BD139 TO-126 NPN Transistors NPN Epitaxial Silicon Power Transistors TO126 Plastic Package Dimensions Minimum Maximum A 7. 2 8.38 B 10.16 11.43 C 2.29 3.04 D 0.64 0.88 E 2.040 2.285 F 0.39 0.63 G 4.07 5.08 L 15.00 16.63 M 0.89 1.65 N 3.31 4.44 P 2.54 3.30 S - 2.54 Dimensions : Millimetres 1. Emitter 2. Collector 3. Base http://www.farnell.com http://www.newark.com http://www.cpc.co.uk Page <1> 28/06/10 V1.1 BD139 TO-126 NPN Transistors Absolute Maximum Ratings Description Symbol BD139 Collector-emitter voltage VCEO 80 Collector-emitter voltage (RBE = 1k) VCER Collector-base voltage VCBO Emitter base voltage VEBO 5.0 IC 1.5 ICM 2.0 Base current IB 0.5 Power dissipation at Ta = 25C Derate above 25C PD 1.25 10 W mW/C Power dissipation at Tc = 25C Derate above 25C PD 12.5 100 W mW/C Power dissipation at Tc = 70C PD 8.0 W Operating and storage junction Temperature range Tj, Tstg -55 to +150 C Collector current Collector peak current Unit 100 V A Thermal Characteristics Junction to ambient in free air Rth (j-a) 100 C/W Junction to case Rth (j-c) 10 C/W Electrical characteristics (Tc = 25C unless specified otherwise) Description Symbol Test Condition Minimum Collector emitter sustaining voltage *VCEO (sus) IC = 30mA, IB = 0 BD139 80 Collector cut off current ICBO Maximum V VCB = 30V, IE = 0 0.1 VCB = 30V, IE = 0, Tc = 125C 10 Emitter cut off current IEBO VEB = 5V, IC = 0 DC current gain *hFE IC = 0.005A, VCE = 2V IC = 0.15A, VCE = 2V IC = 0.5A, VCE = 2V 25 40 25 Unit 250 A - *Pulse test: -Pulse width=300ms, duty cycle = 2%. http://www.farnell.com http://www.newark.com http://www.cpc.co.uk Page <2> 28/06/10 V1.1 BD139 TO-126 NPN Transistors Electrical Characteristics (Tc = 25C unless specified otherwise) Description Symbol Test Condition Minimum Maximum *hFE Group 40 63 100 160 100 160 250 400 - 0.5 - 1.0 Collector emitter saturation voltage *VCE (sat) IC = 0.15A, VCE = 2V -6 - 10 - 16 - 25 IC = 0.5A, IB = 0.05A Base emitter on voltage *VBE (on) *IC = 0.5A, VCE = 2V DC Current Gain Unit - V Part Number Table Description NPN Epitaxial Silicon Power Transistors Part Number BD139-10 Disclaimer This data sheet and its contents (the "Information") belong to the Premier Farnell Group (the "Group") or are licensed to it. No licence is granted for the use of it other than for information purposes in connection with the products to which it relates. No licence of any intellectual property rights is granted. The Information is subject to change without notice and replaces all data sheets previously supplied. The Information supplied is believed to be accurate but the Group assumes no responsibility for its accuracy or completeness, any error in or omission from it or for any use made of it. Users of this data sheet should check for themselves the Information and the suitability of the products for their purpose and not make any assumptions based on information included or omitted. Liability for loss or damage resulting from any reliance on the Information or use of it (including liability resulting from negligence or where the Group was aware of the possibility of such loss or damage arising) is excluded. This will not operate to limit or restrict the Group's liability for death or personal injury resulting from its negligence. SPC Multicomp is the registered trademark of the Group. (c) Premier Farnell plc 2010. http://www.farnell.com http://www.newark.com http://www.cpc.co.uk Page <3> 28/06/10 V1.1