NTE1177 Integrated Circuit TV Luminance Processor Description: The NTE1177 is a monolithic silicon integrated circuit in a 14-Lead DIP type package that performs the luminance processing functions of amplification; contrast, brightness and peaking control; blanking; and black-level clamping. Features: D Black-Level Clamping D Linear DC Controls for Brightness, Contrast, and Peaking D Horizontal and Vertical Blanking D Operates with Standard or Tapped Delay Line Absolute Maximum Ratings; DC Supply Current (Into Pin13, Note 1), VCC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 59.5mA Device Dissipation (Up to TA = +55C, Note 1), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 750mW Derate Above 55C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.9mW/C Operating Ambient Temperature Range, Topr . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -40 to +85C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to +150C Lead Temperature (During Soldering, 1/16" from case, 10sec max), TL . . . . . . . . . . . . . . . . . +265C Note 1. Although the NTE1177 is rated for maximum dissipation of 750mW, it is recommended that the current into Pin13 be limited by external circuit resistance to 39mA for a typical voltage at Pin13 of 11.8V. Electrical Characteristics: (TA = +25C unless otherwise specified) Test Conditions Switch Numbers S1 S2 S3 S4 S5 S6 S7 S8 S9 S10 S11 Switch Positions For Characteristic Measurements Parameter Symbol Static Characteristics (Bias Voltage = 6.1V) Min Typ Max Unit Voltage at Pin13 V13 2 1 1 2 2 4 1 2 2 1 1 11.0 11.8 13.2 V Quiescent Voltage V4 2 1 1 2 2 3 1 2 2 1 1 3.3 4.0 5.7 V V7 2 1 1 2 2 2 1 2 2 1 1 7.1 7.7 8.3 V I13 2 1 1 2 2 3 1 2 2 1 2 10 19 30 mA Current Into Pin13 Pin13 Connected to +11V Electrical Characteristics (Cont'd): (TA = +25C unless otherwise specified) Test Conditions Switch Numbers S1 S2 S3 S4 S5 S6 S7 S8 S9 S10 S11 Switch Positions For Characteristic Measurements Parameter Dynamic Characteristics (Bias Voltage = 5.8V) Min Typ Max Unit Wide-Band Gain (Note 2) 1 1 1 2 1 2 1 1 1 2 1 6.0 8.3 11.0 dB Contrast Gain Reduction (Note 3) 1 1 1 2 1 2 1 1 2 2 1 27 30 - dB Peaking Gain (Note 2) 1 1 2 2 1 2 1 1 1 2 1 Peaking Gain Reduction (Note 4) 1 1 2 2 1 2 1 1 1 2 1 16 18 - dB Max. Intermodulation Distortion 2V (Note 5) 1 - 1 1 1 2 - 2 1 2 1 - 20 - % 1 - 1 1 1 2 - 2 1 2 1 - 40 - % 3V (Note 6) 15.0 18.4 22.0 dB Note 2. Set 50kHz generator for 100mVP-P Adjust R1 Peaking Control for minimum setting. Measure wide-band gain at Pin7. Note 3. Set 50kHz generator for 100mVP-P. Adjust R1 for minimum setting. Measure contrast gain reduction at Pin7. Note 4. Set 50kHz generator for 100mVP-P. Adjust R1 for maximum setting. Measure peaking gain reduction at Pin7. Note 5. Adjust R1 for minimum setting. With S2 at switch position 1 and S7 at switch position 3, set 50kHz generator for 2VP-P. Then with S2 at switch position 2, set 1MHz generator for 100mVP-P. Then with S7 at switch position 2, measure downward modulation of the 1MHz signal due to the 50kHz signal. Note 6. Repeat step 5 except that the 50kHz generator must be set at 3VP-P. 14 8 1 7 Pin Connection Diagram Video Input 1 Peaking Input 3 14 N.C. Regulator 13 Shunt and Bypass 12 Clamp Inhibit Input Video Output 4 11 Peaking Control Substrate GND 5 10 Contrast Control Peaking Input 2 Clamp Inhibit 6 Clamped Video Out 7 .785 (19.95) Max .300 (7.62) .200 (5.08) Max 9 Blanking Input 8 Brightness Control .100 (2.45) .600 (15.24) .099 (2.5) Min