2N5758 - Mospec Semiconductor

Motorola Bipolar Power Transistor Device Data

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  !!" !

. . . designed for use in high power audio amplifier applications and high voltage

switching regulator circuits.

•High Collector–Emitter Sustaining Voltage —

VCEO(sus) = 100 Vdc (Min)

•DC Current Gain @ IC = 3.0 Adc —

hFE = 25 (Min)

•Low Collector–Emitter Saturation Voltage —

VCE(sat) = 1.0 Vdc (Max) @ IC = 3.0 Adc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

MAXIMUM RATINGS (1)

ÎÎÎÎÎÎÎÎÎÎÎÎ

Rating

ÎÎÎÎÎ

Symbol

ÎÎÎÎÎÎ

2N5758

ÎÎÎ

Unit

ÎÎÎÎÎÎÎÎÎÎÎÎ

Collector–Emitter Voltage

ÎÎÎÎÎ

VCEO

ÎÎÎÎÎÎ

100

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎ

Collector–Base Voltage

ÎÎÎÎÎ

VCB

ÎÎÎÎÎÎ

100

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎ

Emitter–Base Voltage

ÎÎÎÎÎ

VEB

ÎÎÎÎÎÎ

7.0

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎ

Collector Current — Continuous

Peak

ÎÎÎÎÎ

ÎÎÎÎÎÎ

6.0

ÎÎÎ

Adc

ÎÎÎÎÎÎÎÎÎÎÎÎ

Base Current

ÎÎÎÎÎ

ÎÎÎÎÎÎ

4.0

ÎÎÎ

Adc

ÎÎÎÎÎÎÎÎÎÎÎÎ

Total Device Dissipation @ TC = 25

Derate above 25

ÎÎÎÎÎ

ÎÎÎÎÎÎ

150

0.857

ÎÎÎ

Watts

ÎÎÎÎÎÎÎÎÎÎÎÎ

Operating and Storage Junction,

Temperature Range

ÎÎÎÎÎ

TJ, Tstg

ÎÎÎÎÎÎ

–65 to +200

ÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

THERMAL CHARACTERISTICS (1)

ÎÎÎÎÎÎÎÎÎÎÎÎ

Characteristic

ÎÎÎÎÎ

Symbol

ÎÎÎÎÎÎ

Max

ÎÎÎ

Unit

ÎÎÎÎÎÎÎÎÎÎÎÎ

Thermal Resistance, Junction to Case

ÎÎÎÎÎ

θJC

ÎÎÎÎÎÎ

1.17

ÎÎÎ

C/W

(1) Indicates JEDEC Registered Data.

PD, POWER DISSIPATION (WATTS)

160

00 25 50 75 100 125 150 175 200

Figure 1. Power Derating

TC, CASE TEMPERATURE (

120

Safe area limits are indicated by Figure 5. Both limits are applicable and must be observed.

140

100



SEMICONDUCTOR TECHNICAL DATA Order this document

by 2N5758/D



 

 Motorola, Inc. 1995



6 AMPERE

POWER TRANSISTOR

NPN SILICON

100–140 VOLTS

150 WATTS

CASE 1–07

TO–204AA

(TO–3)

REV 7

2N5758

2Motorola Bipolar Power Transistor Device Data

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

*ELECTRICAL CHARACTERISTICS (TC = 25

C unless otherwise noted)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Characteristic

ÎÎÎÎÎ

Symbol

ÎÎÎÎÎÎ

Min

ÎÎÎÎ

Max

ÎÎÎÎ

Unit

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

OFF CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector–Emitter Sustaining Voltage (1)

(IC = 200 mAdc, IB = 0)

ÎÎÎÎÎ

VCEO(sus)

ÎÎÎÎÎÎ

100

ÎÎÎÎ

—

ÎÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector Cutoff Current

(VCE = 50 Vdc, IB = 0)

ÎÎÎÎÎ

ICEO

ÎÎÎÎÎÎ

—

ÎÎÎÎ

1.0

ÎÎÎÎ

mAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector Cutoff Current

(VCE = Rated VCB, VBE(off) = 1.5 Vdc)

(VCE = Rated VCB, VBE(off) = 1.5 Vdc, TC = 150

ÎÎÎÎÎ

ICEX

ÎÎÎÎÎÎ

—

ÎÎÎÎ

1.0

5.0

ÎÎÎÎ

mAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector Cutoff Current

(VCB = Rated VCB, IE = 0)

ÎÎÎÎÎ

ICBO

ÎÎÎÎÎÎ

—

ÎÎÎÎ

1.0

ÎÎÎÎ

mAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Emitter–Cutoff Current

(VBE = 7.0 Vdc, IC = 0)

ÎÎÎÎÎ

IEBO

ÎÎÎÎÎÎ

—

ÎÎÎÎ

1.0

ÎÎÎÎ

mAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ON CHARACTERISTICS (1)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

DC Current Gain

(IC = 3.0 Adc, VCE = 2.0 Vdc)

(IC = 6.0 Adc, VCE = 2.0 Vdc)

ÎÎÎÎÎ

hFE

ÎÎÎÎÎÎ

5.0

ÎÎÎÎ

100

—

ÎÎÎÎ

—

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector–Emitter Saturation Voltage

(IC = 3.0 Adc, IB = 0.3 Adc)

(IC = 6.0 Adc, IB = 1.2 Adc)

ÎÎÎÎÎ

VCE(sat)

ÎÎÎÎÎÎ

—

ÎÎÎÎ

1.0

2.0

ÎÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Base–Emitter On Voltage

(IC = 3.0 Adc, VCE = 2.0 Vdc)

ÎÎÎÎÎ

VBE(on)

ÎÎÎÎÎÎ

—

ÎÎÎÎ

1.5

ÎÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

DYNAMIC CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Current–Gain — Bandwidth Product

(IC = 0.5 Adc, VCE = 20 Vdc, ftest = 0.5 MHz)

ÎÎÎÎÎ

ÎÎÎÎÎÎ

1.0

ÎÎÎÎ

—

ÎÎÎÎ

MHz

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Output Capacitance

(VCB = 10 Vdc, IE = 0, f = 0.1 MHz)

ÎÎÎÎÎ

Cob

ÎÎÎÎÎÎ

—

ÎÎÎÎ

300

ÎÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Small–Signal Current Gain

(IC = 2.0 Adc, VCE = 10 Vdc, f = 1.0 kHz)

ÎÎÎÎÎ

hfe

ÎÎÎÎÎÎ

ÎÎÎÎ

—

ÎÎÎÎ

—

*Indicates JEDEC Registered Data

(1) Pulse Test: Pulse Width

300 µs, Duty Cycle

2.0%

(2) fT = |hfe| • ftest.

Figure 2. Switching Time Test Circuit

+10 V

–10 V

–4.0 V

SCOPE

VCC

+30 V

tr, tf

≤

10 ns

DUTY CYCLE = 1.0%

D1 MUST BE FAST RECOVERY TYPE, eg:

1N5825 USED ABOVE IB

≈

100 mA

MSD6100 USED BELOW IB

≈

100 mA

RB and RC VARIED TO OBTAIN DESIRED CURRENT LEVELS

*For PNP test circuit, reverse all polarities and D1.

2N5758

Motorola Bipolar Power Transistor Device Data

Figure 3. Turn–On Time

t, TIME (ms)

1.0

0.01

0.7

0.5

0.3

0.2

0.1

0.07

0.05

0.03

0.02

0.02 0.05

r(t), EFFECTIVE TRANSIENT

THERMAL RESISTANCE (NORMALIZED)

0.1 0.2 0.5 1.0 3.0 5.0 10 20 50 100 200 500 1000

JC = 1.17

C/W MAX

D CURVES APPLY FOR POWER

PULSE TRAIN SHOWN

READ TIME AT t1

TJ(pk) – TC = P(pk)

JC(t)

P(pk)

t1t2

DUTY CYCLE, D = t1/t2

D = 0.5

0.2

0.05

SINGLE PULSE

0.1

Figure 4. Thermal Response

0.02

1.0

0.06 IC, COLLECTOR CURRENT (AMP)

0.5

0.2

0.1

0.05 0.1 0.2 0.4 0.6 2.0 6.0

VCC = 30 V

IC/IB = 10

VBE(off) = 5.0 V

TJ = 25

0.07

t, TIME ( s)

1.0

0.3

0.7

4.0

0.03 0.3 2.0 30 300

0.01

10 VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)

5.0

3.0

2.0

1.0

0.1 20 30 50 100 300

BONDING WIRE

LIMITED

THERMALLY LIMITED

@ TC = 25

SECOND BREAKDOWN LIMITED

200

0.5

IC, COLLECTOR CURRENT (AMP)

CURVES APPLY BELOW RATED VCEO

0.3

0.2

TJ = 200

Figure 5. Active–Region Safe Operating Area

0.05 ms

0.1 ms

1.0 ms

0.5 ms

5.0 ms

2N5760

2N5758

There are two limitations on the power handling ability of a

transistor: average junction temperature and second break-

down. Safe operating area curves indicate IC – VCE limits of

the transistor that must be observed for reliable operation;

i.e., the transistor must not be subjected to greater dissipa-

tion than the curves indicate.

The data of Figure 5 is based on TJ(pk) = 200; TC is

variable depending on conditions. Second breakdown pulse

limits are valid for duty cycles to 10% provided TJ(pk)

200

C. TJ(pk) may be calculated from the data in Figure 4.

At high case temperatures, thermal limitations will reduce the

power that can be handled to values less than the limitations

imposed by second breakdown.

2N5758

4Motorola Bipolar Power Transistor Device Data

6.0

0.06

Figure 6. Turn–Off Time

IC, COLLECTOR CURRENT (AMP)

3.0

2.0

0.6

0.4

0.3 0.1 0.2 0.4 0.6 2.0 6.0

VCC = 30 V

IB1 = IB2

IC/IB = 10

TJ = 25

t, TIME ( s)

1.0

4.0

400

0.1

Figure 7. Capacitance

VR, REVERSE VOLTAGE (VOLTS)

40 2.0 5.0 10 20 100500.2 0.5 1.0

C, CAPACITANCE (pF)

300

100

TJ = 25

Cib

200

Cob

500

0.06

Figure 8. DC Current Gain

IC, COLLECTOR CURRENT (AMP)

5.0 0.1 0.2 0.4 1.0 2.0 4.0 6.0

100

hFE, DC CURRENT GAIN

TJ = 150

–55

200 VCE = 2.0 V

0.6

2N5758

Motorola Bipolar Power Transistor Device Data

PACKAGE DIMENSIONS

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. ALL RULES AND NOTES ASSOCIATED WITH

REFERENCED TO–204AA OUTLINE SHALL APPLY.

STYLE 1:

PIN 1. BASE

2. EMITTER

CASE: COLLECTOR

DIM MIN MAX MIN MAX

MILLIMETERSINCHES

A1.550 REF 39.37 REF

B––– 1.050 ––– 26.67

C0.250 0.335 6.35 8.51

D0.038 0.043 0.97 1.09

E0.055 0.070 1.40 1.77

G0.430 BSC 10.92 BSC

H0.215 BSC 5.46 BSC

K0.440 0.480 11.18 12.19

L0.665 BSC 16.89 BSC

N––– 0.830 ––– 21.08

Q0.151 0.165 3.84 4.19

U1.187 BSC 30.15 BSC

V0.131 0.188 3.33 4.77

–T–

SEATING

PLANE

2 PLD

0.13 (0.005) Y M

0.13 (0.005) T

–Q–

–Y–

CASE 1–07

TO–204AA (TO–3)

ISSUE Z

2N5758

6Motorola Bipolar Power Transistor Device Data

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2N5758/D

*2N5758/D*

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