©2004 Fairchild Semiconductor Corporation 1N458A, Rev. A1
1N458A
Small Signal Diode
Absolute Maximum Ratings *
T
A
= 25°C unless otherwise noted
* These ratings are limiting values above which the serviceability of the diode may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 200 degrees C.
2) These are steady limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Charac t eris tics
Electrical Characteristics
T
A
=25°C unless otherwise noted
Symbol Parameter Value Units
V
RRM
Maximum Repetitive Reverse Voltage 150 V
I
F(AV)
Average Rectified Forward Current 500 mA
I
FSM
Non-repetitive Peak Forward Surge Current
Pulse Width = 1.0 second
Pulse Width = 1.0 microsecond 1.0
4.0 A
A
T
STG
Storage Temperature Range -65 to +200 °C
T
J
Operating Junction Temperature 175 °C
Symbol Parameter Value Units
P
D
Power Dissipation 500 mW
R
θJA
Thermal Resistance, Junction to Ambient 300 °C/W
Symbol Parameter Test Conditions Min. Max. Units
V
R
Breakdown Voltage I
R
= 100µA 150 V
V
F
Forward Voltage I
F
= 100mA 1.0 V
I
R
Reverse Leakage V
R
= 125V
V
R
= 125V, T
A
= 150°C25
5nA
µA
1N458A
DO-35
COLOR BAND DENOTES CATHODE
©2004 Fairchild Semiconductor Corporation
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Design This datasheet contains the design specifications for
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Rev. I13
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