PBSS4140U,115 - NEXPERIA

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DATA SH EET

Product data sheet

Supersedes data of 2001 Mar 27

2001 Jul 13

DISCRETE SEMICONDUCTORS

PBSS4140U

40 V low VCEsat NPN transistor

ook, halfpage

M3D102

2001 Jul 13 2

NXP Semiconductors Product data sheet

40 V low VCEsat NPN transistor PBSS4140U

FEATURES

•Low collector-emitter saturation voltage

•High current capa bilities.

•Improved device reliability due to reduced heat

generation.

•Enhanced performance over SOT231A general purpose

packaged transistors.

APPLICATIONS

•General purpose s witc hing and muting

•LCD backlighting

•Supply line switching circuits

•Battery driven equipment (mobile phones, video

cameras and ha nd-held devices ).

DESCRIPTION

NPN low V CEsat transistor in a SOT323 plastic package.

PNP complement: PBSS5140U.

MARKING

QUICK REFERENCE DATA

PINNING

TYPE NUMBER MARKING CODE

PBSS4140U 41t

SYMBOL PARAMETER MAX. UNIT

VCEO collector-emitter voltage 40 V

ICM peak collector current 2 A

RCEsat equivalent on-resistance <500 mΩ

PIN DESCRIPTION

1base

2emitter

3collector

handbook, halfpage

MAM062

Top view

Fig.1 Simplified outline SOT323 and symbo l.

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 60134).

Notes

1. Device mounted on a pr inted-circuit board; single side d copper; tinplated; standard footprint.

2. Device mounted on a printed-circuit board; single sided copper; tinplated ; mou nting pad for collector 1 cm.

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

VCBO collector-bas e v oltage open emitter −40 V

VCEO collector-emitter voltage open base −40 V

VEBO emitter-b as e voltage open collector −5 V

ICcollector current (D C) −1 A

ICM peak collector current −2 A

IBM peak base current −1 A

Ptot total power dissipation Tamb ≤ 25 °C; note 1 −250 mW

Tamb ≤ 25 °C; note 2 −350 mW

Tstg storage temperature −65 +150 °C

Tjjunction temperature −150 °C

Tamb operating ambient temperature −65 +150 °C

2001 Jul 13 3

NXP Semiconductors Pr oduct data shee t

40 V low VCEsat NPN transistor PBSS4140U

THERMAL CHARACTE RISTICS

Notes

1. Device mounted on a printed-circuit board, single sided copper, tinplated and standard footprint.

2. Device mounted on a pr inted-circuit board, single side d copper, tinplated, mounting pad for collector 1 cm2.

CHARACTERISTICS

Tamb = 25 °C unless otherwise specified.

Note

1. Pulse test: tp ≤ 300 μs; δ ≤ 0.02.

SYMBOL PARAMETER CONDITIONS VALUE UNIT

Rth j-a thermal resistance from junction to

ambient in free air; note 1 500 K/W

in free air; note 2 357 K/W

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

ICBO collector-base cut-off

current VCB = 40 V; IC = 0 − − 100 nA

VCB = 40 V; IC = 0; Tamb = 150 °C− − 50 μA

ICEO collector-emitter cut-off

current VCE = 30 V; IB = 0 − − 100 nA

IEBO emitter-b ase cut-off current VEB = 5 V; IC = 0 − − 100 nA

hFE DC current ga in VCE = 5 V; IC = 1 mA 300 − −

VCE = 5 V; IC = 500 mA 300 −900

VCE = 5 V; IC = 1 A 200 − −

VCEsat collecto r-emitter saturation

voltage IC = 100 mA; IB = 1 mA − − 200 mV

IC = 500 mA; IB = 50 mA − − 250 mV

IC = 1 A; IB = 100 mA − − 500 mV

RCEsat equivalent on-resistance IC = 500 mA; IB = 50 mA; note 1 −260 <500 mΩ

VBEsat base-emitter saturation

voltage IC = 1 A; IB = 100 mA − − 1.2 V

VBEon base-emitter turn-o n volt age VCE = 5 V; IC = 1 A − − 1.1 V

fTtransition frequency IC = 50 mA; VCE = 10 V; f = 100 MHz 150 − − MHz

Cccollector capacitance VCB = 10 V; IE = Ie = 0; f = 1 MHz − − 10 pF

2001 Jul 13 4

NXP Semiconductors Pr oduct data shee t

40 V low VCEsat NPN transistor PBSS4140U

handbook, halfpage

1000

200

400

600

800

MLD660

10−11

(1)

10 IC (mA)

hFE

102103104

(3)

(2)

Fig.2 DC current gain as a function of collector

current; ty pical values.

VCE = 5 V.

(1) Tamb = 150 °C.

(2) Tamb = 25 °C.

(3) Tamb = −55 °C.

handbook, halfpage

10−111010

2103104

10−1

MLD656

IC (mA)

VBE

(V)

(1)

(3)

(2)

Fig.3 Base-emitter voltage as a function of

collector current; typical values.

VCE = 5 V.

(1) Tamb = −55 °C.

(2) Tamb = 25 °C.

(3) Tamb = 150 °C.

handbook, halfpage

103

102

MLD657

11010

2IC (mA)

VCEsat

(mV)

103104

(3)

(2)

(1)

Fig.4 Collector-emitter saturation voltage as a

function of collector current; typical values.

IC/IB = 10.

(1) Tamb = 150 °C.

(2) Tamb = 25 °C.

(3) Tamb = −55 °C.

handbook, halfpage

MLD658

102

10−1110 IC (mA)

RCEsat

(Ω)

10−210−310−4

10−1

(3)

(1) (2)

Fig.5 Equivalent on-resistance as a function of

collector current; typical values.

IC/IB = 10.

(1) Tamb = 150 °C.

(2) Tamb = 25 °C.

(3) Tamb = −55 °C.

2001 Jul 13 5

NXP Semiconductors Pr oduct data shee t

40 V low VCEsat NPN transistor PBSS4140U

handbook, halfpage

0 200

(MHz)

IC (mA)

1000

400

300

100

200

400 600 800

MLD659

Fig.6 Transition freque nc y as a function of

collector current; typical values.

VCE = 10 V.

2001 Jul 13 6

NXP Semiconductors Pr oduct data shee t

40 V low VCEsat NPN transistor PBSS4140U

PACKAGE OUTLINE

UNIT A1

max bpcD Ee1HELpQwv

REFERENCES

OUTLINE

VERSION EUROPEAN

PROJECTION ISSUE DATE

IEC JEDEC EIAJ

mm 0.1

1.1

0.8 0.4

0.3 0.25

0.10 2.2

1.8 1.35

1.15 0.65

1.3 2.2

2.0 0.23

0.13 0.20.2

DIMENSIONS (mm are the original dimensions)

0.45

0.15

SOT323 SC-70

detail X

vMA

0 1 2 mm

scale

Plastic surface mounted package; 3 leads SOT32

97-02-28

2001 Jul 13 7

NXP Semiconductors Pr oduct data shee t

40 V low VCEsat NPN transistor PBSS4140U

DATA SHEET STATUS

Notes

1. Please consult the most rec en tly issued document before initiating or co mpleting a design.

2. The product s tatus of device(s) described in this document may have changed since this document was pub lis hed

and may differ in case of multiple devices. The latest product status information is available on th e Internet at

URL http://www.nxp.com.

DOCUMENT

STATUS(1) PRODUCT

STATUS(2) DEFINITION

Objective data sheet Development This document contains data from the objective specification for pro duct

development.

Preliminary data sheet Qualification This document contains data from the preliminary specification.

Product data sheet Production T his document contains the product specification.

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Applications ⎯ Applications that are described herein for

any of these products are for illustrative purposes only.

NXP Semiconductors makes no representation or

warranty that such applications will be suitable for the

specified use witho ut fu rth e r testing or modification .

Limiting values ⎯ Stress above one or more limiting

values (as defined in the Absolute Maximum Ratings

System of IEC 60134) may cause permanent damage to

the device. Limiting values are stress ratings only and

operation of the device at these or any other conditions

above those given in the Characteristics sections of this

document is not implied. Exposure to limiting values for

extended periods may affect device reliability.

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Quick refer ence data ⎯ The Quick reference data is an

extract of th e product data given in the Limiting values an d

Characteristics sections of this docu ment, and as such is

not complete, exhaus tive or legally binding.

NXP Semiconductors

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Customer notification

This data sheet was changed to reflect the new company name NXP Semiconductors. No changes were

made to the content, except for the legal definitions and disclaimers.

Printed in The Netherlands 613514/02/pp8 Date of release: 2001 Jul 13 Document orde r number: 9397 750 08427