PMPB20UN,115 - NXP Semiconductors

PMPB20UN

20 V, single N-channel Trench MOSFET

12 September 2012 Product data sheet

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1. Product profile

1.1 General description

N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power

DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using

Trench MOSFET technology.

1.2 Features and benefits

•Trench MOSFET technology

•Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm

•Exposed drain pad for excellent thermal conduction

•Tin-plated 100 % solderable side pads for optical solder inspection

1.3 Applications

•Charging switch for portable devices

•DC-to-DC converters

•Power management in battery-driven portable devices

•Hard disk and computing power management

1.4 Quick reference data

Table 1. Quick reference data

Symbol Parameter Conditions Min Typ Max Unit

VDS drain-source voltage - - 20 V

VGS gate-source voltage

Tj = 25 °C

-8 - 8 V

IDdrain current VGS = 4.5 V; Tamb = 25 °C; t ≤ 5 s [1] - - 9.4 A

Static characteristics

RDSon drain-source on-state

resistance

VGS = 4.5 V; ID = 6.6 A; Tj = 25 °C - 19 25 mΩ

[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for

drain 6 cm2.

NXP Semiconductors PMPB20UN

20 V, single N-channel Trench MOSFET

Product data sheet 12 September 2012 2 / 13

2. Pinning information

Table 2. Pinning information

Pin Symbol Description Simplified outline Graphic symbol

1 D drain

2 D drain

3 G gate

4 S source

5 D drain

6 D drain

7 D drain

8 S source

Transparent top view

DFN2020MD-6 (SOT1220)

017aaa253

3. Ordering information

Table 3. Ordering information

PackageType number

Name Description Version

PMPB20UN DFN2020MD-6 plastic thermal enhanced ultra thin small outline package; no

leads; 6 terminals

SOT1220

4. Marking

Table 4. Marking codes

Type number Marking code

PMPB20UN 1G

5. Limiting values

Table 5. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

VDS drain-source voltage - 20 V

VGS gate-source voltage

Tj = 25 °C

-8 8 V

VGS = 4.5 V; Tamb = 25 °C; t ≤ 5 s [1] - 9.4 A

VGS = 4.5 V; Tamb = 25 °C [1] - 6.6 A

IDdrain current

VGS = 4.5 V; Tamb = 100 °C [1] - 4.1 A

IDM peak drain current Tamb = 25 °C; single pulse; tp ≤ 10 µs - 27 A

Ptot total power dissipation Tamb = 25 °C [1] - 1.7 W

NXP Semiconductors PMPB20UN

20 V, single N-channel Trench MOSFET

Product data sheet 12 September 2012 3 / 13

Symbol Parameter Conditions Min Max Unit

Tamb = 25 °C; t ≤ 5 s [1] - 3.5 W

Tsp = 25 °C - 12.5 W

Tjjunction temperature -55 150 °C

Tamb ambient temperature -55 150 °C

Tstg storage temperature -65 150 °C

Source-drain diode

ISsource current Tamb = 25 °C [1] - 1.8 A

[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for

drain 6 cm2.

Tj(°C)

- 75 17512525 75- 25

017aaa123

120

Pder

(%)

Fig. 1. Normalized total power dissipation as a

function of junction temperature

Tj(°C)

- 75 17512525 75- 25

017aaa124

120

Ider

(%)

Fig. 2. Normalized continuous drain current as a

function of junction temperature

NXP Semiconductors PMPB20UN

20 V, single N-channel Trench MOSFET

Product data sheet 12 September 2012 4 / 13

017aaa816

10-1

102

(A)

10-2

VDS (V)

10-2 102

1010-1 1

tp = 100 µs

tp = 1 ms

tp = 10 ms

tp = 100 ms

DC; Tsp = 25 °C

DC; Tamb = 25 °C;

drain mounting pad 6 cm2

Limit RDSon = VDS/ID

IDM = single pulse

Fig. 3. Safe operating area; junction to ambient; continuous and peak drain currents as a function of drain-

source voltage

6. Thermal characteristics

Table 6. Thermal characteristics

Symbol Parameter Conditions Min Typ Max Unit

[1] - 235 270 K/Win free air

[2] - 67 74 K/W

Rth(j-a) thermal resistance

from junction to

ambient

in free air; t ≤ 5 s [2] - 33 36 K/W

Rth(j-sp) thermal resistance

from junction to solder

point

- 5 10 K/W

[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.

[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm2.

NXP Semiconductors PMPB20UN

20 V, single N-channel Trench MOSFET

Product data sheet 12 September 2012 5 / 13

017aaa542

tp (s)

10-3 102103

10110-2 10-1

102

103

Zth(j-a)

(K/W)

duty cycle = 1

0.75

0.5

0.33 0.25

0.2

0.1

0.05

0.02

0.01 0

FR4 PCB, standard footprint

Fig. 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values

017aaa543

tp (s)

10-3 102103

10110-2 10-1

102

103

Zth(j-a)

(K/W)

duty cycle = 1

0.75

0.5

0.33 0.25

0.2 0.1

0.05

0.02

0.01

FR4 PCB, mounting pad for drain 6 cm2

Fig. 5. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values

7. Characteristics

Table 7. Characteristics

Symbol Parameter Conditions Min Typ Max Unit

Static characteristics

V(BR)DSS drain-source

breakdown voltage

ID = 250 µA; VGS = 0 V; Tj = 25 °C 20 - - V

VGSth gate-source threshold

voltage

ID = 250 µA; VDS = VGS; Tj = 25 °C 0.4 0.7 1 V

IDSS drain leakage current VDS = 20 V; VGS = 0 V; Tj = 25 °C - - 1 µA

IGSS gate leakage current VGS = -8 V; VDS = 0 V; Tj = 25 °C - - -100 nA

NXP Semiconductors PMPB20UN

20 V, single N-channel Trench MOSFET

Product data sheet 12 September 2012 6 / 13

Symbol Parameter Conditions Min Typ Max Unit

VGS = 8 V; VDS = 0 V; Tj = 25 °C - - 100 nA

VGS = 4.5 V; ID = 6.6 A; Tj = 25 °C - 19 25 mΩ

VGS = 4.5 V; ID = 6.6 A; Tj = 150 °C - 30 39 mΩ

VGS = 2.5 V; ID = 5.6 A; Tj = 25 °C - 25 34 mΩ

RDSon drain-source on-state

resistance

VGS = 1.8 V; ID = 1.7 A; Tj = 25 °C - 36 57 mΩ

gfs forward

transconductance

VDS = 10 V; ID = 6.6 A; Tj = 25 °C - 25 - S

RGgate resistance f = 1 MHz - 1.2 - Ω

Dynamic characteristics

QG(tot) total gate charge - 4.7 7.1 nC

QGS gate-source charge - 0.8 - nC

QGD gate-drain charge

VDS = 10 V; ID = 6.6 A; VGS = 4.5 V;

Tj = 25 °C

- 1.2 - nC

Ciss input capacitance - 460 - pF

Coss output capacitance - 135 - pF

Crss reverse transfer

capacitance

VDS = 10 V; f = 1 MHz; VGS = 0 V;

Tj = 25 °C

- 75 - pF

td(on) turn-on delay time - 7 - ns

trrise time - 19 - ns

td(off) turn-off delay time - 17 - ns

tffall time

VDS = 10 V; ID = 6.6 A; VGS = 4.5 V;

RG(ext) = 6 Ω; Tj = 25 °C

- 26 - ns

Source-drain diode

VSD source-drain voltage IS = 1.8 A; VGS = 0 V; Tj = 25 °C - 0.7 1.2 V

VDS (V)

0 431 2

017aaa817

(A)

4.5 V 2.5 V

1.6 V

1.4 V

1.2 V

VGS = 1.8 V

2 V

1 V

Tj = 25 °C

Fig. 6. Output characteristics: drain current as a

function of drain-source voltage; typical values

017aaa818

VGS (V)

0 1.51.00.5

10-5

10-4

10-3

10-2

(A)

10-6

min typ max

Tj = 25 °C; VDS = 5 V

Fig. 7. Sub-threshold drain current as a function of

gate-source voltage

NXP Semiconductors PMPB20UN

20 V, single N-channel Trench MOSFET

Product data sheet 12 September 2012 7 / 13

ID (A)

0 252010 155

017aaa819

0.04

0.06

0.02

0.08

0.10

RDSon

(Ω)

1.4 V 1.6 V 1.8 V 2 V 2.2 V

2.5 V

VGS = 4.5 V

Tj = 25 °C

Fig. 8. Drain-source on-state resistance as a function

of drain current; typical values

VGS (V)

0 542 31

017aaa820

0.04

0.06

0.02

0.08

0.10

RDSon

(Ω)

Tj= 25 °C

Tj= 150 °C

ID = 7 A

Fig. 9. Drain-source on-state resistance as a function

of gate-source voltage; typical values

017aaa821

VGS (V)

0 321

(A)

Tj= 150 °C Tj= 25 °C

VDS > ID × RDSon

Fig. 10. Transfer characteristics: drain current as a

function of gate-source voltage; typical values

Tj (°C)

-60 1801200 60

017aaa822

1.0

1.5

2.0

Fig. 11. Normalized drain-source on-state resistance

as a function of junction temperature; typical

values

NXP Semiconductors PMPB20UN

20 V, single N-channel Trench MOSFET

Product data sheet 12 September 2012 8 / 13

Tj (°C)

-60 1801200 60

017aaa823

0.5

1.0

1.5

VGS(th)

(V)

max

typ

min

ID = -0.25 mA; VDS = VGS

Fig. 12. Gate-source threshold voltage as a function of

junction temperature

017aaa824

VDS (V)

10-1 102

101

102

103

(pF)

Ciss

Coss

Crss

f = 1 MHz; VGS = 0 V

Fig. 13. Input, output and reverse transfer capacitances

as a function of drain-source voltage; typical

values

QG (nC)

0 542 31

017aaa825

1.5

3.0

4.5

VGS

(V)

ID = 6 A; VDS = 10 V; Tamb = 25 °C

Fig. 14. Gate-source voltage as a function of gate

charge; typical values

017aaa137

VGS

VGS(th)

QGS1 QGS2

QGD

VDS

QG(tot)

QGS

VGS(pl)

Fig. 15. Gate charge waveform definitions

NXP Semiconductors PMPB20UN

20 V, single N-channel Trench MOSFET

Product data sheet 12 September 2012 9 / 13

VDS (V)

0 0.80.60.2 0.4

017aaa826

0.6

1.2

1.8

(A)

Tj= 150 °C Tj= 25 °C

VGS = 0 V

Fig. 16. Source current as a function of source-drain voltage; typical values

8. Test information

006aaa812

duty cycle δ =

Fig. 17. Duty cycle definition

NXP Semiconductors PMPB20UN

20 V, single N-channel Trench MOSFET

Product data sheet 12 September 2012 10 / 13

9. Package outline

References

Outline

version

European

projection Issue date

IEC JEDEC JEITA

SOT1220

sot1220_po

12-04-23

12-04-30

Unit

min

nom

max

1.9 1.0

0.65

Dimensions (mm are the original dimensions)

Note

1. Dimension A is including plating thickness.

DFN2020MD-6: plastic thermal enhanced ultra thin small outline package; no leads;

6 terminals; body 2 x 2 x 0.65 mm SOT1220

A1bp

0.25

D D1E1E2e

0.27 0.64

J1Lpv

0.05

0.1

0.511.1 0.2

0.1

0.611.3 0.30.65 0.04 2.1 1.20.35

scale

0 2 mm

0.2

0.3

D2E

1.9

2.1

(8×)

detail X

pin 1

index area

solderable lead

end protrusion

max. 0.02 mm (6×)

pin 1

index area

B A

bp (6×)

A Bv

Fig. 18. Package outline DFN2020MD-6 (SOT1220)

NXP Semiconductors PMPB20UN

20 V, single N-channel Trench MOSFET

Product data sheet 12 September 2012 11 / 13

10. Soldering

1.35

1.25

1.05

0.9

1.1

1.2

2.5

0.935 0.935

SOT1220Footprint information for reflow soldering of DFN2020MD-6 package

sot1220_fr

occupied area

solder land

solder resist

solder land plus solder paste

solder paste deposit

Dimensions in mm

0.33 (6×) 0.76

0.66

0.56

0.25 0.35 0.45

0.25 (6×)

0.35 (6×)

0.65

0.45 (6×)

0.43 (6×)

0.53 (6×)

2.06

0.775

0.285

Fig. 19. Reflow soldering footprint for DFN2020MD-6 (SOT1220)

NXP Semiconductors PMPB20UN

20 V, single N-channel Trench MOSFET

Product data sheet 12 September 2012 12 / 13

11. Revision history

Table 8. Revision history

Data sheet ID Release date Data sheet status Change notice Supersedes

PMPB20UN v.1 20120912 Product data sheet - -

NXP Semiconductors PMPB20UN

20 V, single N-channel Trench MOSFET

Product data sheet 12 September 2012 13 / 13

13. Contents

1 Product profile ....................................................... 1

1.1 General description .............................................. 1

1.2 Features and benefits ...........................................1

1.3 Applications .......................................................... 1

1.4 Quick reference data ............................................ 1

2 Pinning information ............................................... 2

3 Ordering information ............................................. 2

4 Marking ................................................................... 2

5 Limiting values .......................................................2

6 Thermal characteristics .........................................4

7 Characteristics .......................................................5

8 Test information ..................................................... 9

9 Package outline ................................................... 10

10 Soldering .............................................................. 11

11 Revision history ...................................................12

12 Legal information ............................................

12.1 Data sheet status ...........................................

12.2 Definitions ......................................................

12.3 Disclaimers ....................................................

12.4 Trademarks ...................................................

For more information, please visit: http://www.nxp.com

For sales office addresses, please send an email to: salesaddresses@nxp.com

Date of release: 12 September 2012

Mouser Electronics

Authorized Distributor

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PMPB20UN,115