NTE1177
Integrated Circuit
TV Luminance Processor
Description:
The NTE1177 is a monolithic silicon integrated circuit in a 14–Lead DIP type package that performs
the luminance processing functions of amplification; contrast, brightness and peaking control; blank-
ing; and black–level clamping.
Features:
DBlack–Level Clamping
DLinear DC Controls for Brightness, Contrast, and Peaking
DHorizontal and Vertical Blanking
DOperates with Standard or Tapped Delay Line
Absolute Maximum Ratings;
DC Supply Current (Into Pin13, Note 1), VCC 59.5mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Device Dissipation (Up to TA = +55°C, Note 1), PD750mW. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Derate Above 55°C 7.9mW/°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Ambient Temperature Range, Topr –40° to +85°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, Tstg –65° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Lead Temperature (During Soldering, 1/16” from case, 10sec max), TL+265°C. . . . . . . . . . . . . . . . .
Note 1. Although the NTE1177 is rated for maximum dissipation of 750mW, it is recommended that
the current into Pin13 be limited by external circuit resistance to 39mA for a typical voltage
at Pin13 of 11.8V.
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Test Conditions
Switch Numbers
S1 S2 S3 S4 S5 S6 S7 S8 S9 S10 S11
Parameter Symbol Switch Positions
For Characteristic Measurements Min Typ Max Unit
Static Characteristics (Bias Voltage = 6.1V)
Voltage at Pin13 V13 2 1 1 2 2 4 1 2 2 1 1 11.0 11.8 13.2 V
Quiescent Voltage V42 1 1 2 2 3 1 2 2 1 1 3.3 4.0 5.7 V
V72 1 1 2 2 2 1 2 2 1 1 7.1 7.7 8.3 V
Current Into Pin13
Pin13 Connected
to +11V
I13 2 1 1 2 2 3 1 2 2 1 2 10 19 30 mA
Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified)
Test Conditions
Switch Numbers
S1 S2 S3 S4 S5 S6 S7 S8 S9 S10 S11
Parameter Switch Positions
For Characteristic Measurements Min Typ Max Unit
Dynamic Characteristics (Bias Voltage = 5.8V)
Wide–Band Gain (Note 2) 1 1 1 2 1 2 1 1 1 2 1 6.0 8.3 11.0 dB
Contrast Gain Reduction (Note 3) 1 1 1 2 1 2 1 1 2 2 1 27 30 –dB
Peaking Gain (Note 2) 1 1 2 2 1 2 1 1 1 2 1 15.0 18.4 22.0 dB
Peaking Gain Reduction (Note 4) 1 1 2 2 1 2 1 1 1 2 1 16 18 –dB
Max. Intermodulation Distortion
2V (Note 5) 1–1112–2 1 2 1 –20 –%
3V (Note 6) 1–1112–2 1 2 1 –40 –%
Note 2. S et 50kH z g enerator f or 1 00mVP–P A djust R 1 Peaking C ontrol for minimum s etting. M easure
wide–band gain at Pin7.
Note 3. Set 50kHz generator for 100mVP–P. Adjust R1 for minimum setting. Measure contrast gain
reduction at Pin7.
Note 4. Set 50kHz generator for 100mVP–P. Adjust R1 for maximum setting. Measure peaking gain
reduction at Pin7.
Note 5. Adjust R1 for minimum setting. With S2 at switch position 1 and S7 at switch position 3, set
50kHz generator for 2VP–P. Then with S2 at switch position 2, set 1MHz generator for
100mVP–P. Then with S7 at switch position 2, measure downward modulation of the 1MHz
signal due to the 50kHz signal.
Note 6. Repeat step 5 except that the 50kHz generator must be set at 3VP–P.
.600 (15.24)
17
14 8
.300
(7.62)
.200 (5.08)
Max
.100 (2.45) .099 (2.5) Min
.785 (19.95)
Max
Pin Connection Diagram
Blanking Input
Clamp Inhibit Input
Contrast Control
Video Input N.C.
Peaking ControlVideo Output
Peaking Input
Brightness Control
Shunt Regulator
Clamped Video Out
Clamp Inhibit
Substrate GND
Peaking Input
1
2
3
4
5
6
7
14
13
12
11
10
9
8
and Bypass
