DIODE MODULE Spec.No.SR2-SP-10001 R0
P1
MDM800H45E2-H
Target
Specification
FEATURES
∗ Low Reverse Recovery Loss diode module.
∗ Low noise recovery: Ultra soft fast recovery diode.
∗ High reverse recovery capability:
Super HiRC Structure.
∗ High reliability, high durability diodes.
∗ Isolated heat sink (terminal to base).
ABSOLUTE MAXIMUM RATINGS
(TC=25
℃
)
Item Symbol Unit MDM800H45E2-H
Repetitive Peak Reverse Voltage V
RRM
V 4,500
AC peak I
MFpeak
800
Forward Current 1ms I
Fpulse
A 1,600
Junction Temperature Tj
℃
-40
～
+125
Storage Temperature Tstg
℃
-40
～
+125 (1)
Terminals-base V
ISO
8,400 (AC 1 minute)
Isolation Test
Voltage Terminal 1-Terminal 2
V
ISO T-T
V
RMS
8,400 (AC 1 minute)
Terminals (M8) - 10 (2)
Screw Torque Mounting (M6) - N·m 6 (3)
Notes: (1) Terminal temperature shall not exceed the specified temperature in any operation
.
(2) Recommended Value 9±1N·m (3) Recommended Value 5.5±0.5N·m
ELECTRICAL CHARECTERISTICS
Item Symbol
Unit
Min.
Typ.
Max.
Test Conditions
Repetitive Reverse Current I
RRM
mA - 1.4
TBD
VAK=4,500V, Tj=125
℃
Forward Voltage Drop V
F
V TBD
4.2
4.7
IF=800A, Tj=125
℃
Reverse Recovery Time trr µs - 0.9
TBD
Reverse Recovery Loss E
rr(10%)
J/P - 1.8
TBD
V
CC
=2,600V, IF=800A, Ls=190nH
Tj=125
o
C, Rg=4.7
Ω
(4)
PACKAGE CHARECTERISTICS
Item Symbol
Unit
Min.
Typ.
Max.
Test Conditions
Terminal Resistance R
CE
m
Ω
- 0.3
- per arm
Terminal Stray Inductance Ls
CE
nH - 42 - per arm
Thermal Impedance Rth(j-c)
K/W
- - 0.026
Junction to case (per arm)
Comparative tracking index CTI - 600
-
Contact Thermal Impedance
Rth(c-f)
K/W
- 0.007
-
Case to fin (λgrease=1W/(m
･
K),
Heat-sink flatness ≤50um)
Notes:(4) Counter arm; MBN800H45E2-H VGE=+/-15V
R
G
value is the test condition’s value for evaluation of the switching times, not recommended value.
Please, determine the suitable R
G
value after the measurement of switching waveforms
(overshoot voltage, etc.) with appliance mounted.
* Please contact our representatives at order.
* For improvement, specifications are subject to change without notice.
* For actual application, please confirm this spec sheet is the newest revision.
CIRCUIT DIAGRAM
C(K)
E(A)
C(K)
E(A)
OUTLINE DRAWING
Unit in mm
Weight:
1050
(
g
)
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DIODE MODULE Spec.No.SR2-SP-10001 R0
P2
MDM800H45E2-H
Target
Specification
HITACHI POWER SEMICONDUCTORS
For inquiries relating to the products, please contact nearest overseas representatives that is located
“Inquiry” portion on the top page of a home page.
Hitachi power semiconductor home page address
http://www.hitachi.co.jp/products/power/pse/
Notices
1. The information given herein, including the specifications and dimensions, is subject to
change without prior notice to improve product characteristics. Before ordering,
purchasers are advised to contact Hitachi sales department
for the latest version of this
data sheets.
2.
Please be sure to read "Precautions for Safe Use and Notices" in the individual brochure
before use.
3.
In cases where extremely high reliability is required (such as use in nuclear power
control, aerospace and aviation, traffic equipment, life-support-
related medical
equipment, fuel
control equipment and various kinds of safety equipment), safety should
be ensured by
using semiconductor devices that feature assured safety or by means of
users’ fail-safe preca
utions or other arrangement. Or consult Hitachi’s sales department
staff.
4. In no event shall Hitachi be liable for any damages that may result from an accident or
any other cause during operation of the user’s units according to this data sheets. Hitachi
assumes no responsibility for any intellectual property claims or any other problems that
may result from applications of information, products or circuits described in this data
sheets.
5. In no event shall Hitachi be liable for any failure in a semicond
uctor device or any
secondary damage resulting from use at a value exceeding the absolute maximum rating.
6. No license is granted by this data sheets under any patents or other rights of any third
party or Hitachi, Ltd.
7. This data sheets may not be repr
oduced or duplicated, in any form, in whole or in part,
without the expressed written permission of Hitachi, Ltd.
8. The products (technologies) described in this data sheets are not to be provided to any
party whose purpose in their application will hinde
r maintenance of international peace
and safety not are they to be applied to that purpose by their direct purchasers or any
third party. When exporting these products (technologies), the necessary procedures are
to be taken in accordance with related laws and regulations.
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