MJE13002B
NPN Silicon
Plastic-Encapsulate
Transistor
Features
• Capable of 900mWatts of Power Dissipation.
• Collector-current 0.8A
• Collector-base Voltage 600V
• Operating and storage junction temperature range: -55OC to +150OC
OFF CHARACTERISTICS
V(BR)CEO Collector-Emitter Breakdown Voltage
(I
C=1.0mAdc, IB=0)
400 Vdc
V(BR)CBO Collector-Base Breakdown Voltage
(I
C=100uAdc, IE=0)
600 Vdc
V(BR)EBO Emitter-Base Breakdown Voltage
(I
E=100uAdc, IC=0)
6.0 Vdc
ICBO Collector Cutoff Current
(VCB=600Vdc, IE=0)
100 uAdc
IEBO Emitter Cutoff Current
(VEB=6.0Vdc, IC=0)
100 uAdc
ON CHARACTERISTICS
hFE(1) DC Current Gain
(I
C=10mAdc, VCE=10Vdc) 6
hFE(2) DC Current Gain
(I
C=200mAdc, VCE=10Vdc) 9.0 40
VCE(sat) Collector-Emitter Saturation Voltage
(I
C=200mAdc, I
B=40mAdc) 0.5 Vdc
VBE(sat) Base-Emitter Saturation Voltage
(I
C=200mAdc, I
B=40mAdc) 1.1 Vdc
SMALL-SIGNAL CHARACTERISTICS
fTTransistor Frequency
(I
C=100mAdc, VCE=10Vdc, f=1.0MHz) 5.0 MHz
tFFall Time 0.5 uS
tSStorage Time
VCC=100V,IC=1.0A,
IB1=IB2=0.2A 2.5 uS
omponents
20736 Marilla Street Chatsworth
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MCC
Revision: D 2013/01/01
TM
Micro Commercial Components
www.mccsemi.com
1 of 2
Electrical Characteristics @ 25OC Unless Otherwise Specified
Symbol Parameter Min Max Units
• Lead Free Finish/RoHS Compliant ("P" Suffix designates
RoHS Compliant. See ordering information)
• Epoxy meets UL 94 V-0 flammability rating
• Moisure Sensitivity Level 1
INCHES MM
DIM MIN MAX MIN MAX NOTE
A .175 .185 4.45 4.70
B .175 .185 4.45 4.70
C .500 --- 12.70 ---
D .016 .020 0.41 0.63
E .135 .145 3.43 3.68
.095.1052.422.67 Straight Lead
AE
B
C
D
G
ECB
ECB
BENT LEADSTRAIGHT LEAD
BULK PACK AMMO PACK
* For ammo packing detailed specification, click here to visit our website
of product packaging for details.
.173.2204.405.60 Bent Lead
G
TO-92
DIMENSIONS
Halogen free available upon request by adding suffix "-HF"
•