BSR315P
SIPMOS
®
Small-Signal-Transistor
Features
• P-Channel
• Enhancement m
ode
• Logic level
• Footprint and pinn
ing compatible with S
OT-23 / SuperSOT-23 pack
ages
• Avalanche rated
• Pb-free lead finishing; RoHS compliant
• Qualified according to AEC Q101
• Halogen free according to IEC61249
-2-21
Maximum ratings,
at
T
j
=25 °C, unless otherw
ise specified
Parameter
Symbol
Conditions
Unit
Continuous drain current
I
D
T
A
=25 °C
A
T
A
=70 °C
Pulsed drain current
I
D,pulse
T
A
=25 °C
Avalanche energy
, single pulse
E
AS
I
D
=0.62 A,
R
GS
=25
W
mJ
Gate source voltage
V
GS
V
Power dissipati
on
P
tot
T
A
=25 °C
W
Operating and storage temperature
T
j
,
T
stg
°C
ESD class
JESD22-C101
Soldering temperature
IEC climatic category; DIN IE
C 68-1
-0.62
-0.49
0.5
Value
24
-2.48
steady state
55/150/56
-55 ... 150
±20
1A (250V to 500V
)
260 °C
V
DS
-
60
V
R
DS(on),max
0.8
W
I
D
-
0.62
A
Product Summary
Type
Package
Tape and reel inform
ation
Marking
Halogen-free
Packing
BSR315P
PG
-SC59
H6327 = 3000 pc
s. / reel
LB
Yes
Non dry
SC
-
59
Rev 1.06
page 1
2015-07-24
BSR315P
Parameter
Symbol
Conditions
Unit
min.
typ.
max.
Thermal characteristics
Therm
al resistance,
junction - ambient
R
thJA
minim
al footprint,
steady
s
tate
-
-
250
K/W
Electrical characteristics,
at
T
j
=25 °C, unless otherw
ise specified
Static characteristics
Drain-source breakdown voltage
V
(BR)DSS
V
GS
=0 V,
I
D
=-250 µA
-60
-
-
V
Gate threshold voltag
e
V
GS(th)
V
DS
=
V
GS
,
I
D
=-160 µA
-1
-1.5
-2
Zero gate voltage d
rain current
I
DSS
V
DS
=-60 V,
V
GS
=0 V,
T
j
=25 °C
-
-0.1
-1
µA
V
DS
=-60 V,
V
GS
=0 V,
T
j
=150 °C
-
-10
-100
Gate-source leakage current
I
GSS
V
GS
=-20 V,
V
DS
=0 V
-
-10
-100
nA
Drain-source on-state resistance
R
DS(on)
V
GS
=-4.5 V,
I
D
=-0.49 A
-
870
1300
m
W
V
GS
=-10 V,
I
D
=-0.62 A
-
620
800
Transconductance
g
fs
|
V
DS
|
>2|
I
D
|
R
D
S(on)max
,
I
D
=-0.49 A
0.5
0.9
-
S
Values
Rev 1.06
page 2
2015-07-24
BSR315P
Parameter
Symbol
Conditions
Unit
min.
typ.
max.
Dynamic characteristics
2)
Input capacitance
C
iss
-
132
176
pF
Output capacitance
C
oss
-
42
56
Reverse transfer capacitance
C
rss
-
20
30
Turn-on delay
time
t
d(on)
-
8
13
ns
Rise time
t
r
-
28
46
Turn-of
f delay
tim
e
t
d(off)
-
21
32
Fall time
t
f
-
20
30
Gate Charge Characteristics
1),2)
Gate to source charge
Q
gs
-
0.4
0.5
nC
Gate to drain charge
Q
gd
-
2
3
Gate charge total
Q
g
-
4
6
Gate plateau vol
tage
V
plat
eau
-
-3
-
V
Reverse Diode
Diode continuous forward current
I
S
-
-
-0.56
A
Diode pulse current
I
S,pulse
-
-
-2.5
Diode forward voltag
e
V
SD
V
GS
=0 V,
I
F
=-0.62 A
,
T
j
=25 °C
-
-0.82
-1.2
V
Reverse recovery
tim
e
2)
t
rr
-
32
48
ns
Reverse recovery
c
harge
2)
Q
rr
-
29
43
nC
2)
Defined by
design. Not subjected to production test
1)
See figure 1
6 for gate c
harge param
eter defini
tion
T
A
=25 °C
Values
V
GS
=0 V,
V
DS
=-25 V,
f
=1 MHz
V
DD
=-30 V,
V
GS
=-10 V,
I
D
=-0.62 A,
R
G,ext
=6
W
V
DD
=-48 V,
I
D
=-0.62 A,
V
GS
=0 to -
10 V
V
R
=-30 V,
I
F
=|
I
S
|
,
d
i
F
/d
t
=100 A/µs
Rev 1.06
page 3
2015-07-24
BSR315P
1 Power dissipation
2 Drain current
P
tot
=f(
T
A
)
I
D
=f(
T
A
); |
V
GS
|≥10 V
3 Safe operating area
4 Max. transient thermal impedance
I
D
=f(
V
DS
);
T
A
=25 °C
;
D
=0
Z
thJA
=f(
t
p
)
parameter:
t
p
param
eter:
D
=
t
p
/
T
10 µs
100 µs
1 ms
10 m
s
100 m
s
DC
10
-2
10
-1
10
0
10
1
0.1
1
10
100
-I
D
[A]
-V
DS
[V]
limited by on-state
resistance
single
pul
se
0.01
0.02
0.05
0.1
0.2
0.5
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
10
-1
10
0
10
1
10
2
10
3
Z
thJS
[K/W]
t
p
[s]
0
0.1
0.2
0.3
0.4
0.5
0
40
80
120
160
P
tot
[W]
T
A
[
°
C]
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0
40
80
120
160
-I
D
[A]
T
A
[
°
C]
Rev 1.06
page 4
2015-07-24
BSR315P
5 Typ. output characteristics
6 Typ. drain-source on resistance
I
D
=f(
V
DS
);
T
j
=25 °C
R
DS(on)
=f(
I
D
);
T
j
=25 °C
parameter:
V
GS
param
eter:
V
GS
7 Typ. transfer characteristics
8 Typ. forward transconductance
I
D
=f(
V
GS
); |
V
DS
|>
2|
I
D
|
R
DS(on)max
g
fs
=f(
I
D
);
T
j
=25 °C
parameter:
T
j
-3 V
-3.5 V
-4 V
-4.5 V
-5 V
-6 V
-8 V
-10 V
500
600
700
800
900
1000
1100
1200
1300
1400
1500
0
1
2
R
DS(on)
[m
W
]
-I
D
[A]
0
0.5
1
1.5
2
012345
-I
D
[A]
-V
GS
[V]
0
0.5
1
1.5
2
0
0.5
1
1.5
2
2.5
g
fs
[S]
-I
D
[A]
-2.5 V
-3 V
-3.5 V
-4 V
-4.5 V
-6 V
-8 V
-10 V
0
1
2
3
0
1
2
3
4
5
-I
D
[A]
-V
DS
[V]
Rev 1.06
page 5
2015-07-24
BSR315P
9 Drain-source on-state resistance
10 Typ. gate threshold voltage
R
DS(on)
=f(
T
j
);
I
D
=-0.62 A;
V
GS
=-10 V
V
GS(th)
=f(
T
j
);
V
GS
=
V
DS
;
I
D
=-160 µA
11 Typ. capacitances
12 Forward characteristics of reverse diode
C
=f(
V
DS
);
V
GS
=0 V;
f
=1 MHz
I
F
=f(
V
SD
)
parameter:
T
j
typ.
98 %
0
0.2
0.4
0.6
0.8
1
1.2
1.4
-60
-20
20
60
100
140
R
DS(on)
[
W
]
T
j
[
°
C]
Ciss
Coss
Crss
10
1
10
2
10
3
0
20
40
60
C
[pF]
-V
DS
[V]
typ.
min.
max
.
0
0.5
1
1.5
2
2.5
-60
-20
20
60
100
140
-V
GS(th)
[V]
T
j
[
°
C]
25
°C, typ
150
°C, typ
25
°C, 98%
150
°C, 98%
10
-2
10
-1
10
0
10
1
0
0.5
1
1.5
I
F
[A]
-V
SD
[V]
Rev 1.06
page 6
2015-07-24
BSR315P
13 A
valanche characteristics
14 Typ. gate charge
I
AS
=f(
t
AV
);
R
GS
=25
W
V
GS
=f(
Q
ga
te
);
I
D
=-0.62 A pulsed
parameter:
T
j
(start)
parameter:
V
DD
15 Drain-source breakdown voltage
16 Gate charge waveforms
V
BR(DSS)
=f(
T
j
)
;
I
D
=-250 µA
50
55
60
65
70
-60
-20
20
60
100
140
-V
BR(DSS)
[V]
T
j
[
°
C]
V
GS
Q
g
ate
V
g
s(
th
)
Q
g
(
th
)
Q
gs
Q
gd
Q
sw
Q
g
25
°C
100
°C
125
°C
0.1
1
1
10
100
1000
-I
AV
[A]
t
AV
[µs]
12 V
30 V
48 V
0
2
4
6
8
10
12
012345
V
GS
[V]
Q
gate
[nC]
Rev 1.06
page 7
2015-07-24
BSR315P
Package Outline
SC-59: Outline
Footprint
Packaging
Tape
Dimensions in m
m
Rev 1.06
page 8
2015-07-24
BSR315P
Pu
bl
is
he
d
by
In
fi
ne
on
T
ec
hn
o
lo
gi
es
A
G
81726 München, Germ
any
© I
nf
in
eo
n
Te
c
hn
ol
og
ie
s
A
G 2
00
6.
Al
l
Rig
h
ts
Re
s
er
ve
d.
Att
en
ti
o
n
pl
ea
se
!
The informatio
n given i
n this data
sheet sh
all in no e
vent be re
garded as a
guarantee o
f conditi
ons or
characteri
stics (“Be
schaffenh
eitsgaranti
e”). With res
pect to an
y examples
or hints g
iven herei
n, any ty
pical va
lues
stated here
in and/or a
ny information
regarding th
e applic
ation of the
device,
Infineon Te
chnologi
es hereby
disclai
ms any and a
ll warranties
and liab
ilities o
f any ki
nd, inclu
ding without
limitation warra
nties of
non-infring
ement of intell
ectual pro
perty rights
of any th
ird party.
In
fo
rma
ti
on
For further in
formation on tec
hnology,
delivery
terms and con
ditions a
nd prices
please c
ontact y
our nearest
Infineon Te
chnologi
es Office (
ww
w.
in
fi
ne
on
.c
om
).
Wa
rn
in
gs
Due to techn
ical requi
rements compone
nts may con
tain dange
rous subs
tances. Fo
r information o
n the types
in
question p
lease c
ontact yo
ur nearest In
fineon Tec
hnologies
Office.
Infineon Te
chnologi
es Components may
only be
used in l
ife-support
devices
or syste
ms with the ex
press writte
n
approval o
f Infineon T
echnologi
es, if a fa
ilure of su
ch componen
ts can rea
sonably
be expec
ted to caus
e the fail
ure
of that life
-support dev
ice or s
ystem, or to aff
ect the s
afety or effe
ctivenes
s of that
device o
r system. Li
fe support
devices
or syste
ms are intend
ed to be impla
nted in the
human body, o
r to support
and/or maintai
n and sus
tain
and/or protec
t human life.
If they fai
l, it is rea
sonable t
o assume that
the health
of the use
r or other pers
ons may
be endangered.
Rev 1.06
page 9
2015-07-24
Mouser Electronics
Authorized Distributor
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:
BSR315PL6327HTSA1
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