TSFP-4-1, -2-FP V04
TSFP-4-1, -2-TP V05
40.2
1.4
8
Pin 1 1.55 0.7
Published by Infineon Technologies AG
www.infineon.com
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